7/29/2019 2N3439_40

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2N34392N3440

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is

believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in

its use. Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 3066Issue: 1

7V1A

0.5A

5W

1W

65 to 200C

200C

HIGH VOLTAGENPN TRANSISTORS

FEATURES

DUAL SILICON PLANAR EPITAXIAL NPNTRANSISTOR

HIGH VOLTAGE

APPLICATIONS:

These devices are particularly suited asdrivers in high-voltage low current inverters,switching and series regulators.

VCBO Collector Base Voltage (IE = 0)

VCEO Collector Emitter Voltage (IB = 0)

VEBO Emitter Base Voltage (IC = 0)IC Collector Current

IB Base Current

Ptot Total Power Dissipation at Tcase 25C

Tamb 50C

Tstg Storage Temperature

Tj Junction Temperature

450V

350V

300V

250V

MECHANICAL DATADimensions in mm (inches)

ABSOLUTE MAXIMUM RATINGS(Tcase = 25C unless otherwise stated) 2N3439 2N3440

0.89(0.035)

max.12.70

(0.500)min. 0.41 (0.016)

0.53 (0.021)dia.

5.08 (0.200)typ.

0.71 (0.028)0.86 (0.034)

2.54(0.100)

45

6.10 (0.240)6.60 (0.260)

8.51 (0.34)9.40 (0.37)

7.75 (0.305)8.51 (0.335)

1

2

3

0.74 (0.029)1.14 (0.045)

Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector

TO39 PACKAGE (TO-205AD)

7/29/2019 2N3439_40

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2N34392N3440

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is

believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in

its use. Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 3066Issue: 1

Parameter Test Conditions Min. Typ. Max. UnitIC = 50mA 2N3439

IC = 50mA 2N3440

VCE = 300V 2N3439

VCE = 200V 2N3440

VCE = 450V 2N3439

VCE = 300V 2N3440VCB = 350V 2N3439

VCB = 250V 2N3440

VEB = 6V

IC = 50mA IB = 4mA

IC = 50mA IB = 4mA

IC = 20mA

VCE = 10V

IC = 2mA

VCE = 10V

VCEO(sus)* CollectorEmitter Sustaining Voltage

(IB = 0)

ICEO Collector Cut-off Current

(IB = 0)

ICEX Collector Cut-off Current

(VBE = -1.5V)ICBO CollectorBase Cut-off Current

(IE = 0)

IEBO Emitter Cut-off Current (IC = 0)

VCE(sat)* CollectorEmitter Saturation Voltage

VBE(sat)* BaseEmitter Saturation Voltage

hFE* DC Current Gain

Parameter Test Conditions Min. Typ. Max. Unit

ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)

fT Transition Frequency

Cob Output Capacitance

hfe Small Signal Current Gain

IC = 10mA VCE = 10V f = 5MHz

VCB = 10V f = 1MHz

IC = 5mA VCE = 10V f = 1kHz

15

10

25

MHz

pF

* Pulse test tp = 300s , 2%

DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated)

350

250

20

50

500

50020

20

20

0.5

1.3

40 160

30

V

A

A

A

A

V

V

2N3439 only

THERMAL DATA

Parameter Min. Typ. Max. Unit

RJA Thermal Resistance Junction to Ambient 175 C/W

RJC Thermal Resistance Junction to Case 35 C/W