High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology Vibhor Jain, Evan Lobisser, Ashish Baraskar, Brian.
1 1.0-THz f max InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance Vibhor Jain, Johann C. Rode, Han-Wei.
1 InGaAs/InP DHBTs in a planarized, etch-back technology for base contacts Vibhor Jain, Evan Lobisser, Ashish Baraskar, Brian J Thibeault, Mark Rodwell.
