Abstract This paper is focused on the study of different functionalised nanostructurated silicon – porous silicon – layers with the aim to find the suitable.
Introduction spot- and projection weld inspection with the Mini Scanner A high level inspection method with a handy instrument AMS TERDAM TECH NOLOGY NDT.
ADONIS-ALIF_en_96dpi(20140128)
ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY (EIS): A TOOL FOR THE CHARACTERIZATION OF SPUTTERED NIOBIUM FILMS M. Musiani Istituto per l’Energetica e le Interfasi,
Formation of pn junction in deep silicon pores September 2002 By Xavier Badel, Jan Linnros, Martin Janson, John Österman Department of Microelectronics.
Formation of pn junction in deep silicon pores
