DRC 2009 1 0.37 mS/ m In 0.53 Ga 0.47 As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain Uttam Singisetti*, Mark A. Wistey, Greg.
Process Technologies For Sub-100-nm InP HBTs & InGaAs MOSFETs
1 In 0.53 Ga 0.47 As MOSFETs with 5 nm channel and self-aligned source/drain by MBE regrowth Uttam Singisetti PhD Defense Aug 21, 2009 * [email protected].
