1 EE40 Summer 2010 Hug EE40 Lecture 16 Josh Hug 8/02\/2010.
Single-electron Devices Speaker: Qiaoyan Yu [email protected] ECE423 12-16-2006.
Transport in nanowire MOSFETs: influence of the band-structure M. Bescond IMEP – CNRS – INPG (MINATEC), Grenoble, France Collaborations: N. Cavassilas,
UNIT I Power Supplies Biasing BJT and MOSFET Outline Rectifier BJT Biasing FET Biasing.
C H A P T E R 5 MOS Field-Effect Transistors (MOSFETs)
3 12.2 Ohm's Law: V = I R in most cases V = V = V 2 – V 1 voltage drop (volts)resistance (Ohms) current (amps) Resistivity, and Conductivity, : --geometry-independent.
High Frequency MOSFET Model. Models for Computer Simulation Simple dc Model Small Signal Model Frequency-Dependent Small Signal Model Better Analytical.