Generation of vacancy-related defects during focused swift-ion beam implantation of silicon I.Capan 1, M.Jakšić 1, Ž. Pastuović 1,2, Rainer Siegele 2,
Statistics: 34 participants from 16 different institutions 8 sessions, 24 talks Poster session
Generation of vacancy-related defects during focused swift-ion beam implantation of silicon
