IC Processing. Initial Steps: Forming an active region Si 3 N 4 is etched away using an F-plasma: Si3dN4 + 12F → 3SiF 4 + 2N 2 Or removed in hot.
Snowmass, August, 2005P. Colas - InGrid1 M. Chefdeville a, P. Colas b, Y. Giomataris b, H. van der Graaf a, E.H.M.Heijne c, S.van der Putten a, C. Salm.
Issai Shlimak
