Department of Physics VERTEX 2002 – Hawaii, 3-7 Nov. 2002 Outline: Introduction ISE simulation of non-irradiated and irradiated devices Non-homogeneous.
Techniques for determination of deep level trap parameters in irradiated silicon detectors AUTHOR: Irena Dolenc ADVISOR: prof. dr. Vladimir Cindro.
Qingyu Wei, MPI für Physik, HLL
While lattice-matched Ga 0.51 In 0.49 P on GaAs has the ideal bandgap for the top converter in triple- junction GaAs-based solar cells, more complex designs.
" On trying daring ideas with Herb". P.M.Petroff Professor Emeritus Materials Department, University of California, Santa Barbara.
T. H. Gfroerer and D. G. Hampton Davidson College, Davidson, NC 28035 M. W. Wanlass
" On trying daring ideas with Herb". P.M.Petroff Professor Emeritus Materials Department , University of California , Santa Barbara
1/23/021. 2 Proton Radiation Damage in High- Resistivity n-Type Silicon CCDs C. Bebek, D. Groom, S. Holland, A. Karcher, W. Kolbe, J. Lee, M. Levi, N.
Hole Transportation in Photocells Based on Hydrogenated Amorphous Silicon
