Chapter 2 Modern CMOS technology 1.Introduction. 2.CMOS process flow. 1 NE 343: Microfabrication and thin film technology Instructor: Bo Cui, ECE, University.
1.Introduction and application. 2.Dopant solid solubility and sheet resistance. 3.Microscopic view point: diffusion equations. 4.Physical basis for diffusion.
Chapter 9 Thin film deposition 1.Introduction to thin film deposition. 2.Introduction to chemical vapor deposition (CVD). 3.Atmospheric Pressure Chemical.
1.Introduction and application. 2.Ion implantation tools. 3.Dopant distribution. 4.Mask thickness and lateral distribution. 5.Effect of channeling. 6.Damage.
1.SiO 2 properties and applications. 2.Thermal oxidation basics. 3.Manufacturing methods and equipment. 4.Measurement methods. 5.Deal-grove model (linear.
1.Introduction to etching. 2.Wet chemical etching: isotropic. 3.Anisotropic etching of crystalline Si. 4.Dry etching overview. 5.Plasma etching mechanism.
1.Introduction and application. 2.Light source and photomask, alignment. 3.Photolithography systems. 4.Resolution, depth of focus, modulation transfer.
Chapter 1 Introduction and Historical Perspective 1.Introduction. 2.Growth of IC – Moore’s law. 3.Some history in IC industry. 4.Semiconductors. 5.Semiconductor.
1.SiO 2 properties and applications. 2.Thermal oxidation basics. 3.Manufacturing methods and equipment. 4.Measurement methods (mechanical, optical, electrical).
Chapter 2 Modern CMOS technology 1.Introduction. 2.CMOS process flow (continued). 1 NE 343: Microfabrication and thin film technology Instructor: Bo Cui,
1.Silicon crystal structure and defects. 2.Czochralski single crystal growth. 3.Growth rate and dopant incorporation for CZ method. 4.Float zone single.
