50-200 GHz InP HBT Integrated Circuits for Optical Fiber and mm-Wave Communications Mark Rodwell University of California, Santa Barbara [email protected].
Y. Wei, M. Urteaga, Z. Griffith, D. Scott, S. Xie, V. Paidi, N. Parthasarathy, M. Rodwell. Department of Electrical and Computer Engineering, University.
1 Bipolar Junction Transistors (BJTs). Copyright 2004 by Oxford University Press, Inc. Microelectronic Circuits - Fifth Edition Sedra/Smith2 Bipolar.
Electronic Devices and Circuits
Y. Wei, M. Urteaga, Z. Griffith, D. Scott, S. Xie, V. Paidi, N. Parthasarathy, M. Rodwell.
Single-stage G-band HBT Amplifier with 6.3 dB Gain at 175 GHz M. Urteaga, D. Scott, T. Mathew, S. Krishnan, Y. Wei, M. Rodwell. Department of Electrical.
Multi-stage G-band (140-220 GHz) InP HBT Amplifiers M. Urteaga, D. Scott, S. Krishnan, Y. Wei, M. Dahlström, Z. Griffith, N. Parthasarathy, and M. Rodwell.
185 GHz Monolithic Amplifier in InGaAs/InAlAs Transferred-Substrate HBT Technology
Single-stage G-band HBT Amplifier with 6.3 dB Gain at 175 GHz
EE 434 Lecture 22 Bipolar Device Models. Quiz 14 The collector current of a BJT was measured to be 20mA and the base current measured to be 0.1mA. What.
