100+ GHz Transistor Electronics: Present and Projected Capabilities [email protected] 805-893-3244, 805-893-5705 fax 2010 IEEE International Topical.
III-V FET Channel Designs for High Current Densities and Thin Inversion Layers [email protected] 805-893-3244, 805-893-5705 fax Mark Rodwell University.
Process Technologies For Sub-100-nm InP HBTs & InGaAs MOSFETs
Lower Limits To Specific Contact Resistivity
100+ GHz Transistor Electronics: Present and Projected Capabilities
