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Electrical Characterization and Reliability Group Evaluation of Charge Trapping Measurements and Their Application to High- Gate Stack Evaluation IEEE.
Basic MOS Device Physics Lecture 16 MSE 515. Topics MOS Structure MOS IV Characteristics CCD.
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Baltic Pilotage Authorities Commission 2011 Conference Hotel Sinatur Frederikstal Copenhagen 2 nd & 3 rd February 2011.
Grab Bag! (Palatography, Fricatives + Perception, part 2) April 10, 2012.
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