Bandgap Engineering of the Amorphous Wide Band-Gap Semiconductor (SiC) 1-x (AlN) x Doped with Rare Earths and its Optical Emission Properties Roland Weingärtner.
Seminar at Columbia 09-17-08
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Christian Thomsen Vibrational properties of graphene and graphene nanoribbons Christian Thomsen Institut für Festkörperphysik TU Berlin.
Atomic resolution electron microscopy Dirk Van Dyck ( Antwerp, Belgium ) Nato summer school Erice 10 june 2011.
Various SoC-Related Applications, Business Models, Global Industries & CareerLife Planning.
Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado.
SiGe Semiconductor Devices for Cryogenic Power Electronics
Correlated Electron Systems: Challenges and Future
Fig. 1 The TEM image of the 5% nanoalloy. TEM work in collaboration
