University of Virginia
Center for Nanoscopic Materials Design
University of Virginia MRSECNanoscale Control of GeSi/Si Quantum Dot Nucleation by In-Situ FIB Surface Modification
A. Portavoce, M. Kammler, R. Hull, UVa; F. Ross, M. Reuter, R. Tromp, IBM
QCA Bistable Logic QCA Adder Circuit Ex-Situ AFM ImageIn-Situ TEM Images: Left : FIB implanted Right: Ge QD Nucleation
UHV-CVD-TEM-FIB (IBM)
Typical Ga+ Dose: 1014 cm-2
University of Virginia
Center for Nanoscopic Materials Design
• Intrinsic Merit– Fundamental advances in understanding epitaxial nucleation on
locally modified surfaces– Detailed understanding of FIB-guided nucleation: local strain plus
surface nano-topography– Scaleable to large arrays – FIB write speed c. 104 features per
second– Extraploation to new systems e.g. epitaxial metallic oxide dots (J.
Groves, Y. Du, UVa)• Broader Impact
– Possible application to Quantum Cellular Automata and other Nanoelectronic Architectures (with G. Snider, X. Luo, Notre Dame)
– Close collaboration between leading industrial research lab (IBM Yorktown Heights) and UVa MRSEC
– Integration of Research and Education: new course at UVa – MSE 791, Nanoscale Processes at Surfaces
• Next Steps– Smaller QD spacings (reduce instrumental vibration, smaller ion
spot sizes)– Developing mass-selecting FIB column: Si, Ge, As. B beams from
mass separated alloy sources– In-situ LEEM, STM studies
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