Texas Instruments
James F. SalzmanDistinguished Member Technical Staff
Director of Technology, Radiation [email protected]
Radiation Effects, and Solutions
for
Space, & HiRel Applications
AMICSA 2010Third International Workshop on Analogue and Mixed Signal Integrated Circuits for Space Applications
5-7 September 2010 Noordwijk, The Netherlands
James F. Salzman
Agenda
• TI HiRel Division Overview
• TI Fabrication Overview
– Freising Wafer Fab - BiCOM
• ELDRS & Mitigation
• The Need for Reliable Space Products
– Satellite Failures
– Product Up-Screening issues
• Understanding Reliability for Space Products
– Bathtub Reliability Curve
– Extrinsic & Intrinix mechanisms
• Space Product Examples
• Summary
AMICSA 2010
James F. Salzman AMICSA 2010
HiRel Products Life Cycle
IntroPhase
OutDeclineMaturityGrowth
ConsumerLife Cycle
As short as 9 months
As long as 30 years
ProductLongevityAssured
ProductLongevityAssured
Extended product life cycles• Obsolescence mitigation • Supply beyond commercial availability• Product resurrection
Leading-edge technology and manufacturing• HiRel approved fabs (certified by Defense &
Aerospace standards)• Access to latest process technologies (HPA07, BiCom, etc.)• Broad packaging capabilities
Market expertise• Baseline control and qualification per unique
market requirements: TID, SEU, high-temp, ceramic, QML –Q/V, EP, die solutions, etc.
Commitment
Overview of TI HiRel Division
• 30+ years of experience working with HiRel customers • Largest dedicated organization in the industry • Worldwide sales and support infrastructure
James F. Salzman AMICSA 2010
DMOS 5
• 200mm wafers• CMOS & BiCMOS• Dallas, Texas• 180, 130 nm
DMOS 6
• 300mm wafers Advanced CMOS
• Dallas, Texas• 90, 65 & 45nm
MIHO 5 & 6
• 200mm wafers• CMOS• Miho, Japan
• 200mm wafers• CMOS• Buchon, Korea
ANAM
Advanced, Reliable, Worldwide Production Supply
FFAB
• 200mm wafers• CMOS and BiCMOS• Freising, Germany
• 200mm wafers• CMOS & BiCMOS• Military HiRel• Sherman, Texas
TI Sherman SFAB
• 200mm wafers• CMOS• DSP Headquarters• Houston, Texas
TI Stafford, Houston
DMOS 4• 200mm wafers• CMOS• Dallas, Texas• 250, 180 & 130nm
RFAB• 300mm wafers
Advanced BiCMOS• Dallas, Texas• 2.25X vs. 200mm
James F. Salzman AMICSA 2010
Hi-Rel COT Wafer Foundry Model
Over 50 process flows available for COT Engagements
Multiple Entry and Exit points for Customers
James F. Salzman AMICSA 2010
Year of foundation: 996 A.D. Oldest brewery in the world Approximately 47,000 inhabitants
City of FreisingCity of Freising
Texas Instruments DeutschlandTexas Instruments DeutschlandEstablished in Germany: 1961Start of Wafer Fab: 1976ISO 9001 / TS 16949 / ISO 14001/EMAS / OHSAS 18001 certified Major regional employer ~ 700 Employees450,000 W/year45% SiGe ( BiCOM )
James F. Salzman AMICSA 2010
BiCOM-3XX Technology Overview
• Technology Features:• Complementary SiGe BiCMOS• 0.35 & 0.18um Class• SiGe on SOI• Triple Metal• 5V & 3.3V CMOS• Isolated CMOS• 5V SiGe NPN• 5V SiGe PNP• TFR: NiCrAl 50 Ω/sq• C: 0.7 fF/um2 MIM• R: Poly 290 Ω/sq• Bipolar 3X Performance:
NPN PNP
HFE 200 100
VA 150 100
BVCEO 7.0 6.0
fT 25 25
• 200mm Wafers• Status: In Production• Process Extensions:
• 3X: 25 GHz • 3XL: 50 GHz • 3XHV: 36V
High-Speed & Performance
• Latch up Free• TID > 150K Rad(si)• ELDRS Free• Easy Photo Compensation
James F. Salzman AMICSA 2010
BaseEmitter Collector
ELDRS Effects in Bipolar
SiO2 + + +
Total dose radiation causes charge yield in SiO2, and allows interface trap generation under low dose rate conditions. Effect is same as base emitter leakage causing a drop in transistor Gain. i.e. more base current is needed for same collector current. Typically lateral PNP gains are low to begin with, and will drop rapidly under low dose rate.
SiGe uses a totally different type of structure with no base oxide, thus no hole trapping at high or low doses.
+ + +
James F. Salzman AMICSA 2010
ELDRS: Interface Trap Yield – Hfe reduction
Under high dose rate there is a high generation of electron-hole pairs (charge yield). The holes are forced to the interface by positive gate voltage, while the electrons are swept away into the gate. The buildup of holes at the interface form a positive charge barrier and repel the generated protons (hydrogen), keeping them from the interface and forming interface states. They typically will recombine.
Under lose dose rates there is low generation of electron-hole pairs. The holes are forced to the interface by positive gate voltage, while the electrons are swept away, in the same way under high dose rate, but the trapped hold buildup is much lower. The repelling force of the trapped holes is low enough to allow the generated protons (hydrogen) to migrate to the interface forming interface states.
James F. Salzman AMICSA 2010
Lateral PNP
Transistor HFE
10
20
30
40
50
60
70
5 10 15 20 25 30 35 40 45 50 55 60 65 70
Total Irradiated Dose Krads (si)
80
90
E-Test Limits
Device Design Limits
PNP HFE Dose Rate Effects
Enhanced Low Dose Rate Sensitivity
50 Rads/sec
10 mRads/sec
James F. Salzman AMICSA 2010
After J. R. Schwank, et al., IEEE Trans. Nucl. Sci. 34, 1152 (1987)
DVit Increases With the Amount of Hydrogen used in Processing
Process
A B C
Vit
(V)
0.0
0.5
1.0
1.5
tox = 101 nm
Dose = 100 krad(SiO2)
Increasing H
Process
A B C
Vit
(V)
0.0
0.5
1.0
1.5
tox = 101 nm
Dose = 100 krad(SiO2)
Increasing H
The Effects of Hydrogen in Analog IC Processing
Devices subject to 100% H2
Test transistors and circuits subjected to small amounts of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics.
Ronald L. Pease, IEEE Transactions on Nuclear Science, December 2004
8 Krad 35 Krad 60 Krad
Final Passivation (hydrogen injection) can greatly effect ELDRS performance in Bipolar Circuits
NH4 Used in producingCompressive Nitride Overcoat
Little Hydrogen present in Passivation Process
James F. Salzman AMICSA 2010
Unitrode & Bipolar Product Improvement
• Legacy Unitrode & Bipolar ELDRS performance from SFAB/MFAB ~ 8KRad
• SFAB process adjustment made: Improved Reliability and Hardness
• SFAB Bipolar process now passes 40KRAD @ 10mRad/sec(si) on following devices:– UC1825– UC1825A– UC1846– UC1843A– UC1525B
– UC1637W– UC19432JG
Device Function Package Old SMD # Old TI Part# New SMD # New TI Part#
UC1825 J (16-CDIP)
FK (20-LCCC)
5962-8768101VEA
5962-8768101V2A
UC1825JQMLV
UC1825LQMLV
5962-8768104VEA
5962-8768104V2A
UC1825J-SP
UC1825FK-SP
UC1825A J (16-CDIP) 5962-8768102VEA UC1825AJQMLV 5962-8768105VEA UC1825AJ-SP
UC1525B FK (20-LCCC) 5962-8951105V2A UC1525BLQMLV 5962-8951106V2A UC1525BFK-SP
UC1846 J (16-CDIP)
FK (20-LCCC)
5962-8680601VEA
5962-8680601V2A
UC1846JQMLV
UC1846LQMLV
5962-8680603VEA
5962-8680603V2A
UC1846J-SP
UC1846FK-SP
UC1843A JG (8-CDIP) 5962-8670406VPA UC1843AJQMLV 5962-8670409VPA UC1843AJG-SP
More devices to follow in 2010 & Customers can always drive new releases
In Qualification
Available Now !! – See new Standard Microcircuit Drawing numbers below.
In Qualification– SE555– AM26LS33
James F. Salzman AMICSA 2010
P - substrate
P+ Base PolySiGe EpiBase
Silicided Emitter Poly
Base Silicide
Intrinsic Epi
L-Spacer
InterpolyDielectric
SCI
Buried N+ Layer
BOX – Buried Oxide - ( Bonded Wafer Oxide ) – 0.4um
CollectorSilicide
Deep Trench
Charge Collection in BiCOM
Charge Collection Volume
NPN
Heavy Ion
++
+
-
--+
+
--
+-
+
+
ChargeTrack
Space craftparticle penetration
N+
James F. Salzman AMICSA 2010
JC-13 Government Liaison – TI ChairmanJC-13.4 Rad Hard – TI Participation• JC-13.1 Discrete Devices• JC-13.2 Microelectronics• JC-13.4 Rad Hard - TI Active• JC-13.5 Hybrids, RF/Microwave, MCM
JC-14 Quality & Reliability – TI Active
US Government Liaisons
• US Army• US Navy• US Air Force • NASA• DSCC• DMEA• GIDEP
Teaming
Europe/Japan/Asia
• JAXA - Japan Aerospace Exploration Agency
• ESA - European Space
Agency • CNES – French Space
Agency• DLR - Deutsches Zentrum für
Luft- und Raumfahrt e.V• BSNC - British National
Space Centre • DSO – Singapore Defense
Science Org• DOS/ISRO – India
Department of Space & Research
Collaborative Relationships
James F. Salzman AMICSA 2010
MIL-STD 883H Method 1019.8 Changes
Co60
Radiation Facilities
Updated MIL-STD 883H, Method 1019.8
Parts must be tested within one Hour after Radiation Exposure
1 Hour Max Time
Portable Test Equipment
This means you either have radiation sources at your company close to your testers, or you take a lot of test equipment to the Radiation Facilities. $$$$ !!!
Previous MIL-STD 883G, Method 1019.7
Co60
Radiation Facilities
20 Lbs Dry Ice
Barrier Foam Layer
Anti-Stat Styro Peanuts Fill
Tray with DUTs
-78.5 C
-37 C
-60 to -70 C
Styrofoam Liner
Styrofoam Top LidParts are exposed to Radiation and placed on Dry Ice and shipped to OEM
Parts now have up to 72 hours before testing must occur.( FedEx )
Dry Ice prevents annealing
This means you can ship parts for radiation exposure, and have them shipped back to your production test facilities for standard re-test….
TI ProductionTest Equipment
DRY ICE
James F. Salzman AMICSA 2010
Newspaper Headlines
Jan 15, 2009 - Engineers are trying to determine what happened to the telecommunications satellite Astra 5A, which inexplicably failed on Jan. 15 after 12 years of operation. The satellite has since been adrift in space, moving out of its geostationary position about 22,300 miles (35,888 km) above Earth and is moving eastward along its orbital arc.
Mar 7, 2009 - The reason for the loss of the satellite, experts confirmed, was a failure of its electronic components. And the so-called electronic-component base constituted the basis of this spacecraft. The loss of the satellite reminded specialists of a two-year-old story. ... Low-quality components said to be the cause of Russian satellite failure -
Mar 20, 2009 - ... ... the in-orbit satellite failure of the Coast Guard demonstration or the quick-launch satellites, satellite launch and construction delays and cost overruns and in-orbit satellite failures or reduced performance; the failure of our system or reductions in levels of service due to faulty components ...
Satellite Failure Rate ~ 20/year
Sept 1, 2009 The Indian space agency has announced that it lost contact with its lunar orbiter Chandrayaan-1 on Saturday last week. The mission, which has achieved most of its scientific objectives, carried three European instruments. Radio contact with Chandrayaan-1 was lost at 22:00 CEST on 28 August
Aug 08, 2009 NASA’s Mars Reconnaissance Orbiter is in safe mode, a precautionary standby status, and in communications with Earth after unexpectedly switching to its backup computer on Thurs. Aug. 6. This is the fourth computer shutdown on the Mar’s Reconnaissance Orbiter this year
Satellite Grim Reaper
James F. Salzman AMICSA 2010
KNOWN SEMICONDUCTOR FAILURE MECHANISMS
• Electromigration (leads, contacts, vias)• Stress Migration (notching, voiding)• Dielectric Leakage / Time-Dependent Dielectric Breakdown• Antenna Charging• Mobile Ions (surface inversion)• Corrosion• Channel Hot Carriers (parametric degradation, NMOS, PMOS)• NBTI (Negative Bias Temperature Instability)• Gate Oxide Integrity (GOI) Time Dependent Dielectric Breakdown TDDB• Thermo-Mechanical Stresses (shear, tensile, fillers, etc.)• Bonding (intermetallic voiding, chip-outs)• Heat Dissipation (impact on failure rate)• Radiation Effects
James F. Salzman AMICSA 2010
Typical Up Screening to QMLV flow by some Suppliers
Obtain die fromvarious sources
Radiation Test &Ceramic package
Up-Screening as Required
Sell to end User
• Typically Fab less• No process information• Unknown design rules• Unknown heritage• Unknown future
• Unknown FIT Mechanisms• NBTI• TDDB• CHC• Metal Migration• Etc.
• Out sourced to 3rd Party• May use several vendors• Relies on 3rd party quality• Lack of process information• Lack of Wafer Level Reliability• Lack of package Thermal Analysis
• Typical Lack of experience• Limited product information• Limited Destructive Physical Analysis Size• Lack of full time reliability Engineer• Commercial die reliability ~ 10 years
• Questionable Product• Lack of Ownership
James F. Salzman AMICSA 2010
The Reliability Bath Tub Curve
Time
Fa
ilure
Ra
te
Time
Fa
ilure
Ra
te
Extrinsic failures - caused by some type of processing or material defects
Intrinsic failures - happen as a result of wearout
The “bathtub curve” is really the addition of two curves.
James F. Salzman AMICSA 2010
No reliability discussion can be complete without mentioning the bathtub curve.
TYPICAL TIME (log scale)
Fai
lure
Rat
e
Infant MortalityExtrinsic Failures
Useful Lifetime
Wear outIntrinsic Failures
EFR Testing/Outlier Process Quals/WLRProduct Quals
6 months – 1 year 10 years
Burn-in 24 hrs
FIT
DPPM to Customer
EFRDPPM
Random Failures
The Reliability Bath Tub Curve
Defects Parts Per Million
James F. Salzman AMICSA 2010
The total intrinsic failure curve is the sum of the failure rate of allpossible wearout mechanisms.
Time
Fa
ilure
Rat
e
Total
Gate OxideTDDB
Electromigration
Channel Hot Carriers
A Closer Look at Intrinsic Failures
RadiationNBTI
Radiation is just one of many FIT mechanisms, and often is not the Major mechanism !!!
SmallRandom
FIT’s
Useful Life
James F. Salzman AMICSA 2010
James F. Salzman AMICSA 2010
James F. Salzman AMICSA 2010
DAC5670 2.4GSPS 14bit• 14-bit resolution• 2.4 GSPS maximum update rate DAC
– Dual differential input ports– Maximum 1.2 GSPS each port
• Selectable 2x Interpolation with Fs/2 mixing
• LVDS and HypertransportTM voltage level compatible
• Even/Odd demultiplexed data• DDR output clock• DLL optimized clock timing synchronized
to toggling• input reference bit• On-chip termination resistors• 3.3 V Analog Supply Operation• On-Chip 1.2V Reference• Differential Scalable Current Outputs: 2 to
20 mA• Power Dissipation: 1.5W @ max op
conditions• 192-pin Ball Ceramic BGA
Point to Point Microwave Telecommunication Transceiver Direct Synthesis Modems
EXTIO
EXTLO1.2 V
Reference
BIASJ
IOUTP
IOUTN14-b DAC
DAREFP
DAREFN
InputRCVR
DA[13:0]P
DA[13:0]N
x2
SIF
SC
LK
SD
EN
B
SD
O
SD
IO
InputFormatter
RESETB
TxENABLE
AVDD
AGND
DV
DD
DG
ND
Control
MO
DE
[7:0
]
DB[13:0]N
DB[13:0]P
CLK_OUTP
CLK_OUTN
CL
KP
CL
KN
IOG
ND
IOV
DD
DL
LL
OC
K
DL
LR
ES
ET
DLL
÷ 2
÷ 1÷ 2÷ 4
• Passed 100Krad(Si) TID• No SEL @ 85Mev• QMLV Qualified and Released
James F. Salzman AMICSA 2010
QML-V Data Converter Roadmap
2007 - 09 2010 2011 2012
DAC5670
14b 2.4 GHz
ADS5424
14b 105 MHz
ADS5400
12b 1GSPS
In Development
ADS5444
13b 250 MHz
ADS1278
8 Ch 24b 128KHz
DAC5675
14b 400 MHz
Released
ADS5463
12b 500 MHz
ADS6445
Quad 14b 125MSPS
James F. Salzman AMICSA 2010
TPS50601-SP6A Monolithic QMLV Point of Load DC-DC Converter
• -55oC to 210oC Operating Temp• Vin = 4.5V to 8V• Min Output Voltage to 0.9V• Integrated Power MOSFETS• TID performance – 100K Rad• No SEL @ > 85MeV• 6A Output Current
– 1A @ 210oC Operation • Synchronous operation
– 300kHz to 1.4MHz Switching Frequency • Power Good, Enable, Adjustable Slow-
start, Current Limit• Adjustable Under voltage Lockout• Cold Sparing capable• 20 Pin Ceramic Flatpack• Known Good Die (KGD) Options
• Start-up Inrush Current Limited
• Reduced External Components
• Easy On/Off Control
• Self-Protected from Fault Conditions
• Low Power Consumption when Switched Off
• Small with Good Thermal Performance
• Customers can use standard TI design software
Product Preview
James F. Salzman AMICSA 2010
TI Rad Hard SRAM Releases
James F. Salzman AMICSA 2010
• Strong technology/product portfolio for HiRel applications – New devices being QMLV and RHA qualified– Customer & Internal driven roadmaps
• TI-owned Wafer Fabs, Processes and Designs– Third party designs validated against TI design rules and processes
• Established QML-V qualification and production flows– Fully support New Technology requirements of MIL-PRF-38535– All optimizations approved through DSCC, Aerospace, and NASA
• Investments being made to enhance radiation tolerance and reliability– Addresses the needs of multiple market segments, DHD, Medical, Space -– Based on commercial high volume processes– 3rd party IP partnerships for radiation improvements– Specific devices may be ported to commercial rad-tolerant processes– Total dose radiation testing is performed at qualification on all new QML-V product
releases– Custom radiation test options are available for SEE & ELDRS characterization
-
TI Space Products and QML-V Strategies
James F. Salzman AMICSA 2010
For More Information
• The TI HiRel, Defense & Aerospace Internet Site
• http://www.ti.com/hirel
• The TI Product Information Center
• 1-800-477-8924
• support.ti.com/sc/pic/americas.htm
James F. Salzman AMICSA 2010
Thank You
James F. Salzman AMICSA 2010
James F. Salzman AMICSA 2010
Down Hole Drilling Harsh Environments
• Environmental Operating Issues– Shock and vibration– Temperature and pressure– High reliability over target lifetime
Seismic applications -40°C to +125°C 1 year
Logging while drilling -40°C to +150°C 1000 hours-40°C to +175°C 200 hours
Wireline -40°C to +175°C 400 hours
Reservoir monitoring +150°C to +225°C 6 months
Permanent applications +150°C 5 years
NBTI, hot carrier, device leakage and latchup are main issues
The same techniques used to harden against radiation effects, improve NBTI, device leakage, and latchup in high temperature applications !!
James F. Salzman AMICSA 2010
Targets• 1000MSPS sample rate • 12-Bit resolution• Total Power Dissipation: 2.2W• 72dBc SFDR at 1.25GHz IF and 1GSPS• 57.5dBFS SNR at 1.25GHz IF and 1GSPS• 2.1GHz -3dB Input Bandwidth• 2.0 Vpp Differential Input Voltage
– Adjustable from 1.5-2.0Vpp• DDR LVDS Outputs (1 or 2 Bus option)• Inter-leaving Trim Adjustments provided on-chip to achieve >1GSPS
– For gain: range 1.5-2.0Vpp, resolution 120uV– For offset: range +/-20mV, resolution 120uV– For clock phase: range +/-50ps, resolution 200fs
• 100 pin CQFP package• Temperature Range = -55°C to +125°C• Currently accepting pre-production sample orders!
ADS5400 - 12b 1GSPS ADC
James F. Salzman AMICSA 2010
Radiation Hardened 16M SRAM
The C05HA512K32 is a high performance CMOS SRAM organized as 524,288 words by 32 bits.
20ns read, 10ns write maximum access time
Asynchronous functionally compatible with commercial 512Kx32 SRAM’s
Built-in EDAC (Error Detection and Correction) to mitigate soft errors
Built-in Scrub Engine for autonomous correction (scrub frequency and delay is user defined user)
CMOS compatible input and output level, three state bidirectional data bus
3.3 +/- 0.3V I/O, 1.8 +/- 0.15V CORE
68 Lead Ceramic Quad Flat Pack
Qualified Product Release 3Q 2011
James F. Salzman AMICSA 2010
Passivation Can Drive Interface Trap Generation Under Radiation
After J. R. Schwank, et al., IEEE Trans. Nucl. Sci. 34, 1152 (1987)
Process
A B C
Vit
(V)
0.0
0.5
1.0
1.5
tox = 101 nm
Dose = 100 krad(SiO2)
Increasing H
Process
A B C
Vit
(V)
0.0
0.5
1.0
1.5
tox = 101 nm
Dose = 100 krad(SiO2)
Increasing H
The Interface Trap Generation Increases with the Amount of Hydrogen used in Processing
Metal 1SiO2 (TEOS)
Metal 2
SiO2 (TEOS)
Nitride
Active Components
MFAB
Metal 1SiO2 (TEOS)
Metal 2
SiO2 (TEOS)
SiO2 (TEOS)
Active Components
SFAB
Nitride passivation is produced using Ammonia NH3, +
Silane SiH4 where 11 hydrogen atoms are released to
form a single molecule of Si3NH4 ( Nitride ) passivation.
TEOS ( Tetraethylorthosilicate ) does not use Ammonia and has no hydrogen generation in the formation of
SiO2. It is used as interlevel dielectric. This step is
simply repeated for final passivation as a replacement for Nitride. Si(OC2H5)4 → SiO2 + 2O(C2H5)2
Trapped Hydrogen from Nitride Production SFAB TID ELDRS Level = 40-50K rads
MFAB TID ELDRS Level = 6-8K rads
Interface Traps Reduces Transistor Gain in Bipolar Transistors !!!
James F. Salzman AMICSA 2010
BiCOM3ZL – Technology Overview
• Technology Features:• SiGe BiCMOS ( 1833BiCOM3ZL)• DT / STI Isolation• 0.18 um 5LM• Gox = 75 /38 A• 50 GHz 3.3V NPN / PNP• 3.3V CMOS• 1.8V CMOS• Isolated NMOS• 15V DECMOS
• EEPROM• Poly Fuse• Varactors• C: 2.0 fF/um2 TIN• HSR: Poly 310Ω/sq• LSR: Poly 10Ω/sq• TFR: SiCr:C 50Ω/sq• Thick 6um Cu Inductors
• Q~15 @ 2 GH
• 200mm Wafers• 30% Shrink over 3XL• Status: Qualified Release 2Q10
NPN PNP
James F. Salzman AMICSA 2010
Top Related