Temperature dependence of sensor leakage current
Contents
•Introduction
•Measurement
•Result
•Summary
Junkichi Asai (RIKEN BNL Research Center)
(Hiroki kanoh (Tokyo Institute of Technology))
VTX Meeting 6/1/2004
Introduction
Tk
EATTI
B
g
2exp)( 2
::::
B
g
kEAT Temperature
sensor constant Energy gap =1.2 boltzmann constant
VI
::::
V
I Increase dark current damage constant [A/cm] sensor Volume [cm3] radiation flux [/cm2]
• Silicon breaks by Radiation damage:
dark current increases
• Main part of dark current is leakage current depending on temperature:
Setup
• Silicon strip sensor : 1st prototype detector
(2002 Nov : Test beam at KEK)
Currents
Voltage
Thickness: 400um
Channel: 384x384 (sum : 768 strips)
Front
Back
SensorAmmeter Voltage
Setup• device :
Senso
r
•Model 6487 Picoammeter/Voltage Source(Keithley Instruments) Voltage : as high as 500V Currents : as low as 20fA
•DAQ controlled by LabVIEW7 (programming by H. Kanoh)PC : Windows Connect : PCI-GPIB
•Temperature and Humidity controlled chamber(ESPEC LHU-113) T: -20 to 85oC (%RH : 0 to 95%)
Curren
ts
Voltag
e
PC
Front Back
Chamber
Ammeter Voltage
ChamberPCSensor Box
Measuring condition
•Sensor : In the chamber dark room keeping over 1day(for light sensitive)
•IV measurement : bulk=768 strips (not channel by channel)Bias Voltage : 0 ~ 500VCurrent : max 2mATemperature : -10 ~ 30 oCHumidity : 15% , 30%
Result (temperature dependence)
1.E- 10
1.E- 09
1.E- 08
1.E- 07
1.E- 06
1.E- 05
1.E- 04
1.E- 03
1.E- 02
1 10 100 1000
30℃25℃20℃15℃10℃5℃0℃-5℃-10℃
Bias Voltage [V]
Lea
kage
cur
rent
[A
]
Humidity : 30%
1.0E- 10
1.0E- 09
1.0E- 08
1.0E- 07
1.0E- 06
1.0E- 05
1.0E- 04
1.0E- 03
1.0E- 02
260 270 280 290 300
500V400V320V250V200V160V100V50V25V1V
Result (temperature dependence)L
eaka
ge c
urre
nt [
A]
[k]
Temperature
Bias Voltage
Humidity : 30%
-10 -5 0 5 10 15 20 25 30 [oC]
100Vconstant
Test beam @KEK : 80~90 V
@100V
T[oC]
I[uA]
30 70
25 51
20 32
15 20
10 15
5 10
0 8
-5 9
-10 9
Result (humidity dependence)
Bias Voltage [V]
[A]
1.0E-09
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
0 50 100 150 200
20℃ 30%20℃ 15%10℃ 30%10℃ 15%L
eaka
ge c
urre
nt
[A]
Summary
• RIKEN facility activity• Study temperature dependence of silicon leakage current• Silicon strip sensor : 1st prototype detector
thickness 400um, 768 strips
• Measurement : Bias Voltage 0~500 [V]temperature -10~30 [oC]
Humidity 15, 30 [%]
• Best operating temperature : 10oC, 15uA@100V
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