SU-8 Testing (v1b)
Thin SU8 on glass slideTest Soft Bake (SB) and Post Exposure
Bake (PEB)
“Control” Recipe
• Spin Coating: 10s @ 500rpm; 30s @ 2000rpm – (expected thickness?)
• Soft Bake (SB): 60s @ 93°C• Exposure: 8s @ 275 W• PEB: 60s @ 93°C• Develop: 4min in SU8 developer• SU8 developer rinse • IPA rinse/Nitrogen Dry
1st Set of Tests
4 samples; 8 devices/sample4 Wells (W)+4 Blanks (B)/sample• S1: “Control”: Misaligned (how?); All shorted; R(W) ~8.6Ω;
R(B)~10ΩTest Parameters:SB (RT Evap for 30min) and Vary PEB time @ 60°C?• S2: 8min PEB: R(W)=(2.7±0.8)Ω; R(B)=11MΩ±0; C(B) = ?pF• S3: 13min PEB: R(W)=(4.9±?)Ω; R(B=(5.6±7.7)MΩ; C(B)=? ±?• S4: 15min PEB: R(W)=(3.8±1)Ω; R(B)=(11±0)MΩ; C(B)=? ±?• Cracking patterns seen in S2, S3, S4
2nd set of test samples Summary
• 4 samples• 2 “Controls” Test Parameters: 1 min PEB @ 93°C and Vary SB time @ 60°C• SB: 2.5 min• SB: 5 min
2nd Test Results“Control 1” S5
Device Capacitance(pF)
Resistance(Ω) Type
1 -1 29.4 B
2 -1 0.5 W
3 9.38 3.7x10^6 B
4 -1 24 W
5 -1 24 B
6 -1 7 W
7 -1 421 B
8 -1 17 W
Summary: W: 4/4 Shorted B: 3/4 ShortedR(Well): (12.1 ± 10) ΩExcluding #3 R(Blank): (158± 230) ΩBlank Capacitance: 9.38 pF
“Control 2” S6Device Capacitance(p
F)Resistance(Ω) Type
1 Damaged (Too High Voltage)
9.7 4.6x10^6 W
2 9.33 8.3x10^6 B
3 Damaged (Too High Voltage)
9.61 3.04x10^5 W
4 9.4 1.05x10^7 B
5 -1 142 W
6 9.25 1.1x10^7 B
7 -1 46 W
8 10.3 12000 BSummary: W: 2/4 Shorted (2 Damaged by applying too high a voltage) B: 0/4 ShortedR(Well): (94± 68) Ω; C(Blank): (9.57± 0.5) pF
2.5min SB S7Device Capacitance(p
F)Resistance(Ω) Type
1 -1 13.4 W
2 -1 428 B
3 -1 10.8 W
4 -1 294 B
5 -1 3.7 W
6 -1 5.7 B
7 -1 4.1 W
8 -1 11.6 B
Summary: All Shorted R(Blank): 184.8± 211Ω
R(Well): 8± 4.9Ω
5min SB S8Device Capacitance(p
F)Resistance(Ω) Type
1 -1 4.8 W
2 -1 16 B
3 -1 1.9 W
4 -1 44 B
5 -1 4.3 W
6 Error? -1 - B
7* 15.16 1.76 W
8 15.25 0.57x10^6 B
Summary: W: 3/4 Shorted (why not 4/4?) B: 3/4 ShortedR(Blank): (30± 20)Ω (#8 excluded)R(Well): (3.7± 1.6) Ω7*: Remeasured and same effect ignored in the average. Strange that there is a Capacitance and low Resistance, Remeasured C and still high
“Control 2” 20x
“Control 2” 100x
“Control1” 100x
2.5min SB 100x
5min SB 100x
S9
• Back Contact Broken no Resistances• Measured Capacitances• W: 2/4 Shorted B: 1/4 Shorted• Avg Capacitance Well: 19.3± 0.6pF
Device Capacitance(pF)
Resistance(Ω) Type
1 -1 W
2 -1 B
3 12 W
4 19 B
5 -1 W
6 19 B
7 19 W
8 20 B
S10Device Capacitance(p
F)Resistance(Ω) Type
1 -1 4.5 W
2 -1 18 B
3 -1 6.7 W
4 -1 121 B
5 -1 3.9 W
6 -1 127 B
7 -1 5 W
8 -1 118 B
Summary: W: 4/4 Shorted B: 4/4 Shorted Avg Well Resistance: 5.0± 1.2Ω
Avg Blank Resistance: 96± 52Ω Double Exposed (16s)
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