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DatasheetS6404 SiC Schottky Barrier Diode Bare Die
Continuous forward current (Tc=145°C)
*1 Limited by Tj *2 Assumes Zth(j-a) of 0.16 °C/W or less. (Pulse Width = 8.3ms)
Features Inner Circuit
VR 1700V
IF 50A
QC 158nC
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
ConstructionSilicon carbide epitaxial planar type
Schottky diode
Absolute Maximum Ratings (Tj = 25°C )
Parameter Symbol Value Unit
Reverse voltage (repetitive peak) VRM 1700 V
Reverse voltage (DC) VR 1700 V
A
Surge non-repetitive forwardcurrent
PW=10ms sinusoidal, Tj=25°C
IFSM
150 A
PW=10ms sinusoidal, Tj=150°C 110 A
PW=10s square, Tj=25°C 630 A
IF 50
120i2t value
1≦PW≦10ms, Tj=25°C∫i2dt
A2s
1≦PW≦10ms, Tj=150°C 60 A2s
Range of storage temperature Tstg 55 to 175 °C
175Junction temperature Tj °C
*1
*2
*2
*1
1/4 2017.11 - Rev.A
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DatasheetS6404
Electrical characteristics (Tj = 25°C)
UnitMin. Typ. Max.
DC blocking voltage VDC IR =0.3mA 1700 - - V
Parameter Symbol ConditionsValues
1.95 V
IF=50A,Tj=150°C - 2.5 - VForward voltage VF
IF=50A,Tj=25°C - 1.65
IF=50A,Tj=175°C - 2.8 - V
Reverse current IR
VR=1700V,Tj=25°C - 5 300 A
VR=1700V,Tj=150°C - 110 - A
VR=1700V,Tj=175°C -
- pF
250 - A
- pFTotal capacitance C
VR=1V,f=1MHz - 3100
VR=1700V,f=1MHz - 170
- nC
Switching time tC VR=800V,di/dt=500A/s - 39 - ns
Total capacitive charge QC VR=800V,di/dt=500A/s - 158
2/4 2017.11 - Rev.A
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DatasheetS6404
Electrical characteristic curves
Fig.3 VR - IR Characteristics
Fig.1 VF - IF Characteristics
For
war
d C
urre
nt :
I F[A
]
Forward Voltage : VF [V]
Fig.2 VF - IF Characteristics
For
war
d C
urre
nt :
I F[A
]
Forward Voltage : VF [V]
Rev
erse
Cur
rent
: I
R[
A]
Reverse Voltage : VR [V]
Fig.4 VR-Ct Characteristics
Cap
acita
nce
Bet
wee
n T
erm
inal
s : C
t[p
F]
Reverse Voltage : VR [V]
0.001
0.01
0.1
1
10
100
1000
0 500 1000 1500
Ta=125ºC
Ta=175ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
Pulsed
Ta=125ºC
Ta=175ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
0
10
20
30
40
50
60
70
0.0 1.0 2.0 3.0 4.0
Pulsed
Ta=125ºC
Ta=175ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
1
10
100
1000
10000
0.01 0.1 1 10 100 1000
Ta=25ºCf=1MHz
3/4 2017.11 - Rev.A
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DatasheetS6404
Electrical characteristic curves
b2 5.64E-07 /°C2
1.52E-03 V/°C
b0 1.20E-02
b1 8.13E-05 /°C
Symbol Typical Value Unit
a0 9.21E-01 V
a1
Fig.5 Surge non-repetitive forward current vs. Pulse width (Sinusoidal waveform)*
Sur
ge n
on-r
epet
itive
for
war
d cu
rren
t : I F
SM
[A]
Pulse Width : PW [s]
Fig.6 Typical capacitance store energy
Cap
acita
nce
stor
ed e
nerg
y : E
C[
J]
Reverse Voltage : VR [V]
For
war
d C
urre
nt :
I F
Forward Voltage : VF
Fig.7 Equivalent forward current curve
VF = Vth + Rdiff IF
Vth ( Tj ) = a0 + a1 TjRdiff ( Tj ) = b0 + b1 Tj + b2 Tj
2
Vth1/Rdiff
Tj in ºC; -55 ºC < Tj < ºC ; IF < 100A
10
100
1000
1E-5 1E-4 1E-3 1E-2
Ta=25ºCSingle Pulse
0
50
100
150
200
250
300
0 500 1000 1500
* Assumes Zth(j-a) of 0.38 °C/W or less. (Pulse Width = 8.3ms)
4/4 2017.11 - Rev.A
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