PMV16XN20 V, N-channel Trench MOSFET11 November 2014 Product data sheet
1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.
2. Features and benefits• Trench MOSFET technology• Low threshold voltage• Very fast switching• Enhanced power dissipation capability of 1200 mW
3. Applications• LED driver• Power management• Low-side load switch• Switching circuits
4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 20 V
VGS gate-source voltage
Tj = 25 °C
-12 - 12 V
ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 8.6 A
Static characteristics
RDSon drain-source on-stateresistance
VGS = 4.5 V; ID = 6.8 A; Tj = 25 °C - 16 20 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting padfor drain 6 cm2.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 2 / 15
5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
1 2
3
TO-236AB (SOT23)
S
D
G
017aaa253
Table 3. Ordering informationPackageType number
Name Description Version
PMV16XN TO-236AB plastic surface-mounted package; 3 leads SOT23
6. MarkingTable 4. Marking codesType number Marking code
[1]
PMV16XN %BZ
[1] % = placeholder for manufacturing site code
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 3 / 15
7. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 20 V
VGS gate-source voltage
Tj = 25 °C
-12 12 V
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 8.6 A
VGS = 4.5 V; Tamb = 25 °C [1] - 6.8 A
ID drain current
VGS = 4.5 V; Tamb = 100 °C [1] - 4.3 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 27 A
[2] - 510 mWTamb = 25 °C
[1] - 1200 mW
Ptot total power dissipation
Tsp = 25 °C - 6940 mW
Tj junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tamb = 25 °C [1] - 1.2 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting padfor drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 4 / 15
Tj (°C)- 75 17512525 75- 25
017aaa123
40
80
120
Pder(%)
0
Fig. 1. Normalized total power dissipation as afunction of junction temperature
Tj (°C)- 75 17512525 75- 25
017aaa124
40
80
120
Ider(%)
0
Fig. 2. Normalized continuous drain current as afunction of junction temperature
aaa-015214
1
10-1
10
102
lD(A)
10-2
VDS (V)10-1 102101
DC; Tamb = 25 °C; 6 cm2tp = 100 ms
tp = 10 ms
DC; Tsp = 25 °C
tp = 1 ms
tp = 100 µs
tp = 10 µs
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage
8. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit
[1] - 208 245 K/Win free air
[2] - 88 104 K/W
Rth(j-a) thermal resistancefrom junction toambient
t ≤ 5 s [2] - 55 65 K/W
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 5 / 15
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistancefrom junction to solderpoint
- 13 18 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-013409
tp (s)10-3 102 10310110-2 10-1
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.200.25
0.500.75
0.33
0.02
0.01
0
0.100.05
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical valuesaaa-013411
tp (s)10-3 102 10310110-2 10-1
102
10
103
Zth(j-a)(K/W)
10
0.010.02
0.33
0.75
duty cycle = 1
0.050.100.200.25
0.50
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 6 / 15
9. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-sourcebreakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V
VGSth gate-source thresholdvoltage
ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.9 V
IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA
VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current
VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA
VGS = 4.5 V; ID = 6.8 A; Tj = 25 °C - 16 20 mΩ
VGS = 4.5 V; ID = 6.8 A; Tj = 150 °C - 23 29 mΩ
VGS = 2.5 V; ID = 6.0 A; Tj = 25 °C - 18 24 mΩ
RDSon drain-source on-stateresistance
VGS = 1.8 V; ID = 2.1 A; Tj = 25 °C - 22 33 mΩ
gfs forwardtransconductance
VDS = 10 V; ID = 2 A; Tj = 25 °C - 12 - S
RG gate resistance f = 1 MHz - 2 - Ω
Dynamic characteristics
QG(tot) total gate charge - 13.4 20.2 nC
QGS gate-source charge - 1.5 - nC
QGD gate-drain charge
VDS = 10 V; ID = 7.3 A; VGS = 4.5 V;Tj = 25 °C
- 2.6 - nC
Ciss input capacitance - 1240 - pF
Coss output capacitance - 145 - pF
Crss reverse transfercapacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;Tj = 25 °C
- 125 - pF
td(on) turn-on delay time - 9 - ns
tr rise time - 24 - ns
td(off) turn-off delay time - 31 - ns
tf fall time
VDS = 10 V; ID = 7.3 A; VGS = 4.5 V;RG(ext) = 6 Ω; Tj = 25 °C
- 36 - ns
Source-drain diode
VSD source-drain voltage IS = 1.2 A; VGS = 0 V; Tj = 25 °C - 0.65 1.2 V
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 7 / 15
VDS (V)0 542 31
aaa-015610
ID(A)
28
20
12
4
0
8
16
24
VGS = 1.3 V
1.5 V
1.7 V
1.8 V
4.5 V3.0 V2.5 V2.0 V
Tj = 25 °C
Fig. 6. Output characteristics: drain current as afunction of drain-source voltage; typical values
017aaa796
VGS (V)0 1.20.80.4
10-5
10-4
10-3
10-2
ID(A)
10-6
min typ max
Tj = 25 °C; VDS = 5 V
Fig. 7. Sub-threshold drain current as a function ofgate-source voltage
ID (A)0 252010 155
aaa-015611
0.04
0.02
0.06
0.08
RDSon(Ω)
0
1.5 VVGS = 1.4 V 1.6 V 1.7 V
1.8 V
1.9 V
2.0 V2.2 V
2.6 V3.0 V
4.5 V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values
VGS (V)0 542 31
aaa-015612
0.04
0.02
0.06
0.08
RDSon(Ω)
0
Tj = 25 °C
Tj = 150 °C
ID = 6.8 A
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 8 / 15
VGS (V)0 321
aaa-01561328ID(A)
0
4
8
12
16
20
24
Tj = 25 °C
Tj = 150 °C
VDS > ID × RDSon
Fig. 10. Transfer characteristics: drain current as afunction of gate-source voltage; typical values
Tj (°C)-60 1801200 60
017aaa800
1.00
0.75
1.25
1.50
a
0.50
Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typicalvalues
Tj (°C)-75 17512525 75-25
017aaa801
0.5
1.0
1.5
VGS(th)(V)
0
max
typ
min
ID = 0.25 mA; VDS = VGS
Fig. 12. Gate-source threshold voltage as a function ofjunction temperature
VDS (V)10-1 102101
017aaa802
103
102
104
C(pF)
10
Ciss
Coss
Crss
f = 1 MHz; VGS = 0 V
Fig. 13. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 9 / 15
QG (nC)0 15105
017aaa803
1.5
3.0
4.5
VGS(V)
0
ID = 6 A; VDS = 10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gatecharge; typical values
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 15. MOSFET transistor: Gate charge waveformdefinitions
aaa-015614
VSD (V)0 1.20.80.4
2
3
1
4
5Is
(A)
0
Tj = 25 °C
Tj = 150 °C
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
10. Test information
t1t2
P
t006aaa812
duty cycle δ =
t1
t2
Fig. 17. Duty cycle definition
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 10 / 15
11. Package outline
ReferencesOutlineversion
Europeanprojection Issue date
IEC JEDEC JEITA
SOT23 TO-236AB
sot023_po
14-06-1914-09-22
Plastic surface-mounted package; 3 leads SOT23
bp
D
A
A1
Lp
Q
HE
E
0 1 2 mm
scale
c1 2
3
B
w B
e
e1
v A
A X
Unit
mmmaxnommin
1.1 0.1 0.15 3.0 1.40.2
A
Dimensions (mm are the original dimensions)
A1 bp
0.48
c D E e e1
0.95
HE Lp Q v w
0.11.92.1 0.150.9 0.09 2.8 1.20.38
2.5 0.45
0.45
0.55
detail X
Fig. 18. Package outline TO-236AB (SOT23)
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 11 / 15
12. Soldering
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5(3×)0.6(3×)
0.6(3×)
0.7(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4(2×)
1.2(2×)
2.2
2.6
Dimensions in mm
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 12 / 15
13. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes
PMV16XN v.1 20141111 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 13 / 15
14. Legal information
14.1 Data sheet statusDocumentstatus [1][2]
Productstatus [3]
Definition
Objective[short] datasheet
Development This document contains data fromthe objective specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before initiating orcompleting a design.
[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.
14.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.
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In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.
Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.
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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.
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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.
Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.
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© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 14 / 15
grant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.
Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.
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In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without Nexperia’s warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondNexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design anduse of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.
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14.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.
© Nexperia B.V. 2017. All rights reserved
Nexperia PMV16XN20 V, N-channel Trench MOSFET
PMV16XN All information provided in this document is subject to legal disclaimers.
Product data sheet 11 November 2014 15 / 15
15. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Marking ................................................................... 27 Limiting values .......................................................38 Thermal characteristics .........................................49 Characteristics .......................................................610 Test information ..................................................... 911 Package outline ................................................... 1012 Soldering .............................................................. 1113 Revision history ...................................................1214 Legal information .................................................1314.1 Data sheet status ............................................... 1314.2 Definitions ...........................................................1314.3 Disclaimers .........................................................1314.4 Trademarks ........................................................ 14
© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 11 November 2014
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