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PHI 710 Scanning Auger Nanoprobe
Complete Auger Compositional Analysisfor Nanotechnology, Semiconductors,
Advanced Metallurgy and Advanced Materials
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PHI Auger 710 Superior Analytical Capabilities
Nanoscale image resolution
Image registration for high sensitivity
Constant sensitivity for all sample geometries
High sensitivity at low tilt angles for insulator analysis
Nano-volume depth profiling
Chemical state analysis: spectra, imaging, depth profiling
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PHI 710 Secondary Electron Imaging (SEI)3 nm from Au Islands on Carbon
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PHI 710: High Spatial Resolution Auger
Ga Map 25kV; 1nA 256x256 pixels Line Analysis Al Map 25kV; 1nA 256x256 pixels Line Analysis
Locations for Line Scans Area Analyzed4 nm Al LineAlGaAs Line Width (nm)
AugerLine
Scans
Sample provided by Federal Institute for Materials Research and Testing (BAM)Berlin, Germany
BAM-L200 Standard Sample
1
2
3
4
24 Hour stability test demonstrating exceptional image registry
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PHI 710: High Spatial Resolution Auger
4 nm Line
Line Scan #4
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35Distance (µm)
Inte
nsity
Ga
Al (X3)
BAM-L200 Standard Sample
24 hour analysis demonstrating exceptional image registration
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Constant Sensitivity for All Geometries
0
200
400
600
800
1,000
1,200
1,400
1,600
1,800
2,000
-90 -75 -60 -45 -30 -15 0 15 30 45 60 75 90
Tilt Angle (degree)
Sen
sitiv
ity (k
cps)
Sensitivity vs. Sample Tilt
Coaxial CMA
Non-Coaxial SCA
The CMA with a coaxial electron gun provides high sensitivity at all sample tilt angles which is essential for insulator analysis
Minimum Beam DiameterField
Emission Electron Source
Cylindrical Mirror
Analyzer
Multi-ChannelDetector
Sample holder with high energy resolution optics
Ar+ Ion Gun
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CMA with Coaxial Electron Gun
Poly-Si/W Deposition and PatterningAuger Analysis of ex situ FIB cut
Auger Maps:Si oxideSi elementalW
Auger maps show: Defect is sub-micron Si oxide particle Surrounded by elemental Si Introduced during poly-Si deposition Covered with W
Only the PHI 710 can image samples such asFIB sections with uniform, high sensitivity
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PHI CMA High Energy Resolution Mode
How does the high energy resolution mode work?– The CMA energy resolution is given as:– ΔE / E = 0.5%– An optics element placed between the sample surface and
the entrance to the standard CMA retards the Auger electrons, reducing their energy, E
– From the energy resolution equation, if E is reduced, ΔE is also reduced and so is the Auger peak width; energy resolution is improved
– The CMA is not modified in any way and retains a 360º coaxial view of the sample relative to the axis of the electron gun
– US Patent 12 / 705,261
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PHI CMA High Energy Resolution Mode
710 Energy Resolution Specification
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0 500 1000 1500 2000 2500
Auger Peak Kinetic Energy (eV)
ΔE
/ E (%
)
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PHI CMA High Energy Resolution Mode
Auger KLL spectrum of native oxide on Al foil measured on PHI CMA at 0.5% (blue) and 0.1% (red) energy resolution, after background subtraction.
1350 1360 1370 1380 1390 1400 1410 1420-50
0
50
100
150
200
250
300
350
1393.4 (Al metal)1386.9 eV (Al oxide)
Kinetic Energy (eV)
N(E
) cps
0.5%0.1%
Al KLL Spectra of Native Oxide on Al Foil
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PHI CMA High Energy Resolution Mode
970 980 990 1000 1010 1020 10300
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Kinetic Energy (eV)
Nor
mal
ized
Inte
nsity
Zn LMM Spectra of Sputter Cleaned Zn Metal0.5% Energy Resolution0.1% Energy Resolution
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PHI CMA High Energy Resolution Mode
0.1% Energy Resolution
Si oxide
Si plasmons
Si elemental
1580 1590 1600 1610 1620 16300
20
40
60-2
0
2
4
6
8
x 104
Kinetic Energy (eV)
c/s
Depth Profile of Native Oxide on Si
10 kV - 10 nA20 µm defocused beam4 minutes per cycle
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PHI CMA High Energy Resolution Mode
Zn oxide Zn metal
970 980 990 1000 1010 1020 10300
5
10
8.4
8.6
8.8
9
9.2
9.4
9.6
9.8
x 105
Kinetic Energy (eV)
c/s
Depth Profile of Zn Oxide on Zn
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PHI 710 Spectral Window Imaging
IC412_256.map: Pad 41 PHI
2012 Sep 22 10.0 kV 10 nA FRR 0.00 s
Si4/-1 RSF
32297
746520 µm
20 µ
mSi4.ls3
IC412_256.map: Pad 41 PHI2012 Sep 22 10.0 kV 10 nA FRR 0.00 sSi4/-1 RSF
47.0
0.020 µm20
µm
Si4.ls1+Si4.ls2+Si4.ls3
Panel A shows a 200 µm FOV SEI of a semiconductor bond pad. Panel B shows the Si KLL peak area image from the area of panel A. Panels C, D and E show the chemical state images of silicide, elemental Si and Si oxynitride respectively. Panel F shows a color overlay of elemental silicon, silicide and silicon oxynitride images.
A B
ED
SEI
Elemental Si Si Oxynitride
SilicideC4094
892.8
IC.401.sem: Pad 41 PHI
2012 Sep 21 10.0 kV 10 nA FRR
SEM/-1 RSF
20 µm
20 µ
m
SEM
IC412_256.map: Pad 41 PHI
2012 Sep 22 10.0 kV 10 nA FRR 0.00 s
Si4/-1 RSF
3462175
113732920 µm
20 µ
m
Si4
Si KLL Peak Area
IC412_256.map: Pad 41 PHI
2012 Sep 22 10.0 kV 10 nA FRR 0.00 s
Si4/-1 RSF
32297
746520 µm
20 µ
m
Si4.ls1
IC412_256.map: Pad 41 PHI
2012 Sep 22 10.0 kV 10 nA FRR 0.00 s
Si4/-1 RSF
32297
746520 µm
20 µ
m
Si4.ls2
F Si Chemical States
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PHI 710 Spectral Window ImagingA B
C
Composite Si KLL
IC412_256.map: Pad 41 PHI
2012 Sep 22 10.0 kV 10 nA FRR 0.00 s
Si4/-1 RSF
3462175
113732920 µm
20 µ
m
Si4
Elemental Si
SilicideSi Oxynitride
Si KLL image with ROI areas
Si KLL Basis Spectra
1604 1608 1612 1616 1620 1624Kinetic Energy (eV)
Inte
nsity
1605 1615 1625Kinetic Energy (eV)
Inte
nsity
Panel A shows the Si KLL spectrum from the sum of all pixel spectra in the Si KLL Auger image shown in panel B. Panel B shows the three Regions Of Interest (ROI) selected for creation of the basis spectra for Linear Least Squares (LLS) fitting of the Si KLL image data set. Panel C shows the three basis spectra with their corresponding chemical state identifications.
PHI App. Note: Chemical State Imaging WithThe PHI 710 Scanning Auger NanoProbe
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Nanocone Imaging
N Map 256 x 256 pixels SEI HR Si-oxide Map at 0.1% Energy Resolution
Only the larger Nanocone contains N Both the large and small features contain Silicon oxide
The composition suggested by the images is confirmed with high energy resolution analysis
Smaller Silicon Oxide Feature Smaller Silicon Oxide Feature
Auger Images SuggestLarger Nanocone Surface Composed of Silicon Oxide and Nitride
2O kV – 10 nA
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Nanocone Chemical Analysis
Si NitrideStandard
Large Nanocone Base 0.1% Energy Resolution
Nanocone base is mixture of silicon oxide and silicon nitride
Si OxideStandard
1600 1605 1610 1615 1620 1625 16300
0.2
0.4
0.6
0.8
1
Kinetic Energy (eV)
Nor
mal
ized
Inte
nsity
Si KLL
20 kV – 10 nA
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PHI 710 Advantages
World’s best Auger depth profiling– Floating column ion gun for high current, low voltage depth
profiling– Compucentric Zalar Rotation™ maximizes depth resolution– Image registration maintains field-of-view
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Low Voltage Depth Profiling
0 10 20 30Sputter Time (min)
Inte
nsity
As
Ga
Al
0 200 400 600 800Sputter Time (min)
Inte
nsity
As
Al
Ga
500 eV Depth Profile 100 eV Depth Profile
Improved Interface Definition with use of Ultra Low Ion Energies
AlAs/GaAs Super Lattice Sample
Improved definition of layers
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Nano Depth Profiling
FOV: 2.0 µm
F
0.5 µm
1
P from the growth gas is detected on the surface of a Si nanowire
20 kV, 10 nA, 13 nm Beam
60 nm Diameter Si Nanowire
100 200 300 400 500 600 700 800-2
-1.5
-1
-0.5
0
0.5
1x 10
4
Kinetic Energy (eV)
c/s
Atomic %Si 97.5P 2.5
O
CSi
P
Surface Spectrum of Nanowire A
SEI
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Non-homogeneous P Doping of Si Nanowires
500 V Ar sputter depth profiling shows a non-homogeneous radial P distribution. The data suggests Vapor-Solid incorporation of P rather than Vapor-Liquid-Solid P incorporation
Depth Profile of Nanowire B
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Compucentric Zalar Rotation Depth Profiling
Ion Beam
Sample
AnalysisArea
Zalar rotation is used to eliminate sample roughening that can occur when sputtering at a fixed angle.
Compucentric Zalar rotation depth profiling defines the selected analysis point as the center of rotation. This is accomplished by moving the sample in X and Y while rotating, all under software control.
Micro-area Zalar depth profiling is possible on features as small as 10 µm with the 710’s automated sample stage.
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Compucentric Zalar Rotation Depth Profiling
0 50 100 150 200 250 3000
20
40
60
80
100
Sputter Time (min)
Ato
mic
Con
cent
ratio
n (%
)
O
Al (oxide)
Al (metal) Si
Compucentric Zalar Depth Profile of 10 µm Via Contact
Secondary Electron Image(Before Sputtering)
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Compucentric Zalar Rotation Depth Profiling
0 50 100 150 200 250 3000
20
40
60
80
100
Sputter Time (min)
Ato
mic
Con
cent
ratio
n (%
)
O
Al (oxide)
Al (metal) Si
Depth Profile Comparison With and Without Zalar Rotation
0 50 100 150 200 250 3000
20
40
60
80
100
Sputter Time (min)
Ato
mic
Con
cent
ratio
n (%
)
Al (metal)
O
Al (oxide)
Si
Without RotationWith Rotation
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Compucentric Zalar Rotation Depth Profiling
Without RotationWith Rotation2500X2500X
SE Images of 10 µm Via Contactsafter Depth Profiling
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Large Area Chemical Depth Profile of Ni/Si WaferAnnealed at 425 ºC
0.1% Energy Resolution 10 kV-10 nA20 µm AverageAs Received
Sputter Conditions:500 V Argon1 x 0.5 mm raster
No Zalar Rotation10° Sample Tilt
Chemical State of Si ? Chemical State of Ni ?
0 10 20 30 40 50 600
100
200
300
Sputter Time (min)
Inte
nsity
(kcp
s)
Ni LMM
Si KLL
Elemental Depth Profile
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Large Area Chemical Depth Profile of Ni/Si WaferAnnealed at 425 ºC
Si in Ni layer
Si inSi substrate
0 10 20 30 40 50 60
0
100
200
Sputter Time (min)
Inte
nsity
(kcp
s)
Si KLL
Si Chemical Depth Profile Created Using Linear Least Squares Fitting
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Large Area Chemical Depth Profile of Ni/Si WaferAnnealed at 425 ºC
0.1% Energy ResolutionSi basis spectra for LLS Si basis spectra for LLS (expanded)
1616.5 eV(metal)
1617.2 eV(silicide)
Si in Ni layerSi inSi substrateSi in Ni layer
Si inSi substrate
1570 1590 1610 1630Kinetic Energy (eV)
Nor
mal
ized
Inte
nsity
1610 1615 1620 1625Kinetic Energy (eV)
Nor
mal
ized
Inte
nsity
Si KLL Si KLL
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Large Area Chemical Depth Profile of Ni/Si WaferAnnealed at 425 ºC
0.1% Energy Resolution
Ni in Ni layer Ni inSi substrate
0 10 20 30 40 50 60
0
100
200
300
Sputter Time (min)
Inte
nsity
(kcp
s)
Ni LMM
Si Chemical Depth Profile Created Using Linear Least Squares Fitting
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Large Area Chemical Depth Profile of Ni/Si WaferAnnealed at 425 ºC
Ni basis spectra for LLS Ni basis spectra for LLS (expanded)
844.8 eV(Ni-silicide)
846.2 eV(Ni-metal)
Ni in Ni layerNi inSi substrateNi in Ni layer
Ni inSi substrate
0.1% Energy Resolution
810 820 830 840 850 860 870 880Kinetic Energy (eV)
Nor
mal
ized
Inte
nsity
830 835 840 845 850 855 860Kinetic Energy (eV)
Nor
mal
ized
Inte
nsity
Ni LMM Ni LMM
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Large Area Chemical Depth Profile of Ni/Si WaferAnnealed at 425 ºC
FOV: 5.0 µm 20.000 keV
Fe3C 2/16/2010F
1.0 µm
1
2
SEM 20kV - 1nA Analysis points
Point 1: Ni-silicidePoint 2: Si-metal
After Depth Profile
Auger multi-point analysis shows composition of nano-structures
500 1000 1500 2000
1.0
1.5
2.0
2.5
Kinetic Energy (eV)
Inte
nsity
(Mcp
s)
Si
Ni
||||
Si
Si
Si
NiNi
C
C
Ni Point 1
Point 2
22 nm beam size
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Large Area Chemical Depth Profile of Ni/Si WaferAnnealed at 425 ºC
After Depth Profile0.1% Energy Resolution
1616.5 eV(metal)
1617.2 eV(silicide)
Point 2Si inSi substrate
Point 1Si in Ni layer
Point 1Si in Ni layer
Point 2Si inSi substrate
1570 1580 1590 1600 1610 1620 1630 1640Kinetic Energy (eV)
Nor
mal
ized
Inte
nsity
1610 1615 1620 1625Kinetic Energy (eV)
Nor
mal
ized
Inte
nsity
Si KLL
22 nm beam size
Si KLL (expanded)22 nm beam size
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Ni/Si Annealed at 425 °C
FOV: 5.0 µm 20.000 keV
Ni/Si 425C 3/30/2010F
1.0 µm
1
2
1
2
SEM 20 kV - 10 nA Analysis points Auger Color Overlay 20 kV - 10 nA 256 x 256 pixels
12 nm Removed
Nano-areas selected for depth profiling
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Nano Area Chemical Depth Profile of Ni/Si WaferPoint 1 – Ni Layer
10 kV – 10 nAPoint 1LLS Profile
Sputter Conditions:500 V Argon1 x 0.5 mm raster
No Zalar Rotation10° Sample Tilt
Nano area depth profile shows nickel silicide at the nickel / silicon interface Large area depth profile included heterogeneous distributions of nickel silicide
that grows through imperfections in Ni film
0 20 40 60 80 100 120 140 160 180 2000
100
200
Sputter Depth (nm)
Inte
nsity
(kcp
s)
Si metal
Si silicide
Ni metal
Ni silicide
Chemical Depth Profile Created Using Linear Least Squares Fitting
22 nm beam size
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PHI 710 Scanning Auger NanoprobeMulti-technique Options
The Complete Auger Solution
Energy Dispersive Spectroscopy (EDS or EDX)
Backscatter Electron Detector (BSE)
Electron Backscatter Diffraction (EBSD)
Focused Ion Beam (FIB)
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PHI 710 Chamber Layout for Options
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PHI 710 Scanning Auger Nanoprobe
Complete Auger Compositional Analysisfor Nanotechnology, Semiconductors,
Advanced Metallurgy and Advanced Materials
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