Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Li-Jen Chou ( 周立人 )
低維奈米結構研究:合成、鑑定、應用與基本成長機制
( Investigations on low-dimensional nanostructures: synthesis, characterization, applications and f
undamental mechanisms )
Department of Materials Science and EngineeringNational Tsing Hua University, Hsinchu, Taiwan
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Team Members
– 各教師成長不同奈米結構材料
– 陳力俊 : 超高真空穿透式電子顯微鏡觀測– 果尚志 : 多重尺度及階層式的組裝及量測– 呂世源 : 表面功能化處理– 周立人 : 場發射穿透式電子顯微鏡觀測– 徐文光 : 機械性質量測– 嚴大任 : 電子束微影與微光學量測
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
96年執行情形
Publication 陳力俊、果尚志、呂世源 周立人、徐文光、嚴大任s: Impact No. (No. Papers)PI 1: ~10 (3), ~8 (2), ~6 (1), ~4 (7)PI 2: ~ 4 (13)PI 3: ~ 6 (1), ~5(1), ~4 (2)PI 4: ~10 (2), ~8 (2), ~6 (2), ~4 (2)PI 5: ~ 4 (4)Nano Lett. (~10), Adv. Mater. (~8), Small (~6), Che
m. Mater. (~5), J. Mater. Chem. Appl. Phys. Lett. (~4)
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
97年執行情形
Publications: Impact No. (No. Papers)PI 1: ~ 26 (1), ~ 10 (3), ~8 (3), ~4 (2) , > 3.5 (2)PI 2: ~ >7 (2), >5 (2), > 3.5 (7)PI 3: ~ >8 (1), >6 (1), ~5(2), ~4 (2), > 3.5 (3)PI 4: ~ 10 (3), ~4 (2) , ~ 3.5 (1) PI 5: ~ 4 (1), ~ 3.5 (4) PI 6: ~ 8 (1) , ~ 4 (1) Science (~26), Nano Lett. (~10), Adv. Mater. (~8), S
mall (~6), Chem. Mater. (~5), J. Mater. Chem. (~4), Appl. Phys. Lett. (~3.5)
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Prof. Z.L. Wang (Gatech, USA)
Profs. K.N. Tu, Y. Hwang (UCLA, USA)
Prof. D. Shindo (Tohoku Univ. Japan)
Prof. S. Isoda (Kyoto Univ. Japan) Profs. M. Aono, Y. Bando, (NIMS, Japan)
國際合作、校外合作、產學合作
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Observation of Atomic Diffusion at Twin-modified Grain Boundaries in Copper
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
K.C. Chen et al. Science, 321, 1066 (2008).
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
PSSA Back Cover, May, 2008
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
J. Mater. Chem. Invited
Highlight Paper
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Y.C. Lin et al. Nano Lett. 8, 913 ( 2008)
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
“In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi2 in nanowires o
f Si,”
Nano Letters 8, 2194 (2008).
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
50
60
F (
nN)
|L-L0|
(g)(b) (c)
(d) (e) (f)
(a)
0.0 0.3 0.6 0.9 1.2 1.5
0
3
6
9
12
Stre
ss (
MP
a)
Strain (%)
G
L0 L(h)
(µm)
Pcr
3µm
R
L d
Adv. Mater. 20 , 3919 (2008)
”Elastic Properties and Buckling of Silicon Nanowires,”
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Formation and Characterization of NixInAs/InAsNanowire Heterostructures
Nano Letters, Vol. 8, No. 12, p 4528 - 4533, (2008).
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Nano Letters, Vol. 8, No. 10, p 3288 - 3292, (2008).
Coaxial Metal-Oxide-Semiconductor (MOS)
Au/Ga2O3/GaN for Nitride Based Logic Nano
devices
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Coaxial Metal-Oxide-Semiconductor (MOS) Au/Ga2O3/GaN Nanowires
Nano Letters, Vol. 8, No. 10, p 3081 - 3085, (2008).
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Tunable Plasmonic Response from Alkanethiolate-Stabilized Gold Nanoparticle Superlattices: Evidence of Near-Field Coupling
J. Am. Chem. Soc. (Communication) 2008, 130, 824−826
自組裝金奈米粒子超晶格 ( 晶格常數可調 ) 群體耦合式電漿光學響應 ( 近場耦合 )
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Comparison of Ni-Si and Co-Si systems
Y.C. Chou et al. Nano Lett. 9 (in press, 2009)
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
M.P. Lu et al. “Piezoelectric Nanogenerator using p-type ZnO Nanowire Arrays,” Nano Lett. 9, 1223 (2009)
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Figure 7.4 (a-c) A sequence of TEM images of the Au-Ga2O3 core-shell nanowires transform into Au-peapodded Ga2O3 nanowires heated at 1000 in the in-situ TEM.℃
In-situ Observation of Complex NanowiresResults and Discussion
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Nano-Photonic Switch
Surface Plasmon Resonance (SPR )of Metal Nanoparticles
Nano Letters, Vol. 8, No. 10, p 3288 - 3292, (2008).
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
In our case, an electric potential hologram was acquired by the electron holography under the illumination of the green and red lasers.
Procedures
Green Light
Turn on Turn on
Red Light
Experimental Procedures
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Figure (a) and (b) are the electron hologram and reconstructed phase imageunder the illumination of 532 nm laser. The phase shift is mostly due to the mean field potential.
(a) (a)(a) (b)
dzzyxcvV
),,(])/(11[
22
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
The phase shift image (right figure) due to the LSPR effect (under green light) is deduced.
We assume that these bright spots is due to the excited state of the electrons.
High ElectricPotential Area
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
The phase shift due to the excited electrons is not obvious under the illumination of red light,which is consistent with the LSPR theory.
Opto-Electronics & Materials LaboratoryOpto-Electronics & Materials Laboratory
Prelim. Results
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In-situ TEM FE Measurements
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Thanks For Your Attention
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