HY4008W/A
N-Channel Enhancement Mode MOSFET
1
Pin DescriptionF
•
•
•
•
TO-247-3L
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AW A : TO-3P-3LW : TO-247-3L
HOOYIHOOYI
HOOYI
reserves the right to make changes to improve reliability or manufacturability without notice, andadvise customers to obtain the latest version of relevant information to verify before placing orders.
Ordering and Marking Information
N-Channel MOSFETG
S
D
Note: lead-free products contain molding compounds/die attach materials and 100% matte tin platetermination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-freerequirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.defines “Green”to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight inhomogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
Package Code
HOOYI
HY4008ÿYYXXXJWW G
HY4008ÿYYXXXJWW G
TO-3P-3L
GD
SG
DS
Applications
• Power Management for Inverter Systems.
• Switching application
2.9
eatures
80V/200A
RDS(ON)= mΩ (typ.) @ VGS=10V
Reliable and Rugged
Lead Free and Green DevicesAvailable
(RoHS Compliant)
100% avalanche tested
141225
G : Lead Free Device
Date Code Assembly Material
YYXXX WW
2.9
1736***
800**
80
HY4008
2
Absolute Maximum Ratings
Symbol Parameter Rating Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 80
VGSS Gate-Source Voltage ±25 V
TJ Maximum Junction Temperature 175 °C
TSTG Storage Temperature Range -55 to 175 °C IS Diode Continuous Forward Current TC=25°C 200 A
Mounted on Large Heat Sink
IDM TC=25°C A
TC=25°C 200 ID Continuous Drain Current
TC=100°C 153 A
TC=25°C 397 PD Maximum Power Dissipation
TC=100°C 199 W
RθJC Thermal Resistance-Junction to Case 0.38
RθJA Thermal Resistance-Junction to Ambient 40 °C/W
Avalanche Ratings
EAS Avalanche Energy, Single Pulsed L=0.5mH mJ
Note:
Electrical Characteristics (TC = 25°C Unless Otherwise Noted)
Symbol Parameter Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA - - V
VDS=80V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current
TJ=85°C - - 10 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2.0 3.0 4.0 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100 nA
RDS(ON) Drain-Source On-state Resistance VGS=10V, IDS=100A - 3.5 mΩ
Diode Characteristics
VSD Diode Forward Voltage ISD=100A, VGS=0V - 0.8 1.2 V
trr Reverse Recovery Time - 30 - ns
Qrr Reverse Recovery Charge ISD=100A, dlSD/dt=100A/µs
- 52 - nC
Note:** Drain current is limited by junction temperature*** VD=64V
* Repetitive rating ; pulse width limiited by junction temperature
Pulsed Drain Current *
*
*
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HY4008W/A
-18
HY4008
3
Electrical Characteristics (Cont.) (TC = 25°C Unless Otherwise Noted)
Symbol Parameter Test Conditions
Min. Typ. Max. Unit
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 3.2 - Ω
Ciss Input Capacitance - 7398 -
Coss Output Capacitance - 1029 -
Crss Reverse Transfer Capacitance
VGS=0V, VDS=25V, Frequency=1.0MHz - 650 -
pF
td(ON) Turn-on Delay Time - 28 -
Tr Turn-on Rise Time -
td(OFF) Turn-off Delay Time - 42 -
Tf Turn-off Fall Time
VDD=40V, RG=6 Ω, IDS =100A, VGS=10V,
- 54 -
ns
Gate Charge Characteristics
Qg Total Gate Charge - 195
Qgs Gate-Source Charge - 31 -
Qgd Gate-Drain Charge
VDS=64V, VGS=10V, IDS=100A
- 75 -
nC
Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%.
-
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HY4008W/A
Typical Operating Characteristics
ID -
Dra
in C
urre
nt (A
)
Drain Current
0 20 40 60 80 100 120 140 160 180 2000
30
60
90
120
150
180
210
TC=25oC,V
G=10V
limited by package
Power Dissipation
Pto
t - P
ower
(W)
0 20 40 60 80 100 120 140 160 180 2000
40
120
200
280
360
TC=25oC
0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Nor
mal
ized
Effe
ctiv
e Tr
ansi
ent
1
0.01
0.02
0.05
0.1
0.2
Duty = 0.5
Mounted on minimum padR
θJA : 40 oC/W
Single
4
TC -Case Temperature (°C)TC -Case Temperature (°C)
0.1 1 101
10
100
1000
100 400
Safe Operation Area
VDS - Drain - Source Voltage (V)
ID -
Dra
in C
urre
nt (A
) 100us
10ms
1ms
DC
Rds(on
) Lim
it
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HY4008W/A
440
5
Typical Operating Characteristics (Cont.)
VDS - Drain - Source Voltage (V)
ID -D
rain
Cur
rent
(A)
Output Characteristics
Tj - Junction Temperature (°C)
Gate Threshold Voltage
Nor
mal
ized
Thre
shol
dVo
ltage
VGS - Gate - Source Voltage (V)
RD
S(O
N) -
On
-Res
ista
nce
(mΩ
)
Drain-Source On Resistance
ID - Drain Current (A)
RD
S(O
N) -
On
-Res
ista
nce
(mΩ
)
Gate-Source On Resistance
0 50 100 150 200 250
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.5
VGS=10V
3 4 5 6 7 8 9 100
2
4
6
8
10
12
14IDS=100A
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HY4008W/A
200
0.0 1.0 2.0 3.0 4.0 5.0 6.00
40
804V
5V
4.5V
VGS
= 5.5,6,7,8,9,10V
120
160
240
280
320
-50 -25 0 25 50 75 100 125 150 1750.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6IDS
=250µA
40
6
Typical Operating Characteristics (Cont.)
VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
IS-S
ourc
eC
urre
nt(A
)
Drain-Source On Resistance
Nor
mal
ized
On
Res
ista
nce
Tj - Junction Temperature (°C)
Gate Charge
QG -Gate Charge (nC)
VGS
-Gat
e-so
urce
Volta
ge(V
)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.1
1
10
100
200
Tj=175oC
Tj=25oC
0 80 120 160 2000
1
2
3
4
5
6
7
8
9
10V
DS= 64V
IDS
= 100A
6000
VDS - Drain - Source Voltage (V)
C-C
apac
itanc
e(p
F)
Capacitance
0 8 16 24 32 400
1500
3000
4500
7500
9000
10500
Frequency=1MHz
CrssCoss
Ciss
12000
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HY4008W/A
-50 -25 0 25 50 75 100 125 150 1750.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
RON
@Tj=25oC: 2.9mΩ
VGS
= 10V
IDS
= 100A
7
Avalanche Test Circuit and Waveforms
Avalanche Test Circuit and Waveforms
DUT
0.01Ωtp
VDD
VDSL
IL
RG
EAS
VDD
tAV
IAS
VDS
tpVDSX(SUS)
VDD
RD
DUT
VGS
VDS
RG
tp
td(on) tr td(off) tf
VGS
VDS
90%
10%
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HY4008W/A
HY4008W/A
8 www.hooyi.cc
MIN NOM MAXA 4.90 5.00 5.10A1 2.31 2.41 2.51A2 1.90 2.00 2.10b 1.16 1.21 1.26b2 1.96 2.01 2.06b4 2.96 3.01 3.06c 0.59 0.61 0.66D 20.90 21.00 21.10D1 16.25 16.55 16.85D2 1.05 1.20 1.35E 15.70 15.80 15.90E1 13.10 13.30 13.50E2 4.90 5.00 5.10E3 2.40 2.50 2.60eh 0.05 0.10 0.15L 19.80 19.92 20.10L1 - - 4.30ΦP 3.50 3.60 3.70ΦP1 - - 7.30ΦP2 2.40 2.50 2.60Q 5.60 5.80 6.00SRT 9.80 - 10.20T1T2T3U 6.00 - 6.40θ1 6° 7° 8°θ2 4° 5° 6°θ3 1° - 1.5°θ4 14° 15° 16°
12.80REF
0.50REF
1.65REF8.00REF
SYMBOLmm
5.44BSC
6.15BSC
Package Information
TO-247-3L
HY4008W/A
9 www.hooyi.cc
TO-3P-3L
MIN NOM MAX
A 4.60 4.80 5.00A1 1.40 1.50 1.60A2 1.33 1.38 1.43b 0.80 1.00 1.20b1 2.80 3.00 3.20b2 1.80 2.00 2.20c 0.50 0.60 0.70D 19.75 19.90 20.05D1 13.70 13.90 14.10D2 12.90 REFE 15.40 15.60 15.80E1 13.40 13.60 13.80E2 9.40 9.60 9.80e 5.45 TYPG 4.60 4.80 5.00H 40.30 40.50 40.70H1 23.20 23.40 23.60h 0.05 0.10 0.15
L 7.40 TYPL1 9.00 TYPL2 11.00 TYPL3 1.00 REFP 6.90 7.00 7.10P1 3.20 REFP2 3.50 REFP3 1.40 1.50 1.60R 0.50 REFQ 5.00 REFQ1 12.56 12.76 12.96U 7.8 8 8.2θ1 5° 7° 9°θ2 1° 3° 5°θ3
SYMBOLmm
60°REF
HY4008W/A
10
Classification Profile
Devices Per Unit
Package Type Unit Quantity
TO-247-3L Tube 30
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TO-3P-3L Tube 30
11
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts)
100 °C 150 °C
60-120 seconds
150 °C 200 °C
60-120 seconds
Average ramp-up rate (Tsmax to TP) 3 °C/second max. 3°C/second max.
Liquidous temperature (TL) Time at liquidous (tL)
183 °C 60-150 seconds
217 °C 60-150 seconds
Peak package body Temperature (Tp)*
See Classification Temp in table 1 See Classification Temp in table 2
Time (tP)** within 5°C of the specified classification temperature (Tc)
20** seconds 30** seconds
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Classification Reflow Profiles
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package Thickness
Volume mm3 <350
Volume mm3 350-2000
Volume mm3 >2000
<1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package
Thickness Volume mm3
<350 Volume mm3
≥350 <2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Reliability Test Program
Test item Method Description SOLDERABILITY JESD-22, B102 5 Sec, 245°C HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C TCT JESD-22, A104 500 Cycles, -65°C~150°C
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HY4008W/A
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