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MRF6S18100NR1 MRF6S18100NBR1
1RF Device DataFreescale Semiconductor
RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETs
Design ed for GSM and GSM EDGE base stat ion appl ic at ions with
freq uenc ies from 1800 to 2000 MHz. Suita ble for TDMA, CDMA and
multicarrier amplifier applications.
GSMApplication Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout =
100 Watts, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)Power Gain 14.5 dBDrain Efficiency 49%
GSM EDGE Application
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,Pout = 40 Watts Avg., Full Frequency Band (1805-1880 MHz or1930- 1990 MHz)
Power Gain 15 dBDrain Efficiency 35%Spectral Regrowth @ 400 kHz Offset = -63 dBcSpectral Regrowth @ 600 kHz Offset = -76 dBcEVM 2% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous BandwidthApplications
200C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25C
Derate above 25C
PD 343
1.96
W
W/C
Storage Temperature Range Tstg - 65 to +175 C
Operating Junction Temperature TJ 200 C
Table 2. Thermal Characteristics
Characteristic Symbol Value(1,2)
UnitThermal Resistance, Junction to Case
Case Temperature 80C, 100 CW
Case Temperature 77C, 40 CW
RJC0.51
0.62
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF6S18100NRev. 1, 5/2006
Freescale SemiconductorTechnical Data
MRF6S18100NR1MRF6S18100NBR1
1805-1990 MHz, 100 W, 28 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1TO-270 WB-4
MRF6S18100NR1
CASE 1484-04, STYLE 1
TO-272 WB-4
MRF6S18100NBR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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RF Device DataFreescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1B (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS 1 Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS 500 nAdc
On Characteristics
Gate Threshold Voltage(VDS = 10 Vdc, ID = 330 Adc)
VGS(th) 1.6 2 3 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 900 mAdc, Measured in Functional Test)
VGS(Q) 1.5 2.8 3.5 Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
VDS(on) 0.24 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3.3 Adc)
gfs 5.3 S
Dynamic Characteristics(1)
Reverse Transfer Capacitance
(VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss 1.5 pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W, IDQ = 900 mA, f = 1930-1990 MHz
Power Gain Gps 13 14.5 16 dB
Drain Efficiency D 47 49 %
Input Return Loss IRL -12 -9 dB
Pout @ 1 dB Compression Point P1dB 100 110 W
1. Part internally matched both on input and output.
(continued)
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MRF6S18100NR1 MRF6S18100NBR1
3RF Device DataFreescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted (continued)
Characteristic Symbol Min Typ Max Unit
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 hm system) VDD= 28 Vdc, IDQ= 700 mA, Pout =
40 W Avg., 1805-1880 MHz or 1930-1990 MHz EDGE Modulation
Power Gain Gps 15 dB
Drain Efficiency D 35 %
Error Vector Magnitude EVM 2 % rms
Spectral Regrowth at 400 kHz Offset SR1 -63 dBc
Spectral Regrowth at 600 kHz Offset SR2 -76 dBc
Typical CW Performances (In Freescale GSM Test Fixture, 50 hm system) VDD= 28 Vdc, IDQ= 900 mA, Pout = 100 W,
1805-1880 MHz
Power Gain Gps 14.5 dB
Drain Efficiency D 49 %
Input Return Loss IRL -12 dB
Pout @ 1 dB Compression Point P1dB 110 W
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RF Device DataFreescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
Figure 1. MRF6S18100NR1(NBR1) Test Circuit Schematic 1930-1990 MHz
Z9 0.485x 1.000Microstrip
Z10* 0.590x 0.083Microstrip
Z11* 0.805x 0.083Microstrip
Z13, Z14 0.870x 0.080Microstrip
PCB Taconic TLX8 -0300, 0.030, r = 2.55
*Variable for tuning.
Z1, Z12 0.250x 0.083Microstrip
Z2* 0.450x 0.083Microstrip
Z3* 0.535x 0.083Microstrip
Z4* 0.540x 0.083Microstrip
Z5 0.365x 1.000Microstrip
Z6 1.190x 0.080MicrostripZ7, Z8 0.115x 1.000Microstrip
VBIAS VSUPPLY
RF
OUTPUTRF
INPUT
DUT
C1 C2 C3 C4 C5
R1
Z1 Z2 Z3
C6
Z8
R2Z6
R3
Z7
Z13
Z14
VSUPPLY
C11 C12 C13
C7 C8
Z4 Z5 Z9
C10
Z10 Z11 Z12
C14+
C9
Table 6. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values 1930-1990 MHz
Part Description Part Number Manufacturer
C1 100 nF Chip Capacitor (1206) 1206C104KAT AVX
C2, C3, C6, C10, C11 6.8 pF 600B Chip Capacitors 600B6R8BW ATC
C4, C5, C12, C13 4.7 F Chip Capacitors (1812) C4532X5R1H475MT TDK
C7 0.3 pF 700B Chip Capacitor 700B0R3BW ATC
C8 1.3 pF 600B Chip Capacitor 600B1R3BW ATC
C9 0.5 pF 600B Chip Capacitor 600B0R5BW ATC
C14 470 F, 63 V Electrolytic Capacitor, Radial 13661471 Philips
R1, R2 10 k, 1/4 W Chip Resistors (1206)
R3 10 , 1/4 W Chip Resistor (1206)
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MRF6S18100NR1 MRF6S18100NBR1
5RF Device DataFreescale Semiconductor
Figure 2. MRF6S18100NR1(NBR1) Test Circuit Component Layout 1930- 1990 MHz
MRF6S18100N
CUTOUTAREA
R1
Rev. 0
R2 C1 C2
R3
C6
C7 C8
C14
C3C4 C5
C9
C10
C11 C12 C13
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RF Device DataFreescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
TYPICAL CHARACTERISTICS 1930-1990 MHz
Gps,
POWERGAIN(dB)
IRL,
INPUTR
ETURNLOSS(dB)
f, FREQUENCY (MHz)
131900
20
Gps
VDD = 28 Vdc
IDQ = 900 mA
17 60
50
40
30
2020
IRL
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 100 Watts
30
0
10
20
40
D,
DRAIN
EFFICIENCY(%)
16
15
14
D
1920 1940 1960 1980 2000
Gps,
POWERGAIN(dB)
IRL,
INPUTRETURNLOSS(dB)
f, FREQUENCY (MHz)
131900
20
Gps
VDD = 28 Vdc
IDQ = 900 mA
17 60
50
40
30
2020
IRL
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 40 Watts
30
0
10
20
40
D,
DRAINEFFICIENCY(%)
16
15
14D
1920 1940 1960 1980 2000
Figure 5. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
VDD = 28 Vdc
f = 1960 MHz
1125 mA
IDQ = 1350 mA
10
11
1
16
14
13
12
100
Gps,
PO
WERGAIN(dB)
15
900 mA
665 mA
450 mA
40
2
0
16
12
10
6
4
20 16060 80
Figure 6. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 12 V
28V
IDQ = 900 mA
f = 1960 MHz
Gps,P
OWERGAIN(dB)
24V
20V16V
32V
14
8
100 120 140
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MRF6S18100NR1 MRF6S18100NBR1
7RF Device DataFreescale Semiconductor
TYPICAL CHARACTERISTICS 1930-1990 MHz
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
Figure 8. EVM versus Frequency
100
8
18
1
0
50VDD = 28 Vdc
IDQ = 900 mA
f = 1960 MHz
TC = 30_C
30_C
25_C
85_C
10
16
14
12
10
40
30
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. EVM and Drain Efficiency versus
Output Power
50
60
65
70
75
1920
85
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
f, FREQUENCY (MHz)
Pout= 61 W Avg.
44 W Avg.
20 W Avg.
VDD = 28 Vdc
IDQ = 700 mA
Pout, OUTPUT POWER (WATTS) AVG.
100
4
12V
DD= 28 Vdc
IDQ = 700 mA
f = 1960 MHz
EDGE Modulation
8
6
0
101
2
20
60
40
30
0
10
85_C
Gps
TC = 30_
C
25_C
85_C
75
40
0
Pout, OUTPUT POWER (WATTS)
50
55
60
65
70
20
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
D,
DRAIN
EFFICIENCY(%)
D,
DRAINEFFICIENCY(%)
D
Gps,P
OWERGAIN(dB)
EVM,
ERRORVECT
ORMAGNITUDE(%rms)
20000
5
3
1
1980196019401920
4
2
EVM,
ERRORVECTORMAGNITUDE(%rm
s)
SPECTRALREG
ROWTH@4
00kHz(dBc)
SPECTRALREGROWTH@4
00kHzAND600kH
z(dBc)
25_C
85_C
10 50
EVM
25_C
1940 1960 1980 2000
VDD = 28 Vdc
IDQ = 700 mA
f = 1960 MHz
EDGE Modulation
Pout= 61 W Avg.
44 W Avg.
20 W Avg.
61 W Avg.
44 W Avg. 20 W Avg.
f, FREQUENCY (MHz)
40 60 80 100
VDD = 28 Vdc, IDQ = 700 mA
f = 1960 MHz, EDGE Modulation
85_C
25_C
85
55
0
Pout, OUTPUT POWER (WATTS)
60
70
75
80
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRALREG
ROWTH@6
00kHz(dBc)
20 40 60 80 100
65
SR @ 400 kHz
SR @ 600 kHz
TC = 30_C55
80
1900 2020
45VDD = 28 Vdc, IDQ = 700 mA
f = 1960 MHz, EDGE Modulation
D
TC = 30_C
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RF Device DataFreescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
TYPICAL CHARACTERISTICS
210
1.E+09
90
TJ, JUNCTION TEMPERATURE (C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than 10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
100 110 120 130 140 150 160 170 180
1.E+08
1.E+06
1.E+07
Figure 13. MTTF Factor versus Junction Temperature
MTTFFACTOR(HOURSXAMPS2)
190 200
GSM TEST SIGNAL
Figure 14. EDGE Spectrum
10
20
30
40
50
60
70
80
90
100
200 kHz Span 2 MHzCenter 1.96 GHz
110
400 kHz
600 kHz
400 kHz
600 kHz
(dB)
Reference Power VBW = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
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MRF6S18100NR1 MRF6S18100NBR1
9RF Device DataFreescale Semiconductor
Zo = 5
Zload f = 1900 MHz
f = 2020 MHzZsource
f = 1900 MHz
f = 2020 MHz
VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W
f
MHz
ZsourceW
ZloadW
1900 2.80 - j4.53 1.75 - j3.52
1930 2.71 - j4.27 1.67 - j3.25
1960 2.63 - j4.03 1.59 - j2.99
1990 2.56 - j3.79 1.52 - j2.74
2020 2.51 - j3.57 1.47 - j2.51
Zsource = Test circuit impedance as measured fromgate to ground.
Zload = Test circuit impedance as measuredfrom drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Figure 15. Series Equivalent Source and Load Impedance 1930- 1990 MHz
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RF Device DataFreescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
Figure 16. MRF6S18100NR1(NBR1) Test Circuit Schematic 1805- 1880 MHz
Z9 0.485x 1.000Microstrip
Z10* 0.080x 0.083Microstrip
Z11* 0.340x 0.083Microstrip
Z12* 0.975x 0.083Microstrip
Z14, Z15 0.960x 0.080Microstrip
PCB Taconic TLX8 -0300, 0.030, r = 2.55*Variable for tuning.
Z1, Z13 0.250x 0.083Microstrip
Z2* 0.620x 0.083Microstrip
Z3* 0.715x 0.083Microstrip
Z4* 0.190x 0.083Microstrip
Z5 0.365x 1.000Microstrip
Z6 1.190x 0.080MicrostripZ7, Z8 0.115x 1.000Microstrip
VBIAS VSUPPLY
RF
OUTPUTRF
INPUT
DUT
C1 C2 C3 C4 C5
R1
Z1 Z2 Z3
C6
Z8
R2Z6
R3
Z7
Z14
Z15
VSUPPLY
C14 C15 C16
C7 C8
Z4 Z5 Z9
C13
Z10 Z12 Z13
C17+
C10 C12
Z11
C11C9
Table 7. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values 1805-1880 MHz
Part Description Part Number Manufacturer
C1 100 nF Chip Capacitor (1206) 1206C104KAT AVX
C2, C3, C6, C13, C14 8.2 pF 600B Chip Capacitors 600B8R2BW ATC
C4, C5, C15, C16 4.7 F Chip Capacitors (1812) C4532X5R1H475MT TDK
C7, C8, C11, C12 0.2 pF 700B Chip Capacitors 700B0R2BW ATC
C9 1 pF 600B Chip Capacitor 600B1R0BW ATC
C10 0.5 pF 600B Chip Capacitor 600B0R5BW ATC
C17 470 F, 63 V Electrolytic Capacitor, Radial 13661471 Philips
R1, R2 10 k, 1/4 W Chip Resistor (1206)
R3 10 , 1/4 W Chip Resistor (1206)
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MRF6S18100NR1 MRF6S18100NBR1
11RF Device DataFreescale Semiconductor
Figure 17. MRF6S18100NR1(NBR1) Test Circuit Component Layout 1805- 1880 MHz
MRF6S18100N
CUTOUTAREA
R1
Rev. 0
R2 C1 C2
R3
C6
C7 C8
C17
C3 C4 C5
C10C13
C14 C15 C16
C9 C11 C12
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RF Device DataFreescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
TYPICAL CHARACTERISTICS 1805-1880 MHz
Gps,
PO
WERGAIN(dB)
IRL,
INPUTRETU
RNLOSS(dB)
f, FREQUENCY (MHz)
121800
20
Gps
VDD = 28 Vdc
IDQ = 900 mA
17 60
50
40
30
1880
IRL
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 100 Watts
30
0
10
20
40
D,
DRAINEFF
ICIENCY(%)
16
15
14
D
1810 1820 1830 1840 1850
13
1860 1870
1800 18801810 1820 1830 1840 1850 1860 1870
Gps,
POWERGAIN(dB)
IRL,
INPUTRETURNLOSS(dB)
f, FREQUENCY (MHz)
13 20
Gps
VDD = 28 Vdc
IDQ = 900 mA
16 50
40
30
IRL
Figure 19. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 40 Watts
30
10
20
40
D,
DRAINEFFICIENCY(%)
15
14
D
Figure 20. EVM versus Frequency
f, FREQUENCY (MHz)
Pout= 60 W Avg.
42 W Avg.
25 W Avg.
VDD = 28 Vdc
IDQ = 700 mA
EVM,
ERRORVEC
TORMAGNITUDE(%rms)
19001
6
3
1880186018401800
4
2
5
1820
Figure 21. EVM and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) AVG.
100
4
10VDD = 28 Vdc
IDQ = 700 mA
f = 1840 MHz
EDGE Modulation
8
6
0
101
2
20
50
40
30
0
10 D,
DRAINEFFICIENCY(%)
EVM,
ERRORVEC
TORMAGNITUDE(%rms)
TC = 25_C
D
EVM
10
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MRF6S18100NR1 MRF6S18100NBR1
13RF Device DataFreescale Semiconductor
TYPICAL CHARACTERISTICS 1805-1880 MHZ
45
60
65
70
75
1780
85
Figure 22. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
SPECTRALREGROWTH@400kHzAND600kHz(dBc)
1800 1820 1840 1860
55
1880 1900 1920
75
45
0Pout, OUTPUT POWER (WATTS)
50
55
60
65
70
Figure 23. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRALREGROWTH@4
00kHz(dBc)
20 40 60 80
TC = 25_C
85
60
0Pout, OUTPUT POWER (WATTS)
70
75
80
20
Figure 24. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRALREGROWTH@6
00kHz(dBc)
40 60 80
65
f, FREQUENCY (MHz)
50
80
VDD = 28 Vdc
IDQ = 700 mAf = 1960 MHz
Pout= 60 W Avg.
42 W Avg.
25 W Avg.
60 W Avg.
25 W Avg.
42 W Avg.
SR @ 400 kHz
SR @ 600 kHz
VDD = 28 Vdc, IDQ = 700 mA
f = 1840 MHz, EDGE ModulationVDD = 28 Vdc, IDQ = 700 mA
f = 1840 MHz, EDGE Modulation
TC = 25_C
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RF Device DataFreescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
Zo = 5
Zload
Zsource
f = 1900 MHz
f = 1780 MHz
f = 1780 MHz
f = 1900 MHz
VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W
f
MHz
ZsourceW
ZloadW
1780 1.96 - j4.09 1.94 - j2.90
1804 1.90 - j3.86 1.88 - j2.67
1840 1.82 - j3.53 1.80 - j2.42
1880 1.76 - j3.16 1.73 - j1.99
1900 1.72 - j2.97 1.70 - j1.82
Zsource = Test circuit impedance as measured fromgate to ground.
Zload = Test circuit impedance as measuredfrom drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Figure 25. Series Equivalent Source and Load Impedance 1805- 1880 MHz
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MRF6S18100NR1 MRF6S18100NBR1
15RF Device DataFreescale Semiconductor
NOTES
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RF Device DataFreescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
PACKAGE DIMENSIONS
CASE 1486-03ISSUE C
DATUM
PLANE
BOTTOM VIEW
A1
2X
D1
E3
E1
D3
E4
A2
PIN 5
NOTE 8
AB
C
H
DRAIN LEAD
D
AMaaa C
4X
b1
2X
D2NOTES:
1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.3. DATUM PLANE H IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEADWHERE THE LEAD EXITS THE PLASTIC BODY ATTHE TOP OF THE PARTING LINE.
4. DIMENSIONS D" AND E1" DO NOT INCLUDEMOLD PROTRUSION. ALLOWABLE PROTRUSIONIS .006 PER SIDE. DIMENSIONSD" AND E1" DOINCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE H .
5. DIMENSIONb1" DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE .005 TOTAL IN EXCESSOF THE b1" DIMENSION AT MAXIMUM MATERIALCONDITION.
6. DATUMS A AND B TO BE DETERMINED ATDATUM PLANE H.
7. DIMENSION A2 APPLIES WITHIN ZONE J" ON LY.8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
c1
FZONE J
E22X
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.100 .104 2.54 2.64
INCHES
A1 .039 .043 0.99 1.09A2 .040 .042 1.02 1.07D .712 .720 18.08 18.29
D1 .688 .692 17.48 17.58D2 .011 .019 0.28 0.48D3 .600 15.24 E .551 .559 14 14.2
E1 .353 .357 8.97 9.07E2 .132 .140 3.35 3.56E3 .124 .132 3.15 3.35E4 .270 6.86
F
b1 .164 .170 4.17 4.32
c1 .007 .011 0.18 0.28e
.025 BSC
.106 BSC
0.64 BSC
2.69 BSC
1
STYLE 1:PIN 1. DRAIN
2. DRAIN3. GATE4. GATE5. SOURCE
aaa .004 0.10
GATE LEAD
4X
e
2X
E
SEATING
PLANE
4
23
NOTE 7
E5
E5
E5 .346 .350 8.79 8.89
TO-270 WB- 4MRF6S18100NR1
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MRF6S18100NR1 MRF6S18100NBR1
17RF Device DataFreescale Semiconductor
7/29/2019 MRF6S18100N_pwrmosfet
18/2018
RF Device DataFreescale Semiconductor
MRF6S18100NR1 MRF6S18100NBR1
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MRF6S18100NR1 MRF6S18100NBR1
19RF Device DataFreescale Semiconductor
7/29/2019 MRF6S18100N_pwrmosfet
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MRF6S18100NR1 MRF6S18100NBR1
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