IRF9Z24NHEXFET® Power MOSFET
PD -9.1484B
Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of applications.
The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220contribute to its wide acceptance throughout theindustry.
Parameter Max. UnitsID @ TC = 25°C Continuous Drain Current, VGS @ -10V -12ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -8.5 AIDM Pulsed Drain Current -48PD @TC = 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°CVGS Gate-to-Source Voltage ± 20 VEAS Single Pulse Avalanche Energy 96 mJIAR Avalanche Current -7.2 AEAR Repetitive Avalanche Energy 4.5 mJdv/dt Peak Diode Recovery dv/dt -5.0 V/nsTJ Operating Junction and -55 to + 175TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. UnitsRθJC Junction-to-Case ––– 3.3RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/WRθJA Junction-to-Ambient ––– 62
Thermal Resistance
VDSS = -55V
RDS(on) = 0.175Ω
ID = -12A
TO-220AB
l Advanced Process Technologyl Dynamic dv/dt Ratingl 175°C Operating Temperaturel Fast Switchingl P-Channell Fully Avalanche RatedDescription
8/27/97
S
D
G
IRF9Z24N
Parameter Min. Typ. Max. Units ConditionsIS Continuous Source Current MOSFET symbol
(Body Diode)––– –––
showing theISM Pulsed Source Current integral reverse
(Body Diode) ––– –––
p-n junction diode.VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = -7.2AQrr Reverse RecoveryCharge ––– 84 130 µC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Parameter Min. Typ. Max. Units ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mARDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.175 Ω VGS = -10V, ID = -7.2A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µAgfs Forward Transconductance 2.5 ––– ––– S VDS = -25V, ID = -7.2A
––– ––– -25µA
VDS = -55V, VGS = 0V––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20VGate-to-Source Reverse Leakage ––– ––– -100
nAVGS = -20V
Qg Total Gate Charge ––– ––– 19 ID = -7.2AQgs Gate-to-Source Charge ––– ––– 5.1 nC VDS = -44VQgd Gate-to-Drain ("Miller") Charge ––– ––– 10 VGS = -10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = -28Vtr Rise Time ––– 55 ––– ID = -7.2Atd(off) Turn-Off Delay Time ––– 23 ––– RG = 24Ωtf Fall Time ––– 37 ––– RD = 3.7Ω, See Fig. 10
Between lead,––– –––
6mm (0.25in.)from packageand center of die contact
Ciss Input Capacitance ––– 350 ––– VGS = 0VCoss Output Capacitance ––– 170 ––– pF VDS = -25VCrss Reverse Transfer Capacitance ––– 92 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
LD Internal Drain Inductance
LS Internal Source Inductance ––– –––
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
ISD ≤ -7.2A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 3.7mH RG = 25Ω, IAS = -7.2A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Source-Drain Ratings and Characteristics
A
S
D
G
-12
-48
IRF9Z24N
Fig 4. Normalized On-ResistanceVs. Temperature
Fig 2. Typical Output Characteristics,Fig 1. Typical Output Characteristics,
Fig 3. Typical Transfer Characteristics
1
1 0
1 0 0
0 . 1 1 1 0 1 0 0
D
D S
20µs PULS E W IDTH T = 25°C
A
-I
, D
rain
-to-
Sou
rce
Cur
rent
(A
)
-V , Drain-to-Source Voltage (V)
VGS TOP - 15V - 10V - 8 .0V - 7 .0V - 6 .0V - 5 .5V - 5 .0V BOTT OM - 4. 5V
-4.5V
c
1
10
100
0.1 1 10 100D
D S
A-I
,
Dra
in-t
o-S
ourc
e C
urr
ent
(A
)
-V , Dra in-to-Source Voltage (V )
VGS TOP - 15V - 10V - 8 .0V - 7 .0V - 6 .0V - 5 .5V - 5 .0V BOTT OM - 4. 5V
-4.5V 20µs PULSE W IDTH T = 175°CC
1
1 0
1 0 0
4 5 6 7 8 9 1 0
T = 25°CJ
G S
D
A
-I
, D
rain
-to-
So
urce
Cur
rent
(A
)
-V , Ga te-to-So urce Vol tage (V )
V = -2 5V 20µs P ULS E W IDT H
DS
T = 175°CJ
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
JT , Junction Temperature (°C)
R
,
Dra
in-t
o-S
ourc
e O
n R
esi
stan
ceD
S(o
n)(N
orm
aliz
ed)
A V = -10V GS
I = -12AD
J
J
IRF9Z24N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 7. Typical Source-Drain DiodeForward Voltage
0
4
8
12
16
20
0 5 10 15 20 25
GG
S
A
-V
,
Ga
te-t
o-S
ourc
e V
olta
ge (
V)
Q , Tota l Gate Charge (nC)
FO R TEST CIRCUIT SEE F IGURE 13
I = -7.2A
V = -44V V = -28V
D
DS
DS
0 . 1
1
1 0
1 0 0
0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8
T = 25°C
T = 150°C
J
J
V = 0V GS
S D
SD
A
-I
, R
eve
rse
Dra
in C
urre
nt (
A)
-V , Source-to-Drain Voltage (V )
1
10
100
1 10 100
O PERATIO N IN THIS AREA LIM ITED BY RD S(o n)
10m sA
-I
, D
rain
Cur
rent
(A
)
-V , Dra in-to-Source Voltage (V )DS
D
1 0µs
100µ s
1m s
T = 25°C T = 175°C Single Pu lse
CJ
0
100
200
300
400
500
600
700
1 10 100
C,
Ca
paci
tanc
e (p
F)
D SV , Drain-to-Source Voltage (V)
A
V = 0V , f = 1MH zC = C + C , C SHORTEDC = CC = C + C
GSiss gs g d dsrss g doss ds gd
C is s
C o s s
C rs s
IRF9Z24N
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.Case Temperature
VDS
-10VPulse Width ≤ 1 µsDuty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+-
VDS
90%
10%
VGS
td(on) tr td(off) tf
0
3
6
9
1 2
2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5
CT , C ase Temperature (°C)
A
-I
, Dra
in C
urre
nt (
Am
ps)
D
0 . 0 1
0 . 1
1
1 0
0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1
t , R ectan gular Pulse D uratio n (sec)1
thJC
D = 0 .5 0
0 .0 10 .0 2
0 .0 5
0 .1 0
0 .2 0
S IN G LE P U L S E(T H E R M A L R E S P O N S E )
A
Th
erm
al R
esp
on
se (
Z
)
P
t 2
1t
DM
Notes : 1. D uty fac tor D = t / t
2. P ea k T = P x Z + T
1 2
J DM th JC C
IRF9Z24N
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche EnergyVs. Drain Current
QG
QGS QGD
VG
Charge
-10V
D.U.T.VDS
IDIG
-3mA
VGS
.3µF
50KΩ
.2µF12V
Current RegulatorSame Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V (BR)DSS
I AS
R G
IA S
0 .0 1Ωtp
D .U .T
LV D S
VD D
D R IV E RA
15V
-20V
0
50
100
150
200
250
25 50 75 100 125 150 175
J
E
,
Sin
gle
Pu
lse
Ava
lanc
he E
nerg
y (m
J)A
SA
Starting T , Junction Temperature (°C)
ITO P -2.9A -5.1AB OTTO M -7.2A
D
IRF9Z24NPeak Diode Recovery dv/dt Test Circuit
P.W.Period
di/dt
Diode Recoverydv/dt
Ripple ≤ 5%
Body Diode Forward DropRe-AppliedVoltage
ReverseRecoveryCurrent
Body Diode ForwardCurrent
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.Period
+
-
+
+
+-
-
-
RG
VDD
• dv/dt controlled by RG• ISD controlled by Duty Factor "D"• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
IRF9Z24N
L E A D A S S IG N M E N T S 1 - G A T E 2 - D R A I N 3 - S O U R C E 4 - D R A I N
- B -
1 .3 2 (. 0 5 2 )1 .2 2 (. 0 4 8 )
3 X0 . 5 5 (. 0 2 2 )0 . 4 6 (. 0 1 8 )
2 .9 2 (. 1 1 5 )2 .6 4 (. 1 0 4 )
4 . 6 9 ( .1 8 5 )4 . 2 0 ( .1 6 5 )
3 X0 . 9 3 ( .0 3 7 )0 . 6 9 ( .0 2 7 )
4 . 0 6 (. 1 6 0 )3 . 5 5 (. 1 4 0 )
1 . 1 5 ( .0 4 5 ) M IN
6 . 4 7 (. 2 5 5 )6 . 1 0 (. 2 4 0 )
3 . 7 8 (. 1 4 9 )3 . 5 4 (. 1 3 9 )
- A -
1 0 . 5 4 (. 4 1 5 )1 0 . 2 9 (. 4 0 5 )2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 5 . 2 4 ( .6 0 0 )1 4 . 8 4 ( .5 8 4 )
1 4 . 0 9 (.5 5 5 )1 3 . 4 7 (.5 3 0 )
3 X1 .4 0 (. 0 5 5 )1 .1 5 (. 0 4 5 )
2 . 5 4 ( .1 0 0 )
2 X
0 .3 6 ( . 0 1 4 ) M B A M
4
1 2 3
N O T E S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B . 2 C O N T R O L L I N G D IM E N S IO N : I N C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
PART NU M BERIN TER NATION AL R EC TIF IER LO GO
EXAM PLE : THIS IS AN IRF1010 W ITH ASSEMBLY LO T CO DE 9B1M
ASSEM BLY LO T CO DE
D ATE C OD E (YYW W )YY = YEARW W = W EEK
9246IR F1010
9B 1M
A
Part Marking InformationTO-220AB
Package OutlineTO-220AB OutlineDimensions are shown in millimeters (inches)
PART NU M BERIN TER NATION AL R EC TIF IER LO GO
EXAM PLE : THIS IS AN IRF1010 W ITH ASSEMBLY LO T CO DE 9B1M
ASSEM BLY LO T CO DE
D ATE C OD E (YYW W )YY = YEARW W = W EEK
9246IR F1010
9B 1M
A
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