TRAD, Tests & Radiations ESA/CNES March 10 2015
Heavy Ion SEE Testing of M65609E SRAM
memory from Atmel
Presented by Pierre GARCIA
Work performed by Lionel GOUYET , Benjamin VANDEVELDE , Alexandre ROUSSET, Athina VAROTSOU
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Outline
The project Parts, beam description, test system Results
Conclusions
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55 01010101
51 01010001
Read Data Expected Data
SEU (1 error in the read data)
55 01010101
71 01110001
MBU (more than 1 error in the read data)
Error correction
More critical
Context MBU or not MBU? That is the question.
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Part tested – M65609E – Atmel
Part of the tested lot Delidded part Die marking
PART IDENTIFICATION Type : M65609E Manufacturer : Atmel Function : Rad. Hard. 128k x 8, 3.3-Volt SRAM
PARTS PROCUREMENT INFORMATIONS Packaging : FP-32 Sample size: 10 irradiated samples
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IRRADIATION BEAM CHARACTERISTICS
Heavy Ions used : High LET cocktail : Xe High range cocktail : Kr, Ni, Ar, Ne and C
Flux : 465 cm-2.s-1 up to 7600 cm-2.s-1
Irradiation facility: U.C.L.
Irradiation facility: P.S.I. IRRADIATION BEAM CHARACTERISTICS
Proton Energy : 230 MeV, 200 MeV, 151 MeV, 101 MeV and 75 MeV
Flux : 4,46 106 cm-2.s-1 up to 3.14 107cm-2.s-1
SEE irradiation Facilities
Flux set for High LET ions
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Same Test bench for proton and Heavy ions irradiation
Proton irradiation: No active part in the beam field
Heavy ions irradiation: DUT the closest possible control
board
Test Bench - Hardware
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Event classification: Transient (error type 1)
Upset (error type 2 or 3)
Stuck bit (error type 4) Difference between SEU and MBU
Test Bench - Detection method
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MBU: One or multiple particles shots in the same data ?
55 01010101
51 01010001
Read Data Expected Data
SEU (1 error in the read data)
55 01010101
71 01110001
MBU (more than 1 error in the read data)
Real MBU Multiple SEU
For the test bench:
In reality:
To estimate real MBU: Flux or mapping
Results - Post treatment
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Bit cell of word 1
Bit cell of word 2
Divide a word in several physical area: Example of a interleaved of 2 bytes on a memory:
Results - Post treatment
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A Post treatment has been performed on the Heavy ions and Protons results
with the physical distribution of memory cells from Atmel
Real MBU
Divide a word in several physical area:
0101 0011 Bits are adjacent
Multiple SEU
0001 1101 Bits are not adjacent
Bit cell of word 1
Bit cell of word 2
SEU
Results - Post treatment
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LET 67.7MeV.cm2.mg-1 Heavy ion beam.
Representation of events on the memory plan:
Results - Post treatment
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MBU Cross Section for M65609E
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
0 10 20 30 40 50 60 70 80
LET (MeV.cm².mg-1)
Cro
ss S
ectio
n (c
m²)
Part 70 Part 74
Results - Post treatment
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M65609E - MBU cross section
1.00E-12
1.00E-11
1.00E-10
1.00E-09
1.00E-08
0 50 100 150 200 250
Energy (MeV)
Cro
ss S
ectio
n (C
m²)
Part 79Part 78
Results - Post treatment
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SEU Cross Section for M65609E
1.00E-08
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
1.00E+00
0 10 20 30 40 50 60 70 80
LET (MeV.cm².mg-1)
Cro
ss S
ectio
n (c
m²)
Part 70 Part 74
Results - Post treatment
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M65609E - SEU cross section
1.00E-10
1.00E-09
1.00E-08
1.00E-07
1.00E-06
0 50 100 150 200 250
Energy (MeV)
Cro
ss S
ectio
n (C
m²)
Part 79Part 78Part 72Part 71
Results - Post treatment
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Conclusion
Post treatment has been performed
Real MBU observed with Heavy ions and Protons
Results available in “Single Event Upsets and Multiple Bit Upsets observed on 1Mbit SRAM”
Marc Poizat, Christian Poivey, Alexandre Rousset, Benjamin Vandevelde, Lionel Gouyet, Athina Varotsou
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Thank you for your attention
Any question ?
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Test Bench - Hardware
Hardware designed around an FPGA witch communicate
with a Labview software
Signals buffered and multiplexed depending the
tested Unit Under Test (UUT)
DUT can be remote with cables or plugged as close
as possible
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