Corial 200RLCorial 200RL
COSMA Software withCOSMA Software with:: Edit menu for process recipe edition,Edit menu for process recipe edition,
Adjust menu for process optimizing,Adjust menu for process optimizing,
Maintenance menus for complete equipment Maintenance menus for complete equipment
control via internet with VPN (Virtual Private control via internet with VPN (Virtual Private
Network).Network).CORS Software forCORS Software for:: Data reprocessing (Measures and data Data reprocessing (Measures and data
comparison).comparison).
Equipment Control & SoftwareEquipment Control & Software
A Tool Organized in A Tool Organized in Successive LevelsSuccessive Levels
ActionActionss
ConstructorConstructor
LotsLotsActionsActions
ProcessProcess
Closed-loopClosed-loop
Server for Server for GUIGUI
COSMA COSMA SupervisorSupervisor
Embedded Embedded control PUcontrol PU
Embedded Embedded control control functionfunction
COSMA COSMA ControllerController
Process Process ControllerController
Device Device ControllersControllers
Physical Physical devicesdevices
OperatorOperator
Remote GUIRemote GUI
PC UserPC User
MonitorinMonitoringg
MonitorinMonitoringg
MonitorinMonitoringg
Diagram ModesDiagram Modes
Stand-byStand-byModeMode
Step by stepStep by step
ModeMode
ProductionProductionModeMode
OptimizationOptimizationModeMode
ConstructorConstructorModeMode
Shut downShut downModeMode
NormalNormal
ErrorsErrors
OperatorOperator
ProductionProduction
MaintenanceMaintenance
ConstructorConstructor
A Communicant ToolA Communicant Tool
COSMA COSMA SupervisorSupervisor
COSMACOSMAGUIGUI
Customer Customer Ethernet NetworkEthernet Network
Process Process Control Unit Control Unit
(1)(1)
Process Process Control Unit Control Unit
(2)(2)
Device Device Control (1)Control (1)
EthernetEthernet
Device Device Control (2)Control (2)
EthernetEthernet
WANWAN
VPNVPNADSLADSLFix IPFix IP
FirewalFirewalll
DedicatedDedicatedEthernet Ethernet networknetwork
SystemSystem
Load-lockLoad-lock
RF GeneratorRF Generator
Electronic ControlElectronic Control
TMP ControlTMP Control
RIE ReactorRIE Reactor
HT/B
T P
ow
er
Supp
lies
HT/B
T P
ow
er
Supp
lies
Pumping SystemPumping System
TMPTMP
TVTV
ReactorReactor
Dry PumpDry PumpADP 122ADP 122
Load-L
ock
Valv
e
Load-lockLoad-lock
Gate valve for Gate valve for quick reactor quick reactor venting and venting and
cleaningcleaning
Reactive Ion Etching Reactive Ion Etching source designed to operate source designed to operate with a wide working pressure range (with a wide working pressure range (10 to 200 10 to 200 mTmT),),
The large cathode sizeThe large cathode size enables batch etching of up enables batch etching of up to three 3” wafers or up to one Ø150 mm wafer,to three 3” wafers or up to one Ø150 mm wafer,
ShuttlesShuttles for loading and to enable etching of for loading and to enable etching of different sizes and numbers of wafers,different sizes and numbers of wafers,
Helium assisted heat exchangeHelium assisted heat exchange between cathode, between cathode, shuttle with mechanical clamping to maintain shuttle with mechanical clamping to maintain shuttle temperature belowshuttle temperature below 50°C50°C during etching. during etching.
Reactor FeaturesReactor Features
LoadingLoading
CathodeCathode
Loading toolLoading tool ShuttleShuttle
LoadingLoading
Loading toolLoading tool
CathodeCathodeShuttleShuttle
ClampingClamping
Loading toolLoading tool
CathodeCathodeShuttleShuttle
CoolingCooling
Loading toolLoading tool
CathodeCathodeShuttleShuttle
HeliumHelium
EtchingEtching
Loading toolLoading tool
CathodeCathodeShuttleShuttle
HeliumHelium
PLASMAPLASMA
End of EtchingEnd of Etching
Loading toolLoading tool
CathodeCathodeShuttleShuttle
UnloadingUnloading
CathodeCathodeLoading toolLoading tool ShuttleShuttle
UnloadingUnloading
Loading toolLoading tool ShuttleShuttle
CathodeCathode
Aluminum etching requirementsAluminum etching requirements::
High etch rates and anisotropic profiles,High etch rates and anisotropic profiles,
Aluminium etch rate : 250 nm/min,Aluminium etch rate : 250 nm/min,
After the aluminium etching phase, a passivation step After the aluminium etching phase, a passivation step avoids corrosion due to AlCl3 trapped on the side walls avoids corrosion due to AlCl3 trapped on the side walls during aluminium etching,during aluminium etching,
No damage after a week long moisture exposure test at No damage after a week long moisture exposure test at atmospheric pressure.atmospheric pressure.
ALUMINUM ETCHINGALUMINUM ETCHING
Process SpecificationsProcess SpecificationsFor Aluminum EtchingFor Aluminum Etching
Guaranteed Process Guaranteed Process ResultsResults
PROCESSPROCESSEtch RateEtch Rate
(nm/min)(nm/min)
Uniformity Uniformity of Etch of Etch RateRate
SelectivitSelectivity against y against
PRPRProfileProfile
RIE of Al with RIE of Al with PR maskPR mask 250250 ±5%±5% 2.52.5 85° to 90°85° to 90°
RIE of RIE of Al/2%Cu with Al/2%Cu with
PR maskPR mask200200 ±5%±5% 22 85° to 90°85° to 90°
End of etching can be monitoredEnd of etching can be monitored using ausing a CCD camera with CCD camera with magnification > 120 Xmagnification > 120 X and a and a laser beam diameter ≤ 20 laser beam diameter ≤ 20 mm. The . The laser spot is located with a laser spot is located with a precise XY stageprecise XY stage on the area to etch. on the area to etch. When the substrate is exposed the system detects automatically When the substrate is exposed the system detects automatically the change in reflectivity.the change in reflectivity.
Precise MonitoringPrecise Monitoring
PhotodiodePhotodiode
Laser Endpoint DetectionLaser Endpoint Detection
Laser beamLaser beam
PhotoresistPhotoresist
QuartzQuartz
Reflected beamReflected beam
When laser beam reaches the substrate, the signal When laser beam reaches the substrate, the signal level drops. This change enables automatic endpoint level drops. This change enables automatic endpoint
detection.detection.
Trimming Specifications:Trimming Specifications:
Uniformity of etching on Uniformity of etching on 4” wafers ≤ ± 0,5%.4” wafers ≤ ± 0,5%.
Uniformity of shift in Uniformity of shift in frequency on packaged frequency on packaged devices: ≤ ± 5 KHz for a devices: ≤ ± 5 KHz for a 120 KHz. Shift.120 KHz. Shift.
TRIMMINGTRIMMING
QuickTime™ et undécompresseur TIFF (LZW)
sont requis pour visionner cette image.
Process accuracy:Process accuracy:
Low etch etch rate,Low etch etch rate,
Linear relationship Linear relationship between RF power and between RF power and etch rate.etch rate.
Reactive Ion EtchingReactive Ion Etching source which produces a uniform plasma source which produces a uniform plasma in a wide range of working pressure (10 to 200 mT) for fast in a wide range of working pressure (10 to 200 mT) for fast etching of Al and Al/2%Cu on up to etching of Al and Al/2%Cu on up to 150 mm wafers,150 mm wafers,
Helium assisted heat exchangeHelium assisted heat exchange to control to control shuttleshuttle temperature,temperature,
Al Plasma passivation step provided with the process,Al Plasma passivation step provided with the process,
Pumping system with Pumping system with gate valve gate valve forfor quick reactor quick reactor maintenancemaintenance,,
Laser endpointLaser endpoint with with high magnificationhigh magnification and and small laser spotsmall laser spot (25 µm) for precise process monitoring,(25 µm) for precise process monitoring,
Possibility of Possibility of SAW devices trimmingSAW devices trimming using a dedicated shuttle. using a dedicated shuttle.
Recap of Corial 200RL FeaturesRecap of Corial 200RL Features
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