RD50 Recent Results
Development of radiation hard sensors for SLHC
Anna Macchiolo*Anna Macchiolo***Max-Planck-Institut fMax-Planck-Institut füür Physikr Physik
on behalf of the RD50 Collaboration
The RD50 Collaboration: scope and methods Defect characterization Results on irradiated detectors Planar pixel productions 3D sensor developments
OUTLINEOUTLINE
http://www.cern.ch/rd50http://www.cern.ch/rd50
RD50
8 North-American institutesCanada (Montreal), USA (BNL, Fermilab, New Mexico, Purdue,
Rochester, Santa Cruz, Syracuse)
1 Middle East instituteIsrael (Tel Aviv)
247 Members from 47 Institutes
Detailed member list: http://cern.ch/rd50
Development of Radiation Hard Semiconductor Devices for High Luminosity Colliders
38 European institutes Belarus (Minsk), Belgium (Louvain), Czech Republic (Prague (3x)), Finland (Helsinki, Lappeenranta), Germany (Dortmund,
Erfurt, Freiburg, Hamburg, Karlsruhe, Munich), Italy (Bari, Florence, Padova, Perugia, Pisa, Trento), Lithuania (Vilnius),
Netherlands (NIKHEF), Norway (Oslo (2x)), Poland (Warsaw(2x)), Romania (Bucharest (2x)), Russia (Moscow,
St.Petersburg), Slovenia (Ljubljana), Spain (Barcelona, Valencia), Switzerland (CERN, PSI), Ukraine (Kiev),
United Kingdom (Glasgow, Lancaster, Liverpool)
RD50: Nov.2001 collaboration formed ; June 2002 approved by CERN
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -3-
RD50
1013 5 1014 5 1015 5 1016
eq [cm-2]
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signa
l [el
ectro
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n-in-n (FZ), 285m, 600V, 23 GeV p p-in-n (FZ), 300m, 500V, 23GeV pp-in-n (FZ), 300m, 500V, neutrons
p-in-n-FZ (500V)n-in-n FZ (600V)
M.Moll - 08/2008
References:
[1] p/n-FZ, 300m, (-30oC, 25ns), strip [Casse 2008][2] n/n-FZ, 285m, (-10oC, 40ns), pixel [Rohe et al. 2005]
FZ Silicon Strip and Pixel Sensors
strip sensorspixel sensors
Motivation:
Signal degradation for LHC Silicon Sensors
Strip sensors: max. cumulated fluence for LHC
Pixel sensors: max. cumulated fluence for LHC
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -4-
RD50
1013 5 1014 5 1015 5 1016
eq [cm-2]
5000
10000
15000
20000
25000
signa
l [el
ectro
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n-in-n (FZ), 285m, 600V, 23 GeV p p-in-n (FZ), 300m, 500V, 23GeV pp-in-n (FZ), 300m, 500V, neutrons
p-in-n-FZ (500V)n-in-n FZ (600V)
M.Moll - 08/2008
References:
[1] p/n-FZ, 300m, (-30oC, 25ns), strip [Casse 2008][2] n/n-FZ, 285m, (-10oC, 40ns), pixel [Rohe et al. 2005]
FZ Silicon Strip and Pixel Sensors
strip sensorspixel sensors
Motivation:
Signal degradation for LHC Silicon Sensors
Strip sensors: max. cumulated fluence for LHC and SLHC
Pixel sensors: max. cumulated fluence for LHC and SLHC
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -5-
RD50 Material Engineering -- Defect Engineering of Silicon
Understanding radiation damage• Macroscopic effects and Microscopic defects• Simulation of defect properties & kinetics• Irradiation with different particles & energies
Oxygen rich Silicon• DOFZ, Cz, MCZ, EPI
Oxygen dimer & hydrogen enriched Silicon Influence of processing technology
Material Engineering-New Materials (work concluded) Silicon Carbide (SiC), Gallium Nitride (GaN)
Device Engineering (New Detector Designs) p-type silicon detectors (n-in-p) thin detectors 3D detectors Simulation of highly irradiated detectors Semi 3D detectors and Stripixels Cost effective detectors
Development of test equipment and measurement recommendations
RD50 approaches to develop radiation harder tracking detectors
Radiation Damage to Sensors:
Bulk damage due to NIEL Change of effective doping concentration Increase of leakage current Increase of charge carrier trapping
Surface damage due to IEL (accumulation of positive charge in oxide
& interface charges)
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -6-
RD50 Silicon Material under Investigation
DOFZ silicon - Enriched with oxygen on wafer level, inhomogeneous distribution of oxygen CZ/MCZ silicon - high Oi (oxygen) and O2i (oxygen dimer) concentration (homogeneous)
- formation of shallow Thermal Donors possible Epi silicon - high Oi , O2i content due to out-diffusion from the CZ substrate (inhomogeneous)
- thin layers: high doping possible (low starting resistivity) Epi-Do silicon - as EPI, however additional Oi diffused reaching homogeneous Oi content
standardfor
particledetectors
used for LHC Pixel
detectors
“new”silicon
material
Material Thicknessm]
Symbol (cm)
[Oi] (cm-3)
Standard FZ (n- and p-type) 50,100,150300
FZ 1–3010 3 < 51016
Diffusion oxygenated FZ (n- and p-type) 300 DOFZ 1–710 3 ~ 1–21017
Magnetic Czochralski Si, Okmetic, Finland (n- and p-type)
100, 300 MCz ~ 110 3 ~ 51017
Czochralski Si, Sumitomo, Japan (n-type)
300 Cz ~ 110 3 ~ 8-91017
Epitaxial layers on Cz-substrates, ITME, Poland (n- and p-type)
25, 50, 75,100,150
EPI n: 50 – 500 p: 50-1000
< 11017
Diffusion oxyg. Epitaxial layers on CZ 75 EPI–DO 50 – 100 ~ 61017
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -7-
RD50 Defect Characterization - WODEAN
WODEAN project (initiated in 2006, 10 RD50 institutes, guided by G.Lindstroem, Hamburg)
Aim: Identify defects responsible for Trapping, Leakage Current, Change of Neff
Method: Defect Analysis on identical samples performed with the various tools available inside the RD50 network (DLTS, TSC, TCT, etc.)
~ 240 samples irradiated with protons and neutrons
Example: identification of defects responsible for long term / reverse annealing
Cluster related defects H(116K), H(140K) and H(152K) (not present after -irradiation) observed in neutron irradiated n-type Si diodes during 80oC annealing
Concentrations are increasing with annealing time contribute to long term/ reverse annealing
Neff can be calculated from measured defect concentrations with TSC including BD and E(30K) defects
Comparison with Neff from CV-measurements shows a very good compatibility
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -8-
RD50
I.Pintilie, NSS, 21 October 2008, Dresden
Summary – defects with strong impact on the device properties at operating temperature
Point defects
EiBD = Ec – 0.225 eV
nBD =2.310-14 cm2
EiI = Ec – 0.545 eV
nI =2.310-14 cm2
pI =2.310-14 cm2
Cluster related centers
Ei116K = Ev + 0.33eV
p116K =410-14 cm2
Ei140K = Ev + 0.36eV
p140K =2.510-15 cm2
Ei152K = Ev + 0.42eV
p152K =2.310-14 cm2
Ei30K = Ec - 0.1eV
n30K =2.310-14 cm2
V2 -/0
VO -/0 P 0/+
H152K 0/-
H140K 0/-
H116K 0/-CiOi
+/0
BD 0/++
Ip 0/-
E30K 0/+
B 0/-
0 charged at RT
+/- charged at RT
Point defects extended defects
Reverse annealing
(neg. charge)
leakage current+ neg. charge
(current after irradiation)
positive charge (higher introduction after
proton irradiation than after neutron irradiation)
positive charge (high concentration in oxygen
rich material)
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -9-
RD50 Silicon materials for Tracking Sensors Signal comparison for various Silicon sensors Note: Measured partly
under different conditions! Lines to guide the eye
(no modeling)!
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sign
al [e
lect
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]
SiC, n-type, 55 m, 900V, neutrons [3]
SiC
p-in-n (EPI), 150 m [7,8]p-in-n (EPI), 75m [6]
75m n-EPI
150m n-EPI
n-in-p (FZ), 300m, 500V, 23GeV p [1]n-in-p (FZ), 300m, 500V, neutrons [1]n-in-p (FZ), 300m, 500V, 26MeV p [1]n-in-p (FZ), 300m, 800V, 23GeV p [1]n-in-p (FZ), 300m, 800V, neutrons [1]n-in-p (FZ), 300m, 800V, 26MeV p [1]
n-in-p-Fz (500V)
n-in-p-Fz (800V)
p-in-n (FZ), 300m, 500V, 23GeV p [1]p-in-n (FZ), 300m, 500V, neutrons [1]n-FZ(500V)
M.Moll - 08/2008
References:
[1] p/n-FZ, 300m, (-30oC, 25ns), strip [Casse 2008][2] p-FZ,300m, (-40oC, 25ns), strip [Mandic 2008][3] n-SiC, 55m, (2s), pad [Moscatelli 2006][4] pCVD Diamond, scaled to 500m, 23 GeV p, strip [Adam et al. 2006, RD42] Note: Fluenze normalized with damage factor for Silicon (0.62)[5] 3D, double sided, 250m columns, 300m substrate [Pennicard 2007][6] n-EPI,75m, (-30oC, 25ns), pad [Kramberger 2006][7] n-EPI,150m, (-30oC, 25ns), pad [Kramberger 2006][8] n-EPI,150m, (-30oC, 25ns), strip [Messineo 2007]
Silicon Sensors
Other materials
n-in-p microstrip p-type FZ detectors (Micron, 280 or 300m thick, 80m pitch) Detectors read-out with 40MHz (SCT 128A)
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -10-
RD50 Silicon materials for Tracking Sensors Signal comparison for various Silicon sensors Note: Measured partly
under different conditions! Lines to guide the eye
(no modeling)!
1014 5 1015 5 1016
eq [cm-2]
5000
10000
15000
20000
25000
sign
al [e
lect
rons
]
SiC, n-type, 55 m, 900V, neutrons [3]
SiC
p-in-n (EPI), 150 m [7,8]p-in-n (EPI), 75m [6]
75m n-EPI
150m n-EPI
n-in-p (FZ), 300m, 500V, 23GeV p [1]n-in-p (FZ), 300m, 500V, neutrons [1]n-in-p (FZ), 300m, 500V, 26MeV p [1]n-in-p (FZ), 300m, 800V, 23GeV p [1]n-in-p (FZ), 300m, 800V, neutrons [1]n-in-p (FZ), 300m, 800V, 26MeV p [1]
n-in-p-Fz (500V)
n-in-p-Fz (800V)
p-in-n (FZ), 300m, 500V, 23GeV p [1]p-in-n (FZ), 300m, 500V, neutrons [1]n-FZ(500V)
M.Moll - 08/2008
References:
[1] p/n-FZ, 300m, (-30oC, 25ns), strip [Casse 2008][2] p-FZ,300m, (-40oC, 25ns), strip [Mandic 2008][3] n-SiC, 55m, (2s), pad [Moscatelli 2006][4] pCVD Diamond, scaled to 500m, 23 GeV p, strip [Adam et al. 2006, RD42] Note: Fluenze normalized with damage factor for Silicon (0.62)[5] 3D, double sided, 250m columns, 300m substrate [Pennicard 2007][6] n-EPI,75m, (-30oC, 25ns), pad [Kramberger 2006][7] n-EPI,150m, (-30oC, 25ns), pad [Kramberger 2006][8] n-EPI,150m, (-30oC, 25ns), strip [Messineo 2007]
Silicon Sensors
Other materials
highest fluence for strip detectors in LHC: The used p-in-n technology is sufficient
n-in-p technology should be sufficient for Super-LHC at radii presently (LHC) occupied by strip sensors
LHC SLHC
RD50 Charge Multiplication –FZ Strip Sensors
• CCE increases at SLHC fluences over the expectations• CCE>100% charge multiplication! • Most results showing an anomalous high charge collection efficiency
have been obtained until now with Micron FZ n-on-p strip detectors
• Read-out with SCT128A, 25 ns shaping• Possible dependence on manufacturer process details
investigated with measurements on sensors from a second producer (Hamamatsu Photonics) within the “ATLAS Upgrade Strip Sensor Collaboration”
• Studies concentrated on fluences relevant to pixels (ATLAS Insertable B-layer and SLHC)
• Preliminary results show a compatible CCE behaviour
[ M. Mikuž, Hiroshima Symposium 2009 ]
RD50 Charge Multiplication –Epi Diodes
• Epi diodes, 75 and 150 m thick• Measured trapping probability found to be proportional
to fluence and consistent with values extracted in FZ• Multiplication effect more evident for 75 m diodes• Smaller penetration depth (670 nm laser) stronger
charge multiplication
n-type,
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -13-
RD50 Mixed irradiations: 23 GeV protons+neutronsMicron diodes irradiated with protons first and then with 2e14 n cm-2 (control samples p-only, open marker)
• FZ-p,n: increase of Vfd proportional to Feq• MCz-n: decrease of Vfd , due to different signs of gc,n and gc,p• MCz-p at larger fluences the increase of Vfd is not proportional to the added fluence –as if material becomes more “n-like” with fluence – same as observed in annealing plots
80min@60oC 80min@60oC
neqncpeqpcC ggN ,,,, gc can be + or -
always +
nnppeq
[ G. Kramberger, 13th RD50 Workshop,Nov. 2008, http://dx.doi.org/10.1016/j.nima.2009.08.030 ]
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -14-
RD50 Mixed Irradiations (Neutrons+Protons)
Both FZ and MCz show “predicted” behaviour with mixed irradiation
FZ doses add• |Neff| increases
MCz doses compensate• |Neff| decreases, proton damage
compensate part of the neutron damage
1x1015 neq cm-2
[T.Affolder 13th RD50 Workshop, Nov.2008]
Mixed irradiation performed with: 5x1014 p (1 MeV equivalent fluence) 5x1014 n (1 MeV equivalent fluence)
More charge collected at 500 V after additional irradiation!
RD50 Planar pixel productions
MPP-HLL thin pixel production (75 and 150 m) on n- and p-type FZ silicon using a wafer bonding technique that allows variable thicknesses down to 50 m
Pre-irradiation characterization of the p-type wafers shows high yield and good breakdown performances
RD50 Planar Pixel project : production of pixels at CiS (CMS and ATLAS geometries) on FZ and MCz silicon with R&D focus on: - direct comparison of n-in-n and n-in-p performances - slim edges (needed for inner pixel layers in ATLAS) - Pixel isolation methods (moderated, uniform p-spray)
n-in-n wafer design
[M. Beimforde 14th RD50 Workshop, June 2009]
p-type pixels
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -16-
RD50 “3D” electrodes: - narrow columns along detector thickness,
- diameter: 10m, distance: 50 - 100m Lateral depletion: - decoupling of detector thickness and charge collection distance - lower depletion voltage needed
- fast signal - radiation hard
Development of 3D detectors
Fabrication of 3D detectors challenging: modified design under investigation within RD50
Columnar electrodes of both doping types are etched into the detector from both wafer sides
Columns are not etched through the entire detector: no need for wafer bonding technology but column overlap defines the performance.
n+ columns
p+columnsp-type substrate
metal
oxide
3D-DDTC
Two manufacturers: CNM (Barcelona): 14 wafers (p- and n-type) completed Oct. 2008 FBK (Trento): 3 3D-DDTC batches fabricated with different overlaps
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -17-
RD50 3D-DTC sensors –Test-beam data
[M.Koehler 14th RD50 Workshop, June.2009]
front column
back column
Overall efficiency: 97.3% Overall efficiency: 98.6%
No clustering strips with highest and 2nd highest signal joined into clusters
2D efficiency at 40 V for Q>2fC
Device from FBK: p-type strip sensor, 50 m column overlap Test-beam at CERN: 225 GeV/c muons and APV25 analogue readout (40 MHz)
Strip structure is clearly visible only when clustering is not applied.
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -18-
RD50 Test equipment: ALIBAVA ALIBAVA – A LIverpool BArcelona VAlencia collaboration System supported by RD50: Will enable more RD50 groups to investigate
strip sensors with ‘LHC-like’ electronics
[R.Marco-Hernández, 13th RD50 Workshop, Nov.2008]
Plug and Play System: Software part (PC) and hardware part connected by USB.
Hardware part: a dual board based system connected by flat cable.
Mother board intended:• To process the analogue data that comes from
the readout chips.• To process the trigger input signal in case of
radioactive source setup or to generate a trigger signal if a laser setup is used.
• To control the hardware part.• To communicate with a PC via USB.
Daughter board • It contains two Beetle readout chips • It has fan-ins and detector support to interface
the sensors. Software part:
It controls the whole system (configuration, calibration and acquisition).
It generates an output file for further data processing.
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -19-
RD50 RD50 achievements & links to LHC Experiments
Some important contributions of RD50 towards the SLHC detectors: p-type silicon (brought forward by RD50 community) is now considered to be
the base line option for the ATLAS Strip Tracker upgrade
n- MCZ (introduced by RD50 community) has improved performance in mixed fields due to compensation of neutron and proton damage: MCZ is under investigation in ATLAS, CMS and LHCb
RD50 results on very highly irradiated silicon strip sensors have shown that planar pixel sensors are a promising option also for the upgrade of the Experiments.
Charge multiplication effect observed for heavily irradiated sensors (diodes and strips). A dedicated R&D effort will be launched in RD50 to understand the underlying multiplication mechanism and optimize the CCE performances.
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -20-
RD50
Spares
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -21-
RD50
0 2 4 6 8 10proton fluence [1014 cm-2]
0
200
400
600
800
Vde
p (30
0m
) [V
]
0
2
4
6
8
10
12
|Nef
f| [1
012 c
m-3
]
FZ <111>FZ <111>DOFZ <111> (72 h 11500C)DOFZ <111> (72 h 11500C)MCZ <100>MCZ <100> CZ <100> (TD killed) CZ <100> (TD killed)
FZ, DOFZ, Cz and MCz Silicon
24 GeV/c proton irradiation (n-type silicon)
Strong differences in Vdep
Standard FZ silicon Oxygenated FZ (DOFZ) CZ silicon and MCZ silicon
Strong differences in internalelectric field shape (type inversion, double junction,…)
Different impact on pad and strip detector operation!
e.g.: a lower Vdep or |Neff| does not necessarily correspond to a higher CCE for strip detectors (see later)!
Common to all materials (after hadron irradiation): reverse current increase increase of trapping (electrons and holes) within ~ 20%
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -22-
RD50 n-in-p microstrip detectors
n-in-p microstrip p-type FZ detectors (Micron, 280 or 300m thick, 80m pitch, 18m implant ) Detectors read-out with 40MHz (SCT 128A)
CCE: ~7300e (~30%) after ~ 11016cm-2 800V
n-in-p sensors are strongly considered for ATLAS upgrade (previously p-in-n used)
Sign
al(1
03 e
lect
rons
)
[G.Casse, RD50 Workshop, June 2008]
Fluence(1014 n eq/cm2 )0 100 200 300 400 500
time at 80oC[min]
0 500 1000 1500 2000 2500time [days at 20oC]
02468
101214161820
CC
E (1
03 ele
ctro
ns)
6.8 x 1014cm-2 (proton - 800V)6.8 x 1014cm-2 (proton - 800V)
2.2 x 1015cm-2 (proton - 500 V)2.2 x 1015cm-2 (proton - 500 V)
4.7 x 1015cm-2 (proton - 700 V)4.7 x 1015cm-2 (proton - 700 V)
1.6 x 1015cm-2 (neutron - 600V)1.6 x 1015cm-2 (neutron - 600V)
M.MollM.Moll
[Data: G.Casse et al., NIMA 568 (2006) 46 and RD50 Workshops][Data: G.Casse et al., NIMA 568 (2006) 46 and RD50 Workshops]
no reverse annealing in CCE measurementsfor neutron and proton irradiated detectors
RD50 Charge Multiplication –FZ strip sensors
CCE increases at SLHC fluences over the expectations at high fluences CCE>100% charge multiplication! Micron n-on-p FZ strip detectors Read-out with SCT128A, 25 ns shaping Multiplication effect more relevant for thin (140 m) FZ structures at higher fluences: after heavy irradiation it is
possible to recover the full ionized charge For pixel layers this has the potential benefit of reducing the radiation length of the detector and yield a safer S/N
[I. Mandic et al., NIM A603 (2009) 263 ] [G. Casse, 14th RD50 Workshop, June 2009]
300 m
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -24-
RD501. CNM Barcelona ( 2 wafers fabricated in Nov. 2007) Double side processing with holes not all the way through n-type bulk bump bond 1 wafer to Medipix2 chips Further production (n and p-type)
Processing of Double-Column 3D detectors
10m
p+n-
TEOS
Poly
Junction
2. FBK (IRST-Trento) very similar design to CNM 2 batches produced (n-type and p-type )
First tests on irradiated devices performed ( CNM devices, strip sensors, 90Sr , Beetle chip, 5x1015neq/cm2 with reactor neutrons) : 12800 electrons
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -25-
RD50 2008 test beam with 3D sensors Two microstrip 3D DDTC detectors tested in testbeam (CMS/RD50)
• One produced by CNM (Barcelona), studied by Glasgow• One produced by FBK-IRST (Trento), studied by Freiburg
[M.Koehler 13th RD50 Workshop, Nov.2008]
A. Macchiolo – Max-Planck-Institut für Physik VERTEX 2009 Workshop- Putten (NL) 14th September 2009 -26-
RD50 3D-DTC sensors –Test-beam data
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