3 nV/√Hz, Low Power Instrumentation Amplifier
Enhanced Product AD8421-EP
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.Tel: 781.329.4700 ©2013 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com
FEATURES Specified from −55°C to 125°C
0.9 μV/°C maximum input offset voltage drift 5 ppm/°C maximum gain drift (G = 1)
Low power 2.3 mA maximum supply current
Low noise 3.2 nV/√Hz maximum input voltage noise at 1 kHz 200 fA/√Hz current noise at 1 kHz
Excellent ac specifications 2 MHz bandwidth (G = 100) 0.6 μs settling time to 0.001% (G = 10) 80 dB minimum CMRR at 20 kHz (G = 1)
High precision dc performance 84 dB CMRR minimum (G = 1) 2 nA maximum input bias current
Inputs protected to 40 V from opposite supply Gain set with a single resistor (G = 1 to 10,000)
ENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request
PIN CONNECTION DIAGRAM
TOP VIEW(Not to Scale)
–IN 1
RG 2
RG 3
+IN 4
+VS8
VOUT7
REF6
–VS5
AD8421-EP
1113
9-00
1
Figure 1.
10µ
1n100 1M
TO
TA
L N
OIS
E D
EN
SIT
Y A
T 1
kHz
(V/√
Hz)
SOURCE RESISTANCE, RS (Ω)
1µ
100n
10n
1k 10k 100k
G = 100
AD8421
BEST AVAILABLE1mA LOW POWER IN-AMP
BEST AVAILABLE7mA LOW NOISE IN-AMP
RS NOISE ONLY
1113
9-07
8
Figure 2. Noise Density vs. Source Resistance
GENERAL DESCRIPTION The AD8421-EP is a low cost, low power, extremely low noise, ultralow bias current, high speed instrumentation amplifier that is ideally suited for a broad spectrum of signal conditioning and data acquisition applications. This product features extremely high CMRR, allowing it to extract low level signals in the presence of high frequency common-mode noise over a wide temperature range.
The 10 MHz bandwidth, 35 V/μs slew rate, and 0.6 μs settling time to 0.001% (G = 10) allow the AD8421-EP to amplify high speed signals and excel in applications that require high channel count, multiplexed systems. Even at higher gains, the current feedback architecture maintains high performance; for example, at G = 100, the bandwidth is 2 MHz and the settling time is 0.8 μs. The AD8421-EP has excellent distortion performance, making it suitable for use in demanding applications such as vibration analysis.
The AD8421-EP delivers 3 nV/√Hz input voltage noise and 200 fA/√Hz current noise with only 2 mA quiescent current, making it an ideal choice for measuring low level signals. For applications with high source impedance, the AD8421-EP employs innovative process technology and design techniques to provide noise performance that is limited only by the sensor.
The AD8421-EP uses unique protection methods to ensure robust inputs while still maintaining very low noise. This protection allows input voltages up to 40 V from the opposite supply rail without damage to the part.
A single resistor sets the gain from 1 to 10,000. The reference pin can be used to apply a precise offset to the output voltage.
The AD8421-EP is specified over the military temperature range of −55°C to +125°C. It is available in an 8-lead MSOP package.
Additional application and technical information can be found in the AD8421 data sheet.
AD8421-EP Enhanced Product
Rev. 0 | Page 2 of 20
TABLE OF CONTENTS Features .............................................................................................. 1 General Description ......................................................................... 1 Revision History ............................................................................... 2 Specifications ..................................................................................... 3 Absolute Maximum Ratings ............................................................ 6
Thermal Resistance ...................................................................... 6
ESD Caution...................................................................................6 Pin Configuration and Function Descriptions ..............................7 Typical Performance Characteristics ..............................................8 Outline Dimensions ....................................................................... 18
Ordering Guide .......................................................................... 18
REVISION HISTORY 5/13—Revision 0: Initial Version
Enhanced Product AD8421-EP
Rev. 0 | Page 3 of 20
SPECIFICATIONS VS = ±15 V, VREF = 0 V, TA = 25°C, G = 1, RL = 2 kΩ, unless otherwise noted.
Table 1.
Parameter Test Conditions/ Comments Min Typ Max Unit COMMON-MODE REJECTION RATIO (CMRR)
CMRR DC to 60 Hz with 1 kΩ Source Imbalance VCM = −10 V to +10 V G = 1 84 dB G = 10 104 dB G = 100 124 dB G = 1000 134 dB Over Temperature, G = 1 TA = −55°C to +125°C 80 dB
CMRR at 20 kHz VCM = −10 V to +10 V G = 1 80 dB G = 10 90 dB G = 100 100 dB G = 1000 100 dB
NOISE Voltage Noise, 1 kHz1 VIN+, VIN− = 0 V
Input Voltage Noise, eni 3 3.2 nV/√Hz Output Voltage Noise, eno 60 nV/√Hz
Peak to Peak, RTI f = 0.1 Hz to 10 Hz G = 1 2 µV p-p G = 10 0.5 µV p-p G = 100 to 1000 0.07 µV p-p
Current Noise Spectral Density f = 1 kHz 200 fA/√Hz Peak to Peak, RTI f = 0.1 Hz to 10 Hz 18 pA p-p
VOLTAGE OFFSET2 Input Offset Voltage, VOSI VS = ±5 V to ±15 V 70 µV
Over Temperature TA = −55°C to +125°C 160 µV Average TC 0.9 µV/°C
Output Offset Voltage, VOSO 600 µV Over Temperature TA = −55°C to +125°C 1.5 mV Average TC 9 µV/°C
Offset RTI vs. Supply (PSR) VS = ±2.5 V to ±18 V G = 1 90 120 dB G = 10 110 120 dB G = 100 124 130 dB G = 1000 130 140 dB
INPUT CURRENT Input Bias Current 1 2 nA
Over Temperature TA = −55°C to +125°C 8 nA Average TC 50 pA/°C
Input Offset Current 0.5 2 nA Over Temperature TA = −55°C to +125°C 3 nA Average TC 1 pA/°C
AD8421-EP Enhanced Product
Rev. 0 | Page 4 of 20
Parameter Test Conditions/ Comments Min Typ Max Unit DYNAMIC RESPONSE
Small Signal Bandwidth −3 dB G = 1 10 MHz G = 10 10 MHz G = 100 2 MHz G = 1000 0.2 MHz
Settling Time 0.01% 10 V step G = 1 0.7 µs G = 10 0.4 µs G = 100 0.6 µs G = 1000 5 µs
Settling Time 0.001% 10 V step G = 1 1 µs G = 10 0.6 µs G = 100 0.8 µs G = 1000 6 µs
Slew Rate G = 1 to 100 35 V/µs
GAIN3 G = 1 + (9.9 kΩ/RG) Gain Range 1 10,000 V/V Gain Error VOUT = ±10 V
G = 1 0.05 % G = 10 to 1000 0.3 %
Gain Nonlinearity VOUT = −10 V to +10 V G = 1 RL ≥ 2 kΩ 1 ppm RL = 600 Ω 1 3 ppm G = 10 to 1000 RL ≥ 600 Ω 30 50 ppm VOUT = −5 V to +5 V 5 10 ppm
Gain vs. Temperature3 G = 1 5 ppm/°C G > 1 −80 ppm/°C
INPUT Input Impedance
Differential 30||3 GΩ||pF Common Mode 30||3 GΩ||pF
Input Operating Voltage Range4 VS = ±2.5 V to ±18 V −VS + 2.3 +VS − 1.8 V Over Temperature TA = −55°C −VS + 2.5 +VS − 2.0 V TA = +125°C −VS + 2.1 +VS − 1.8 V
OUTPUT RL = 2 kΩ Output Swing VS = ±2.5 V to ±18 V −VS + 1.2 +VS − 1.7 V
Over Temperature TA = −55°C to +125°C −VS + 1.4 +VS − 1.9 V Short-Circuit Current 65 mA
REFERENCE INPUT RIN 20 kΩ IIN VIN+, VIN− = 0 V 20 24 µA Voltage Range −VS +VS V Reference Gain to Output 1 ±
0.0001 V/V
Enhanced Product AD8421-EP
Rev. 0 | Page 5 of 20
Parameter Test Conditions/ Comments Min Typ Max Unit POWER SUPPLY
Operating Range Dual supply ±2.5 ±18 V Single supply 5 36 V Quiescent Current 2 2.3 mA
Over Temperature TA = −55°C to +125°C 2.8 mA TEMPERATURE RANGE
For Specified Performance −55 +125 °C 1 Total voltage noise = √(eni
2 + (eno/G)2 + eRG2). See the AD8421 data sheet for more information.
2 Total RTI VOS = (VOSI) + (VOSO/G). 3 These specifications do not include the tolerance of the external gain setting resistor, RG. For G > 1, add RG errors to the specifications given in this table. 4 Input voltage range of the AD8421-EP input stage only. The input range can depend on the common-mode voltage, differential voltage, gain, and reference voltage.
See the Typical Performance Characteristics section for more information.
AD8421-EP Enhanced Product
Rev. 0 | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating Supply Voltage ±18 V Output Short-Circuit Current Duration Indefinite Maximum Voltage at −IN or +IN1 −VS + 40 V Minimum Voltage at −IN or +IN +VS − 40 V Maximum Voltage at REF2 +VS + 0.3 V Minimum Voltage at REF −VS − 0.3 V Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +125°C Maximum Junction Temperature 150°C ESD
Human Body Model 2 kV Charged Device Model 1.25 kV Machine Model 0.2 kV
1 For voltages beyond these limits, use input protection resistors. See the
AD8421 data sheet for more information. 2 There are ESD protection diodes from the reference input to each supply, so
REF cannot be driven beyond the supplies in the same way that +IN and −IN can. See the AD8421 data sheet for more information.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE θJA is specified for a device in free air using a 4-layer JEDEC printed circuit board (PCB).
Table 3. Package θJA Unit 8-Lead MSOP 138.6 °C/W
ESD CAUTION
Enhanced Product AD8421-EP
Rev. 0 | Page 7 of 20
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
TOP VIEW(Not to Scale)
–IN 1
RG 2
RG 3
+IN 4
+VS8
VOUT7
REF6
–VS5
AD8421-EP
1113
9-00
2
Figure 3. Pin Configuration
Table 4. Pin Function Descriptions Pin No. Mnemonic Description 1 −IN Negative Input Terminal. 2, 3 RG Gain Setting Terminals. Place resistor across the RG pins to set the gain. G = 1 + (9.9 kΩ/RG). 4 +IN Positive Input Terminal. 5 −VS Negative Power Supply Terminal. 6 REF Reference Voltage Terminal. Drive this terminal with a low impedance voltage source to level shift the output. 7 VOUT Output Terminal. 8 +VS Positive Power Supply Terminal.
AD8421-EP Enhanced Product
Rev. 0 | Page 8 of 20
TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C, VS = ±15 V, VREF = 0 V, RL = 2 kΩ, unless otherwise noted.
600
0
100
200
300
400
500
–60 –40 –20 20 400 60
UN
ITS
INPUT OFFSET VOLTAGE (µV) 1113
9-00
3
Figure 4. Typical Distribution of Input Offset Voltage
1800
0
300
600
900
1200
1500
–2.0 –1.5 1.51.0–1.0 –0.5 0 0.5 2.0
UN
ITS
INPUT BIAS CURRENT (nA) 1113
9-00
4
Figure 5. Typical Distribution of Input Bias Current
1400
0
200
400
600
800
1200
1000
–20 –15 1510–10 –5 0 5 20
UN
ITS
PSRR (µV/V) 1113
9-00
5
Figure 6. Typical Distribution of PSRR (G = 1)
600
0
100
200
300
400
500
–400 –300 300200–200 –100 0 100 400
UN
ITS
OUTPUT OFFSET VOLTAGE (µV) 1113
9-00
6
Figure 7. Typical Distribution of Output Offset Voltage
800
1000
1200
600
0
200
400
–2.0 –1.5 –1.0 –0.5 0.5 1.0 1.50 2.0
UN
ITS
INPUT OFFSET CURRENT (nA) 1113
9-00
7
Figure 8. Typical Distribution of Input Offset Current
600
800
1000
1200
1400
1600
0
200
400
–120 1209060300–30–60–90
UN
ITS
CMRR (µV/V) 1113
9-00
8
Figure 9. Typical Distribution of CMRR (G = 1)
Enhanced Product AD8421-EP
Rev. 0 | Page 9 of 20
15
10
5
0
–15
–10
–5
–15 15105–5–10 0
CO
MM
ON
-MO
DE
VO
LT
AG
E (
V)
OUTPUT VOLTAGE (V)
VS = ±15V
VS = ±12V
G = 1
1113
9-00
9
Figure 10. Input Common-Mode Voltage vs. Output Voltage; VS = ±12 V and ±15 V (G = 1)
4
3
2
0
1
–3
–2
–1
–4 4321–3 –2 –1 0
CO
MM
ON
-MO
DE
VO
LT
AG
E (
V)
OUTPUT VOLTAGE (V)
VS = ±5V
VS = ±2.5V
G = 1
1113
9-01
0
Figure 11. Input Common-Mode Voltage vs. Output Voltage; VS = ±2.5 V and ±5 V (G = 1)
15
10
5
0
–15
–10
–5
–15 15105–5–10 0
CO
MM
ON
-MO
DE
VO
LT
AG
E (
V)
OUTPUT VOLTAGE (V)
VS = ±15V
VS = ±12V
G = 100
1113
9-01
1
Figure 12. Input Common-Mode Voltage vs. Output Voltage; VS = ±12 V and ±15 V (G = 100)
4
3
2
0
1
–4
–3
–2
–1
–4 4321–3 –2 –1 0
CO
MM
ON
-MO
DE
VO
LT
AG
E (
V)
OUTPUT VOLTAGE (V)
VS = ±5V
VS = ±2.5V
G = 100
1113
9-01
2
Figure 13. Input Common-Mode Voltage vs. Output Voltage; VS = ±2.5 V and ±5 V (G = 100)
40
–40–35 40
INP
UT
CU
RR
EN
T (
mA
)
INPUT VOLTAGE (V)
–30
–20
–10
0
10
20
30
–30 –25 –20 –15 –10 –5 0 5 10 15 20 25 30 35
VS = 5VG = 1
1113
9-01
3
Figure 14. Input Overvoltage Performance; G = 1, +VS = 5 V, −VS = 0 V
30
–30–25 25
INP
UT
CU
RR
EN
T (
mA
)
INPUT VOLTAGE (V)
–20
–10
0
10
20
–20 –15 –10 –5 0 5 10 15 20
VS = ±15VG = 1
1113
9-01
4
Figure 15. Input Overvoltage Performance; G = 1, VS = ±15 V
AD8421-EP Enhanced Product
Rev. 0 | Page 10 of 20
40
–40–35 40
INP
UT
CU
RR
EN
T (
mA
)
INPUT VOLTAGE (V)
–30
–20
–10
0
10
20
30
–30 –25 –20 –15 –10 –5 0 5 10 15 20 25 30 35
VS = 5VG = 100
1113
9-01
5
Figure 16. Input Overvoltage Performance; +VS = 5 V, −VS = 0 V, G = 100
30
–30–25 25
INP
UT
CU
RR
EN
T (
mA
)
INPUT VOLTAGE (V)
–20
–10
0
10
20
–20 –15 –10 –5 0 5 10 15 20
VS = ±15VG = 100
1113
9-01
6
Figure 17. Input Overvoltage Performance; VS = ±15 V, G = 100
2.5
–2.5–12 14
BIA
S C
UR
RE
NT
(n
A)
COMMON-MODE VOLTAGE (V)
–2.0
–1.5
–1.0
–0.5
0
0.5
1.0
1.5
2.0
–10 –8 –6 –4 –2 0 2 4 6 8 10 12
1113
9-01
7
Figure 18. Input Bias Current vs. Common-Mode Voltage
160
140
120
100
80
60
40
20
00.1 1 10 100 1k 10k 100k 1M
FREQUENCY (Hz)
PO
SIT
IVE
PS
RR
(d
B)
GAIN = 100
GAIN = 10
GAIN = 1
GAIN = 1000
1113
9-01
8
Figure 19. Positive PSRR vs. Frequency
160
140
120
100
80
60
40
20
00.1 1 10 100 1k 10k 100k 1M
FREQUENCY (Hz)
NE
GA
TIV
E P
SR
R (
dB
)
GAIN = 100
GAIN = 10
GAIN = 1
GAIN = 1000
1113
9-01
9
Figure 20. Negative PSRR vs. Frequency
70
–30100 1k 10k 100k 1M 10M
GA
IN (
dB
)
FREQUENCY (Hz)
–20
–10
0
10
20
30
40
50
60
GAIN = 100
GAIN = 10
GAIN = 1
GAIN = 1000
1113
9-02
0
Figure 21. Gain vs. Frequency
Enhanced Product AD8421-EP
Rev. 0 | Page 11 of 20
40
60
80
100
CM
RR
(d
B)
120
140
160
0.1 1 10 100 1k 10k 100k
FREQUENCY (Hz)
GAIN = 1000
GAIN = 100
GAIN = 10
GAIN = 1
1113
9-02
1
Figure 22. CMRR vs. Frequency
40
60
80
100
CM
RR
(d
B)
120
140
160
0.1 1 10 100 1k 10k 100k
FREQUENCY (Hz)
GAIN = 1000
GAIN = 100
GAIN = 10
GAIN = 1
1113
9-02
2
Figure 23. CMRR vs. Frequency, 1 kΩ Source Imbalance
2.0
1.5
0.5
0
1.0
–0.50 50
CH
AN
GE
IN
IN
PU
T O
FF
SE
T V
OL
TA
GE
(µ
V)
WARM-UP TIME (Seconds)
5 10 15 20 25 30 35 40 45
1113
9-02
3
Figure 24. Change in Input Offset Voltage (VOSI) vs. Warm-Up Time
–8
–6
–4
–2
0
2
4
6
–55 –40 –25 –10 5 20 35 50 65 80 95 110 125
BIA
S C
UR
RE
NT
(n
A)
TEMPERATURE (°C)
REPRESENTATIVE SAMPLES
1113
9-12
5
Figure 25. Input Bias Current vs. Temperature
–100
–80
–60
–40
–20
0
20
40
60
80
100
–55 –40 –25 –10 5 20 35 50 65 80 95 110 125
GA
IN E
RR
OR
(µ
V/V
)
TEMPERATURE (°C)
REPRESENTATIVE SAMPLESGAIN = 1
1113
9-12
6
Figure 26. Gain vs. Temperature (G = 1)
–15
–10
–5
0
5
10
15
–55 –40 –25 –10 5 20 35 50 65 80 95 110 125
CM
RR
(µ
V/V
)
REPRESENTATIVE SAMPLESGAIN = 1
TEMPERATURE (°C) 1113
9-12
7
Figure 27. CMRR vs. Temperature (G = 1)
AD8421-EP Enhanced Product
Rev. 0 | Page 12 of 20
0
0.5
1.0
1.5
2.0
2.5
3.0
–55 –40 –25 –10 5 20 35 50 65 80 95 110 125
SU
PP
LY C
UR
RE
NT
(m
A)
TEMPERATURE (°C)
VS = ±15V
1113
9-12
8Figure 28. Supply Current vs. Temperature (G = 1)
–120
–100
–80
–60
–40
–20
0
20
40
60
80
–55 –40 –25 –10 5 20 35 50 65 80 95 110 125
SH
OR
T C
IRC
UIT
CU
RR
EN
T (
mA
)
TEMPERATURE (°C)
ISHORT–
ISHORT+
1113
9-12
9
Figure 29. Short-Circuit Current vs. Temperature (G = 1)
TEMPERATURE (°C)
0
5
10
15
20
25
30
35
40
–55 –40 –25 –10 5 20 35 50 65 80 95 110 125
SL
EW
RA
TE
(V
/µs)
+SR
–SR
1113
9-13
0
Figure 30. Slew Rate vs. Temperature, VS = ±15 V (G = 1)
TEMPERATURE (°C)
0
5
10
15
20
25
30
35
40
45
–55 –40 –25 –10 5 20 35 50 65 80 95 110 125
SL
EW
RA
TE
(V
/µs)
–SR
+SR
1113
9-13
1
Figure 31. Slew Rate vs. Temperature, VS = ±5 V (G = 1)
2 4 6 8 10 12 14 16 18
INP
UT
VO
LTA
GE
(V
)R
EF
ER
RE
DT
O S
UP
PLY
VO
LTA
GE
S
SUPPLY VOLTAGE (±VS)
–55°C–40°C+25°C+85°C+105°C+125°C
+2.0
+VS
–0.5
–1.0
–1.5
–2.0
–2.5
+2.5
–VS
+0.5
+1.0
+1.5
1113
9-13
2
Figure 32. Input Voltage Limit vs. Supply Voltage
–15
–10
–5
0
5
10
15
100 1k 10k 100k
OU
TP
UT
VO
LTA
GE
SW
ING
(V
)
LOAD (Ω)
+125°C+105°C+85°C+25°C–40°C–55°C
1113
9-13
5
Figure 33. Output Voltage Swing vs. Load Resistance
Enhanced Product AD8421-EP
Rev. 0 | Page 13 of 20
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10
OU
TP
UT
VO
LTA
GE
SW
ING
(V
)R
EF
ER
RE
DT
O S
UP
PLY
VO
LTA
GE
S
OUTPUT CURRENT (A)
+VS
–VS
–2
–4
+4
–6
+2
+6
–55°C–40°C+25°C+85°C+105°C+125°C
1113
9-13
6
Figure 34. Output Voltage Swing vs. Output Current
5
4
3
–5
–4
–3
–2
–1
0
1
2
–10 –8 –6 –4 –2 0 2 4 6 8 10
NO
NL
INE
AR
ITY
(p
pm
)
OUTPUT VOLTAGE (V)
GAIN = 1
RL = 2kΩRL = 10kΩ
1113
9-03
5
Figure 35. Gain Nonlinearity (G = 1), RL = 10 kΩ, 2 kΩ
5
4
3
–5
–4
–3
–2
–1
0
1
2
–10 –8 –6 –4 –2 0 2 4 6 8 10
NO
NL
INE
AR
ITY
(p
pm
)
OUTPUT VOLTAGE (V)
GAIN = 1
RL = 600Ω
1113
9-03
6
Figure 36. Gain Nonlinearity (G = 1), RL = 600 Ω
100
80
60
–100
–80
–60
–40
–20
0
20
40
–10 –8 –6 –4 –2 0 2 4 6 8 10
NO
NL
INE
AR
ITY
(p
pm
)
OUTPUT VOLTAGE (V)
GAIN = 1000
RL = 600Ω
1113
9-07
2
Figure 37. Gain Nonlinearity (G = 1000), RL = 600 Ω, VOUT = ±10 V
100
80
60
–100
–80
–60
–40
–20
0
20
40
–5 –4 –3 –2 –1 0 1 2 3 4 5
NO
NL
INE
AR
ITY
(p
pm
)
OUTPUT VOLTAGE (V)
GAIN = 1000
RL = 600Ω
1113
9-07
3
Figure 38. Gain Nonlinearity (G = 1000), RL = 600 Ω, VOUT = ±5 V
VO
LTA
GE
NO
ISE
SP
EC
TR
AL
DE
NS
ITY
(n
V/√
Hz)
1
100
10
1k
1 10 100 1k 10k 100k
FREQUENCY (Hz)
GAIN = 1
GAIN = 10
GAIN = 100
GAIN = 1000
1113
9-03
7
Figure 39. RTI Voltage Noise Spectral Density vs. Frequency
AD8421-EP Enhanced Product
Rev. 0 | Page 14 of 20
1s/DIV
G = 1000, 40nV/DIV
G = 1, 1µV/DIV
1113
9-03
8
Figure 40. 0.1 Hz to 10 Hz RTI Voltage Noise (G = 1, G = 1000)
10k
1k
100
100.1 1 10 100 1k 10k 100k
CU
RR
EN
T N
OIS
E (
fA/√
Hz)
FREQUENCY (Hz) 1113
9-03
9
Figure 41. Current Noise Spectral Density vs. Frequency
1s/DIV5pA/DIV
1113
9-04
0
Figure 42. 0.1 Hz to 10 Hz Current Noise
30
25
0
5
10
15
20
10 100 1k 10k 100k 1M 10M
OU
TP
UT
VO
LT
AG
E (
V p
-p)
FREQUENCY (Hz) 1113
9-04
5
Figure 43. Large Signal Frequency Response
1µs/DIV
5V/DIV
0.002%/DIV
720ns TO 0.01%1.12µs TO 0.001%
1113
9-04
1
Figure 44. Large Signal Pulse Response and Settling Time (G = 1), 10 V Step, VS = ±15 V, RL = 2 kΩ, CL = 100 pF
1µs/DIV
5V/DIV
0.002%/DIV
420ns TO 0.01%604ns TO 0.001%
1113
9-04
2
Figure 45. Large Signal Pulse Response and Settling Time (G = 10), 10 V Step, VS = ±15 V, RL = 2 kΩ, CL = 100 pF
Enhanced Product AD8421-EP
Rev. 0 | Page 15 of 20
1µs/DIV
5V/DIV
0.002%/DIV
704ns TO 0.01%764ns TO 0.001%
1113
9-04
3
Figure 46. Large Signal Pulse Response and Settling Time (G = 100), 10 V Step, VS = ±15 V, RL = 2 kΩ, CL = 100 pF
4µs/DIV
5V/DIV
0.002%/DIV
3.8µs TO 0.01%5.76µs TO 0.001%
1113
9-04
4
Figure 47. Large Signal Pulse Response and Settling Time (G = 1000), 10 V Step, VS = ±15 V, RL = 2 kΩ, CL = 100 pF
2500
02 20
SE
TT
LIN
G T
IME
(n
s)
STEP SIZE (V)
500
1000
1500
2000
4 6 8 10 12 14 16 18
SETTLED TO 0.01%
SETTLED TO 0.001%
GAIN = 1
1113
9-05
4
Figure 48. Settling Time vs. Step Size (G = 1), RL = 2 kΩ, CL = 100 pF
50mV/DIV
GAIN = 1
1µs/DIV
1113
9-04
6
Figure 49. Small Signal Pulse Response (G = 1), RL = 600 Ω, CL = 100 pF
50mV/DIV
GAIN = 10
1µs/DIV
1113
9-04
7
Figure 50. Small Signal Pulse Response (G = 10), RL = 600 Ω, CL = 100 pF
20mV/DIV
GAIN = 100
1µs/DIV
1113
9-04
8
Figure 51. Small Signal Pulse Response (G = 100), RL = 600 Ω, CL = 100 pF
AD8421-EP Enhanced Product
Rev. 0 | Page 16 of 20
20mV/DIV
GAIN = 1000
2µs/DIV
1113
9-04
9
Figure 52. Small Signal Pulse Response (G = 1000), RL = 600 Ω, CL = 100 pF
G = 1
NO LOAD
20pF 50pF100pF
50mV/DIV 1µs/DIV
1113
9-05
3
Figure 53. Small Signal Response with Various Capacitive Loads (G = 1), RL = Infinity
–40
–15010 10k1k100
AM
PL
ITU
DE
(d
Bc)
FREQUENCY (Hz)
–140
–130
–120
–110
–100
–90
–80
–70
–60
–50RL ≥ 600Ω VOUT = 10V p-p
1113
9-05
5
Figure 54. Second Harmonic Distortion vs. Frequency (G = 1)
–40
–15010 10k1k100
AM
PL
ITU
DE
(d
Bc)
FREQUENCY (Hz)
–140
–130
–120
–110
–100
–90
–80
–70
–60
–50NO LOADRL = 2kΩRL = 600Ω
VOUT = 10V p-p
1113
9-05
6
Figure 55. Third Harmonic Distortion vs. Frequency (G = 1)
–40
–12010 10k1k100
AM
PL
ITU
DE
(d
Bc)
FREQUENCY (Hz)
–110
–100
–90
–80
–70
–60
–50
VOUT = 10V p-pNO LOADRL = 2kΩRL = 600Ω
1113
9-07
5
Figure 56. Second Harmonic Distortion vs. Frequency (G = 1000)
–40
–12010 10k1k100
AM
PL
ITU
DE
(d
Bc)
FREQUENCY (Hz)
–110
–100
–90
–80
–70
–60
–50
VOUT = 10V p-pRL ≥ 600Ω
1113
9-07
6
Figure 57. Third Harmonic Distortion vs. Frequency (G = 1000)
Enhanced Product AD8421-EP
Rev. 0 | Page 17 of 20
–20
–14010 10k1k100
AM
PL
ITU
DE
(d
Bc)
FREQUENCY (Hz)
–110
–120
–130
–100
–90
–80
–70
–60
–50
–40
–30G = 1G = 10G = 100G = 1000
VOUT = 10V p-pRL = 2kΩ
1113
9-07
7
Figure 58. THD vs. Frequency
AD8421-EP Enhanced Product
Rev. 0 | Page 18 of 20
OUTLINE DIMENSIONS
COMPLIANT TO JEDEC STANDARDS MO-187-AA
6°0°
0.800.550.40
4
8
1
5
0.65 BSC
0.400.25
1.10 MAX
3.203.002.80
COPLANARITY0.10
0.230.09
3.203.002.80
5.154.904.65
PIN 1IDENTIFIER
15° MAX0.950.850.75
0.150.05
10-0
7-20
09-B
Figure 59. 8-Lead Mini Small Outline Package [MSOP]
(RM-8) Dimensions shown in millimeters
ORDERING GUIDE Model1 Temperature Range Package Description Package Option Branding AD8421TRMZ-EP −55°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 Y4T AD8421TRMZ-EP-R7 −55°C to +125°C 8-Lead Mini Small Outline Package [MSOP] RM-8 Y4T 1 Z = RoHS Compliant Part.
AD8421-EP Enhanced Product
Rev. 0 | Page 20 of 20
NOTES
©2013 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D11139-0-5/12(0)
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