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Page 1: segfaultsdrolet.segfaults.net/EEE210/ProblemsAC-calculations... · 2019-12-17 · 5. The MOSFET is biased in the active region at the Q-point: (V GS = 2.934,I D = 9.421,V DS = 11.63)
Page 2: segfaultsdrolet.segfaults.net/EEE210/ProblemsAC-calculations... · 2019-12-17 · 5. The MOSFET is biased in the active region at the Q-point: (V GS = 2.934,I D = 9.421,V DS = 11.63)
Page 3: segfaultsdrolet.segfaults.net/EEE210/ProblemsAC-calculations... · 2019-12-17 · 5. The MOSFET is biased in the active region at the Q-point: (V GS = 2.934,I D = 9.421,V DS = 11.63)
Page 4: segfaultsdrolet.segfaults.net/EEE210/ProblemsAC-calculations... · 2019-12-17 · 5. The MOSFET is biased in the active region at the Q-point: (V GS = 2.934,I D = 9.421,V DS = 11.63)

Answers: Units are [V] for voltages, [mA] for currents, [kΩ] for impedances,[m0] for gm.

1. The MOSFET is biased in the active region at the Q-point:

(VGS = 2.926, ID = 9.0740, VDS = 6.963)

The MOSFET’s transconductance gain is gm = 42.60.

The amplifier’s characteristics are:

AV = −44.63, AI = −1488., AP = 66390

Zin = 66.67, Zout = 2.2

The range is −0.2130 < vi(t) < 0.1437.

2. The MOSFET is biased in the active region at the Q-point:

(VGS = 4.784, ID = 260.7, VDS = 9.926)

The MOSFET’s transconductance gain is gm = 228.4.

The amplifier’s characteristics are:

AV = 0.8839, AI = 1515., AP = 1339.

Zin = 85.71, Zout = 0.004195

The range is −9.833 < vi(t) < 7.773.

3. The MOSFET is biased in the active region at the Q-point:

(VGS = 2.926, ID = 9.074, VDS = 6.963)

The MOSFET’s transconductance gain is gm = 42.60.

The amplifier’s characteristics are:

AV = 0.9660, AI = 32.20, AP = 31.10

Zin = 66.67, Zout = 0.02294

The range is −6.262 < vi(t) < 6.577.

4. The MOSFET is biased in the active region at the Q-point:

(VGS = 2.635, ID = 0.9125, VDS = 5.217)

The MOSFET’s transconductance gain is gm = 13.51.

The amplifier’s characteristics are:

AV = 67.55, AI = 0.4941, AP = 33.37

Zin = 0.07315, Zout = 10.00

The range is −0.07545 < vi(t) < 0.06755.

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Page 5: segfaultsdrolet.segfaults.net/EEE210/ProblemsAC-calculations... · 2019-12-17 · 5. The MOSFET is biased in the active region at the Q-point: (V GS = 2.934,I D = 9.421,V DS = 11.63)

5. The MOSFET is biased in the active region at the Q-point:

(VGS = 2.934, ID = 9.421, VDS = 11.63)

The MOSFET’s transconductance gain is gm = 43.41.

The amplifier’s characteristics are:

AV = −0.7762, AI = −64.68, AP = 50.20

Zin = 100.0, Zout = 1.200

The range is −7.283 < vi(t) < 6.319.

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