2008 Design amp ManufacturingII
Spring 2004
MEMS Tiny Products
2008-spring-2003
Tunable microcavity waveguide fabrication process flow
front-view side-view (thrursquo waveguide)
1 RIE Si trench
2 Pattern Pt bottom electrode
3 Pattern PZT and anneal
4 Pattern Pt top electrode
2008-spring-2003 C Wong amp S Kim
Tunable microcavity waveguide12 fabrication process flow
front-view side-view (thrursquo waveguide)
2008-spring-2003
5 RIE SiO2
6 X-ray lithography of PMMAfor Cr mask
7 CF4 Si waveguide RIE
8 XeF2 isotropic release etch
Process Flow
Wafers
Deposition Lithography
Devices
Etch
Photo resist coatingPattern transferPhoto resist removal
OxidationSputteringEvaporationCVDSol-gelEpitaxy
Wet isotropicWet anisotropicPlasmaRIEDRIE
2008-spring-2003
Wet or dry
Wet Dry
Low resolution feature Size Low cost Undercut for isotropic Wider area needed for anisotropic wafer etch Sticking
2008-spring-2003
High resolution feature size Expensive Vertical side wall Avoid sticking
Etching Issues - Anisotropy
-Structural layer-Sacrificial layer
mask An-isotropic
Isotropic
2008-spring-2003
Etching Issues - Selectivity
Selectivity is the ratio of the etch rate of the target material being etched to the etch rate of other materials Chemical etches are generally more selective than plasma etches Selectivity to masking material and to etch-stop is important
2008-spring-2003
Bulk Micromachining
KOH etches silicon substrate1048708 V-grooves trenches1048708 Concave stop convex undercut1048708 (100) to (111) 1048708 100 to 1 etch rate1048708 Masks1048708 SiO2 for short period1048708 SixNy Excellent1048708 heavily doped P++ silicon etch stop
2008-spring-2003
Dry etching
1048708 RIE (reactive ion etching)1048708 Chemical amp physical etching by RF excited reactive ions1048708 Bombardment of accelerated ions anisotropic1048708 SF6 rarr Si CHF3 rarroxide and polymers1048708 Anisotropy selectivity etch rate surface roughness by gas concentration pressure RF power temperature control1048708 Plasma etching1048708 Purely chemical etching by reactive ions isotropic1048708 Vapor phase etching1048708 Use of reactive gases XeF21048708 No drying needed
sticktion2008-spring-2003
DRIE (Deep RIE)
10487081048708 Alternating RIE and polymer deposition process for side wall protection and removal1048708 Etching phase SF6 Ar1048708 Polymerization process CHF3Ar forms Teflon-like layer1048708 Only 9 years after the Bosch process patent 1994
2008-spring-2003
-15 to 4 μmmin-selectivity to PR 100 to 1
Deposition processes
1048708 Chemical1048708 CVD (Chemical Vapor Deposition)1048708 Thermal Oxidation1048708 Epitaxy1048708 Electrodeposition
1048708 Physical1048708 PVD1048708 Evaporation1048708 Sputtering1048708 Casting
2008-spring-2003
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Tunable microcavity waveguide fabrication process flow
front-view side-view (thrursquo waveguide)
1 RIE Si trench
2 Pattern Pt bottom electrode
3 Pattern PZT and anneal
4 Pattern Pt top electrode
2008-spring-2003 C Wong amp S Kim
Tunable microcavity waveguide12 fabrication process flow
front-view side-view (thrursquo waveguide)
2008-spring-2003
5 RIE SiO2
6 X-ray lithography of PMMAfor Cr mask
7 CF4 Si waveguide RIE
8 XeF2 isotropic release etch
Process Flow
Wafers
Deposition Lithography
Devices
Etch
Photo resist coatingPattern transferPhoto resist removal
OxidationSputteringEvaporationCVDSol-gelEpitaxy
Wet isotropicWet anisotropicPlasmaRIEDRIE
2008-spring-2003
Wet or dry
Wet Dry
Low resolution feature Size Low cost Undercut for isotropic Wider area needed for anisotropic wafer etch Sticking
2008-spring-2003
High resolution feature size Expensive Vertical side wall Avoid sticking
Etching Issues - Anisotropy
-Structural layer-Sacrificial layer
mask An-isotropic
Isotropic
2008-spring-2003
Etching Issues - Selectivity
Selectivity is the ratio of the etch rate of the target material being etched to the etch rate of other materials Chemical etches are generally more selective than plasma etches Selectivity to masking material and to etch-stop is important
2008-spring-2003
Bulk Micromachining
KOH etches silicon substrate1048708 V-grooves trenches1048708 Concave stop convex undercut1048708 (100) to (111) 1048708 100 to 1 etch rate1048708 Masks1048708 SiO2 for short period1048708 SixNy Excellent1048708 heavily doped P++ silicon etch stop
2008-spring-2003
Dry etching
1048708 RIE (reactive ion etching)1048708 Chemical amp physical etching by RF excited reactive ions1048708 Bombardment of accelerated ions anisotropic1048708 SF6 rarr Si CHF3 rarroxide and polymers1048708 Anisotropy selectivity etch rate surface roughness by gas concentration pressure RF power temperature control1048708 Plasma etching1048708 Purely chemical etching by reactive ions isotropic1048708 Vapor phase etching1048708 Use of reactive gases XeF21048708 No drying needed
sticktion2008-spring-2003
DRIE (Deep RIE)
10487081048708 Alternating RIE and polymer deposition process for side wall protection and removal1048708 Etching phase SF6 Ar1048708 Polymerization process CHF3Ar forms Teflon-like layer1048708 Only 9 years after the Bosch process patent 1994
2008-spring-2003
-15 to 4 μmmin-selectivity to PR 100 to 1
Deposition processes
1048708 Chemical1048708 CVD (Chemical Vapor Deposition)1048708 Thermal Oxidation1048708 Epitaxy1048708 Electrodeposition
1048708 Physical1048708 PVD1048708 Evaporation1048708 Sputtering1048708 Casting
2008-spring-2003
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Tunable microcavity waveguide12 fabrication process flow
front-view side-view (thrursquo waveguide)
2008-spring-2003
5 RIE SiO2
6 X-ray lithography of PMMAfor Cr mask
7 CF4 Si waveguide RIE
8 XeF2 isotropic release etch
Process Flow
Wafers
Deposition Lithography
Devices
Etch
Photo resist coatingPattern transferPhoto resist removal
OxidationSputteringEvaporationCVDSol-gelEpitaxy
Wet isotropicWet anisotropicPlasmaRIEDRIE
2008-spring-2003
Wet or dry
Wet Dry
Low resolution feature Size Low cost Undercut for isotropic Wider area needed for anisotropic wafer etch Sticking
2008-spring-2003
High resolution feature size Expensive Vertical side wall Avoid sticking
Etching Issues - Anisotropy
-Structural layer-Sacrificial layer
mask An-isotropic
Isotropic
2008-spring-2003
Etching Issues - Selectivity
Selectivity is the ratio of the etch rate of the target material being etched to the etch rate of other materials Chemical etches are generally more selective than plasma etches Selectivity to masking material and to etch-stop is important
2008-spring-2003
Bulk Micromachining
KOH etches silicon substrate1048708 V-grooves trenches1048708 Concave stop convex undercut1048708 (100) to (111) 1048708 100 to 1 etch rate1048708 Masks1048708 SiO2 for short period1048708 SixNy Excellent1048708 heavily doped P++ silicon etch stop
2008-spring-2003
Dry etching
1048708 RIE (reactive ion etching)1048708 Chemical amp physical etching by RF excited reactive ions1048708 Bombardment of accelerated ions anisotropic1048708 SF6 rarr Si CHF3 rarroxide and polymers1048708 Anisotropy selectivity etch rate surface roughness by gas concentration pressure RF power temperature control1048708 Plasma etching1048708 Purely chemical etching by reactive ions isotropic1048708 Vapor phase etching1048708 Use of reactive gases XeF21048708 No drying needed
sticktion2008-spring-2003
DRIE (Deep RIE)
10487081048708 Alternating RIE and polymer deposition process for side wall protection and removal1048708 Etching phase SF6 Ar1048708 Polymerization process CHF3Ar forms Teflon-like layer1048708 Only 9 years after the Bosch process patent 1994
2008-spring-2003
-15 to 4 μmmin-selectivity to PR 100 to 1
Deposition processes
1048708 Chemical1048708 CVD (Chemical Vapor Deposition)1048708 Thermal Oxidation1048708 Epitaxy1048708 Electrodeposition
1048708 Physical1048708 PVD1048708 Evaporation1048708 Sputtering1048708 Casting
2008-spring-2003
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Process Flow
Wafers
Deposition Lithography
Devices
Etch
Photo resist coatingPattern transferPhoto resist removal
OxidationSputteringEvaporationCVDSol-gelEpitaxy
Wet isotropicWet anisotropicPlasmaRIEDRIE
2008-spring-2003
Wet or dry
Wet Dry
Low resolution feature Size Low cost Undercut for isotropic Wider area needed for anisotropic wafer etch Sticking
2008-spring-2003
High resolution feature size Expensive Vertical side wall Avoid sticking
Etching Issues - Anisotropy
-Structural layer-Sacrificial layer
mask An-isotropic
Isotropic
2008-spring-2003
Etching Issues - Selectivity
Selectivity is the ratio of the etch rate of the target material being etched to the etch rate of other materials Chemical etches are generally more selective than plasma etches Selectivity to masking material and to etch-stop is important
2008-spring-2003
Bulk Micromachining
KOH etches silicon substrate1048708 V-grooves trenches1048708 Concave stop convex undercut1048708 (100) to (111) 1048708 100 to 1 etch rate1048708 Masks1048708 SiO2 for short period1048708 SixNy Excellent1048708 heavily doped P++ silicon etch stop
2008-spring-2003
Dry etching
1048708 RIE (reactive ion etching)1048708 Chemical amp physical etching by RF excited reactive ions1048708 Bombardment of accelerated ions anisotropic1048708 SF6 rarr Si CHF3 rarroxide and polymers1048708 Anisotropy selectivity etch rate surface roughness by gas concentration pressure RF power temperature control1048708 Plasma etching1048708 Purely chemical etching by reactive ions isotropic1048708 Vapor phase etching1048708 Use of reactive gases XeF21048708 No drying needed
sticktion2008-spring-2003
DRIE (Deep RIE)
10487081048708 Alternating RIE and polymer deposition process for side wall protection and removal1048708 Etching phase SF6 Ar1048708 Polymerization process CHF3Ar forms Teflon-like layer1048708 Only 9 years after the Bosch process patent 1994
2008-spring-2003
-15 to 4 μmmin-selectivity to PR 100 to 1
Deposition processes
1048708 Chemical1048708 CVD (Chemical Vapor Deposition)1048708 Thermal Oxidation1048708 Epitaxy1048708 Electrodeposition
1048708 Physical1048708 PVD1048708 Evaporation1048708 Sputtering1048708 Casting
2008-spring-2003
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Wet or dry
Wet Dry
Low resolution feature Size Low cost Undercut for isotropic Wider area needed for anisotropic wafer etch Sticking
2008-spring-2003
High resolution feature size Expensive Vertical side wall Avoid sticking
Etching Issues - Anisotropy
-Structural layer-Sacrificial layer
mask An-isotropic
Isotropic
2008-spring-2003
Etching Issues - Selectivity
Selectivity is the ratio of the etch rate of the target material being etched to the etch rate of other materials Chemical etches are generally more selective than plasma etches Selectivity to masking material and to etch-stop is important
2008-spring-2003
Bulk Micromachining
KOH etches silicon substrate1048708 V-grooves trenches1048708 Concave stop convex undercut1048708 (100) to (111) 1048708 100 to 1 etch rate1048708 Masks1048708 SiO2 for short period1048708 SixNy Excellent1048708 heavily doped P++ silicon etch stop
2008-spring-2003
Dry etching
1048708 RIE (reactive ion etching)1048708 Chemical amp physical etching by RF excited reactive ions1048708 Bombardment of accelerated ions anisotropic1048708 SF6 rarr Si CHF3 rarroxide and polymers1048708 Anisotropy selectivity etch rate surface roughness by gas concentration pressure RF power temperature control1048708 Plasma etching1048708 Purely chemical etching by reactive ions isotropic1048708 Vapor phase etching1048708 Use of reactive gases XeF21048708 No drying needed
sticktion2008-spring-2003
DRIE (Deep RIE)
10487081048708 Alternating RIE and polymer deposition process for side wall protection and removal1048708 Etching phase SF6 Ar1048708 Polymerization process CHF3Ar forms Teflon-like layer1048708 Only 9 years after the Bosch process patent 1994
2008-spring-2003
-15 to 4 μmmin-selectivity to PR 100 to 1
Deposition processes
1048708 Chemical1048708 CVD (Chemical Vapor Deposition)1048708 Thermal Oxidation1048708 Epitaxy1048708 Electrodeposition
1048708 Physical1048708 PVD1048708 Evaporation1048708 Sputtering1048708 Casting
2008-spring-2003
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Etching Issues - Anisotropy
-Structural layer-Sacrificial layer
mask An-isotropic
Isotropic
2008-spring-2003
Etching Issues - Selectivity
Selectivity is the ratio of the etch rate of the target material being etched to the etch rate of other materials Chemical etches are generally more selective than plasma etches Selectivity to masking material and to etch-stop is important
2008-spring-2003
Bulk Micromachining
KOH etches silicon substrate1048708 V-grooves trenches1048708 Concave stop convex undercut1048708 (100) to (111) 1048708 100 to 1 etch rate1048708 Masks1048708 SiO2 for short period1048708 SixNy Excellent1048708 heavily doped P++ silicon etch stop
2008-spring-2003
Dry etching
1048708 RIE (reactive ion etching)1048708 Chemical amp physical etching by RF excited reactive ions1048708 Bombardment of accelerated ions anisotropic1048708 SF6 rarr Si CHF3 rarroxide and polymers1048708 Anisotropy selectivity etch rate surface roughness by gas concentration pressure RF power temperature control1048708 Plasma etching1048708 Purely chemical etching by reactive ions isotropic1048708 Vapor phase etching1048708 Use of reactive gases XeF21048708 No drying needed
sticktion2008-spring-2003
DRIE (Deep RIE)
10487081048708 Alternating RIE and polymer deposition process for side wall protection and removal1048708 Etching phase SF6 Ar1048708 Polymerization process CHF3Ar forms Teflon-like layer1048708 Only 9 years after the Bosch process patent 1994
2008-spring-2003
-15 to 4 μmmin-selectivity to PR 100 to 1
Deposition processes
1048708 Chemical1048708 CVD (Chemical Vapor Deposition)1048708 Thermal Oxidation1048708 Epitaxy1048708 Electrodeposition
1048708 Physical1048708 PVD1048708 Evaporation1048708 Sputtering1048708 Casting
2008-spring-2003
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Etching Issues - Selectivity
Selectivity is the ratio of the etch rate of the target material being etched to the etch rate of other materials Chemical etches are generally more selective than plasma etches Selectivity to masking material and to etch-stop is important
2008-spring-2003
Bulk Micromachining
KOH etches silicon substrate1048708 V-grooves trenches1048708 Concave stop convex undercut1048708 (100) to (111) 1048708 100 to 1 etch rate1048708 Masks1048708 SiO2 for short period1048708 SixNy Excellent1048708 heavily doped P++ silicon etch stop
2008-spring-2003
Dry etching
1048708 RIE (reactive ion etching)1048708 Chemical amp physical etching by RF excited reactive ions1048708 Bombardment of accelerated ions anisotropic1048708 SF6 rarr Si CHF3 rarroxide and polymers1048708 Anisotropy selectivity etch rate surface roughness by gas concentration pressure RF power temperature control1048708 Plasma etching1048708 Purely chemical etching by reactive ions isotropic1048708 Vapor phase etching1048708 Use of reactive gases XeF21048708 No drying needed
sticktion2008-spring-2003
DRIE (Deep RIE)
10487081048708 Alternating RIE and polymer deposition process for side wall protection and removal1048708 Etching phase SF6 Ar1048708 Polymerization process CHF3Ar forms Teflon-like layer1048708 Only 9 years after the Bosch process patent 1994
2008-spring-2003
-15 to 4 μmmin-selectivity to PR 100 to 1
Deposition processes
1048708 Chemical1048708 CVD (Chemical Vapor Deposition)1048708 Thermal Oxidation1048708 Epitaxy1048708 Electrodeposition
1048708 Physical1048708 PVD1048708 Evaporation1048708 Sputtering1048708 Casting
2008-spring-2003
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Bulk Micromachining
KOH etches silicon substrate1048708 V-grooves trenches1048708 Concave stop convex undercut1048708 (100) to (111) 1048708 100 to 1 etch rate1048708 Masks1048708 SiO2 for short period1048708 SixNy Excellent1048708 heavily doped P++ silicon etch stop
2008-spring-2003
Dry etching
1048708 RIE (reactive ion etching)1048708 Chemical amp physical etching by RF excited reactive ions1048708 Bombardment of accelerated ions anisotropic1048708 SF6 rarr Si CHF3 rarroxide and polymers1048708 Anisotropy selectivity etch rate surface roughness by gas concentration pressure RF power temperature control1048708 Plasma etching1048708 Purely chemical etching by reactive ions isotropic1048708 Vapor phase etching1048708 Use of reactive gases XeF21048708 No drying needed
sticktion2008-spring-2003
DRIE (Deep RIE)
10487081048708 Alternating RIE and polymer deposition process for side wall protection and removal1048708 Etching phase SF6 Ar1048708 Polymerization process CHF3Ar forms Teflon-like layer1048708 Only 9 years after the Bosch process patent 1994
2008-spring-2003
-15 to 4 μmmin-selectivity to PR 100 to 1
Deposition processes
1048708 Chemical1048708 CVD (Chemical Vapor Deposition)1048708 Thermal Oxidation1048708 Epitaxy1048708 Electrodeposition
1048708 Physical1048708 PVD1048708 Evaporation1048708 Sputtering1048708 Casting
2008-spring-2003
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Dry etching
1048708 RIE (reactive ion etching)1048708 Chemical amp physical etching by RF excited reactive ions1048708 Bombardment of accelerated ions anisotropic1048708 SF6 rarr Si CHF3 rarroxide and polymers1048708 Anisotropy selectivity etch rate surface roughness by gas concentration pressure RF power temperature control1048708 Plasma etching1048708 Purely chemical etching by reactive ions isotropic1048708 Vapor phase etching1048708 Use of reactive gases XeF21048708 No drying needed
sticktion2008-spring-2003
DRIE (Deep RIE)
10487081048708 Alternating RIE and polymer deposition process for side wall protection and removal1048708 Etching phase SF6 Ar1048708 Polymerization process CHF3Ar forms Teflon-like layer1048708 Only 9 years after the Bosch process patent 1994
2008-spring-2003
-15 to 4 μmmin-selectivity to PR 100 to 1
Deposition processes
1048708 Chemical1048708 CVD (Chemical Vapor Deposition)1048708 Thermal Oxidation1048708 Epitaxy1048708 Electrodeposition
1048708 Physical1048708 PVD1048708 Evaporation1048708 Sputtering1048708 Casting
2008-spring-2003
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
DRIE (Deep RIE)
10487081048708 Alternating RIE and polymer deposition process for side wall protection and removal1048708 Etching phase SF6 Ar1048708 Polymerization process CHF3Ar forms Teflon-like layer1048708 Only 9 years after the Bosch process patent 1994
2008-spring-2003
-15 to 4 μmmin-selectivity to PR 100 to 1
Deposition processes
1048708 Chemical1048708 CVD (Chemical Vapor Deposition)1048708 Thermal Oxidation1048708 Epitaxy1048708 Electrodeposition
1048708 Physical1048708 PVD1048708 Evaporation1048708 Sputtering1048708 Casting
2008-spring-2003
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Deposition processes
1048708 Chemical1048708 CVD (Chemical Vapor Deposition)1048708 Thermal Oxidation1048708 Epitaxy1048708 Electrodeposition
1048708 Physical1048708 PVD1048708 Evaporation1048708 Sputtering1048708 Casting
2008-spring-2003
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Thermal Oxidation
1048708 Silicon is consumed as the silicon dioxide is grown1048708 Growth occurs in oxygen andor steam at 800-1200 C1048708 Compressive stress1048708 ~2um films are maximum practically1048708 Simple easy process for electrical insulation intentional warpage etc
2008-spring-2003
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Thermal Oxidation
1048708 Oxidation can be masked with silicon nitride which prevents O2 diffusion
2008-spring-2003
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Chemical Vapor Deposition
Thermal energy to dissociate gases and deposit thin films on surfaces high productivity better step coverage low pressure (LPCVD) atmospheric pressure (APCVD) plasma enhanced (PECVD) horizontal vertical LPCVD pressures around 300mT (005 atmosphere) Moderate Temperatures 450oC SiO2 PSG LTO 580-650oC polysilicon 800oC SixNy ndash SiH4 + NH3 Very dangerous gases Silane SiH4 Arsine phosphine diborane AsH3 PH3 B2H6
2008-spring-2003
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Physical Vapor DepositionEvaporation
1048708 Evaporated metals in a tungsten crucible1048708 Aluminum gold Pt W1048708 Evaporated metals and dielectrics by electron-beam or resistance heating1048708 Typically line-of-sight deposition1048708 Very high-vacuum required to prevent oxidation load lock
E-beam evaporator
2008-spring-2003
Shadowing
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Physical Vapor Deposition ndash
Sputtering
1048708 Sputtered metals and dielectrics1048708 Argon ions bombards target1048708 Ejected material takes ballistic path to wafers1048708 Typically line-of-sight from a distributed source1048708 Requires high vacuum but low temperature
2008-spring-2003
Evaporation vs Sputtering
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Spin Casting
1048708 Viscous liquid is poured on center of wafer1048708 Wafer spins at 1000-5000 RPM for ~30s1048708 Baked on hotplates 80-500oC for 10-1000s1048708 Application of etchants and solvents rinsing1048708 Deposition of polymers sol-gel PZT
2008-spring-2003
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Deposition Issues - Compatibility
1048708 Thermal compatibility1048708 Thermal oxidation and LPCVD films1048708 Thermal oxidation and LPCVD vs polymers (meltingburning) and most metals (eutectic formation diffusion)1048708 Topographic compatibilitiy 1048708 Spin-casting over large step heights 1048708 Deposition over deep trenches-key hole
2008-spring-2003
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Deposition Issues - Conformality
1048708 A conformal coating covers all surfaces to a uniform depth1048708 A non-conformal coating deposits more on top surfaces than bottom andor side surfaces
Conformal Non-conformal Non-conformal
2008-spring-2003
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Photo 1 Cracking of sol-geldeposited PZT after 650C firing
Photo 2 Poor step coverage andhigh stress evolved at corner of a step
M Koo amp S Kim2008-spring-2003
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Lithography (Greek ldquostone-writingrdquo)
1048708 Pattern Transfer1048708 Appication of photosensitive PR1048708 Optical exposure to transfer image from mask to PR1048708 Remove PR - rarrbinary pattern transfer
2008-spring-2003
Top View Cross Section
Radiation
Mask
Photosensitive material
Substrate
Photosensitive material properties change only where exposed to radiation
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Photo resist
1048708 Spin coat phto-resist1048708 3000 ndash 6000 rpm 15-30 sec1048708 Viscosity and rpm determine thickness1048708 Soft bake -gtalignment -gtexposure1048708 Develop PR after exposure1048708 Hardbake
Positive Negative
a) Positive resist developer solution removes exposed material
b) Negative resist developer solution removes unexposed material
2008-spring-2003
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Photomasks
1048708 Master patterns to be transferred1048708 Types1048708 Photographic emulsion on soda lime glass (cheap)1048708 Fe2O3 or Cr on soda lime glass1048708 Cr on quartz (expensive for deep UV light source)1048708 Polarity 1048708 Light field mostly clear opaque feature1048708 Dark field mostly opaque clear feature
2008-spring-2003
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Types of Aligner
Contact Proximity Projection
2008-spring-2003
Reduction ratio 11Array of the same pattern rarr Stepper
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
IC manufacturing
This picture comes from an excellent introductory discussion about IC fabrication at icknowledgecom
3) Wafer sawn up on film frame
2) Wafer mounted on saw film frame
1a) Probed wafer
7) Trim and form
4a) Pick off good die
4b) dispense dic attach epo
xy
1b) Lead frame
Final package
6) Mold
14007
4c) Place die on the lead
frame
5) Wirebond from die to fra
me
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Double sidedAlignment
Mask alignment keysMask
Front side
Chuck
Wafer
Wafer alignment keys
Microscope objectives
Alignment marks
Features on wafer
Features on mask
Mask over wafer
Alignment marks used to register two layers wafer now ready to be exposed
2008-spring-2003
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Pattern transfer by lift-off
Subtractive Process
Photolithography
Additive Process
Pattern transfer by etching
Etch Deposit
Strip Resist
Pattern transfer by lift off
2008-spring-2003
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Bulk machining Square nozzle Pumping ink Piezoelectric ink jet
piezoelectric transducer
laminated metal plates
adhesive
Ink channel
diaphragm
Piezoelectric inkjet ndash how it works
Ink droplet
ink
Deflected diaphragm
Figure 42 Schematic illustrations of square and circular nozzles with their corresponding fabrication steps
2008-spring-2003
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
Ink jet printer ndash A quasi-MEMS case
1048708 Thermal jet by HP1048708 Superheat ink 250oC1048708 Peak pressure 14 MPa
2008-spring-2003
Refills in 50μs
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
2008-spring-2003
Thermal ink jet
orifice plate detailsubstrate detail (DeskJet 895C)
barrierheater ink
channel
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