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NCE N-Channel Enhancement Mode Power MOSFET · DS=V GS,I D=-250μA -0.7 -1 -1.3 V V GS=-10V, I D=-4.2A - 2227 mΩ Drain-Source On-State Resistance R DS(ON) V GS=-4.5V, I D=-4A - 25
CHAPTER 12 - LTH · CHAPTER 12 Exercises E12.1 (a) v GS = 1 V and v DS = 5 V: Because we have v GS < V to, the FET is in cutoff. (b) v GS = 3 V and v DS = 0.5 V: Because v
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20V P-Channel MOSFET · AON7407 20V P-Channel MOSFET General Description Product Summary VDS I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-4.5V) < 9.5m Ω R DS(ON) (at V GS =-2.5V)
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