Zni VZn First-principles modeling of defects and …dpc.nifs.ac.jp › dkato › MoD-PMI2019 ›...
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First-principles modeling of defects and hydrogen in oxides
Chris G. Van de WalleMaterials Department, University of California, Santa Barbara, USA
with Minseok Choi (Inha U., South Korea), Justin Weber (Intel), Anderson Janotti (U. Delaware), John Lyons (NRL)
Supported by ONR and SRC
International Workshop on Models and Data for Plasma-Material Interaction in Fusion Devices (MoD -PMI 2019) National Institute for Fusion Science, Tajimi, JapanJune 18-20, 2019
Zni
⊥c
VZn
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Van de Walle Computational Materials Groupwww.mrl.ucsb.edu/~vandewalle
Nitrides• Doping• Surfaces• Interfaces• Efficiency, loss
Ga
N N
First-principles calculationsDensity functional theory, many-body perturbation theory
Hydrogen as a fuel• Kinetics• Complex hydrides• Metal hydrides• Proton conductors
Oxides• Transparent
conductors• Dielectrics• Thermal barriers• Complex oxides
Quantum computing with defects
• Qubits• Single photon emitters
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Computational Approach
• Traditional density functional theory approach–Local or semi-local density approximation • Hard to interpret due to band-gap problem• Major problem when addressing defects or
surface/interface states• Our approach: Hybrid functional calculations–The HSE hybrid functional• A fraction of screened Hartree-Fock exchange• Accurate band gaps and defect levels• 120-atom supercell, 400 eV cutoff energy,
2x2x1 k-point mesh
J. Heyd, G. E. Scuseria, M. Ernzerhof, J. Chem. Phys 118, 8207 (2003).
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Defect Formation Energy
− +VO
Al2O3: VO Al2O3
+
½ O2
12
− +
O chemical potential
Determine defect concentrations: [D]=NO exp(-Ef/kT)
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Defect Formation Energy
− +VO
Al2O3: VO Al2O3
+
½ O2
12
− +e-
e− @ εF
εF+ +
O chemical potential
Determine defect concentrations: [D]=NO exp(-Ef/kT)
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−
Defect Formation Energy
− +VO
Al2O3: VO Al2O3
+
½ O2
12
− +e-
e− @ εF
εF-
O chemical potential
Determine defect concentrations: [D]=NO exp(-Ef/kT)
“First-principles calculations for point defects in solids”, C. Freysoldt, B. Grabowski, T. Hickel, J. Neugebauer, G. Kresse, A. Janotti, and C. G. Van de Walle, Rev. Mod. Phys. 86, 253 (2014).
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Defect Formation Energies
O-Rich
Al-Rich
• Plotted for extreme Al-rich and O-rich limits• Very wide range given by
ΔHf (Al2O3)= -17.36 eV•Actual chemical potential is somewhere in between
• Slope indicates charge• Kinks: charge transition levels• Information used to study fixed
charge and defect levels
Fermi level (eV)
Form
atio
n E
nerg
y (e
V)
example: VO
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Native point defects in α-Al2O3
Fermi level (eV) Fermi level (eV)
O-Rich Al-Rich
Form
atio
n E
nerg
y (e
V) VO
VAl
Ali
Oi
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Defect level positions in α-Al2O3
Conduction band
Valence band
Ener
gy (e
V) VOVAl Ali Oi
(0/2-)
(3+/+)
(+/0)
(2+/+)
(+/0)
(0/-)
(0/-)
(2-/3-)(-/2-)
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Ali0VO
0
e−
O
Al
VAl0
h+
Local geometry and charge densities
Oi0
VO
VAl
Ali
Oi
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Defect levels in κ- and α-Al2O3
κ: J. R. Weber, A. Janotti, and C. G. Van de Walle, J. Appl. Phys. 109, 033715 (2011).α: M. Choi, A. Janotti, and C. G. Van de Walle, J. Appl. Phys. 113, 044501 (2013).
Ener
gy (e
V)
VO VAl AliOi OAlAlOVOVAl Ali Oi
α-Al2O3κ-Al2O3 **GaN
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Hydrogen in Al2O3
Fermi level (eV)
Al-rich
Form
atio
n E
nerg
y (e
V)
HO
Hi
O-rich μO = -0.65 eV
O2 gas @ 270 oCand 1 Torr
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Hydrogen in Al2O3
Fermi level (eV)
Form
atio
n E
nerg
y (e
V)
HO
Hi
0 2 4 6 8
8
6
4
2
0
-2
-4
-6
+1 -1
+1 -1
• Hydrogen can easily incorporate into Al2O3
• Hydrogen occupies the interstitial site (Hi)• (+/-) impurity level near mid-gap
• Low migration energy• Hi can interact with native
defects or impurities in Al2O3
α-Al2O3
μO = −0.65 eV
O2 gas @ 270 oCand 1 Torr
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H complexes with Al vacancy in Al2O3
Fermi level (eV)
Form
atio
n E
nerg
y (e
V)
0 2 4 6
8
6
4
2
0
-2
-4
-6 κ-Al2O3
• Al vacancy: −3 charge state over most of Al2O3
band gapnegative fixed-charge center
• H captured by Al vacancy:• VAl+nH (n=1,3) complexes lower
the electrical charge of VAl
• VAl+3H complex is electrically inactive
VAl
Hi
VAl+H
VAl+2HVAl+3H
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Local geometry and charge density
Ga N
HC
GaAl0 NO
0
CAl0 Hi
0
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Gallium in Al2O3
Fermi level (eV)
Ga-rich
Form
atio
n E
nerg
y (e
V)
GaAl
GaO
Gai
O-rich μO = -0.65 eV
O2 gas @ 270 oC and 1 Torr
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Nitrogen in Al2O3
Fermi level (eV)
Al-rich
Form
atio
n E
nerg
y (e
V)
NO
NAl
Ni
O-rich μO = -0.65 eV
O2 gas @ 270 oC and 1 Torr
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Carbon in Al2O3
Fermi level (eV)
Al-rich
Form
atio
n E
nerg
y (e
V)
CO
CAl
Ci
O-rich μO = -0.65 eV
O2 gas @ 270 oC and 1 Torr
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Impurity Levels in Al2O3En
ergy
(eV)
GaN
Al2O3
CAl CiCONAl NiNO HOHi
(+1/-1)
(+1/-1)(0/-1)
(+1/0)
(-1/-2)
(+1/-1)
(+3/+1)
(+4/+3)
(0/-1)
(+3/0)
(+2/+1)
(0/-1)
(+1/0)
(-1/-2)
(0/-1)
(+2/0)
(+3/+2)
(+4/+3)
(0/-1)
(0/+1)
(+4/+3)
(+3/+2)
(0/-1)
EFermi
GaAl GaiGaO
(+2/+1)
(+1/-1)
(+3/+1)
(-1/-3)
(0/-1)
(+1/0)
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Diffusion of point defects
Side View
Top View
• Relevant for …– growth
» Defects ‘frozen in’ or not
– Ion implantation» Anneal damage
– Degradation– Irradiation
• Zinc interstitial:– Em=0.57 eV
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Annealing temperature of point defects
Eb (eV) T annealing (K)
Zni2+ 0.57 219
VZn2- 1.40 539
VO2+ 1.70 655
VO0 2.36 909
Oi0(split) 0.87 335
Oi2-(oct) 1.14 439
−Γ=Γ
kTEbexp0
1130 s10 −≈Γ 1s1 −≈Γ
A. Janotti and C. G. Van de Walle, Phys. Rev. B 76, 165202 (2007).
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Summary
• First-principles calculations provide qualitative insights and quantitative details for point defects
• Native defects and impurities in Al2O3
• References• Defects: C. Freysoldt, B. Grabowski, T. Hickel, J. Neugebauer, G. Kresse,
A. Janotti, and C. G. Van de Walle, Rev. Mod. Phys. 86, 253 (2014). • κ-Al2O3: J. R. Weber, A. Janotti, and C. G. Van de Walle, J. Appl. Phys. 109,
033715 (2011).• α-Al2O3: M. Choi, A. Janotti, and C. G. Van de Walle, J. Appl. Phys. 113,
044501 (2013). • ZnO: J. L. Lyons, J. B. Varley, D. Steiauf, A. Janotti and C. G. Van de Walle, J.
Appl. Phys. 122, 035704 (2017).• GaN: J. L. Lyons and C. G. Van de Walle, NPJ Comput. Mater. 3, 12 (2017).