EE330 Lab7 ReportName: Yue Zhang

ID: 733495763

Date: Feb. 29, 2012

Introduction:

In this lab, I have to become more familiar with the operation of the MOS transistor.

Then I develop methods for measuring key parameters of the transistor and investigate some

basic applications of the device.

Lab Processing:

Part 1: Measurement of MOSFET parameters using LabVIEW

MC14007:

Vdd=PIN14 AND Vss=PIN7

a) R=1000ohm, MC14007

X_Values ID Y_Values

1 0.000994 0.000000994 0.000996995

1.2 0.008993 0.000008993 0.002998833

1.4 0.03367 0.00003367 0.005802586

1.6 0.07553 0.00007553 0.0086908

1.8 0.130938 0.000130938 0.011442814

2 0.196916 0.000196916 0.014032676

2.2 0.271028 0.000271028 0.016462928

2.4 0.351864 0.000351864 0.018758038

2.6 0.438267 0.000438267 0.020934827

2.8 0.529354 0.000529354 0.023007694

3 0.624394 0.000624394 0.024987877

3.2 0.722988 0.000722988 0.026888436

3.4 0.82425 0.00082425 0.028709754

3.6 0.928541 0.000928541 0.030471971

3.8 1.035087 0.001035087 0.032172768

4 1.143972 0.001143972 0.033822655

4.2 1.25476 0.00125476 0.035422592

4.4 1.367183 0.001367183 0.036975438

4.6 1.48128 0.00148128 0.038487401

4.8 1.597087 0.001597087 0.039963571

5 1.714219 0.001714219 0.041403128

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.50

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

0.045

Series2

The line is not strange because when the MC14007 work a long time, the temperature will grow up so some value of MC14007 is changed.

b) Add more NMOS

X_Values ID Y_Values

1 0.00E+00 0.00E+00 0

1.2 0.00E+00 0.00E+00 0

1.4 0.00E+00 0.00E+00 0

1.6 4.37E-06 4.37E-09 6.61287E-05

1.8 0.000218 2.18E-07 0.000466905

2 0.00403 4.03E-06 0.002007486

2.2 0.022911 2.29E-05 0.004786544

2.4 0.061246 6.12E-05 0.007825982

2.6 0.115275 1.15E-04 0.01073662

2.8 0.180961 1.81E-04 0.013452175

3 0.255713 2.56E-04 0.015991029

3.2 0.337547 3.38E-04 0.018372452

3.4 0.424922 4.25E-04 0.020613636

3.6 0.517362 5.17E-04 0.022745593

3.8 0.61377 6.14E-04 0.024774382

4 0.713871 7.14E-04 0.026718364

4.2 0.817033 8.17E-04 0.028583789

4.4 0.922739 9.23E-04 0.030376619

4.6 1.030913 1.03E-03 0.032107834

4.8 1.141312 1.14E-03 0.033783309

5 1.253682 1.25E-03 0.035407372

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.50

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

Series2

PS: The detail of calculating on the next page.

Part 2: Measurement of MOSFET parameters using HP 4155 Parameter Analyzer

The parameters μCox , VT0, λ and γ are key parameters that characterize the MOS transistor along with the physical parameters W and L

The λ is 32.37μ

From the picture, I could find when the Vgs=5V, Vds change from the 0 to 4.9V, the value of ID. I choose the Vgs=4.2V, ID1=2.998mA and the Vgs=4.3V, ID2=3.1759mA, so VT0= 0.78V. PS: looking next page.

Part 3: CMOS Inverter

Two implementations of this inverter will be considered. In Case 1, M1 will be an NMOS device with W/L = 152/6 and in Case 2, M1 will be two paralleled NMOS devices with effective W/L = 304/6. In both cases, M2 will be a PMOS transistor available in the 4007 array which has dimensions W/L = 350/5.

Measure the transfer characteristics of the CMOS inverters of Case 1 and Case 2 and compare with results from theSPECTRE simulation from lab 3. Assume VDD = 5V and VSS = -5V. Repeat for VDD = 5V and VSS = 0V.

For digital logic applications, the CMOS inverter is typically operated from a single power supply with VDD = 5V and VSS = 0V. Measure the output voltage when Vin = 0V and when Vin = 5V. Compare with what is predicted from the transfer characteristicsmeasured above. Apply a 1 KHz square wave at the input that goes between 0V and 5V.

Display both the input and output on the oscilloscope at the same time. Comment on the performance.

Conclusion:

In this lab, we learn more familiar with the operation of the MOS transistor, to develop methods for measuring key parameters of the transistor, and to investigate some basic applications of the device.