Y. Furukawa Y. Mori T. Kataoka (Eds.)

Precision Science andTechnology for PerfectSurfacesProceedings of the 9th International Conference onProduction Engineering(9th ICPE)

Senri Life Science Center, Osaka, JapanAugust 29 - September 1,1999

UNIVERSITATSBIBLIOTHEKHANNOVER

TECHNISCHEINFORMATIONSBIBLIOTHEK

Sponsored by

The Japan Society for Precision Engineering (JSPE)

Supported by

The Commemorative Association for the Japan World Exposition (1970)

Published by

The Japan Society for Precision Engineering (JSPE)

JSPE Publication Series No.3

CONTENTS

PrefaceAddressOrganizing Committee, International Program Committee, SteeringCommittee, and Participating Societies

PRECISION SCIENCE AND TECHNOLOGY FOR PERFECT SURFACES

Activities on Perfect Surfaces in Osaka University. Ultra Precision MachiningResearch Center}'. Mori iii

Great Importance of Atomic Flatness of Substrate Surface for Very Advanced ULSIT. Ohmi. (). Xakamura. T. Ohkawa. and Y. Morita xxiii

PART ONE Achievements and Challenges in Optical Fabrication

Exotic Silicon Optical Elements at the SPrmg-8 3T. Ishikawa

Development of 3-Aspherical Mirror Optics for Extreme Ultraviolet Lithography//. Kinoshila. T Watanabc. J Daniel. 1). Bajuk. Y. Phuonov. and J. Wood 9

Characterization of Large Aperture and Ultra-High Quality Mirror forCiravitational Wave DetectorA'. Urda. A. i'eda. K. Uaseda. andM. Ohashi 19

Competence Centre "Ultraprecise Surface Figuring" in Germany/. Wi'inparttwr. F. Me/chert, and H. Kunzmann 29

Deterministic Processes for Manufacturing Perfect SurfacesH. Pollicovt'. S. Jacobs. M. Richard, and J. Ruckman 36

Ultra-precision Machining Systems: an Enabling Technology for Perfect SurfacesO. Chapman 42

Fabrication Technologies for "Perfect" OpticsA". II Becker 51

Aspherical Surfaces at 100 pm Accuracy: Results of Manufacturing and MetrologyM. Weiser. J. Froschke. H. Handschuh. M. Julich. M. Mayer, and G. Seitz 61

Development for the Alignment Procedure of Three-Aspherical-Mirror Optics5. Irie. A. Miyahuji. T. Watanahe. H. Kinoshita. K. Supisaki. T. Oshino. andK. Murakami 67

PART TWO Mechanical Processing

Ultra-High Speed Mirror Cutting of Oxygen-Free Copper with a Single PointDiamond ToolR. Yousefi and Y. Ichida 75

Optimization of Ultraprecision Cutting of Brittle MaterialsB. Zhang and A. Nakajima 81

Study on Diamond Turning of Single Crystal GermaniumO. Horiuchi and J. Ikeno 87

Effects of Cutting Edge Geometry on Brittle-Ductile Transition in SiliconMachiningJ. Yan, K. Syoji, and T. Kuriyagawa 92

Mirror Grinding of Silicon Wafer with EPD PelletH. Shibutani, J. Ikeno, O. Horiuchi, and K. Yano 98

Super Smooth Surface of X-ray Mirrors by ELID-lap Grinding and Metal-Resin Bonded WheelsN. Itoh, H. Ohmori, T. Kasai, and T. Karaki-Doy 103

Mirror Surface Finishing of CVD Diamond Film by ELID-GrindingK. Nishimura, S. Ibuki, T. Kono, K. Takeuchi, H. Ohmori, W. Lin, andA. Makinouchi 109

Ultraprecision Axis-asymmetrical Aspherical ELID Grinding with Form ErrorCompensationY. Yamagata, S. Moriyasu, S. Morita, H. Ohmori, and A. Makinouchi 115

Ultra-Smoothness Grinding of Silicon Carbide Ceramic with #140-Mesh GrainSize Diamond WheelH. Yasui, G. Yamazaki, Y. Hiraki, S. Sakamoto, M. Sakata, M. Saeki, andA. Hosokawa 120

Precision Grinding of Molding Die and Glass Molding in Micro OpticalComponentsH. Suzuki, Y. Komiyama, T. Tanioka, T. Kitajima, and S. Okuyama 126

Precision Optics Manufacturing Using Magnetorheological Finishing (MRF)D. Golini 132

Polishing of an Electroless Nickel-Plated Aspherical Lens MoldM. -Y. Yang and H. -C. Lee 138

PART THREE Machine Tools and Components

Development of Large Ultraprecision Grinding System with ELID for AsphericOptical Elements and ComponentsH. Ohmori, Y. Yamagata, S. Moriyasu, S. Morita, and W. Lin 147

Development and Characteristics of Fixed Abrasive Polishing Utilizing SmallGrinding Tools with ELID for Final Finish Process of Aspheric Optical ElementsC. Liu, H. Ohmori, W. Lin, N. Itoh, T. Kasai, and K. Horio 153

Manufacture of Fresnel Lens by Ultraprecision Machining Center Based onFriction-free Servo MechanismN. Sornsuwit, Y. Takeuchi, T. Kawai, K. Sawada, and T. Sata 159

An Ultraprecision Machine Tool with Active Control Aerostatic Guideways forImproving Quality of Machined SurfaceH. Mizumoto, S. Inoue, S. Arii, Y. Kami, and M. Yabuya 165

Ultraprecision Lap-Grinding with PhotodressingS. Moriyasu, S. Morita, Y. Yamagata, H. Ohmori, A. Makinouchi, and N. Itoh 171

Development of Discontinuous Grinding Wheel with Multi-Porous GroovesJ. Kim 175

Forming of Texture Surface Composed of Micro Dents Using Indenting ToolA. Inada, M. Masuda, and T. Miyamoto 181

Giant Magnetostrictive Positioner for Single Diamond Turning of SiliconSubstrateH. Eda, J. Shimizu, L. Zhou, Y. Takimoto, and A. Muroya 187

A Study on Run-out Error in Externally Pressurized Journal Gas BearingH. Tomita, K. Koizumi, and K. Konosu 193

Non-contact Handling System for Thin Plate Utilizing Electrostatic ForceF. Poh and T. Higuchi 199

PART FOUR Physical/ Chemical Processing

Development of Numerically Controlled EEM (Elastic Emission Machining)System for Ultraprecision Figuring and Smoothing of Aspherical SurfacesY. Mori, K. Yamauchi, K Sugiyama, K. Inagaki, S. Shimada, J. Uchikoshi,H. Mimura, T. Imai, and K Kanemura 207

Development of Numerically Controlled Plasma CVM (Chemical VaporizationMachining) System for Fabrication of Ultra Precision Optical DevicesY. Mori, K. Yamamura, and Y. Sano 213

Plasma Chemical Vaporization Machining with a Pipe Electrode for LargeOpticsH. Takino, N. Shibata, T. Kobayashi, H. Itoh, H. Tanaka, A. Koike, K. Nakano,K. Yamamura, Y. Sano, and Y. Mori 219

Slicing of Functional Materials by Plasma CVM (Chemical VaporizationMachining)Y. Mori, K. Yamamura, and Y. Sano 225

Plasma Jet Chemical Etching - a Tool for the Figuring of Optical PrecisionAspheresG. Boehm, W. Frank, A. Schindler, A. Nickel. H.J. Thomas. F. Bigl. andM. Weiser 231

Development of Ultra-Precision and Ultra-Clean Electro-Chemical ProcessingMethod Using Hydroxyl Ion in Ultrapure WaterY. Mori, H. Goto, K. Hirose. I. Kobata. and Y. Toma 237

Nanometer Precision (Reactive) Ion Beam Figuring of (Aspherical) OpticalSurfacesA. Schindler, T. Haensel. D. Flamm, A. Nickel. H. J. Thomas, andF. Bigl 243

Sub-Nanometer Polishing of Optical Surfaces by Ion Beam PlanarizationTechniqueR. Fechner, A. Schindler, T. Haensel, and F. Bigl 249

Ion Beam Processing of Nickel-Phosphor Alloy Film Deposited on the Al Plate byElectroless Plating MethodJ. Taniguchi, R, Kimura, C. Kageyama, and I. Miyamoto 255

Radiation-Resistant Optical Surface Fabricated by Ion Beam EtchingT. Kamimura, K. Nakai, M. Yoshimura, Y. Mori, T. Sasaki, H. Yoshida.M. Nakatsuka, M. Tanaka, S. Toda, M. Tanaka, and K Yoshida 261

UV Laser Ablative Figuring of Precise OpticsK.Tokumura, T. Jitsuno, M. Nakatsuka, G. Yoon, andH. Tamamura 267

Large Scale Single-Crystal and Extremely Smooth SiC Surface Produced byHe tero-Epitaxial Growth and its Applicability to Optical ElementsA Moronuki, A. Kakuta, and Y. Furukawa 273

A Study on the SiC Hetero-Epitaxial Growth Process on Silicon SubstrateA. Kakuta, H. Miyakoshi, N. Moronuki, and Y. Furukawa 279

Multilayer X-ray Optics for High Energy Third Generation Synchrotron Sources:the State of the ArtE. Ziegler, Ch. Mora we, O. Hignette, P. Cloetens, and R. Tucoulou 285

Deposition Shutter Control for Figured Multilayer FabricationT. Hatano, H. Umetsu. and'M. Yamamoto 292

PART FIVE Figure and Surface Testing

Nanometer Precision in Large Surface ProfilometryP. Z. Takacs 301

Ultra-Precise Scanning Technique for Surface Testing in the Nanometric Range/. Weingartner andM. Schulz 311

Study of Optimum Mounting Positions of Sensor Probes of Three-Point MethodX. Cui, O. Horiuchi, andJ. Ikeno 317

Laser Beam Straight Datum with Nanometric Accuracy -Analytical Estimationof Ultimate Brightness-es Uchikoshi, S. Shimada, K. Arimoto, and A. Komura 323

Sub-nanometer Interferometry for Aspheric Mirror FabricationG. E. Sommargren, D. W. Phillion, and E. W. Campbell 329

Development of Phase-Shifting Point Diffraction Interferometry Method withFiber Point SourcesY. Oshikane, K. Ikeda, T. Kataoka, K. Endo, and H. Inoue 336

Precise Surface Measurement by Local Sampling Phase Shifting InterferometryY. Otani, H. Mori, and T. Yoshizawa 342

Flatness Measurement by Moire Technique for Large Diameter WaferH. Fujiwara, Y. Kodera, Y. Otani, and T. Yoshizawa 348

A High-Precision Coordinate Measurement Machine for Aspherical OpticsM. Negishi, K. Watanabe, K. Matsusita, T. Kasahara, and K. Hosaka 354

Development of an Ultra-Precission 3D-CMM with the Repeatability ofNanometer OrderH. Shiozawa, and Y. Fukutomi 360

Development of Ultraprecision Contact-type Form Measuring Probe forOnmachine MeasurementS. Moriyasu, S. Morita, Y. Yamagata, H. Ohmori, J. Kato, I. Yamaguchi, andA. Makinouchi 366

Evaluation of Si Wafer Surface Using a New Apparatus for Measuring Particleof the Order of NanometerH. An, S. Sasaki, Y. Mori, T. Kataoka, K Endo, H. Inoue, andK Yamauchi 372

Measurement of Ultra Fine Particles on the Si Wafer Surface Using Laser LightScatteringH. Inoue, T. Kataoka, K. Endo, Y. Oshikane, T. Takemura, Y. Mori, H. An, andS. Sasaki 378

Analysis of Laser Scattered Defect Pattern for Optical Measurement of SiliconWafer Surface DefectsS. Takahashi. T. Miyoshi, and Y. Takaya 384

PART SIX Silicon Surface Processing

Qualities of 400mm-Diameter As-Sliced Wafers and Quality Changes ThroughWafer Shaping ProcessH. Oishi, K. Asakawa, andJ. Matsuzaki 393

Current CMP Process and Future NeedsS. Tanaka, M. Kishimoto, and Y. Itoh 399

High Rate Polishing of Silicon Surface using Plasma CVM with Rotary DrumElectrodeH. Takeuchi, T. Okuda, K. Nishikawa, Y. Hojyo, M. Kadono, T. Nukii,K. Yamamura, Y. Sano, and Y. Mori 405

Smooth Si(001) Surfaces Prepared by Glancing Angle Sputtering under Rotationof TargetK. Nakajima, N. Hairuddin, and K. Kimura 411

Flattening Si(001) Surface by Annealing in Molecular H2 AmbientT. Komeda and Y. Kumagai 415

Oxidation Control of Si(100) Surface in Heating-up ProcessK. Nishimura, S. Urabe, and M. Morita 421

Formation Process of Highly Reliable Gate Oxide Using Water Vapor GeneratorSystemO. Nakamura, T. Ohkawa, M. Nakagawa, and T. Ohmi 426

Water Vapor Generator Using Catalytic ReactorK. Kawada, Y. Minami, A. Morimoto, N. Ikeda, O. Nakamura, Y. Shirai, andT. Ohmi 432

Cr2O3 Passivated Gas Tubing System and Installation MethodM. Kitano, O. Nakamura, M. Nagase, Y. Shirai, and T. Ohmi 438

Precise Control of Gas Concentration Ratio in Process ChamberM. Nagase, O. Nakamura, M. Kitano, Y. Shirai, and T. Ohmi 444

Development of Anisotropic Dry Etching Method Using Laser-CollimatedFluorine Radical BeamM. Shimizu, H. Ohmi, K. Yasutake, K. Yamane, R. Tanaka, A. Takeuchi,H. Kakiuchi, K. Yoshii, and Y. Mori 450

PART SEVEN Surface Cleaning and Wet Processing

Advanced Cleaning Strategies for Ultra-clean Silicon SurfacesM. Heyns, T. Bearda, I. Cornelissen, S. De Gendt, L. Loewenstein, P. Mertens,S. Mertens, M. Meuris, M. Schaekers, I. Teerlinck, R. Vos, and K. Wolke 459

Dissolution of Metal into Gas Controlled Ultra Pure WaterM. Toda, K. Shishido, K. Akuto, and T. Ohmi 469

Particle Removal Effect of Hydrogenated Ultrapure Water with MegasonicIrradiationJ. Ida, H. Morita, and T. Ohmi 475

Infrared Monitoring of Hydrocarbons on 300-mm Si WafersM. Endo, H. Yoshida, Y. Maeda, N. Miyamoto, and M. Niwano 480

Scanning Tunneling Microscopy Observations of Hydrogen Terminated Si(001)Surfaces after Wet CleaningK. Endo, K Arima, T. Kataoka, Y. Oshikane, H. Inoue, K. Koba, H. Nakahama,and Y. Mori 485

Flattening of Si(lll) Surface in Oxygen-free Water and Alkaline SolutionsH. Fukidome andM. Matsumura 491

Oxidation and Hydrogen Termination of Si Surface in NH4F SolutionY. Kondo, Y. Kimura, andM. Niwano 495

Precise Wet Etching for Large-Sized WaferM. Miyashita, T. Ohmi, T. Yabune, and H. Kikuyama 501

The Control of Etching Rate for Various SiO2 FilmsT. Kezuka, M. Itano, and T. Ohmi 507

Room Temperature Photoresist Physical Stripping TechnologyS. Ojima, T. Jizaimaru, S. Omae, and T. Ohmi 513

PART EIGHT Thin Film Technology

Optimization of Interfaces in Thin Film Transistors and Thin Film Solar Cellsusing Hot Wire Chemical Vapor DepositionR. E. I. Schropp, B. Stannowski, and J. K. Rath 521

Improved Controllable Range of the Optical and Electrical Properties ofAmorphous Silicon for Solar CellsY. Hishikawa, H. Tarui, andS. Kiyama 531

High-Rate Deposition of Amorphous Si Thin Films by Atmospheric PressurePlasma CVDY. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, Y. Domoto, H. Tarui, andS. Kiyama 537

High-speed Patterning of Integrated-Type a-Si Solar Cell Sub modules byPlasma CVMS. Nakano, Y. Domoto, H. Tarui, S. Kiyama, Y. Sano. K. Yamamura, and Y. Mori 543

Plasma Treatment Effect on the Off Current Characteristics of an a-Si TFTS. Yabuta, S. Yamakawa, A. Ban, Y. Kataoka, M. Okamoto, H. Kato,M. Katayama, and Y. Ishii 549

Smart Cut®: A Highly Productive SOI Manufacturing TechnologyK. Mitani and N. Tate 555

Gate Oxide Integrity and Buried Oxide Integrity of ADVANTOX™190M. Takamatsu, M. Kainuma, M. Sudou, T. Nakai, H. Emori, and Y. Shimanuki 561

Characterization of Electrically Active Defects at SOI-BOX Interface on High-Dose SIMOX WafersT. Ushiki, K. Kotani, T. Funaki, K. Kawai, and T. Ohmi 567

The Application of the Protective Oxidation and Hydrogen Termination forRelatively Low Temperature Epitaxial GrowthM. Mayusumi, M. Imai, S. Nakahara, and K. Inoue 573

Low-Temperature Growth of Ultra-Thin Silicon Nitride Films for ExtendingScaling Limit of Silicon OxideK. Sekine, Y. Saito, M. Hirayama, and T. Ohmi 579

Advanced Shower Plate Applicable To Radial Line Slot Antenna MicrowaveExcited Plasma ChamberA. Morii, M. Hirayama, and T. Ohmi 584

Control of Transformation Timing of Titanium for VLSI ProcessN. Mizuno, M. Shimizu, C- Lavoie, and C. CabralJr. 590

Deposition of ZnO Film by Using an Atmospheric Pressure Cold PlasmaGeneratorH. G. Teong, Y. Suzaki, T. Shikama, O. Tanaka, T. Kajitani, and H. Koinuma 596

Effect of In-situ He Ion Beam Irradiation on the ITO Films Prepared by IBSMethodY. Suzaki, T. Shikama, O. Tanaka, T. Kajitani, H. Higuchi, and S. Nakamura 601

Ion Beam Sputter Deposition for Growth of Stoichiometric Thin Films of TiNiShape Memory AlloyS. T. DaviesandK. Tsuchiya 606

A Study of the Submicron-Scale Roughening and Smoothing of SemiconductorSurfaces during Ion SputteringF. Frost, A. Schindler, D. Hirsch, and F. Bigl 612

Effects of Argon and Nitrogen Partial Pressure on Internal Stress, Resistivityand Structure of Reactive Sputtered TiN FilmsS. Inoue, H. Takata, andK. Koterazawa 618

Doping of Single Crystalline A1N Thin Films Grown on Si(lll) by Plasma-Assisted MBEA, Takeuchi, M. Ono, K. Yasutake. H. Kakiuchi, and K. Yoshii 624

Creation of Mono-Velocity Neutral Atomic BeamH. Ohmi, K. Yasutake, M. Shimizu, T. Yasukawa, A. Takeuchi. H. Kakiuchi,K. Yoshii, M. Umeno, and Y. Mori 630

PART NINE Atomically Controlled Surface Processing

Nono-Structure Fabrication by Growth Mode ControlY. Aoyagi, H. Isshiki, M. Ishii, and S. Tanaka 639

Strain Engineering of Nanoscale Structures in the Ge/Si SystemF. Liu andM. G. Lagally 648

Mechanical and Current-Assisted Manipulation of Atoms and Molecules using aLow Temperature Scanning Tunneling MicroscopeK. H. Rieder, G. Meyer, L. Bartels, J. Repp, and S. W. Hla 658

Structure Fabrication and Property Measurement on the Nanoscale by STM-Based New MethodsM. Aono 665

AFM Nano-Lithography Using a Current-Controlled Exposure System and aMultilayer Resist SystemM. Ishibashi, S. Heike, N. Sugita, H. Kajiyama, and T. Hashizume 671

Nanometer-Scale Machining of Single-Crystal Silicon Using an Atomic ForceMicroscopeY. Ichida, R. Sato, and K Takahashi Gil

Machining of Small Diametric Deep Hole on Si PlateY. Kita, K. Yoshida, and Y. Miwa 683

Collision Induced-Deposition of N2 on Ni(100) Surface Studied with FTIRT. Takaoka, M. Terahara, and I. Kusunoki 689

Chemically-Assisted Desorption of Hydrogen Atoms on Hydrogen-Terminated SiSurfaceY. Morita, R. Hasunuma. andH. Tokumoto 693

Control of Atomic Defects of TiC by Its Chemical ActivityH. Kuramochi, K. Takami, S. Otani, A. Saito, Y. Kuwahara, M. Aono, andY. Mori 699

Ordering and Reaction of Diacetylene Molecules on a Graphite Surface Observedwith STMY. Okawa andM. Aono 705

A Scanning Tunneling Microscope Tip Made of an Ionic Conductor as a MetalAtom Source to Fabricate NanostructuresK. Terabe. T. Nakayama, N. Iyi. andM. Aono 711

Formation of Nanostructures on Si(110) Surfaces with the Interaction of Cr,0MoleculesM. Yoshim ura and K. Ueda 717

Highly Smooth Surface of Perovskite-Type Oxide Thin Flims Grown byAdvanced Laser Ablation MethodM. Sugiura, K. Uragou, M. Tachiki. Y. Furukawa, M. Nomura, and T. Kobayashi 722

Low Temperature Scanning Tunneling Microscopy Study on the Growth andAtomic Manipulation of NaCl on Vicinal Copper SurfacesG. Meyer, J. Repp, S. Zophel, and K. H. Rieder 728

Nuclei-Step-Flow Growth of Diamond Films by Plasma-Assisted Chemical VaporDeposition MethodT. Hosomi, T. Maki, and T. Kobayashi 733

Characterization and Fabrication of Hydrogen-Terminated Diamond SurfaceProduced by Microwave Plasma CVD MethodT. Takami, I. Kusunoki, M. Nishitani-Gamo, and T. Ando 739

Effect of Low Energy Ions on Structure and Mechanical Properties of DLC FilmsFabricated at Room Temperature by ECR-CVDY. Domoto, H. Yagi, H. Tarui, and S. Kiyama 745

PART TEN Surface Characterization by Beam Techniques

Multi-method Surface Analysis in the lOnm RangeE. Bauer, T. Schmidt, and T. Duden 753

Ultra Trace Element Analysis in Microelectronics with SR-TXRFF. Comin and P. Mangiagalli 763

Atomic-Scale Surface Morphology of Ultrathin Thermal Oxide Formed onSi(100) SurfaceH. Nohira, M. Fujimura, K. Inoue, and T. Hattori 769

Initial Stage of Oxidation of Si(001)-2xl Surface and Amorphous Si SurfaceStudied by X-Ray Photoelectron SpectroscopyY. Harada, M. Niwa, T. Nagatomi, and R. Shimizu 115

Determination of the Energy Distribution of Interface States in the Si ForbiddenGap by XPS Measurements under BiasA. Asano, T. Kubota, Y. Nishioka, and H. Kobayashi 781

Newly Applied X-ray Standing Wave Analysis to the YSZ CrystalA.Saito, Y. Kuwahara, M. Aono, and T. Matsushita 787

Development of Evaluation Method for Ultra Precision Machined Surfaces byPhoto-Reflectance SpectraK. Inagaki, K. Tahara, Y. Fujimoto, K. Endo, K. Sugiyama, K. Hirose, and Y. Mori 792

Structural Study of Ni/YSZ(001) by Coaxial Impact-Collision Ion ScatteringSpectroscopyA. Saito, K. Yamasaki, Y. Kuwahara, andM. Aono 796

Hydrogen Analysis on Solid Surfaces by Scanning T-O-F Type Electron-Stimulated Desorption SpectroscopyK. Ueda, K. Ishikawa, M. Yoshimura, and Y. Sakai 802

Fabrication and Characterization of a Precisely Engineered Surface forBiomedical ApplicationsA. Ektessabi, M. Hamdi, S. Hakamata, A. Wennerberg, and Y. Kakino 807

PART ELEVEN Surface Characterization by SPM Techniques

New Strategies for Fabricating Ordered and Anisotropic Organic Monolayersand Thin Films on Semiconductor SurfacesR. J. Hamers, J. S. Hovis, andM. D. Ellison 815

ID and 2D Behavior of Xe and CO on Cu(lll)J. -Y. Park, S. -J. Kahng, U. D. Ham, Y. Kuk, K. Miyake, K. Hata, andH. Shigekawa 822

Micro Four-point Probe: a Novel Tool for Measuring the Conductivity of Surfacesat the Micron ScaleP. Bcfiggild, T. M. Hansen, C. L. Petersen, F. Grey, T. Hassenkam, T. Bj0rnholm,I. Shiraki, andS. Hasegawa 832

Visible Light Emission from Silver Atom Clusters Formed on a Deuterium-terminated Si(001) SurfaceM. Sakurai, C. Thirstrup, S. Qiao, andM. Aono 837

Scanning Tunneling Microscopy/Spectroscopy Observations of Metal AdsorbedSi(001)2xl SurfacesK. Endo, K. Arima, T. Kataoka, Y. Oshikane, H. Inoue, K. Koba, K. Hirose, andY. Mori 843

Development of X-ray Microanalysis by Using STM ProbeY. Mori, K Tsutsumi, K Endo, M. Iwatsuki, and T. Kataoka 849

Temperature Dependence of Surface Diffusion and Tetramer Formation of SiAtoms on Si(l 11)7x7 Surface Studied by Variable Temperature STMT. Sato, S. Kitamura, andM. Iwatsuki 854

Length Measurement with Sub-nanometer Resolution Using Regular Crystal-line Lattice and Scanning Tunneling MicroscopeM. Aketagawa, K Takada, Y. Oka, N. Chihaya, and T. Hashida 860

Nanometer-Scale Characterization of Electrical Degradation in Ultrathin SiO2

Films Using a Scanning Probe TechniqueH. Watanabe, T. Baba, andM. Ichikawa 865

Perfect Control of Hydrogen-Terminated Silicon Wafer SurfaceH. Sakaue, S. Fujiwara, H. Nakanishi, S. Shingubara, and T. Takahagi 871

Observation of Oxidation on Hydrogen-Terminated Si(ll l) Surface by STM/AFM at Atmospheric PressureS. Yudate, N. Okada, T. Kanashima, M. Okuyama, and K. Nishihara 877

Atomic Resolution Imaging of Al/Si(lll) Surface by Noncontact Atomic ForceMicroscopeS. Orisaka, T. Minobe, K. Makimoto, Y. Sugawara. andS. Morita 883

Development of Multipurpose SFMH. -K. Kweon, W. Gao. and S. Kiyono 887

Characterization of Subsurface Damage Made by an Atomic Force MicroscopeScratch Machining on an Optical-fiber End PlaneS. Matsui, F. Ohira, S. Umemura. K. Matsunaga, and K. Koyabu 893

Measurement of Mechanical Properties of Carbon Nanotubes by Direct Handlingin Scanning Electron MicroscopeS. Akita, H. Nishijima, and Y. Nakayama 899

Development of a High Sensitive Probe for Scanning Near-field OpticalMicroscope with a Micro CavityH. Nakagawa, T. Kataoka, K. Endo,and Y. Oshikane 905

PART TWELVE Modeling and Simulation of Surface Processing

First-Principles Molecular-Dynamics Simulations Aiding Creation of PerfectSurfacesK. Hirose 913

First-Principles Molecular-Dynamics Simulations of Electro-Chemical EtchingProcess in Ultrapure WaterH. Goto, K. Hirose, Y. Mori, K. Sugiyama, K Inagaki. I. Kobata, and H. Toyota 923

First-Principles Molecular-Dynamics Calculation for Evaluating SeparationEnergy and Force between Powder and Work Surfaces in EEM(Elastic EmissionMachining) ProcessK. Inagaki, K. Yamauchi, K. Yamamoto, M. Sugimoto, H. Toyota, K. Sugiyama,K Hirose, and Y. Mori 929

Reaction of O2 Molecules at Si(001) Surface: Oxidation and EtchingT. Uchiyama, T. Uda, and K. Terakura 935

First-Principles Molecular-Dynamics Simulation and STM Observation ofDissociative Adsorption Process of F2 and Cl2 on the Si(001) SurfaceH. Okada, R. Okunishi, K. Endo, H. Goto, K. Inagaki, K. Sugiyama, H. Toyota.K. Hirose, and Y. Mori 941

A First-Principles Study on Initial Processes of a Ni Adatom on the Si(001)SurfaceS. Higaiand T. Ohno 947

Transferable Tight Binding Parameters of Aluminum and Their Applications onSurface RelaxationsS. R. Nishitani, S. Ohgushi, M. Aoki, and H. Adachi 953

Theoretical Investigation of Diffusion of Ge Adatoms on H/Si(100) SurfaceT. Ohno andJ. Nara 959

One-Dimensional Migration of Ga Atoms on a H-Terminated Si SurfaceY. Suwa, T. Hitosugi, S. Matsuura, S. Watanabe, S. Heike, T. Hashizume, andT. Onogi 965

Simulation of Laser Ablation Process of Silicon with Three DimensionalMolecular DynamicsE. Ohmura, Y. Ishizaka, K. Watanabe, I. Fukumoto, and I. Miyamoto 971

Modified Molecular Dynamics Simulation of Ablation Phenomena with UltrafastLaserE. Ohmura. I. Fukumoto, and I. Miyamoto 977

Wettability and Atomic Diffusibility of Liquid Metals on Solid SurfacesH. Toyota. T. Ide, H. Yagi, H. Goto, K. Endo, K. Hirose, and Y. Mori 983

Simulation of Wear Process on Tool Rake Face by Renormalization Group MDN Takezawa, T. Inamura, andS. Iwase 989

Dynamic Analysis of Mechanisms using Motor Algebra and Graph TheoryM. Jo and T. Sasaki 995

Law of Wearless Dynamic Friction in Sub-Micrometer Size Mechanisms andActuators Explored with a Simplified MD ModelK. Hayashi, A. Maeda, M. Yasuda, S. Abe, K. Haraoka, K Tsutsui, and T. Kawai 1001

Molecular Dynamics Study of Friction Like PhenomenaK. Haraoka, K. Tsutsui, K. Hayashi, K. Shida, and T. Kawai 1007

Molecular Dynamics Simulation of Friction and Wear Process with a SimpleModel on Tool Stiffness EffectJ. Shimizu, H. Eda, L. Zhou, andM. Jo 1013

Molecular Dynamics Analysis on Microstructure of Silicon Surfaces Finished byMechanical ProcessesH. Tanaka, L. Zhang, and S. Shimada 1019

Molecular Dynamics Study of Sliding Mechanisms in ft -Silicon NitrideS. Ogata. H. Kitagawa. N. Hirosaki. andH. Yasumoto 1025

First-Principles Study of the Strength and Fracture of Interfaces in SiCM. Kohyama 1031

Development of Ab Initio Molecular-Dynamics Simulation Program Based onReal-Space Finite-Difference MethodT. Ono. S. Tsukamoto, K. Inagaki, K. Sugiyama. K. Hirose. and T. Nakamura 1037

First-Principles Molecular-Dynamics Simulation Based on Real-Space Finite-Difference Method: Dissociation of H2O MoleculeN. Sumida, I. Kobata, T. Ono. S. Tsukamoto. K. Inagaki. K. Sugiyama. andK. Hirose 10 43

Ab Initio Monte Carlo Simulation: Stable Structure of Carbon ClusterK. Toda. T. Ono. K. Inagaki, K. Sugiyama. and K. Hirose 1017

Development of Ab Initio Molecular-Dynamics Simulation Program forAnalyzing Semi-infinite SystemS. Tsukamoto, Y. Fujimoto. K. Inagaki. M. Sakamoto. K. Sugiyama. and K. Hirose 1051