1 Understanding PSAT Results Boonsboro High School PSAT Information Night.
WP483P6050UH 50WRFGaNPowerTransistorWP483P6050UH 50WRFGaNPowerTransistor Product Features • Up to...
7
WP483P6050UH 50W RF GaN Power Transistor Product Features • Up to 4 GHz Operation • 12.67dB Small Signal Gain at 3.6 GHz • 48.85dBm Typical P sat at 3.8 GHz • 54.94 % Efficiency at P sat at 3.8 GHz • 48 V Operation Applications • Broadband Amplifiers • Cellular Infrastructure • Test Instrumentation • WiMAX, LTE, WCDMA, GSM • Radar application Absolute MaximumRatings Parameter Drain-Source Voltage Symbol V DSS Rating 160 Units Volts Conditions 25˚C Gate-to-Source Voltage 3 V GS -10,+2 Volts 25˚C Storage Temperature 3 T STG -65,+150 ˚C Operating Junction Temperature 1,3 T J 225 ˚C Maximum Forward Gate Current 3 I GMAX 30 mA 25˚C Maximum Drain Current 2 I DMAX 1 A Id@ Vd =10V, Vg= 1V Soldering Temperature 3 T S 245 ˚C Storage Temperature 3 T STG -65,+150 ˚C Note: 1. Continuous use at maximum temperature will affect MTTF. 2. Current limit for long term, reliable operation 3. After additional updates WWW.WAVEPIA.COM
Transcript of WP483P6050UH 50WRFGaNPowerTransistorWP483P6050UH 50WRFGaNPowerTransistor Product Features • Up to...
WP483P6050UH50W RF GaN Power Transistor
Product Features
• Up to 4 GHz Operation
• 12.67dB Small Signal Gain at 3.6 GHz
• 48.85dBm Typical Psat at 3.8 GHz
• 54.94 % Efficiency at Psat at 3.8 GHz
• 48 V Operation
Applications
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM
• Radar application
AbsoluteMaximumRatings
Parameter
Drain-Source Voltage
Symbol
VDSS
Rating
160
Units
Volts
Conditions
25˚C
Gate-to-Source Voltage3 VGS -10, +2 Volts 25˚C
Storage Temperature3 TSTG -65, +150 ˚ C
Operating Junction Temperature1,3 TJ 225 ˚ C
Maximum Forward Gate Current3 IGMAX 30 mA 25˚C
Maximum Drain Current2 IDMAX 1 A Id@ Vd =10V, Vg= 1V
Soldering Temperature3 TS 245 ˚ C
Storage Temperature3 TSTG -65, +150 ˚ C
Note:
1. Continuous use at maximum temperature will affect MTTF.
2. Current limit for long term, reliable operation
3. After additional updates
WWW.WAVEPIA.COM
Note:
1. Measured on wafer prior to packaging.
2. Scaled from PCM data.
DC Characteristics1(TC = 25˚C)
Parameter
Gate Threshold Voltage
Symbol
VGS(th)
MIN TYP
-3.1
MAX Units
VDC
Conditions
VDS = 10 V, ID = 1 mA
Gate Quiescent Voltage VGS(Q) -2.69 VDC VDS = 48 V, ID = 180 mA
Saturated Drain Current2
IDS 1000 mA/mm VDS = 10 V, VGS = 1 V
Drain-Source Breakdown Voltage VBR 160 VDC ID = 1 mA/mm
RFCharacteristics(TC=25˚C, F0=3.6GHz unlessotherwisenoted)
Note:
1. Drain Efficiency = POUT / PDC
Parameter Symbol MIN TYP MAX Units Conditions
Power Gain GSat 9.8 dBVDD = 4 8 V, IDQ = 180 mA, Pulse Width = 100
usec, Duty Cycle = 10%
Saturated Output Power PSAT48.83 dBm
VDD = 4 8 V, IDQ = 180 mA, Pulse Width = 100
usec, Duty Cycle = 10%
Pulsed Drain Efficiency1
η 50.2 %VDD = 4 8 V, IDQ = 180 mA, Pulse Width = 100
usec, Duty Cycle = 10% @ Psat
WWW.WAVEPIA.COM
Pulse Signal Performance (Tc=25℃, Measured in the test board amplifier circuit)
VDD = 48 V, IDQ = 180mA, Pulse Width = 100μsec, Duty Cycle = 10%
WWW.WAVEPIA.COM
WCDMAPerformance (Tc=25℃, Measured in the test board amplifier circuit)
VDD = 48V, IDQ = 180 mA, WCDMA 1FA, PAPR 10.5dB
WWW.WAVEPIA.COM
WWW.WAVEPIA.COM
SmallSignalPerformance(Tc=25℃,Measuredinthetestboardamplifiercircuit)
VDD = 48 V, IDQ = 180 mA
Demonstration board
WWW.WAVEPIA.COM
Reference Value Description Package Manufacturer
C2 100nF Ceramic Capacitor 1608 SAMSUNG
C3,C6 100pF Ceramic Capacitor 1608 SAMSUNG
C5 10nF Ceramic Capacitor 1608 SAMSUNG
C7 10pF Ceramic Capacitor 1608 SAMSUNG
C4 1nF Ceramic Capacitor 1608 SAMSUNG
C17 0.4pF High Q Capacitor 2012 Johanson
C18 1.0pF High Q Capacitor 2012 Johanson
C16 3.3pF High Q Capacitor 2012 Johanson
C9,C10 100pF High Q Capacitor 2012 Johanson
C8 10pF High Q Capacitor 2012 Johanson
C11,C12 220pF High Q Capacitor 2012 Johanson
C13 220nF High V Capacitor 3225 Johanson
C14 470nF High V Capacitor 4532 Johanson
C1 22uF/16V Tantalum Capacitor 3528 SAMSUNG
C15 47uF Electrolytic Capacitor
R1 51Ω Chip Resistor 1608 SAMSUNG
R2 10Ω Chip Resistor 1608 SAMSUNG
R3 300Ω Chip Resistor 2012 SAMSUNG
Package Dimensions
#1301, 557, Dongtangiheung-ro,
Hwaseong-si , Gyeonggi-do,
South Korea
Tel : 82-31-8058-3374
82-31-8058-3384
Fax : 82-31-8058-3302
E-mail : [email protected]
Website: www.wavepia.com
Partnumbercode
W P 48 3P 6050 U H
Frequency (GHz)
S (Surface),H (Screw Hole)
M (Matched),U(Unmatched)
Power(Watt)
Drain Voltage (DC)
<WP483P6050UH>
<WP483P6050US>
![A 15 GHz Bandwidth 20 dBm PSAT Power Amplifier with ......-20 0 20 40 Frequency [GHz] dB] S21 S12 S11 S22 Large Signal Performances at 65GHz P SAT≈20dBm, P 1dB≈16dBm, PAE≈22%](https://static.fdocuments.us/doc/165x107/6125b92ca9a0936171190439/a-15-ghz-bandwidth-20-dbm-psat-power-amplifier-with-20-0-20-40-frequency.jpg)
