WORKSHOP PROCEEDINGS

EW MOVPE VIII

P R A G U E

June 8-11,1999

8th European Workshop on Metal-Organic

Vapour Phase Epitaxy

and Related Growth Techniques

organised by the

Institute of Physics, Academy of Sciences of the Czech RepublicUB/TIB Hannover123 051 908

89

Scientific Programme

Session W1MGaN and Related Materials

I Structural and electrical properties of GaN laterally overgrown on GaN/Al2O3 substrates 3H. Marchand, J.P. Ibbetson, P.T. Fini, X.H. Wu, Y. Golan, R. Vetury, G. Parish,P. Kozodoy, E.J. Tarsa, S. Keller, J.S. Speck, S.P. DenBaars, U.K. Mishra

1 Growth and Characterization of high-efficiency InGaN MQW Blue and Green LEDsfrom large-scale production MOCVD Reactors 7

C. A. Tran, R. F. KarlicekJr., M. G. Brown, I. Eliashevich, A. Gurary, andR. Stall

2 X-ray Analysis of (In,Ga)N Structures grown by MOCVD 11J. Biasing, A. Krost, M. Liinenburger, H. Protzmann, M. Heuken

3 Application of GaN single crystals for III-N epitaxy 15P. Prystawko, M. Leszczynski, J. Lehnert, E. Frayssinet, T. Suski, P. Perlin, H. Teisseyre,G. Nowak, I. Grzegory, M. Bockowski, S. Porowski, M. Tlaczala, R. Korbutowicz,M. Panek, B.Beaumont

4 Growth and characterization of InGaN/GaN multiple quantum well structures 19F. Huet, M.A. di Forte-Poisson, A. Romann, M. Tordjman, J. diPersio

5 OMVPE-based Epitaxial Lateral Overgrowth for GaN LEDs 23K. Jacobs, W. Van der Stricht, I. Moerman, P. Demeester, J. De Naeyer, S. Verstuyft,P. Vandaele , D.M. Tricker, A. Amokrane, S. Dassonneville, B. Sieber, E.J. Thrush

6 The influence of growth conditions on the electrical properties of Magnesium-dopedGaN grown by MOVPE 27B.Kuhn, M. Welsch, M. Kessler, F. Scholz

7 Growth Optimisation of GaN/GalnN/AlGaN Interfaces in LP-MOVPE 31J. Off, Jin Seo Im, A. Hangleiter, F. Scholz

8 Microscopic characterization of MOCVD-grown InGaN Structures by spatially, spectrally,and time resolved cathodoluminescence 33J. Christen, A. Krost, D. Rudloff, T. Riemann, M. Liinenburger, H. Protzmann, M. Heuken

9 Analysis of indium incorporation efficiency during Metal-Organic Vapor PhaseEpitaxy of InGaN 35R.A. Talalaev, E.V. Yakovlev, S.Yu. Karpov, Yu.N. Makarov, C. Kirchner, M. Kamp

10 Growth and characterisation of InGaN-GaN MQW structures for high-brightness UV LEDs 39A. Ramakrishnan, H. Obloh, U. Kaufmann, M. Kunzer, M. Maier, N. Herres, S.Mueller,P. Schlotter, J. Wagner

11 Incorporation of As in GaN layers during MOCVD growth 41A.F. Tsatsul'nikov, B.Ya. Ber, A.P. Kartashova, Yu.A. Kudravtsev, N.N. Ledentsov,W. V. Lundin, M. V, Maximov, A. V. Sakharov, A.S. Usikov, Zh.I. Alferov, A. Hoffmann,D.Dimberg

XI

12 Catalytic effects in low-temperature GaN nucleation layers deposition by MOVPE 45W. V. Lundin, A.S. Usikov, A. V. Sakharov, V. V. Ratnikov

13 MOVPE growth of strain compensated Alo.15Gao.g5N/GaN Bragg mirror on Alo.osGao.92Nbuffer layer 49W.V. Lundin, A.S. Usikov, I.L. Krestnikov, A.V. Sakharov, A.F. Tsatsul'nikov,M.V. Baidakova, D.V. Poloskin, V.V. Tret'iakov, N.N. Ledentsov

14 Growth and characterization of GaN and AlGaN layers doped with Si 53W. V. Lundin, N.M. Shmidt, A.S. Usikov, A.Kryzhanovskii, D. V. Poloskin, V. V. Ratnikov,A.F.Sacharov, A.N. Titkov, V. V. Tretyakov

15 Characterization of the InGaN/GaN heterostructures grown by MOCVD in argon ambient 57AS. Usikov, W. V. Lundin, A. V. Sakharov, V.A. Semenov, I.L. Krestnikov, M. V. Baidakova,Yu.G. Musikhin, V.V. Ratnikov, N.N. Ledentsov, Zh.I. Alferov, A. Hoffmann, D. Dimberg

16 Influence of growth temperature on electrical characteristics of Silicon doped GaN grownbyLP-MOVPE 61Z. Bougrioua, I. Moerman, P. Demeester, E.J. Thrush, J.-L. Guyaux, J.C. Garcia

17 On the photo luminescence of InGaN quantum well structures grown by different techniques 655. Figge, T. Bottcher, S. Einfeldt, D. Hommel, H. Selke, P. L. Ryder, S. Keller, S.P. DenBaars

18 MOVPE AlGaN/GaN stuctures for HFETs application 69M. Tlaczala, R. Paszkiewicz, B. Paszkiewicz, J. Kozlowski, R. Korbutowicz, B. Boratynski,M. Leszczynski

19 The field emission properties of a GaN deposited on Si substrate by means of MOVPE method 73W. Czarczynski, St. Lasisz, R. Paszkiewicz, J. Kozlowski, M. Tlaczala, Z. Znamirowski,E. Zolnierz

20 LP-MOC VD growth of GaN MESFETs 77M.A. di Forte-Poisson, F. Huet, A. Romann, M. Tordjman, S. Trassaert, B. Boudart,D. Theron, R. Seitz, E. Pereira, J. di Persio

XI!

Session W2MVCSELs, ll-VIs, and InGaP

I MOVPE for the Production of Short Wavelength VCSELs 83L. Korte, O. Kleinbub, M. Popp, A. Rieger, H.D. Wolf, Z. Spika, T. Wipiejewski

1 Intrinsic C doping: a method for VCSEL production 87R. Hovel, M. Brunner, H.-P. Gauggel, K.H. Gulden, D. Jeggle, M. Moser, HP. Schweizer

2 MO VPE-studies of red VCSELs 91R. Butendeich, D. Graef, J. Schwarz, H. Schweizer, F. Scholz

3 MOCVD growth of Zn-doped strained-QW active-region for 1.55 um double-fused VCSEL 95P. Abraham, S.P. DenBaars, J.E. Bowers

4 Doping of ZnSe with Trisdimethylaminoantimony 99H. Kalisch, H. Hamadeh, R. Riiland, A. L. Gurskii, I. Marko, G. P. Yablonskii, M. Heuken

5 Photoluminescence of ZnSe grown by photo-assisted Metalorganic Vapor Phase Epitaxy 103Hideo Goto, Toshiyuki Ido, Akio Takatsuka

6 Some issues in the photo-assisted MOVPE growth of CdZnSe alloys 107S.J.C. Irvine, M.U. Ahmed, B.R. Harper, I.J. Blackburne and ML Kelly

7 Insights into the MOVPE growth of II:VI semiconductors on Si, as revealed by in-situinterferometry 111A. Stafford, S.J.C. Irvine

8 MOVPE-grown ZnMgCdSe structures on InP 115M. Strafiburg, U. W. Pohl, D. Bimberg

9 Homoepitaxial ZnSe layers and ZnSe/ZnMgSSe structures on ZnSSe substrates 119A.B. Krysa, Yu.V. Korostelin, V.I.Kozlovsky, P.V. Shapkin, P.I. Kuznetsov,G.G. Yakusheva, H. Kalisch, R. Rueland, M. Heuken

10 The dilute magnetic semiconductor mercury mangenese teluride epilayers grown by MOVPE 123S. Oktik, A. W. Brinkman

11 Influence of growth conditions on resistivity of ordered InxGa,.x P grown by LP-MOCVD 127S. Hasenohrl, J. Novak, M. Kudera, R. Kudela

12 Formation of interfaces in MOVPE grown InGaP/GaAs structures 131R. Kudela, M. Kucera, P. Elids, S. Hasenohrl, J. Novak

13 InGaP/ GaAs/InGaP Quantum Well OMVPE Growth on Pre-Patterned GaAs Substrates 1355. Kicin, S. Hasenohrl, J. Novak, I. Vdvra, M. Kudera, P. Hudek

14 High Quality AlGalnP layers on GaAs and Ge grown by MOVPE 139P. Modak, J. Derluyn, M. D'Hondt, P. Mijlemans, I. Moerman, P. Demeester

15 On the nature of the traps related with the In0 5Gao 5P/GaAs interface 143P. Gladkov, D. Nohavica, E. Paloura

XIII

16 4" multiwafer MOVPE for HBT application 147T. Bergunde, F. Brunner, P. Kurpas, E. Richter, M. Achouche, S. Kraus, M. Weyers

17 Wafer-Bonded InGaAlP/AuBe/Si Light-Emitting Diodes 149D.S. Wuu, R.H. Horng, S.C. Wei, C. Y. Tseng, M.F. Huang, K.H. Chang, P.H. Liu,K.C. Lin

XIV

Session W1ALow-dimensional, Theory, and Precursors

I Some novel prospects for self-assembled InAs/GaAs quantum boxes 153J.M. Gerard

1 Self-assembled InP quantum islands buried in (AlxGa1.x)0.5iIn0.49P:Improved optical properties at room-temperature 155J. Porsche, M. Ost, F. Scholz

2 Growth of InAs quantum dots and GaAs cap-layers by MOVPE 159V. I. Shashkin, V.M. Danil'tsev, Yu.N. Drozdov, O.I. Khrykin, A.V. Murel, N.V. Vostokov

3 Formation of self-limiting vertical quantum barriers grown on nonplanar substrates 163G. Biasiol, K. Leifer, E. Kapon

4 In-situ growth of InAs quantum dots on patterned GalnAs/InP nanostructures 167M. Borgstrom, W. Seifert, I. Maximov, J. Johansson, L. Samuelson

5 Direct evidence of In-enrichment in MOCVD-grown (In, Ga)As/GaAs quantum dots 171A. Krost, J. Biasing, F. Heinrichsdorff, D. Bimberg

6 Growth and Characterization of GalnP/GaP Self-assembled Quantum Dots 175J. Johansson, V. Zwiller, C. Thelander, Ch. Svensson, J.-O. Malm, L. Falk,A. Gustafsson, W. Seifert, L Samuelson

7 Study of MOVPE InAs/GaAs quantum dots for light emission at 1.3 um :luminescence efficiency and structural properties 179/. Sagnes, A. Lemaitre, G. Patriarche, O. Toson, B. Gayral, I. Prevot, G. Le Roux, J.M. Gerard

8 Macrokinetics of MOCVD process with homogeneous chemical reactions 183V.G. Minkina

9 Doping and complex formation mechanism in epitaxial grown GaAs. 187LA. Bobrovnikova, L.G. Lavrentieva, M.D. Vilisova

10 Surface reconstruction processes in MO VPE grown GaAs layers 191D. Nohavica

11 Modeling of heat transfer and mass transport during AlGaAs growth in N2 and H2 ambient 195H. Hardtdegen, M. Dauelsberg, P. Kaufmann, L. Kadinski

12 Modeling analysis of competitive arsenic and phosphorus incorporation duringMOVPE of GaAsP and related ternary compounds 199S.Yu. Karpov, V.G. Prokofiev, Yu.N. Makarov, A. Krishnan

13 1,1-Dimethylhydrazine as a high purity nitrogen source for MOVPE - Water reductionand quantification using NMR, GC-AED and Cryogenic-MS analytical techniques 203R. Odedra, L.M. Smith, S.A. Rushworth, M.S. Ravetz, J. Clegg, R. Kanjolia, S.J.C. Irvine,M. Ahmed, ED. Bourret-Courchesne, N.Y. Li, J. Cheng

XV

14 The influence of alternative group-V sources on the incorporation behaviour andheterointerface quality in the system (GaIn)(AsP) on InP 207M. Gerhardt, G. Kirpal, I. Pietzonka, J. Kovac, R. Schwabe, G. Benndorf V. Gottschalch

15 Alternative Dopant Sources for GaN:Mg 211W.S. Rees, Jr.

XVI

Session W2ADoping, Production of HEMTs and Various Devices / GaAsBi

1 MOVPE production technology applied to pseudomorphic HEMTs 215P.M. Frijlink

0 All liquid source growth of carbon doped Ino.53Gao.47As/InP HBT by means of LP-MOVPE 217P. Veiling, M. Agethen, E. Herenda, W. Prost, W. Stolz, F.-J. Tegude

1 Elemental magnesium as p-type dopant in InP grown by chemical beam epitaxy 221M.R. Leys, R.T.H. Rongen, F.C.deNooij, C.A. Verschuren, H. Vonk, J.H. Wolter,J. G.M. van Berkum "

2 LP-MOVPE based Zn Diffusion into InGaAs/InP using H2 and N2 Carrier Gas 225H. Schroeter-Janssen, D. Franke, H. Roehle, P. Harde, R. Bochnia, N. Grote

3 8-doped InGaAs/InP Multiple Quantum Wells Grown by Metalorganic Vapour Phase Epitaxy 229P. Bonsch, D. Wullner, H.-H. Wehmann, A. Schlachetzki, F. Hitzel, D. Schneider

4 Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors ina production scale MOVPE reactor 233F. Brunner, T. Bergunde, E. Richter, P. Kurpas, S. Gramlich, I. Rechenberg,S. Kraus, M. Achouche, J. Wiirfl, M. Weyers

5 980nm GalnAs / AlGaAs Lasers With High Output Power 237N. Carr, F. Wilson, J. Lewandowski, J. Thompson, F. Robson, D. Robbins, A. Wood

6 Properties of GaN-InGaN-multi quantum well structures grown in production typeMOVPE systems 241H. Protzmann, M. Liinenburger, J. Biasing, A. Krost, M. Heuken

7 AlGalnP MOVPE on 35 two inch wafers/run 245M. Deufel, T. Schmitt, G. Strauch, D. Schmitz, M. Heuken, H. Juergensen

8 Characterization of GaAsi_xBix epilayers by Raman scattering and X-ray diffraction 249M. Herms, V.G. Melov, P. Verma, G. Irmer, H. Okamoto, M. Fukuzawa, K. Oe, M. Yamada

9 DBMQW laser diode with low vertical beam divergence 253A. Malag, W. Strupinski, E. Jezierska

10 Development of GalnP/GaAs tandem solar cells on GaAs and Germanium substrates 255F. Dimroth, P. Lanyi, U. Schubert, A. W. Belt

11 MOVPE growth for InP based Micro-Opto-Electro-Mechanical Systems (MOEMS) 259D. Keiper; N. Chitica, M. Strassner; B. Stalnacke; J. Daleiden; G. Landgren

12 Investigation of X- and y-ray detectors based on GaAs and InP with electrodes grownby MOCVD 263F. Dubecky, J. Darmo, B. Zat'ko, M. Krempasky, S. Hasenohrl, O. Prochdzkovd, I. Besse,M. Sekdcovd, P. Bohdcek, P. G. Pelfer, V. Necas

XVII

Session T1MLong-Wavelength Optoelectronics and Microelectronics on InP and Growth

on Patterned Surfaces / Selective Epitaxy and InGaAsP

I Waveguiding Structures for Large Scale Integration with InP 267C.H. Joyner, L.J.P. Ketelsen, J. E. Johnson, R. People, M.A. Alam

1 In-situ etching (ISE) and selective regrowth of InP-based optoelectronic device structures 271D. Bertone, R. Campi, R. Y. Fang, G. Magnetti, M. Meliga, G. Morello, R. Paoletti.

2 MOVPE SAG for Vertical Mode Optical Adapter 275D. Leclerc, D. Ottenwdlder, N. Tscherptner, L. Legouezigou

3 Preparation and Properties of InAs/GaAs Lasers 277J. Oswald, E. Hulicius, J. Pangrdc, K. Melichar, T. Simecek, O. Petficek, F. Karel

4 Strain-compensated InGaAsP common active layer by MOVPE for tunable DBR laser andelectroabsorption modulator monolithic integration 281H. Sik, A. Ougazzaden, E. Vergnol, D. Meichenin, A. Ramdane

5 Area-Selective Growth of In(GaAs)P on Silicon 285D. Fehly, H.-H. Wehmann, A. Schlachetzki

6 Single mode gain-coupled InGaAs/GaAs/AlGaAs buried heterostructure lasers obtainedby selective MOVPE 289V.P. Iakovlev, A. V. Syrbu, A. Rudra, E. Kapon

7 Influence of mask design on the optical transition energy of InGaAs/InAlAs quantum wells 293grown by selective area epitaxyB. Yavich, F. Racedo N, M. P. Pires, L. C. D. Goncalves, P. L. Souza

8 Patterned growth of (AlGa)As using metalorganic vapor phase epitaxy 297L. Hofmann, A. Knauer, I. Rechenber, M. Weyers, W. Stolz

9 Selective and conformal MOVPE growth of (Al)GaAs using alternative chloride precursors 301M. Philippens, Ch. Giesen, B. Gerard, S. Rushworth, K. Heime

10 Uniformity of Q(1.3)/InP grown by MOVPE - dependence on the carrier gas andgroup-V precursor • 305D. Keiper, R. Westphalen, G. Landgren

11 Growth of high-quality InP-recess-etch stopper layer and its application toInAlAs/InGaAs HEMTs 309Haruki Yokoyama, Takatomo Enoki, Yohtaro Umeda, Takashi Kobayashi, Yasunobu Ishii

12 Improved uniformity of InGaAsP for OEIC applications grown by LP-MOVPE usingan optimized liner and susceptor arrangement 313R. Westphalen, B. Stdlnacke, R. Beccard, G. Landgren

13 Epitaxial structure for Composite Channel InP HEMT by MOVPE 317J. Decobert, H. Maher, G. Rondeau, S. Sainson, S. Biblemont, G. Post

XVIII

14 Annealing effect on HEMT layers during photodiode growth for PIN-HEMT integration 321G. Rondeau, J. Decobert, S. Biblemont, G. Post

15 Influence of Barrier Composition on Laser Characteristics in Strained MQW InGaAsPStructures at 1.55mm Grown by MOVPE 325S. Bouchoule, A. Ougazzaden, A. Mereuta, L. Leprince, J.-G. Provost

16 Gain Enhancement in YAS-Constant Strained Compensated 1.55um InGaAsP Laser Structureswith 10, 15 and 20 QWs Grown by MOVPE 329A. Ougazzaden, A. Mereuta, S. Bouchoule, G. Patriarche, L. Leprince, J.-G. Provost

XIX

Session T2MIn Situ Monitoring, Sb-based Materials, and Material Characterisation

I Reflectance based optical sensors for real-time monitoring of MOVPE device growth 335J.-T. Zettler

1 Characterization of clean P-rich MOC VD-grown InP( 100)-films 337Th. Hannappel, S. Visbeck, J. Mahrt, K. Knorr, P. Vogt, N. Esser, A. M. Frisch, M. Zorn,W. Richter, F. Willig

«2 In Situ Monitoring of GaN Growth in Multiwafer MOVPE Reactors 341

M. Luenenbuerger, H. Protzmann, M. Heuken, H. Juergensen

3 Optical in-situ monitoring of the formation of ZnS/GaP and ZnSe/GaAs MOVPE-growninterfaces 345C. Meyne, M. Gensch, S. Peters, U.W. Pohl, J.-T. Zettler, W. Richter

4 Surface photoabsorption monitoring of the strain induced 2D-3D growth mode transitionin MOVPE of InGaAs on GaAs (001) 349N. V. Vostokov, V.M. Danil'tsev, M.N. Drozdov, Yu.N. Drozdov, A.Yu. Lukyanov, D.G. Revin,O.I. Khrykin, V.I. Shashkin

5 Reconstruction and Step-Bunching on (001) GaAs 353M. Pristovsek, J.-T. Zettler, W. Richter

6 Correlation of InGaP(OOl) surface structure and bulk ordering during MOVPE growth 357M. Zorn, P. Kurpas, A. Bhattacharya, M. Weyers, J.-T. Zettler, W. Richter

7 MOVPE growth and characterization of InSbBi mixed crystals 361M.C. Wagener, JR. Botha, A.W.R. Leitch

8 Residual strain effects on the properties of InSb layers grown on GaAs substrates byatmospheric pressure MOVPE 365R. Bozek, J. Jasinski, E. Zielinska-Rohozinska, R. Stepniewki

9 Optical characterisation of a thick MOVPE InSb film on GaAs 369M. Lorenc, J. Sik, A. Nebojsa, K. Navrdtil, J. Humlicek, V. Vorlicek, E. Hulicius

10 Thermodynamic analysis of the GalnAsSb epitaxial layers growth by MOVPE 373J. Stejskal, J. Leitner, P. Vohka

11 MOVPE of Sb-based multi-quantum wells for mid-infrared optoelectronic devices 377A. Behres, J. Kluth, A. Stein, D. Puttjer, Ch. Giesen, P. Christol, A. Wilk, A. Joullie, K. Heime

12 InAs/GaSb structures on GaSb: A Raman scattering study 381V. Vorlicek, E. Hulicius, J. Pangrdc, K. Melichar, T. Simecek

13 Photoluminescence from the MOVPE grown GaAs/GaAlAs Superlattices 385J. Voves, P. Hazdra

14 Optical properties of GaAs/AlAs monolayermultiquantum well structures 389D. Pudis, J. Kovdc, V. Gottschalch, G. Benndorf R. Schwabe, B. Rheinldnder, A. Satka,L. Jdnos, J. Skriniarovd

XX

Session F1MHighly Strained Structures, InGaAs/GaAs, Long-wavelength InGaAsN/GaAs,

Il-Vs, and BaO Based Materials

I Transmission Electron Microscopy Studies of Lattice-Mismatched SemiconductorHeterostructures 395G. Patriarche

1 MOVPE of Strain-Compensated 1.55 urn DFB Laser Structures with a High Number ofQuantum Wells Grown under Nitrogen Atmosphere 399S. Jochum, E. Kuphal, W. Gortz, S. Hansmann

2 MOVPE growth on compliant substrate : AFM characterization 403C. Figuet, V. Souliere.Y. Monteil, C. Pautet, X. Hugon, O. Marty

3 Growth and physical properties of InGaAs epitaxial films on compliant substrate ofporous GaAs 407Yu. Buzynin, N. Vostokov, S. Gusev, V. Daniltsev, D. Gaponova, Yu. Drozdov, B. Zvonkov,O. Khrykin, A. Murel, D. Revin, V. Shashkin

4 MOVPE growth and characterization of InAs/GaAs monolayer active region forlaser structures 409J. Kovdc, L. Kuna, V. Gottschalch, G. Benndorf M. Gerhardt, D. Pudis, J. Jakabovic,J. Skriniarovd

5 MOVPE Growth of Piezoelectric InGaAs/GaAs Quantum Well Structures on<111> Oriented GaAs Substrates with High Interfacial Quality 413Jongseok Kim, A. Sanz-Hervds, Soohaeng Cho, A. Mqjerfeld, C. Villar, B. W. Kim

6 Influence of In Content Inhomogeneities on the Generation of <010> Misfit Dislocations inMOVPE InGaAs SQWs 417C. Frigeri, A. Brinciotti, D. M. Ritchie, G. P. Donzelli

7 Growth behaviour of InGaAs/GaAs strained quantum wires obtained by OMCVD onV-grooved substrates 421A. Rudra, K. Leifer, F. Lelarge, C. Constantin, V. Iakovlev, E. Martinet, E. Kapon

8 Strained InxGa,.xAs/GaAs Multiple Quantum Wells Grown by MOVPE 425A. Hospodkovd, E. Hulicius, J. Oswald, J. Pangrdc, K. Melichar, T. Simecek

9 MOVPE growth of GaAsN alloys on vicinal GaAs (100) 429L. Auvray, H. Dumont, J. Dazord, Y. Monteil, J. Bouix, C. Bru-Chevallier, L Grenouillet,G. Guillot

10 MOVPE of GaAsN ON GaAs(001) using Tertiarybutylhydrazine 433T. Schmidtling, M. Klein, M. Pristovsek, K. Knorr, U. W. Pohl, W. Richter

11 Annealing studies of metal-organic vapor phase epitaxy grown GalnNAs bulk andmultiple quantum well structures 437C. Asplund, A. Fujioka, M. Hammar, G. Landgren

XXI

12 InGaAsN/GaAs Quantum Well Structures in the Range of 1.2-1.59 urn Grownby Atmospheric Pressure MOVPE 441A. Mereuta, A. Ougazzaden, S. Bouchoule, F. Alexandre, G. Le Roux, I. Sagnes

13 Photoluminescence properties of Zn3As2 grown by MOVPE 445JR. Botha, G.J. Scriven, J.A.A. Engelbrecht, A.W.R. Leitch

14 Homoepitaxial NdBa2Cu307.y Films Grown by MOCVD 449M. Komatsu, F. Wang, N. Tanaka, H. Zama, K. Tanabe, T. Morishita

Session F2M

I MOVPE for Production of Opto-electronic Devices 445R.H. Moss, N. Tothill, A. Taylor

0 1 Lattice-mismatched InGaAs layers grown by MOVPE on GaAs and InP compliant substrates 457K. Vanhollebeke, I. Moerman, P. Van Daele, P. Demeester

0 2 Optical characterization of (GaIn)(NAs)/GaAs MQW structures 461J. Koch, F. Hohnsdorf, W. Stolz

0 3 Homoepitaxial growth of high quality GaN by MOVPE 465C. Kirchner, F. Eberhard, V. Schwegler, M. Kamp, K.J. Ebeling, K. Kornitzer,K. Thonke, R. Sauer, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski

XXII