Supporting Information for

Resonant level induced high thermoelectric response in indium-doped GeTe

Lihua Wu,1 Xin Li,1, 2 Shanyu Wang,3 Tiansong Zhang,4 Jiong Yang,1, * Wenqing Zhang,1, * Lidong Chen,4 and Jihui Yang 3, *

1. Materials Genome Institute, Shanghai University, Shanghai 200444, China.2. Department of Physics, College of Sciences, Shanghai University, Shanghai 200444, China3. Materials Science and Engineering Department, University of Washington, Seattle 98195, Washington, USA.4. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.* Corresponding authors. Emails: jiongy@t.shu.edu.cn (Jiong Yang); wqzhang@t.shu.edu.cn (Wenqing Zhang); jihuiy@uw.edu (Jihui Yang).

Fig. S1. Powder XRD patterns for InxGe1-xTe (x=0, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06) compounds.

PDF card #47-1079 reference of GeTe R3m phase is given.

Fig. S2. SEM and EDS elemental mappings of the undoped sample of GeTe.

Fig. S3. SEM and EDS elemental mappings of In0.02Ge0.98Te.

Fig. S4. SEM and EDS elemental mappings of In0.06Ge0.94Te.

Fig. S5. The calculated Lorenz numbers L for InxGe1-xTe (x=0, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06)

compounds.