WAFER ANALYSIS BY BSE ICP-MSBULK SILICON ETCHINDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY

What is BSE ICP-MS?

Application1. Implant 4. CVD: PECVD, LPCVD2. Silicon Epitaxial 5. Sawing3. CMP

Advanced wet-chemistries etching of Si-based film or substrate allowing trace metals characterization across a large surface area within certain depth. This versatile technique allows single or multi step etching of film or substrate varying from 50Å to 100µm.

Si or Poly

Sub-surface trace metals by Multi Step BSE ICP-MS

Bulk trace metals by Bulk Digestion Polysilicon or Silicon Substrate

Method Detection Limits (E10 atoms/cm2)

Aluminum (Al)Antimony (Sb)

Arsenic (As)Barium (Ba)

Beryllium (Be)Bismuth (Bi)

Boron (B)

Cadmium (Cd)Calcium (Ca)

Chromium (Cr)

5

0.05

0.5

0.05

5

0.02

10

0.1

5

1

MDLELEMENTS

Cobalt (Co)Copper (Cu)

Gallium (Ga)Germanium (Ge)

Iron (Fe)Lead (Pb)

Lithium (Li)

Magnesium (Mg)Manganese (Mn)

Molybdenum (Mg)

0.2

1

0.2

0.2

3

0.05

1

5

0.05

0.5

MDLELEMENTS

Nickel (Ni)Potassium (K)

Sodium (Na)Strontium (Sr)

Tin (Sn)Titanium (Ti)Tungsten (W)

Vanadium (V)Zinc (Zn)

Zirconium (Zr)

0.5

5

5

0.05

0.1

2

0.5

0.5

1

0.05

MDLELEMENTS

Method detection limits (MDL) are based on 500Å etch depth

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CROSS SECTION VIEW OF POLYSIL ICON OR SIL ICON SUBSTRATE

-- In-film by BSE ICP-MS