Volume 4343 Emerging Lithographic Technologies VNEXT-GENERATION LITHOGRAPHY AND MANUFACTURINGEUV LITHOGRAPHYPROJECTION ELECTRON LITHOGRAPHYSCALPELX-RAY LITHOGRAPHYEUV SOURCES INEXT-GENERATION RESISTSE-BEAM LITHOGRAPHYEUV SOURCES II/EUV DEFECT CONTROLMASKSNANOFABRICATIONLITHOGRAPHY WITH IONSPOSTER SESSION

Volume 4344 Metrology, Inspection, and Process Control for Microlithography XV

INVITED SESSIONDEFECTS IDEFECTS IIAFM METROLOGYOVERLAY ISTANDARDSCD CONTROL: MASKOVERLAY IIMODELINGCD CONTROL ICD CONTROL IIBEYOND CD: FEATURE SHAPE AND METROLOGY FOR PROCESS CONTROL

NEW TECHNOLOGIESSCATTEROMETRYLATE BREAKING NEWS300-MM PRODUCTIONPOSTER SESSION

Volume 4345 Advances in Resist Technology and Processing XVIII

FUNDAMENTAL STUDIES IFUNDAMENTAL STUDIES IIARF MATERIALS IARF MATERIALS IIPROCESSING AND EXAMINATION IPROCESSING AND EXAMINATION IIKRF PROCESSING AND MATERIALSVUV SECTION IVUV SECTION IIVUV SECTION IIIUNDERSTANDING MOLECULAR CONTAMINATION IN LITHOGRAPHY: JOINT SESSIONPOSTER SESSION

Volume 4346 Optical Microlithography XIVLENS ABERRATIONS157-NM LITHOGRAPHYADVANCES IN OPCOPTIONS FOR THE 100-NM NODELITHOGRAPHY FOR DRAMPROCESS OPTIMIZATION AND CONTROLSIMULATIONSYSTEM CHARACTERIZATIONALTERNATING PSM IMPLEMENTATIONNOVEL RET APPROACHES AND ISSUES

EXPOSURE TOOL SUBSYSTEMSARF PRODUCTION EQUIPMENTUNDERSTANDING MOLECULAR CONTAMINATION IN LITHOGRAPHY: JOINT SESSIONPOSTER SESSION

Volume 4343 Emerging Lithographic Technologies V

SESSION 1 NEXT-GENERATION LITHOGRAPHY AND MANUFACTURING

Technology in the Internet era [4343-201] D. Buss

Insertion of EUVL into high-volume manufacturing [4343-1] P. Silverman

SESSION 2 EUV LITHOGRAPHY

System integration and performance of the EUV engineering test stand [4343-4] D. Tichenor, A. Ray-Chaudhuri, W. Replogle, R. Stulen, G. Kubiak, P. Rockett, L. Klebanoff, K. Jefferson, A. Leung, J. Wronosky, L. Hale, H. Chapman, J. Taylor, J. Folta, C. Montcalm, R. Soufli, E. Spiller, K. Blaedel, G. Sommargren, D. Sweeney, P. Naulleau, K. Goldberg, E. Gullikson, J. Bokor, P. Batson, D. Attwood, K. Jackson, S. Hector, C. Gwyn, P. Yan

Progress of the EUVL alpha tool [4343-5] H. Meiling, J. Benschop, U. Dinger, P. Kuerz

Multilayer optics for an extreme-ultraviolet lithography tool with 70-nm resolution [4343-7] R. Soufli, E. Spiller, M. Schmidt, C. Davidson, R. Grabner, E. Gullikson, B. Kaufmann, S. Mrowka, S. Baker, H. Chapman, R. Hudyma, J. Taylor, C. Walton, C. Montcalm, J. Folta

Feasibility study of EUV scanners [4343-8] K. Ota, K. Murakami, H. Kondo, T. Oshino, K. Sugisaki, H. Komatsuda

SESSION 3 PROJECTION ELECTRON LITHOGRAPHY

PREVAIL-EPL alpha tool electron optics subsystem [4343-9] H. Pfeiffer, R. Dhaliwal, S. Golladay, S. Doran, M. Gordon, R. Kendall, J. Lieberman, D. Pinckney, R. Quickle, C. Robinson, J. Rockrohr, W. Stickel, E. Tressler

Nikon EB Stepper: the latest development status [4343-10] K. Suzuki, T. Fujiwara, K. Hada, N. Hirayanagi, S. Kawata, K. Morita, K. Okamoto, T. Okino, S. Shimizu, T. Yahiro,

H. Yamamoto

New data postprocessing for e-beam projection lithography [4343-11] K. Okamoto, K. Kamijo, S. Kojima, H. Minami, T. Okino

Bremsstrahlung emission and absorption in electron projection lithography [4343-12] S. Hector, J. Cobb, V. Ivin, M. Silakov, G. Babushkin

Impact of positive ions and effect of lens aberrations in projection electron-beam systems [4343-13] B. Wu, A. Neureuther

SESSION 4 SCALPEL

Progress on the realization of the electron column modules for SCALPEL high-throughput/alpha electron projection lithography tools [4343-14]

D. Stenkamp, O. Kienzle, A. Orchowski, W. Rau, A. Weickenmeier, G. Benner, M. Wetzke, W. Waskiewicz, V. Katsap, X. Zhu, H. Liu, E. Munro, J. Rouse

CD control analysis of the SCALPEL-HT/alpha optics [4343-15] S. Stanton, W. Waskiewicz, E. Munro, J. Rouse, X. Zhu

Simulations of a SCALPEL wafer-heating correction using an adaptive Kalman filter [4343-16] S. Stanton

SESSION 5 X-RAY LITHOGRAPHY

Overlay and critical dimension control in 100-nm ULSI processes using TaBN x-ray masks and the XRA x-ray stepper [4343-17]

K. Fujii, Y. Tanaka, T. Iwamoto, S. Tsuboi, H. Sumitani, T. Taguchi, K. Suzuki, Y. Matsui

Production x-ray lithography stepper for 100-nm device fabrication [4343-18] X. Li, T. Miyatake, S. Hirose, M. Hirose, K. Fujii, K. Suzuki

New results in high-energy proximity x-ray lithography [4343-110] M. Khan, G. Han, J. Maldonado, F. Cerrina

Deep x-ray lithography with the SU-8 resist [4343-20] L. Singleton, A. Bogdanov, S. Peredkov, O. Wilhelmi, A. Schneider, C. Cremers, S. Megtert, A. Schmidt

Characterization of a laser-produced x-ray source with a double-stream gas puff target for x-ray and EUV lithography [4343-54]

H. Fiedorowicz, A. Bartnik, H. Daido, R. Jarocki, R. Rakowski, M. Suzuki, M. Szczurek, S. Yamagami

SESSION 6 EUV SOURCES I

Extreme-ultraviolet sources for lithography applications [4343-23] V. Banine, J. Moors

Comparison of different source concepts for EUVL [4343-22] R. Lebert, K. Bergmann, L. Juschkin, O. Rosier, W. Neff

Development of a high-average-power extreme-ultraviolet electric capillary discharge source [4343-24] N. Fornaciari, H. Bender, D. Buchenauer, M. Kanouff, S. Karim, G. Kubiak, C. Moen, G. Shimkaveg, W. Silfvast, K. Stewart

Progress toward use of a dense plamsa focus as a light source for production EUV lithography [4343-25] W. Partlo, I. Fomenkov, R. Ness, R. Oliver, S. Melnychuk, J. Rauch

Laser-produced plasma (LPP) scale-up and commercialization [4343-26] R. Moyer, H. Shields, A. Martos, S. Fornaca, R. St. Pierre, M. Petach

SESSION 7 NEXT-GENERATION RESISTS

Multiple-anion nonvolatile acetal (MANA) resists [4343-27] J. Guevremont, R. Brainard, S. Reeves, X. Zhou, T. Nguyen, J. Mackevich, E. Anderson, G. Taylor

High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask and device making [4343-28]

W. Huang, R. Kwong, W. Moreau, R. Lang, C. Robinson, D. Medeiros, K. Petrillo, A. Aviram, A. Mahorowala, M. Angelopoulos, C. Magg, M. Lawliss, T. Faure

Theoretical calculations of photoabsorption of polymers in the EUV (extreme ultraviolet) region N. Matsuzawa, S. Irie, E. Yano, S. Okazaki, A. Ishitani

Vacuum delay effect of CAR in mask fabrication [4343-30] C. Kim, C. Jeon, S. Han, W. Cho, S. Choi, W. Han, J. Sohn

Fabrication of patterned-surface reactivity templates using physisorption of reactive species in solvent-imprinted nanocavities [4343-31]

W. Dressick, P. Nealey, S. Brandow

Tunable antireflective coatings with built-in hard mask properties facilitating thin-resist processing [4343-88]

A. Mahorowala, K. Babich, K. Petrillo, J. Simons, M. Angelopoulos, V. Patel, A. Grill, S. Halle, R. Conti, C. Wu, R. Wise, L. Chen, A. Thomas, B. Lee, O. Genz

SESSION 8 E-BEAM LITHOGRAPHY

Essential reduction of stitching errors in electron-beam lithography using a multiple-exposure technique [4343-43]

R. Steingrueber, H. Engel, W. Lessle

Application of advanced 100-kV EB writer EB-X3 for 100-nm node x-ray mask fabrication [4343-44] H. Watanabe, Y. Nakayama, S. Tsuboi, M. Ezaki, H. Aoyama, Y. Matsui, T. Morosawa, M. Oda

New registration technique using voltage-contrast images for low-energy electron-beam lithography [4343-45]

T. Nakasugi, A. Ando, K. Sugihara, M. Miyoshi, K. Okumura

First environmental data from the EUV engineering test stand [4343-50] L. Klebanoff, M. Malinowski, P. Grunow, M. Clift, C. Steinhaus, A. Leung, S. Haney

Use of molecular oxygen to reduce EUV-induced carbon contamination of optics [4343-51] M. Malinowski, P. Grunow, C. Steinhaus, M. Clift, L. Klebanoff

SESSION 9 EUV SOURCES II/EUV DEFECT CONTROL

Extremely fine-pitch printing with a 10X Schwarzschild optic at extreme-ultraviolet wavelengths M. Shumway, S. Lee, C. Cho, P. Naulleau, K. Goldberg, J. Bokor

Recent developments in EUV reflectometry at the Advanced Light Source [4343-91] E. Gullikson, S. Mrowka, B. Kaufmann

SESSION 10 MASKS

Evaluation and comparison of the pattern-transfer-induced image placement distortions on e-beam projection lithography masks [4343-38]

C. Magg, M. Lercel, M. Lawliss, R. Ackel, N. Caldwell, L. Kindt, K. Racette, C. Williams, P. Reu

Vibrational analysis of 200-mm EPL masks [4343-74] A. Mikkelson, C. Chen, R. Engelstad, E. Lovell

Impact of the EUV mask phase response on the asymmetry of Bossung curves as predicted by rigorous EUV mask simulations [4343-40]

C. Krautschik, M. Ito, I. Nishiyama, K. Otaki

Infinitely selective repair buffer for EUVL reticles [4343-41] J. Wasson, K. Smith, P. Mangat, S. Hector

TaN EUVL mask fabrication and characterization [4343-42] P. Yan, G. Zhang, A. Ma, T. Liang

SESSION 11 NANOFABRICATION

Advances in graft polymerization lithography [4343-32] C. Brodsky, B. Trinque, H. Johnson, C. Willson

Nanoimprint lithography with a commercial 4-in. bond system for hot embossing [4343-33] N. Roos, T. Luxbacher, T. Glinsner, K. Pfeiffer, H. Schulz, H. Scheer

Layer-to-layer alignment for step and flash imprint lithography [4343-34] B. Choi, M. Meissl, M. Colburn, T. Bailey, P. Ruchhoeft, S. Sreenivasan, F. Prins, S. Banerjee, J. Ekerdt, C. Willson

High-resolution proximity printing by wave-optically designed masks [4343-37] T. Nellissen, L. Wang, M. Dirkzwager, F. Wyrowski, E. Kley, H. Aagendahl, S. Buehling

SESSION 12 LITHOGRAPHY WITH IONS

Ion projection lithography: advances with integrated tool and resist processes [4343-47] A. Wolter, R. Kaesmaier, H. Loeschner

Progress in placement control for ion beam stencil mask technology [4343-48] F. Kamm, A. Ehrmann, T. Struck, K. Kragler, J. Butschke, F. Letzkus, R. Springer, E. Haugeneder

Micromachining using a focused MeV proton beam for the production of high-precision 3D microstructures with vertical sidewalls of high orthogonality [4343-49]

J. van Kan, A. Bettiol, K. Ansari, F. Watt

SESSION 14 POSTER SESSION

Development of data conversion system for electron-beam projection lithography (EPL) mask [4343-52] Y. Yamada, H. Kobinata, T. Tamura, M. Miyasaka, T. Sakamoto, Y. Ogawa, K. Takada, H. Yamashita, H. Nozue

High-accuracy aerial image measurement for electron-beam projection lithography [4343-53] T. Yahiro, N. Hirayanagi, K. Morita, T. Irita, H. Yamamoto, S. Suzuki, H. Shimizu, S. Kawata, T. Okino, K. Suzuki

Vacuum spark point source for x-ray/EUV lithography [4343-21] X. Guo, M. Xu, R. Ye, C. Huang, K. Wirpszo, E. Panarella

Thick silicon membranes as mask blank for SU-8 x-ray deep lithography [4343-55] I. Maia, L. Ferreira, M. Piazzetta, G. Natal

EUV absorption in a laser-produced plasma source [4343-56] M. Kanouff, H. Shields, L. Bernardez, G. Kubiak

Thermomechanical modeling of the EUV reticle during exposure [4343-57] C. Martin, R. Engelstad, E. Lovell

Quantifying EUV imaging tolerances for the 70-, 50-, 35-nm modes through rigorous aerial image simulations [4343-59]

C. Krautschik, M. Ito, I. Nishiyama, T. Mori

Scaling-up a liquid water jet laser plasma source to high average power for extreme-ultraviolet lithography [4343-60]

U. Vogt, H. Stiel, I. Will, M. Wieland, T. Wilhein, P. Nickles, W. Sandner

Advanced point diffraction interferometer for EUV aspherical mirrors [4343-61] K. Ota, T. Yamamoto, Y. Fukuda, K. Otaki, I. Nishiyama, S. Okazaki

Models for characterizing the printability of buried EUV defects [4343-62] Y. Deng, T. Pistor, A. Neureuther

Laser-induced EUV source for optics characterization [4343-63] S. Kranzusch, K. Mann

Spectroscopic and energetic investigation of capillary discharges devoted to EUV production for new lithography generation [4343-64]

E. Robert, B. Blagojevic, R. Dussart, S. Mohanty, M. Idrissi, D. Hong, R. Viladrosa, J. Pouvesle, C. Fleurier, C. Cachoncinlle

Fabrication of a fly-eye mirror for an extreme-ultraviolet lithography illumination system [4343-76] H. Takino, T. Kobayashi, N. Shibata, M. Kuki, A. Itoh, H. Komatsuda

Filter windows for EUV lithography [4343-87] F. Powell, T. Johnson

In-situ stress measurement of molybdenum/silicon multilayers and low-stress multilayers for extreme-ultraviolet lithography [4343-93]

M. Shiraishi, W. Ishiyama, N. Kandaka, T. Oshino, K. Murakami

Development of an EUV reflectometer using a single line emission from a laser-plasma x-ray source [4343-94]

N. Kandaka, H. Kondo, K. Sugisaki, T. Oshino, M. Shiraishi, W. Ishiyama, K. Murakami

Damage-resistant and low stress EUV multilayer mirrors [4343-95] S. Yulin, T. Kuhlmann, T. Feigl, N. Kaiser

Compact Z-pinch EUV source for photolithography [4343-96] G. Schriever, M. Rahe, U. Stamm, D. Basting, O. Khristoforov, A. Vinokhodov, V. Borisov

Reflecting-surface distortion when mirrors are cut to shape [4343-97] G. Meda

Automated set-up for extreme-ultraviolet mask lithography: the first step to count and clean in one [4343-98]

J. Hue, V. Muffato, C. Pelle, E. Quesnel, P. Garrec, F. Baume

Adding static printing capabilities to the EUV phase-shifting point diffraction interferometer [4343-100] P. Naulleau, K. Goldberg, E. Anderson, P. Batson, P. Denham, K. Jackson, S. Rekawa, J. Bokor

Flatness correction of NZTE mask blank substrates [4343-102] L. Aschke, F. Schubert, J. Kegeler, A. Schindler, T. Haensel, K. Knapp

Combined metrology including VUV spectroscopic ellipsometry and grazing x-ray reflectance for precise characterization of thin films and multilayers at 157 nm [4343-106]

P. Boher, P. Evrard, J. Piel, S. Janicot, J. Stehle

Luminescent materials for EUV detection purposes [4343-108] M. Kroon, R. Stuik

Equivalent multilayer bandwidth and comparison between 13.4 nm and 14.4 nm for EUV throughput calculation [4343-109]

W. Chao, E. Gullikson, D. Attwood

Improvement of beam-adjustment accuracy by beam-intensity distribution measurement on a second shaping aperture in electron-beam writing systems [4343-66]

S. Nishimura, M. Ogasawara, T. Tojo

High-resolution and high-stability electromagnetic-deflection control system for EB lithography system [4343-67]

K. Nagata, M. Okumura, K. Maio, A. Fujii, H. Andoh, T. Morimura, H. Hayakawa

Stitching accuracy measurement system for EB direct writing and electron-beam projection lithography (EPL) [4343-68]

T. Tamura, T. Ema, H. Nozue, T. Sugahara, A. Sugano, J. Nitta

Shot number analysis on character projection e-beam lithography for random logic device fabrication at 70-nm node [4343-69]

Y. Tomo, I. Shimizu, Y. Kojima, A. Yoshida, H. Takenaka, M. Yamabe

Highly accurate CD control at stitching region for electron-beam projection lithography [4343-71] T. Fujiwara, T. Irita, S. Shimizu, H. Yamamoto, K. Suzuki

Performance of the improved JBX-9000MV e-beam lithography system [4343-72] T. Komagata, Y. Nakagawa, N. Gotoh, K. Tanaka

Characteristics of the Ru buffer layer for EUVL mask patterning [4343-75] B. Lee, E. Hoshino, M. Takahashi, T. Yoneda, H. Yamanashi, H. Hoko, A. Chiba, M. Ito, M. Ryoo, T. Ogawa, S. Okazaki

Substrate defect smoothing of EUVL mask blanks using TaSiN films [4343-77] J. Wasson, T. Hopson, P. Mangat, S. Hector

Tantalum nitride films for the absorber material of refractive-type EUVL mask [4343-78] M. Takahashi, T. Ogawa, E. Hoshino, H. Hoko, B. Lee, A. Chiba, H. Yamanashi, S. Okazaki

Evaluation of Shipley XP2040D positive chemically amplified resist for SCALPEL mask fabrication [4343-79]

B. Lu, Z. Masnyj, P. Mangat, K. Nordquist, E. Ainley, D. Resnick

Chemically amplified deep UV resists for electron-beam lithography applications [4343-80] H. Chen, C. Hsu, B. Chen, F. Ko, J. Yang, T. Huang, T. Chu

Optimal lithium targets for laser-plasma lithography [4343-82] A. Andreev, T. Ueda, J. Limpouch

Optical lithography at a 126-nm wavelength [4343-84] H. Kang, A. Bourov, B. Smith

Mix and match of nanoimprint and UV lithography [4343-85] F. Reuther, K. Pfeiffer, M. Fink, G. Gruetzner, H. Schulz, H. Scheer, F. Gaboriau, C. Cardinaud

Volume 4344 Metrology, Inspection, and Process Control for Microlithography XV

SESSION 1 INVITED SESSION

From compliance to control: off-roadmap metrology for low-k1 lithography [4344-1] C. Ausschnitt

SESSION 2 DEFECTS I

Open-contact failure detection of via holes by using voltage contrast [4344-2] H. Nishiyama, M. Nozoe, K. Aramaki, O. Watanabe, Y. Ikeda

Method for prevention of unopened contact hole in dual-damascene process [4344-3] G. Lyu, C. Kim, S. Lee, H. Yang, D. Lee, J. Yoo, J. Lee, Y. Kim, J. Nam, W. Han

SESSION 3 DEFECTS II

Inspectability study of advanced photomasks with OPC structures [4344-9] M. Cross, K. Bhattacharyya

Secondary-electron image profiles using bias voltage technique in deep contact hole [4344-75] Y. Ko, D. Joy, N. Sullivan, M. Mastovich

SESSION 4 AFM METROLOGY

High-precision metrology by means of a novel stereo imaging technique based on atomic force microscopy [4344-10]

B. Aumond, K. Youcef-Toumi

Electric force microscopy with a single carbon nanotube tip [4344-11] J. Dagata, F. Chien, S. Gwo, K. Morimoto, T. Inoue, J. Itoh, H. Yokoyama

Automated search method for AFM and profilers [4344-12] M. Ray, Y. Martin

SESSION 5 OVERLAY I

W-CMP alignment using ASML's ATHENA system on an I-line stepper [4344-13] K. Prasad, D. Rajan, Y. Tan, G. Sun, S. Morgan, M. Phillips, B. Ng

Chemical mechanical planarization process induced within lot overlay variation in 0.20-um DRAM: solution and simulation model [4344-14]

C. Chen, B. Huang, W. Lee, W. Chung, H. Hou

Evaluation of overlay measurement target designs for Cu dual-damascene process [4344-15] M. Mukherjee-Roy, R. Kumar, G. Samudra

Evaluation of overlay performance by using air shower at the prealignment [4344-16] A. Ghosh, Y. Tan, D. Rajan, G. Sun

Advances in process overlay [4344-17] P. Hinnen, H. Megens, M. van der Schaar, R. van Haren, E. Mos, S. Lalbahadoersing, F. Bornebroek, D. Laidler

Comprehensive analysis of statistical and model-based overlay lot disposition methods [4344-19] D. Crow, K. Flugaur, J. Pellegrini, E. Joubert

SESSION 6 STANDARDS

Problem with submicrometer-linewidth standards and a proposed solution [4344-20] J. Potzick

Edge determination for polycrystalline silicon lines on gate oxide [4344-21] J. Villarrubia, A. Vladar, J. Lowney, M. Postek

Silicon single atom steps as AFM height standards [4344-22] R. Dixson, N. Orji, J. Fu, V. Tsai, E. Williams, R. Kacker, T. Vorburger, H. Edwards, D. Cook, P. West, R. Nyffenegger

SESSION 7 CD CONTROL: MASK

Application of critical shape analyses to two-dimensional patterns [4344-23] M. Pochkowski, C. Mack, B. Kasprowicz

Impact and characterization of mask repair on wafer CD uniformity [4344-24] H. Chang, W. Shieh, J. Liu, B. Chu, L. Tu, J. Cheng, D. Wang, J. Cheng, S. Hentschel, V. Hsu

SPM characterizaton of anomalies in phase-shift mask and their effect on wafer features [4344-25] S. Muckenhirn, A. Meyyappan, K. Walch, M. Maslow, G. Vandenberghe, J. van Wingerden

Characterization of optical proximity correction features [4344-26] J. Allgair, M. Ivy, K. Lucas, J. Sturtevant, R. Elliott, C. Mack, C. MacNaughton, J. Miller, M. Pochkowski, M. Preil, J. Robinson, F. Santos

Atomic force metrology and 3D modeling of microtrenching in etched photomask features [4344-27] B. Todd, E. Miller, T. Pistor

SESSION 8 OVERLAY II

Light-diffraction-based overlay measurement [4344-28] J. Bischoff, R. Brunner, J. Bauer, U. Haak

Optimization of segmented alignment marks for advanced semidonductor fabrication processes Q. Wu, Z. Lu, G. Williams, F. Zach, B. Liegl

Sampling strategy and model to measure and compensate overlay errors [4344-30] C. Chien, K. Chang, C. Chen

Automated method for overlay sample plan optimization based on spatial variation modeling [4344-31] X. Chen, M. Preil, M. Le Goff-Dussable, M. Maenhoudt

SESSION 9 MODELING

Three-dimensional simulation of SEM imaging and charging [4344-32] L. Grella, G. Lorusso, T. Niemi, T. Chuang, D. Adler

SESSION 10 CD CONTROL I

Wafer edge dies yield improvements [4344-34] K. Gan, Y. Tan, G. Sun

Improvement in E2 nozzle performance: no imprint and less contamination [4344-35] K. Ang, S. Low, A. Lim, C. Lim, L. Loh, Y. Tan, X. Yang

Lens heating-induced focus drift of I-line step and scan: correction and control in a manufacturing environment [4344-101]

G. Ho, A. Cheng, C. Chen, C. Fang, M. Li, I. Chang, P. Chu, Y. Chu, K. Shu, C. Huang, H. Yeh, H. Shiao, H. Lan

Control of resist flow process for sub-0.15-um small contact hole by latent image [4344-37] B. Kim, S. Lee, D. Lee, J. Lee, J. Nam

Mechanism of deep-UV photoresist tail on inorganic antireflective layer film [4344-38] S. Lee, S. Lee, M. Kim, S. Park, J. Nam, S. Lee

Advanced statistical process control: controlling sub-0.18um lithography and other processes [4344-39] A. Zeidler, K. Veenstra, T. Zavecz

Evaluation of the dual-exposure technique [4344-40] H. Sewell, V. Bunze, N. DeLuca, D. McCafferty

SESSION 11 CD CONTROL II

Investigation of full-field CD control of sub-100-nm gate features by phase-shift 248-nm lithography [4344-41]

M. Fritze, B. Tyrrell, D. Astolfi, P. Davis, B. Wheeler, R. Mallen, J. Jarmolowicz, S. Cann, D. Chan, P. Rhyins, M. Mastovich, N. Sullivan, R. Brandom, C. Carney, J. Ferri, B. Blachowicz

Practical monitor and control of SEM astigmatism in manufacturing [4344-43] S. Dupuis, T. Hayes, C. Archie, E. Solecky

SESSION 12 BEYOND CD: FEATURE SHAPE AND METROLOGY FOR PROCESS CONTROL

Determination of best focus and exposure dose using CD-SEM sidewall imaging [4344-44] T. Marschner, G. Eytan, O. Dror

Three-dimensional top-down metrology: a viable alternative to AFM or cross-section? [4344-45] E. Solecky, C. Archie, T. Hayes, G. Banke, R. Cornell

Metrology and analysis of two-dimensional SEM patterns [4344-46] C. Mack, S. Jug, R. Jones, P. Apte, S. Williams, M. Pochkowski

Monitoring printing fidelity with image correlation measurements on the CD SEM [4344-47] C. Archie, E. Solecky, T. Hayes, G. Banke

SESSION 13 NEW TECHNOLOGIES

Initial results with a point projection microscope [4344-49] B. Frost, D. Joy

High-accuracy EUV metrology of PTB using synchrotron radiation [4344-50] F. Scholze, B. Beckhoff, G. Brandt, R. Fliegauf, A. Gottwald, R. Klein, B. Meyer, U. Schwarz, R. Thornagel, J. Tuemmler, K. Vogel, J. Weser, G. Ulm

Feature-shape and line-edge roughness measurement of deep submicron lithographic structures using small-angle neutron scattering [4344-51]

E. Lin, W. Wu, Q. Lin, M. Angelopoulos

DualBeam metrology: a new technique for optimizing 0.13-um photo processes [4344-52] S. Berger, D. Desloge, R. Virgalla, T. Davis, T. Paxton, D. Witko

SESSION 14 SCATTEROMETRY

Asymmetric line profile measurement using angular scatterometry [4344-54] C. Raymond, M. Littau, T. Pitts, P. Nagy

Measurement precision of optical scatterometry [4344-55] P. Logofatu, J. McNeil

Gauge control for sub-170-nm DRAM product features [4344-36] N. Lafferty, C. Gould, M. Littau, C. Raymond

Implementation of spectroscopic critical dimension (SCD) (TM) for gate CD control and stepper characterization [4344-57]

J. Allgair, D. Benoit, M. Drew, R. Hershey, L. Litt, P. Herrera, U. Whitney, M. Guevremont, A. Levy, S. Lakkapragada

Scatterometry: a metrology for subwavelength surface-relief gratings [4344-58] P. Logofatu, J. McNeil

Electromagnetic scatterometry applied to in-situ metrology [4344-60] M. Yeung, E. Barouch

SESSION 15 LATE BREAKING NEWS

Haidinger interferometer for silicon wafer TTV measurement [4344-62] R. Parks, L. Shao, A. Davies, C. Evans

High-speed mapping of intertransistor overlay variations using active electrical metrology [4344-63] X. Ouyang, C. Berglund, R. Pease

Comparison of edge detection methods using a prototype overlay calibration artifact [4344-64] R. Silver, J. Jun, E. Kornegay, R. Morton

SESSION 16 300-MM PRODUCTION

Microeconomics of 300-mm process module control [4344-61] K. Monahan, A. Chatterjee, G. Falessi, A. Levy, M. Stoller

SESSION 18 POSTER SESSION

Monte Carlo model of charging in resists in e-beam lithography [4344-33] Y. Ko, D. Joy

Scanning probe position encoder (SPPE): a new approach for high-precision and high-speed position measurement system [4344-65]

T. Ohara

Process development and impurities analysis for the bottom antireflective coating material [4344-66] F. Ko, H. Chen, T. Huang, H. Cheng, C. Ko, T. Chu

Improving the measurement algorithm for alignment [4344-67] S. Nakajima, Y. Kanaya, A. Takahashi, K. Yoshida, H. Mizutani

Electrical characterization of an ion-beam-mixed metal/polymer system [4344-68] R. Huang, R. Giedd

Application of SMIF isolation to lithography processes for contamination control [4344-69] S. Zhu

Postdevelopment defect evaluation [4344-71] O. Miyahara, Y. Kiba, Y. Ono

Wafer scale error induced by bottom antireflective coating [4344-73] D. Kim, J. Jeong, B. Nam, Y. Hwang, Y. Song

Swing curve phase and amplitude effects in optical lithography [4344-74] B. Martin, T. Tighe, G. Arthur

Scanner and stepper intrafield distortion characterization: a comparison and correlation of current techniques [4344-76]

B. Martinick, W. Roberts

Enhancing the rules for optical proximity correction to improve process latitude [4344-77] B. Martin, G. Arthur

Electrical linewidth measurement for next-generation lithography [4344-79] J. Kye, H. Levinson

Optimization of dielectric antireflective coatings on a transparent substrate in sub-half-micron CMOS technology [4344-80]

G. Arthur, B. Martin, C. Wallace

193-nm metrology: facing severe e-beam/resist interaction phenomena [4344-81] M. Vasconi, M. Bollin, G. Cotti, L. Pain, V. Tirard

CD SEM carry-over effect investigation [4344-82] A. Chernakova, A. Fan

Wafer-induced reading error in metal sputtering process [4344-83] D. Kim, S. Oh, G. Yeo, Y. Bae, J. Kim, Y. Kim

Bulge testing of single- and dual-layer thin films [4344-84] D. Huston, W. Sauter, P. Bunt, B. Esser

Extended ATHENA alignment performance and application for the 100-nm technology node [4344-85] R. Navarro, S. Keij, A. den Boef, S. Schets, F. van Bilsen, G. Simons, R. Schuurhuis, J. Burghoorn

193-nm photoresist shrinkage after electron-beam exposure [4344-87] B. Su, G. Eytan, A. Romano

Impact of attenuated PSM repair for 130-nm polygate lithography process [4344-88] X. Shi, S. Hsu, R. Socha, J. Chen, A. Cheng, C. Su, J. Cheng, A. Chen, H. Lin, D. Wang, D. Chen, A. Lin, W.

Conley, D. Metzger, S. Desai, P. Imamura, M. Sherrill

Scatterometry for shallow trench isolation (STI) process metrology [4344-89] C. Raymond, M. Littau, R. Markle, M. Purdy

Measurement of sidewall, line, and line-edge roughness with scanning probe microscopy [4344-90] K. Walch, A. Meyyappan, S. Muckenhirn, J. Margail

Foot (bottom corner) measurement of a structure with SPM [4344-91] A. Meyyappan, M. Klos, S. Muckenhirn

Prevention of optics and resist contamination in 300-mm lithography: improvements in chemical air filtration [4344-93]

D. Kinkead, A. Grayfer, O. Kishkovich

CD monitoring of critical photo layers in 6-in. GaAs IC process [4344-94] Y. Liu, I. Black, K. Xie

CD measurement of re-entry (overhang) obtained by liftoff techniques in 6-in. GaAs IC process [4344-95] Y. Liu, I. Black

SEM sentinel-SEM performance measurement system [4344-96] B. Damazo, A. Vladar, A. Ling, M. Donmez, M. Postek, E. Jayewardene

Lihtography process optimization for 130-nm polygate mask and the impact of mask error factor S. Hsu, X. Shi, R. Socha, J. Chen, J. Yee, M. Anath, S. Desai, P. Imamura, M. Sherrill, Y. Tseng, H. Chang, J. Kao,

A. Tseng, W. Liu, A. Chen, A. Lin, J. Kujten, E. Jacobs, A. Verhappen

Impact of optimized illumination upon simple lambda-based design rules for low-K1 lithography S. Postnikov, K. Lucas, K. Wimmer

Experimental determination of the impact of polysilicon LER on sub-100-nm transistor performance [4344-99]

K. Patterson, J. Sturtevant, J. Alvis, N. Benavides, D. Bonser, N. Cave, C. Nelson-Thomas, W. Taylor, K. Turnquest

Redefining critical in critical dimension metrology [4344-100] F. Askary, N. Sullivan

Reference Material 8091: new scanning electron microscope sharpness standard [4344-104] A. Vladar, M. Postek, N. Zhang, R. Larrabee, S. Jones, R. Hajdaj

Active monitoring and control of electron-beam-induced contamination [4344-105] A. Vladar, M. Postek, R. Vane

Interferometric testing of photomask substrate flatness [4344-106] C. Evans, R. Parks, L. Shao, T. Schmitz, A. Davies

Innovative techniques for automatic multi-CD-SEM image quality monitoring and matching [4344-107] H. Zhou, C. Wang, J. Pratt

Using pattern quality confirmation to control a metal-level DUV process with a top-down CD-SEM [4344-108]

C. Liang, H. Zhou, M. Boehm, R. Jackson, C. Wang, M. Slessor

Volume 4345 Advances in Resist Technology and Processing XVIII

SESSION 1 FUNDAMENTAL STUDIES I

Experimental approaches for assessing interfacial behavior of polymer films during dissolution in aqueous base [4345-1]

W. Hinsberg, S. Lee, H. Ito, D. Horne, K. Kanazawa

Mechanistic understanding of line-end shortening [4345-2] M. Stewart, G. Schmid, S. Postnikov, C. Willson

Image collapse issues in photoresist [4345-3] J. Simons, D. Goldfarb, M. Angelopoulos, S. Messick, W. Moreau, C. Robinson, J. de Pablo, P. Nealey

SESSION 2 FUNDAMENTAL STUDIES II

Optimum tone for various feature types: positive versus negative [4345-4] T. Brunner, C. Fonseca

Understanding nonlinear dissolution rates in photoresists [4345-5] S. Burns, A. Gardiner, V. Krukonis, P. Wetmore, J. Lutkenhaus, G. Schmid, L. Flanagin, C. Willson

SESSION 3 ARF MATERIALS I

IBM 193-nm bilayer resist: materials, lithographic performance, and optimization [4345-7] R. Kwong, P. Varanasi, M. Lawson, T. Hughes, G. Jordhamo, M. Khojasteh, A. Mahorowala, R. Sooriyakumaran, P. Brock, C. Larson, D. Fenzel-Alexander, H. Truong, R. Allen

ArF negative resist system using androsterone structure with delta-hydroxy acid for 100-nm phase shifting lithography [4345-8]

Y. Yokoyama, T. Hattori, K. Kimura, T. Tanaka, H. Shiraishi

SESSION 4 ARF MATERIALS II

Base additives for use in a single layer 193-nm resist based upon poly(norbornene/maleic anhydride/acrylic acid/tert-butyl acrylate) [4345-9]

F. Houlihan, D. Person, O. Nalamasu, I. Rushkin, O. Dimov, E. Reichmanis

Line-edge roughness in positive-tone chemically amplified resists: effect of additives and processing conditions [4345-128]

Q. Lin, D. Goldfarb, M. Angelopoulos, S. Sriram, J. Moore

193-nm single-layer resists based on advanced materials [4345-11] N. Shida, T. Ushirogouchi, K. Asakawa, Y. Funaki, A. Takaragi, K. Tsutsumi, K. Inoue, T. Nakano

Improved lithographic performance of 193-nm photoresists based on cycloolefin/maleic anhydride copolymer by employing mixed PAGs [4345-12]

S. Choi, Y. Choi, Y. Kim, S. Kim, D. Kim, J. Kim, C. Koh, G. Lee, J. Jung, K. Baik

Comparison of acid-generating efficiencies in 248 and 193-nm photoresists [4345-14] J. Cameron, N. Chan, K. Moore, G. Pohlers

SESSION 5 PROCESSING AND EXAMINATION I

Improved lithographic performance for resists based on polymers having a vinyl ether-maleic anhydride (VEMA) backbone [4345-16]

H. Kim, S. Choi, D. Jung, S. Lee, S. Lee, Y. Kang, S. Woo, J. Moon, R. Kavanagh, G. Barclay, G. Orsula, J. Mattia,

S. Caporale, T. Adams, T. Tanaka, D. Kang

Thermal properties of COMA materials [4345-17] I. Rushkin, B. Beauchemin, O. Dimov, T. Kocab, A. Medina, T. Sarubbi, M. Bowden

Modification of 193-nm (ArF) photoresists by electron beam stabilization [4345-18] P. Martens, S. Yamamoto, K. Edamatsu, Y. Uetani, L. Pain, R. Palla, M. Ross, W. Livesay

Novel high-performance ArF resist for sub-100-nm lithography [4345-19] G. Lee, C. Koh, J. Jung, M. Jung, K. Kong, J. Kim, K. Shin, S. Choi, Y. Kim, Y. Choi, D. Kim

Novel hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate for 193-nm resist compositions [4345-20]

M. Rahman, D. McKenzie, J. Bae, T. Kudo, W. Kim, M. Padmanaban, R. Dammel

SESSION 6 PROCESSING AND EXAMINATION II

Optimization of ArF resist for 100-nm node: DOE and fine-tuning of basic platform [4345-21] K. Kim, G. Wells, W. Kim, Y. Choi, S. Choi, Y. Kim, D. Kim

CD changes of 193-nm resists during SEM measurement [4345-22] T. Kudo, J. Bae, R. Dammel, W. Kim, D. McKenzie, M. Rahman, M. Padmanaban, W. Ng

Investigation on the mechanism of the 193-nm resist linewidth reduction during the SEM measurement [4345-23]

C. Wu, W. Huang, K. Chen, C. Archie, M. Lagus

Process optimization for sub-100-nm gate patterns using phase edge lithography [4345-24] K. van Ingen Schenau, B. Vleeming, W. Gehoel-van Ansem, P. Wong, G. Vandenberghe

Mechanism studies of scanning electron microscope measurement effects on 193-nm photoresists and the development of improved line-width measurement methods [4345-129]

T. Sarrubi, M. Ross, M. Neisser, T. Kocab, B. Beauchemin, W. Livesay, S. Wong, W. Ng

SESSION 7 KRF PROCESSING AND MATERIALS

Development of resists for thermal flow process applicable to mass production [4345-26] Y. Kang, S. Woo, S. Choi, J. Moon

Novel routes toward sub-70-nm contact windows by using new KrF photoresist [4345-27] J. Kim, C. Koh, G. Lee, J. Jung, K. Shin

High resolution patterning in chemically amplified resists: the effect of film thickness [4345-28] D. Medeiros, W. Moreau, K. Petrillo, M. Chauhan, W. Huang, C. Magg, D. Goldfarb, M. Angelopoulos, P. Nealey

Resist composition effects on ultimate resolution of negative-tone chemically amplified resists L. Pain, C. Gourgon, K. Patterson, B. Scarfogliere, S. Tedesco, G. Fanget, B. Dal'zotto, M. Ribeiro, T. Kusumoto, M. Suetsugu, R. Hanawa

Integration of ultrathin resist processes into MPU IC manufacturing flows [4345-30] J. Cobb, W. Conley, T. Guenther, F. Huang, J. Lee, T. Lii, S. Dakshina-Murthy, C. Parker, S. Usmani, W. Wu, S. Hector

SESSION 8 VUV SECTION I

Polymer design for 157-nm chemically amplified resists [4345-31] H. Ito, G. Wallraff, P. Brock, N. Fender, H. Truong, G. Breyta, D. Miller, M. Sherwood, R. Allen

Experimental VUV absorbance study of fluorine-functionalized polystyrenes [4345-32] R. Kunz, R. Sinta, M. Sworin, W. Mowers, T. Fedynyshyn, V. Liberman, J. Curtin

High-resolution fluorocarbon-based resist for 157-nm lithography [4345-33] T. Fedynyshyn, R. Kunz, R. Sinta, M. Sworin, W. Mowers, R. Goodman, S. Doran

Encapsulated inorganic resist technology applied to 157-nm lithography [4345-34] T. Fedynyshyn, R. Sinta, M. Sworin, R. Goodman, S. Doran, I. Sondi, E. Matijevic

Silicon-containing resists for 157-nm applications [4345-35] R. Sooriyakumaran, D. Fenzel-Alexander, N. Fender, G. Wallraff, R. Allen

All Co2-processed 157-nm fluoropolymer-containing photoresist systems [4345-127] C. McAdams, D. Flowers, E. Hoggan, R. Carbonell, J. DeSimone

Characterization of thin and ultrathin polymer and resist films [4345-37] D. Goldfarb, Q. Lin, M. Angelopoulos, C. Soles, E. Lin, W. Wu

SESSION 9 VUV SECTION II

Perfect photoresist for 157nm imaging [4345-38] W. Conley, J. Byers, K. Dean, S. Hansen, J. Finders, S. Sinkwitz

Transparent resins for 157-nm lithography [4345-39] R. Dammel, R. Sakamuri, A. Romano, R. Vicari, C. Hacker, W. Conley, D. Miller

Application of top surface imaging process to 157-nm lithography [4345-40] I. Satou, M. Watanabe, H. Watanabe, T. Itani

Resist materials for 157-nm lithography [4345-41] M. Toriumi, S. Ishikawa, S. Miyoshi, T. Naito, T. Yamazaki, M. Watanabe, T. Itani

Effect of fluorinated monomer unit introduction to KrF resin system in F2 lithography [4345-42] Y. Uetani, K. Hashimoto, Y. Miya, I. Yoshida, M. Takigawa, R. Hanawa

SESSION 10 VUV SECTION III

Resist materials for 157-nm microlithography: an update [4345-43] R. Hung, H. Tran, B. Trinque, T. Chiba, S. Yamada, D. Sanders, E. Connor, R. Grubbs, J. Klopp, J. Frechet, B. Thomas, G. Shafer, D. DesMarteau, W. Conley, C. Willson

Theoretical calculations of photoabsorption of several alicyclic molecules in the vacuum ultraviolet region [4345-44]

N. Matsuzawa, A. Ishitani, D. Dixon, T. Uda

Top surface imaging at 157-nm [4345-45] A. Jamieson, M. Somervell, H. Tran, R. Hung, S. MacDonald, C. Willson

Characterization of new aromatic polymers for 157-nm photoresist applications [4345-46] N. Fender, P. Brock, W. Chau, S. Bangsaruntip, A. Mahorowala, G. Wallraff, W. Hinsberg, C. Larson, H. Ito, G. Breyta, K. Burnham, H. Truong, P. Lawson, R. Allen

157-nm imaging using thick single-layer resists [4345-47] M. Crawford, A. Feiring, J. Feldman, R. French, V. Petrov, F. Schadt, R. Smalley, F. Zumsteg

SESSION 11 UNDERSTANDING MOLECULAR CONTAMINATION IN LITHOGRAPHY: JOINT SESSION

Photoresist outgassing at 157 nm exposure [4345-126] S. Hien, S. Angood, D. Ashworth, S. Basset, T. Bloomstein, K. Dean, R. Kunz, D. Miller, S. Patel, G. Rich

SESSION 12 POSTER SESSION

Effect of development process time on the surface of photoresist with various chemical compositions investigated by atomic force microscopy [4345-48]

C. Ko, S. Oh, J. Kim, C. Song, S. Lee

Continuous metal removal technique for resist resins [4345-51] S. Wanat, D. McKenzie, M. Rahman

Resist rehydration during thick film processing [4345-53] O. Lehar, M. Spak, S. Meyer, R. Dammel, C. Brodsky, C. Willson

Development of an edge bead remover (EBR) for thick films [4345-54] J. Oberlander, E. Sison, C. Traynor, J. Griffin

Novel photoacid generators for chemically amplified resists with g-line, i-line, and DUV exposure T. Asakura, H. Yamato, A. Matsumoto, M. Ohwa

Spin coating properties of SU-8 thick-layer photoresist [4345-56] R. Chen, C. Cheng

Reduction of internal stress in a SU-8-like negative tone photoresist for MEMS applications by chemical modification [4345-57]

R. Ruhmann, G. Ahrens, A. Schuetz, J. Voskuhl, G. Gruetzner

Photolithographic evaluation of various photoresist materials for mask-making applications [4345-58] B. Singh, W. Montgomery

Novel CA resists with photoacid generator in polymer chain [4345-59] H. Wu, K. Gonsalves

Investigation on dissolution rate effect of newly prepared polystyrene copolymer on the profiles of DUV resists [4345-60]

H. Kim, Y. Chung, Y. Choi, Y. Kim, D. Kim

Novel deep UV photoresist with thermally crosslinkable photoacid generator [4345-62] C. Noh, S. Lee, B. Moon, K. Honda

Rational design of bleachable nonchemically amplified DUV photoactive compounds [4345-63] B. Rathsack, P. Tattersall, C. Tabery, K. Lou, T. Stachowiak, D. Medeiros, J. Albelo, P. Pirogovsky, D. McKean, C. Willson

BiIn: a sensitive bimetallic thermal resist [4345-65] G. Chapman, Y. Tu, M. Sarunic, J. Dhaliwal

Novel develop application method to improve critical dimension control [4345-66] K. Sakamoto

Thin resist process having high dry-etching resistance in 0.13-um KrF lithography [4345-67] M. Watanabe, S. Sasaki, S. Yabe, T. Taguchi

Novel negative photoresist process for 0.18 um dual damascene [4345-69] L. Shiu, C. Lai, F. Liang, H. Chen, L. Chen, S. Chou

Development of DUV resists for zero angle and angled implant applications [4345-70] P. Fallon, M. Cronin, J. Lachowski, P. Valerio, L. Bachetti, J. Georger, M. Mori, D. Tomes, K. Wynja

Advanced KrF chemical amplified photoresists for 0.13-um lithography [4345-72] Q. Lin, M. Sack

Formulation optimizations for variable DUV resist thickness applications based on the same polymer matrix [4345-73]

K. Schlicht, B. Maxwell, J. Ferri, M. Toukhy

Dependence of resist profile on exposed area ratio [4345-74] E. Shiobara, D. Kawamura, K. Matsunaga, Y. Onishi

Evaluation of I-line and DUV photoresists for high-density optical disc mastering [4345-75] R. Tacken, E. Rodenburg, M. van der Veer, J. van Vegchel, R. Eijmberts

Toward 0.1-um contact hole process by using water-soluble organic overcoating material (WASOOM)-- Resist flow technology III: study on WASOOM, top flare, and etch characterization [4345-76]

J. Chun, C. Maeng, M. Tesauro, J. Sturtevant, J. Oberlander, A. Romano, J. Sagan, R. Dammel

Ar ion implantation into resist for etching resistance improvement [4345-77] A. Yamaguchi, A. Nakae, K. Tsujita

Dissolution performance of device pattern with low-impact development [4345-78] S. Ito, K. Hayasaki, H. Nakamura

Photolithographic evaluation of deep UV resist materials for mask-making applications [4345-104] W. Montgomery, A. Buxbaum, W. Rodrigues, J. Albelo, S. Fuller

193 SLR system based on COMA/acryl hybrid system [4345-15] M. Yamamoto, K. Murata, H. Ishii, S. Ebata, T. Kajita, T. Shimokawa

Novel 193-nm photoresist based on Olefin-containing lactones [4345-80] K. Yoon, D. Jung, S. Lee, S. Lee, S. Choi, S. Woo, J. Moon

Effect of end group structures of methacrylate polymers on ArF photoresist performances [4345-81] H. Momose, S. Wakabayashi, T. Fujiwara, K. Ichimura, J. Nakauchi

Lithographic behavior of carboxylate-based dissolution inhibitors and the effect of blending [4345-82] F. Houlihan, Z. Yan, E. Reichmanis, G. Dabbagh, K. Bolan, O. Nalamasu, I. Rushkin, O. Dimov

193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries [4345-125]

T. Kajita, Y. Nishimura, M. Yamamoto, H. Ishii, A. Soyano, A. Kataoka, M. Slezak, M. Shimizu, P. Varanasi, G. Jordahamo, M. Lawson, R. Chen, W. Brunsvold, W. Li, R. Allen, H. Ito, H. Truong, T. Wallow

193-nm contact photoresist reflow feasibility study [4345-25] K. Lucas, M. Slezak, M. Ercken, F. Van Roey

Investigation of electron beam stabilization of 193-nm photoresists [4345-83] M. Kim, J. Park, H. Kim, B. Jun, M. Gil, B. Kim, M. Ross, W. Livesay

Negative-tone cycloolefin photoresist for 193-nm lithography [4345-84] S. Fu, K. Hsieh, L. Wang

Sumitomo resist on various BARC substrates using SVGL micrascan 193 [4345-85] M. Rajaratnam, G. Baxter, M. Riggs, P. Tasaico, J. Zimmerman, J. Beach, P. Holland, C. Morris, K. Spurlock

Design and performance of photoresist materials for ArF lithography [4345-86] H. Kim, D. Jung, S. Lee, S. Choi, S. Woo, R. Kavanagh, G. Barclay, R. Blacksmith, D. Kang, G. Pohlers, J.

Cameron, J. Mattia, S. Caporale, T. Penniman, L. Joesten, J. Thackeray

Postmodification as a way to improve the lithographic performance of resist materials [4345-87] W. Li, P. Varanasi, M. Lawson, T. Hughes, G. Jordhamo, R. Allen, H. Ito

ArF resist for contact hole application [4345-88] K. Chen, M. Lawson, T. Hughes, W. Brunsvold, P. Varanasi, R. Keller, G. Jordhamo

Novel chemically amplified positive resist containing acetal-type crosslinker of poly(3,3'-dimethoxypropene) for 193-nm top surface imaging process [4345-89]

C. Koh, J. Jung, M. Kim, K. Kong, G. Lee, M. Jung, J. Kim, K. Shin

Organic BARC process evaluation for via first dual-damascene patterning [4345-90] C. Tan, M. Mukherjee-Roy, W. Jo, R. Kumar, P. Foo, S. Sathappan, S. Ngooi

Development of 193-nm organic BARC [4345-91] T. Kishioka, S. Arase, K. Ishii, K. Mizusawa, H. Fukuro

High-etch-rate type 248-nm bottom antireflective coatings [4345-93] T. Enomoto, S. Arase, K. Mizusawa, H. Fukuro

New fast-etching bottom antireflective coatings for 248-nm lithography [4345-94] R. Puligadda, R. Huang, C. Cox, J. Lamb, M. Arjona, J. Claypool

Development of full-fill bottom antireflective coatings for dual-damascene process [4345-95] Y. Wang, X. Wu, G. Xu, J. Lamb, J. Sullivan, J. Claypool, J. Backus, S. Trautman, X. Shao, S. Takei, Y. Sone, K. Mizusawa, H. Fukuro

Improved crosslinkable polymeric binders for 193-nm bottom antireflective coatings (BARCs) [4345-96] J. Meador, X. Shao, M. Bhave, C. Cox, J. Thompson, D. Thomas, S. Gibbons, A. Farnsworth, M. Rich

Novel conformal organic antireflective coatings for advanced I-line lithography [4345-97] S. Deshpande, K. Nowak, S. Fowler, P. Williams, M. Arjona

Planarizing ARs for dual-damascene processing [4345-98] E. Pavelchek, M. Cernigliaro, P. Trefonas, A. Kwok, S. Coley

SU8C resist for electron beam lithography [4345-100] W. Wong, E. Pun

New advances in resist system for next-generation lithography [4345-101] Y. Hu, W. He, K. Gonsalves, L. Merhari

Creation of low-molecular-weight organic resists for nanometer lithography [4345-103] T. Kadota, M. Yoshiiwa, H. Kageyama, F. Wakaya, K. Gamo, Y. Shirota

Control of line edge roughness of ultrathin resist films subjected to EUV exposure [4345-105] M. Ryoo, S. Shirayone, H. Oizumi, N. Matsuzawa, S. Irie, E. Yano, S. Okazaki

Improved notch model for resist dissolution in lithography simulation [4345-108] S. Robertson, E. Pavelchek, W. Hoppe, R. Wildfeuer

Improved resolution of thick film resist (verification by simulation) [4345-109] Y. Sensu, A. Sekiguchi, Y. Miyake

Simulation of 193-nm photoresists based on different polymer platforms [4345-110] D. Kang, S. Robertson, E. Pavelchek

Development of a bond contribution model for structure: property correlations in dry etch studies [4345-111]

T. Yu, P. Ching, C. Ober, S. Deshpande, R. Puligadda

Quantitative description of phenolic polymer dissolution using the concept of gel layer [4345-112] S. Choi, J. Cho

Modification of development parameters of 193-nm chemically amplified resist with pattern density [4345-113]

E. Seo, Y. Sohn, H. Bak, H. Oh, S. Woo, N. Seong, H. Cho

Analysis of the relation between exposure parameters and critical dimension by response surface model [4345-114]

D. Sohn, Y. Sohn, H. Bak, H. Oh

Survey of chemically amplified resist models and simulator algorithms [4345-115] E. Croffie, L. Yuan, M. Cheng, A. Neureuther

Three-dimensional post-exposure modeling and its applications [4345-116] L. Yuan, M. Cheng, E. Croffie, A. Neureuther

Analysis of deprotection reaction for chemically amplified resists by using FT-IR spectrometer with exposure tool [4345-117]

Y. Miyake, M. Isono, A. Sekiguchi

Modeling the impact of thermal history during post-exposure bake on the lithographic performance of chemically amplified resists [4345-118]

M. Smith, C. Mack, J. Petersen

Examination of a simplified reaction-diffusion model for post-exposure bake of chemically amplified resists [4345-119]

M. Smith, C. Mack

Understanding molecular-level effects during post-exposure processing [4345-120] G. Schmid, M. Smith, C. Mack, V. Singh, S. Burns, C. Willson

New polymer for 157-nm single-layer resist based on fluorine-containing acryl copolymer [4345-36] T. Ogata, K. Endo, H. Komano, T. Nakayama

Evaluation of the standard addition method to determine rate constants for acid generation in chemically amplified photoresist at 157 nm [4345-121]

A. Pawloski, C. Szmanda, P. Nealey

Dissolution behavior of fluoroalcohol-substituted polystyrenes [4345-122] D. Hall, B. Osborn, K. Patterson, S. Burns, C. Willson

Interlayer dielectric process for LSI circuits using positive photosensitive polyimide synthesized by block-copolymerization [4345-124]

M. Aoyagi, S. Segawa, E. Jung, T. Itatani, M. Komuro, T. Sakamoto, H. Itatani, M. Miyamura, S. Matsumoto

Volume 4346 Optical Microlithography XIV

SESSION 1 LENS ABERRATIONS

Optimal lens assignment through measured aberrations [4346-1] N. Seong, Y. Kang, H. Cho, J. Moon

Aberration measurement using in-situ two-beam interferometry [4346-2] J. Kirk, G. Kunkel, A. Wong

Behavior of lens aberrations as a function of wavelength on KrF and ArF lithography scanners [4346-41] M. Terry, I. Lalovic, G. Wells, A. Smith

New phase-shift gratings for measuring aberrations [4346-4] H. Nomura

Ring test aberration determination and device lithography correlation [4346-5] C. Garza, W. Conley, B. Roman, M. Schippers, J. Foster, J. Baselmans, K. Cummings, D. Flagello

SESSION 2 157-NM LITHOGRAPHY

Marathon evaluation of optical materials for 157-nm lithography [4346-6] V. Liberman, M. Rothschild, N. Efremow, S. Palmacci, J. Sedlacek, C. Van Peski, K. Orvek

157-nm photomask handling and infrastructure: requirements and feasibility [4346-7] J. Cullins, E. Muzio

Investigation of attenuated phase-shifting mask material for 157-nm lithography [4346-112] T. Onodera, T. Matsuo, T. Itani, H. Morimoto

SVG 157-nm lithography technical review [4346-9] T. Fahey, J. McClay, M. Hansen, B. Tirri, M. Lipson

Current status of Nikon's F2 exposure tool development [4346-10] N. Shiraishi, S. Owa, Y. Ohmura, T. Aoki, Y. Matsumoto, M. Hatasawa, T. Mori, I. Tanaka

Materials design and development of fluoropolymers for use as pellicles in 157-nm photolithography [4346-184]

R. French, J. Gordon, D. Jones, M. Lemon, R. Wheland, X. Zhang, F. Zumsteg, K. Sharp, W. Qiu

SESSION 3 ADVANCES IN OPC

Correction for etch proximity: new models and applications [4346-12] Y. Granik

Process dependencies of optical proximity corrections [4346-13] F. Zach, D. Samuels, A. Thomas, S. Butt

Model-based OPC for first-generation 193-nm lithography [4346-14] K. Lucas, J. Word, G. Vandenberghe, S. Verhaegen, R. Jonckheere

Mask considerations for manufacturing assist features [4346-15] J. Choi, W. Cho, B. Kim, S. Yang, S. Moon, S. Choi, W. Han, J. Sohn

Optimizing style options for subresolution assist features [4346-16] L. Liebmann, J. Bruce, W. Chu, M. Cross, I. Graur, J. Krueger, W. Leipold, S. Mansfield, A. McGuire, D. Sundling

SESSION 4 OPTIONS FOR THE 100-NM NODE

Can DUV take us below 100 nm? [4346-18] J. Finders, L. Jorritsma, M. Eurlings, R. Moerman, H. van Greevenbroek, J. van Schoot, D. Flagello, R. Socha, T. Stammler

ArF lithography for printing 100-nm gates on low-volume ASIC devices: CD budget issues related to various binary mask-making processes [4346-19]

Y. Trouiller, G. Fanget, C. Miramond, Y. Rody

ArF lithography options for 100-nm technologies [4346-20] G. Vandenberghe, Y. Kim, C. Delvaux, K. Lucas, S. Choi, M. Ercken, K. Ronse, B. Vleeming

100-nm node lithography with KrF? [4346-21] M. Fritze, B. Tyrrell, D. Astolfi, D. Yost, P. Davis, B. Wheeler, R. Mallen, J. Jarmolowicz, S. Cann, H. Liu, M. Ma, D. Chan, P. Rhyins, C. Carney, J. Ferri, B. Blachowicz

SESSION 5 LITHOGRAPHY FOR DRAM

Lithography process design for 4-Gb DRAM of 0.31 K1 with KrF [4346-22] J. Park, G. Yeo, I. Kim, B. Kim, J. Lee, H. Cho, J. Moon

Feasibility study of printing sub-100-nm with ArF lithography [4346-23] S. Kim, J. Hong, J. Park, T. Yoo, Y. Hyun, C. Bok, K. Shin

DRAM lithographic scaling in the sub-130-nm regime [4346-24] S. Bukofsky

Printing 130-nm DRAM isolation pattern: Zernike correlation and tool improvement [4346-25] J. van Schoot, N. Seong, B. Geh, M. Burkhardt, P. Graeupner, G. Reisinger, R. Rubingh, M. Suddendorf, J. Finders, E. Rikkers

Application of full-chip level optical proximity correction to memory device with sub-0.10-um design rule and ArF lithography [4346-26]

H. Yune, H. Kim, W. Kim, C. Ahn, Y. Ham, K. Shin

SESSION 6 PROCESS OPTIMIZATION AND CONTROL

The MEEF shall inherit the Earth [4346-27] W. Conley, C. Garza, M. Dusa, R. Socha, J. Bendik, C. Mack

Characterization of linewidth variation on 248- and 193-nm exposure tools [4346-182] A. Gabor, T. Brunner, J. Chen, N. Chen, S. Deshpande, R. Ferguson, D. Horak, S. Holmes, L. Liebmann, S. Mansfield, A. Molless, C. Progler, P. Rabidoux, D. Ryan, P. Talvi, L. Tsou, B. Vampatella, A. Wong, Q. Yang, C. Yu

Novel multiple resist patterning stacks for dual-damascene interconnection and resolution-enhanced patterns [4346-29]

I. Huang, J. Hwang, Y. Cheng, K. Hung, S. Chien

Trench pattern lithography for 0.13- and 0.10-um logic devices at 248-nm and 193-nm wavelengths [4346-30]

Y. Wang, H. Lin, S. Yu, C. Chen, Y. Ku, A. Yen, B. Lin

CD control of low-k-factor step-and-scan lithography [4346-31] C. Ausschnitt, C. Progler, W. Chu

Statistical method for influence of exposure and focus error on CD variation [4346-32] S. Mimotogi

SESSION 7 SIMULATION

ArF imaging modeling by using resist simulation and pattern matching [4346-33] M. Cheng, A. Neureuther

Impact of acid/quencher behavior on lithography performance [4346-34] H. Fukuda, K. Hattori, T. Hagiwara

Simplified models for edge transitions in rigorous mask modeling [4346-35] K. Adam, A. Neureuther

Topography effects and wave aberrations in advanced PSM technology [4346-36] A. Erdmann

Application of 3D EMF simulation for development and optimization of alternating phase-shifting masks [4346-37]

A. Semmler, L. Mader, A. Elsner, R. Koehle, U. Griesinger, C. Noelscher

CD control for two-dimensional features in future technology nodes [4346-38] S. Verhaegen, R. Gordon, R. Jonckheere, M. McCallum, K. Ronse

SESSION 8 SYSTEM CHARACTERIZATION

Measurement of transmittance variation of projection lenses depending on the light paths using a grating-pinhole mask [4346-39]

K. Sato, S. Inoue

Reduction of dose effects due to the transient absorption in fused silica at 193 nm [4346-40] G. Kivenzor, R. Guerra

Aerial image measurement methods for fast aberration set-up and illumination pupil verification H. van der Laan, M. Dierichs, H. van Greevenbroek, E. McCoo, F. Stoffels, R. Pongers, R. Willekers

Method to predict CD variation caused by dynamic scanning focus errors [4346-42] T. Hagiwara, H. Mizutani, S. Okita, N. Kondo

SESSION 9 ALTERNATING PSM IMPLEMENTATION

Alternating phase-shifting mask with reduced aberration sensitivity: lithography considerations A. Wong, L. Liebmann, A. Molless

Evaluation of 3D alternating PSM structures using mask topography simulation, and AIMS at lambda=193nm [4346-44]

C. Tabery, C. Spence

Patterning 0.1-um device by using hybrid PSM [4346-45] C. Hsu, R. Chu, T. Wang, C. Liao

Patterning 80-nm gates using 248-nm lithography: an approach for 0.13-um VLSI manufacturing [4346-46] C. Wang, C. Lai, J. Huang, H. Liu

Effects of complementary phase-shift imaging on gate CD control [4346-47] C. Nelson-Thomas, M. Kling, M. Thompson, R. Wang, N. Cave, C. Fu

SESSION 10 NOVEL RET APPROACHES AND ISSUES

Mutually optimizing resolution enhancement techniques: illumination, APSM, assist feature OPC, and gray bars [4346-48]

B. Smith

Optimum mask and source patterns to print a given shape [4346-49] A. Rosenbluth, S. Bukofsky, M. Hibbs, K. Lai, A. Molless, R. Singh, A. Wong

Innovative imaging of ultrafine line without using any strong RET [4346-50] S. Nakao, K. Narimatsu, T. Miyagi, S. Ogawa, N. Tamada, A. Nakae, A. Tokui, K. Tsujita, I. Arimoto, W. Wakamiya

Binary halftone chromeless PSM technology for quarter-lambda optical lithography [4346-51] J. Chen, J. Petersen, R. Socha, T. Laidig, K. Wampler, K. Nakagawa, G. Hughes, S. MacDonald, W. Ng

Exposure latitude requirements for high yield with photon flux-limited laser sources [4346-8] S. O'Brien, M. Mason

SESSION 11 EXPOSURE TOOL SUBSYSTEMS

Performance results of a new generation of 300-mm lithography systems [4346-53] B. Sluijk, T. Castenmiller, R. du Croo de Jongh, H. Jasper, T. Modderman, L. Levasier, E. Loopstra, G. Savenije, M. Boonman, H. Cox

New projection lens system for KrF exposure scanning tool [4346-54] T. Matsuyama, J. Misawa, Y. Shibazaki

Optical design forms for DUV and VUV microlithographic processes [4346-55] J. Webb, J. Bentley, P. Michaloski, A. Phillips, T. Tienvieri

High-power 193-nm excimer lasers for DUV lithography [4346-56] R. Paetzel, K. Vogler, H. Albrecht, T. Schroeder, I. Bragin, J. Kleinschmidt, W. Zschocke

Aberration control for advanced step-and-scan systems using pupil plane engineering [4346-57] H. Sewell, D. Cote, A. Guzman, C. Lafiandra, T. O'Neil

New-generation projection optics for microlithography [4346-181] T. Kanda, T. Kato

SESSION 12 ARF PRODUCTION EQUIPMENT

High-numerical-aperture 193-nm exposure tool [4346-59] H. Sewell, D. Cote, D. Williamson, M. Oskotsky, L. Sakin, T. O'Neil, J. Zimmerman, R. Zimmerman, M. Nelson, C. Mason, D. Ahouse, H. Harrold, P. Lamastra, D. Callan

New scanners for the 100-nm era [4346-60] K. Iwamoto, F. Sakai

ArF step-and-scan system with 0.75 NA for the 0.10um node [4346-61] B. Vleeming, B. Heskamp, H. Bakker, L. Verstappen, J. Finders, J. Stoeten, R. Boerret, O. Roempp

Higher-NA ArF scanning exposure tool on new platform for further 100-nm technology node [4346-62] S. Mori

SESSION 13 UNDERSTANDING MOLECULAR CONTAMINATION IN LITHOGRAPHY: JOINT SESSION

Present status of development of gas-purging and chemically clean technologies at ASET [4346-63] Y. Fukuda, S. Takeuchi, T. Aoki, S. Owa, F. Yoshida, Y. Kawasa, A. Sumitani, K. Egawa, T. Watanabe, K. Nakao

UV cleaning of contaminated 157-nm reticles [4346-64] T. Bloomstein, V. Liberman, M. Rothschild, N. Efremow, D. Hardy, S. Palmacci

Protecting 248-nm and 193-nm lithography from airborne molecular contamination during semiconductor fabrication [4346-65]

A. Grayfer, O. Kishkovich, D. Ruede

Controlled contamination of optics under 157-nm laser irradiation [4346-66] T. Bloomstein, V. Liberman, S. Palmacci, M. Rothschild

SESSION 14 POSTER SESSION

Patterning of random interconnect using double exposure of strong-type PSMs [4346-67] H. Fukuda, T. Hagiwara

Multiple-focus exposure in strong phase-shift lithography: improvement of CD-focus characteristics and CD controllability [4346-68]

M. Fujimoto, T. Yasuzato

Lens aberration control for fine patterning with PSM [4346-69] T. Kudo, S. Hirukawa, T. Nakashima, K. Matsumoto

Alternating PSM mask performance: a study of multiple fabrication technique results [4346-70] M. McCallum, P. Gabella, G. Shelden, K. Kjoller, E. Miller

Multiple pitch transmission and phase analysis of six types of strong phase-shifting masks [4346-72] D. Gerold, J. Petersen, M. Levenson

Alternating phase-shifting mask application: effect of width and geometry of shifters, 3D EMF simulation and experimental verification [4346-73]

A. Semmler, A. Elsner, R. Koehle, L. Mader, R. Pforr, C. Noelscher, C. Friedrich, J. Knobloch, U. Griesinger

Theoretical and experimental optimization of numerical aperture and partial coherence for complementary phase-shift processes [4346-74]

C. Brodsky, C. Nelson-Thomas, N. Cave, J. Sturtevant

Doubly exposed patterning using mutually one-pitch step-shifted alternating phase-shift masks S. Lee, D. Chung, I. Shin, Y. Kim, S. Choi, W. Han, J. Sohn

Feasibility study on the ArF attenuated phase-shift mask for 100-nm node lithography [4346-76] S. Koo, S. Kim, S. Paek, C. Ahn, Y. Ham, K. Shin

Random pattern formation by attenuated non-phase-shift assist pattern mask [4346-77] S. Nakao, A. Tokui, K. Tsujita, I. Arimoto, W. Wakamiya

Application of attenuated phase-shifting masks to sub-130-nm lithography [4346-78] C. Koo, L. Choo, Q. Lin, S. Tan, H. Lee, S. Tam, A. See

Novel Si-based composite thin films for 193/157-nm attenuated phase-shift mask (APSM) applications [4346-79]

S. Chey, C. Guarnieri, K. Babich, K. Pope, D. Goldfarb, M. Angelopoulos, K. Racette, M. Hibbs, M. Gibson,

K. Kimmel

High-transmission attenuated PSM as a viable optical extension technique [4346-80] N. Kachwala

SCAA mask exposures and Phase Phirst designs for 100 nm and below [4346-183] M. Levenson, T. Ebihara, M. Yamachika

Evaluation of new mask materials for improved lithography performance [4346-83] B. Kasprowicz, R. Priestley

Reduction of mask error enhancement factor (MEEF) by the optimum exposure dose self-adjusted mask [4346-84]

S. Matsuura, T. Uchiyama, T. Hashimoto

Mask error factor: critical dimension variation across different tools, features, and exposure conditions [4346-85]

I. Jekauc, W. Roberts, C. Hampe

Resolution capability and the mask error enhancement function (MEEF) for ArF and KrF lithography [4346-86]

M. Plat, C. Spence, C. Lyons, A. Wilkison

Effects of mask bias on the mask error enhancement factor (MEEF) of contact holes [4346-87] D. Kang, S. Robertson, M. Reilly, E. Pavelchek

Comparison study on mask error factor in 100-nm ArF and KrF lithography [4346-88] T. Eom, Y. Hyun, C. Kim, C. Bok, K. Shin

Mask error enhancement factor for sub-0.13-um lithography [4346-89] S. Tan, Q. Lin, C. Quan, C. Tay, A. See

Hidden CD errors due to reticle imperfection [4346-90] Z. Ma, S. Zheng

Automatic defect severity scoring for 193-nm reticle defect inspection [4346-190] L. Karklin, M. Altamirano, L. Cai, K. Phan, C. Spence

Lithography challenges of dual-damascence process in 0.13 um era [4346-92] L. Chen, L. Shiu, C. Tsai, C. Chang, T. Kang, S. Chou

Evaluating device design rules based on lithographic capability [4346-93] S. Warrick, C. Smith, M. Monroe, C. Casteel, M. Zaleski

100-nm gate lithography for double-gate transistors [4346-94] A. Krasnoperova, Y. Zhang, I. Babich, J. Treichler, J. Yoon, K. Guarini, P. Solomon

Process latitude comparison of advanced DUV photoresists to latest-generation 193-nm photoresists [4346-95]

L. Joesten, M. Reilly, F. Linskens, C. Jehoul, C. Parker

Characterization study of an aqueous developable photosensitive polyimide on 300-mm wafers W. Flack, S. Kulas, C. Franklin

Process improvements for ultrathick photoresist using a broadband stepper [4346-97] W. Flack, H. Nguyen, E. Capsuto

When is bilayer thin-film imaging suitable: comparison with single-layer resists [4346-98] S. Halle, A. Thomas, M. Armacost, T. Dalton, X. Chen, S. Bukofsky, O. Genz, Z. Lu, S. Butt, Z. Chen, R. Ferguson, E. Coker, R. Leidy, Q. Lin, A. Mahorowala, K. Babich, K. Petrillo, M. Angelopoulos, M. Ignatowicz, B. Bui

Photoresist thickness variation due to local and global topography [4346-99] J. Kim, H. Bak, Y. Sohn, I. An, K. Bang, H. Oh, W. Han

Carbon antireflective coating (ARC) technology for both KrF and ArF lithography [4346-100] Y. Kim, J. Lee, H. Cho, J. Moon

Aids for driving lithography hard: wafer-level process control features [4346-101] E. Fisch, R. Bowley, J. Bruce, O. Bula

Optimum field-size strategy for DRAM mass production in low-k1 process [4346-102] C. Park, D. Yim, S. Lee, H. Yang, J. Choi, Y. Shin, C. Kim, J. Choi, K. Kang, S. Kim, D. Lee, G. Yoon

Molecular base sensitivity studies of various DUV resists used in semiconductor fabrication [4346-105] D. Ruede, M. Ercken, T. Borgers

193 lithography and RELACS processing for BEOL lithography [4346-106] R. DellaGuardia, K. Petrillo, J. Chen, P. Rabidoux, T. Dalton, S. Holmes, L. Hadel, K. Malone, A. Mahorowala, S. Greco, R. Ferguson

Low-dielectric-constant FLARE 2.0 films as bottom antireflective coating layers for ArF lithography [4346-107]

H. Chen, H. Cheng, M. Li, F. Ko, T. Huang, T. Chu

High-NA swing curve effects [4346-28] T. Brunner, A. Gabor, C. Wu, N. Chen

Trench warfare!: fitting photons for fine-feature fabrication [4346-188] J. Kuijten, W. Conley, R. Socha, S. van de Goor, S. Hsu, D. Smith, M. Oliveras, K. Strozenski

Spectral measurement of ultra line-narrowed F2 laser [4346-108] O. Wakabayashi, J. Sakuma, T. Suzuki, H. Kubo, N. Kitatochi, T. Suganuma, T. Nakaike, T. Kumazaki, K. Hotta, H. Mizoguchi, K. Nakao, T. Togashi, Y. Nabekawa, S. Watanabe

Long pulse duration of F2 laser for 157-nm lithography [4346-109] H. Watanabe, N. Kitatochi, K. Kakizaki, A. Tada, J. Sakuma, T. Ariga, K. Hotta

Formation of absorption bands in F-doped silica under excimer laser exposure [4346-110] C. Smith, L. Moore

Evaluation of characteristics of VUV optical materials irradiated by F2 laser [4346-111] Y. Itakura, F. Yoshida, Y. Kawasa, A. Sumitani, O. Wakabayashi, H. Mizoguchi

Applications of a grating shearing interferometer at 157 nm [4346-113] H. Schreiber, P. Dewa, M. Dunn, R. Hordin, S. Mack, B. Statt, P. Tompkins

157-nm Twyman-Green interferometer for lens testing [4346-114] B. Statt, P. Dewa, S. Mack, H. Schreiber, B. Stone, P. Tompkins

Advanced VUV spectrometer for F2 laser metrology [4346-115] E. Onkels, G. Rylov, R. Sandstrom

Study of obscuration in catadioptric lenses [4346-116] M. McCallum, B. Smith, S. Bassett, J. Cashmore, J. Webb

Long-run-time performance characteristics of a line-selected 2-kHz F2 laser for optical microlithography [4346-117]

G. Soumagne, S. Nagai, N. Hisanaga, S. Nanzai, Y. Ochiishi, A. Ohbu, J. Fujimoto, H. Mizoguchi

Optical damage testing of materials for use in 157-nm photolithographic systems [4346-119] R. Morton, T. Embree, Z. Bor, C. Van Peski

Challenge of the F2 laser for dioptric projection system [4346-120] T. Ariga, H. Watanabe, T. Kumazaki, N. Kitatochi, K. Sasano, Y. Ueno, T. Nishisaka, R. Nohdomi, K. Hotta, H. Mizoguchi, K. Nakao

Mechanical analysis of hard pellicles for 157-nm lithography [4346-121] P. Reu, A. Mikkelson, M. Schlax, E. Cotte, L. Siewert, R. Engelstad, E. Lovell, G. Dao, J. Zheng

Advanced F2-lasers for 157-nm lithography [4346-122] K. Vogler, I. Klaft, F. Voss, I. Bragin, E. Bergmann, T. Nagy, N. Niemoeller, R. Paetzel, S. Govorkov, G. Hua

Development and investigation of high-quality CaF2 used for 157-nm microlithography [4346-185] A. Engel, K. Knapp, L. Aschke, E. Moersen, W. Triebel, C. Chojetzki, S. Brueckner

Wavelength stabilization in an excimer laser source using piezoelectric active vibration control R. Spangler, R. Jacques, D. Brown, J. Algots, W. Partlo

Next-generation 193-nm laser for sub-100-nm lithography [4346-124] T. Duffey, G. Blumenstock, V. Fleurov, X. Pan, P. Newman, H. Glatzel, T. Watson, J. Erxmeyer, R. Kuschnereit, B. Weigl

Ultrahigh-repetition-rate ArF excimer laser with long pulse duration for 193-nm lithography [4346-126] K. Kakizaki, T. Matsunaga, Y. Sasaki, T. Inoue, S. Tanaka, A. Tada, H. Taniguchi, M. Arai, T. Igarashi

Challenges of laser spectrum metrology in 248- and 193-nm lithography [4346-127] A. Ershov, S. Smith

Ultranarrow-bandwidth 4-kHz ArF excimer laser for 193-nm lithography [4346-128] T. Saito, T. Matsunaga, K. Mitsuhashi, K. Terashima, T. Ohta, A. Tada, T. Ishihara, M. Yoshino, H. Tsushima, T. Enami, H. Tomaru, T. Igarashi

Br lamp for F2 laser wavelength calibration [4346-129] M. Yoshioka, T. Kitagawa, T. Arimoto, H. Matsuno, T. Hiramoto, T. Suzuki, K. Hotta

Effects of 95% integral vs. FWHM bandwidth specifications on lithographic imaging [4346-130] A. Kroyan, I. Lalovic, N. Farrar

High-resolution multigrating spectrometer for high-quality deep-UV light source production [4346-131] T. Suzuki, H. Kubo, T. Suganuma, T. Yamashita, O. Wakabayashi, H. Mizoguchi

Investigation of cross-field wavefront aberrations of KrF lithography exposure systems as a function of excimer laser bandwidth [4346-125]

I. Lalovic, A. Kroyan, N. Farrar, D. Taitano, P. Zambon, A. Smith

ArF-laser-induced absorption in fused silica exposed to low fluence at 2000 Hz [4346-133] J. Moll

Linewidth asymmetry study to predict aberration in lithographic lenses [4346-134] J. Kye, M. Dusa, H. Levinson

Lens aberration measurement and analysis using a novel pattern [4346-135] B. Nam, B. Cho, J. Park, D. Kim, S. Baek, J. Jeong, B. Nam, Y. Hwang, Y. Song

Birefringence dispersion in fused silica for DUV lithography [4346-136] R. Priestley

Analyses of imaging performance degradation caused by birefringence residual in lens materials [4346-137]

Y. Unno, A. Suzuki

Evaluating the impact of spherical aberration on sub-0.2-um contact/via hole patterning [4346-138] S. Chou, J. Lou, C. Lai, F. Liang, L. Chen

Error separation technique for microlithographic lens testing with null configurations [4346-139] S. Mack, T. Rich, J. Webb, P. Dewa, H. Schreiber

Testing of optical components for microlithography at 193-nm and 157-nm [4346-140] K. Mann, O. Apel, G. Eckert, C. Goerling, U. Leinhos, B. Schaefer

Effect of hole shape error on lithography process window [4346-141] R. Kumar, M. Mukherjee-Roy, C. Tan

Detection of focus and spherical aberration by use of a phase grating [4346-142] J. Kirk, S. Schank, C. Lin

Aberration analysis using reconstructed aerial images of isolated contacts on attenuated phase-shift masks [4346-143]

F. Zach, C. Lin, J. Kirk

Fine-tune lens-heating-induced focus drift with different process and illumination settings [4346-144] Y. Cui

Application of the aberration ring test (ARTEMIS) to determine lens quality and predict its lithographic performance [4346-145]

M. Moers, H. van der Laan, M. Zellenrath, W. de Boeij, N. Beaudry, K. Cummings, A. van Zwol, A. Brecht, R. Willekers

Impact of flare on CD variation for 248-nm and 193-nm lithography systems [4346-146] A. Bourov, L. Litt, L. Zavyalova

Further pursuit of correlation between lens aberration content and imaging performance [4346-147] S. Slonaker

How lens aberrations influence lithographic imaging and how to reduce their effects [4346-148] G. Kunkel, W. Henke, I. Voigt

Achieving low-wavefront specifications for DUV lithography: impact of residual stress in HPFS fused silica [4346-149]

J. Ladison, J. Ellison, D. Allan, D. Fladd, A. Fanning, R. Priestley

Scattered light: the increasing problem for 193-nm exposure tools and beyond [4346-186] K. Lai, C. Wu, C. Progler

Design and fabrication of customized illumination patterns for low-k1 lithography: a diffractive approach [4346-150]

M. Himel, R. Hutchins, J. Colvin, M. Poutous, A. Kathman, A. Fedor

Optimal positions for SB assignment and the specification of SB width variation [4346-151] C. Lai, R. Liu, T. Gau, F. Liang, S. Chou, L. Shiu

Improvement of metal photo process margin with OPC and CMP for 0.14 um DRAM technology node and beyond [4346-152]

D. Bae, J. Bae, S. Sung, J. Park, S. Rhie, D. Shin, T. Chung, K. Kim

Challenges for the 100-nm node [4346-155] H. Sewell, P. Raval, V. Bunze

Printing high-density patterns with dark-field 193-nm lithography [4346-156] O. Wood, D. White, D. Tennant, R. Cirelli, J. Sweeney, M. Blakey, J. Griffith

Experimental model verification of the thermal response of optical reticles [4346-157] A. Abdo, P. Reu, M. Schlax, R. Engelstad, W. Beckman, J. Mitchell, E. Lovell

Accuracy issues in the finite difference time domain simulation of photomask scattering [4346-158] T. Pistor

Simulation of optical lithography from distorted photomasks [4346-159] Z. Cui, J. Du, Y. Zheng, Y. Guo

LAVA web-based remote simulation: enhancements for education and technology innovation [4346-160] S. Lee, K. Ng, T. Orimoto, J. Pittenger, T. Horie, K. Adam, M. Cheng, E. Croffie, Y. Deng, F. Gennari, T. Pistor, G. Robins, M. Williamson, B. Wu, L. Yuan, A. Neureuther

Simulation of exposure process in complex nonplanar 2D/3D resist-substrate structures [4346-161] V. Manuylov, M. Temkin

Advanced procedure to evaluate process performance at very low k1 based on device parameters linked to lithography and process data:II. Verification of cell layout based on integration of optical an

A. Balasinski, W. Iandolo, D. Joshi, L. Karklin, V. Axelrad

Impact of illumination coherence and polarization on the imaging of attenuated phase-shift masks [4346-163]

Z. Ma, C. Mack

Rigorous electromagnetic simulation applied to alignment systems [4346-164] Y. Deng, T. Pistor, A. Neureuther

Fully automatic side lobe detection and correction technique for attenuated phase-shift masks O. Toublan, N. Cobb, E. Sahouria

Asymmetric biasing for subgrid pattern adjustment [4346-167] A. Wong, L. Liebmann

Impact of scattering bar in the presence of lens aberrations [4346-168] A. Khoh, B. Minghetti, B. Choi, Y. Wu, G. Samudra

Optical proximity correction of critical layers in DRAM process of 0.12-um minimum feature size Y. Oh, J. Lee, K. Park, C. Go, S. Lim

Roles of NA, sigma, and lambda in low-k1 aerial image formation [4346-187] P. Brooker

Application of CD error budget analysis to ArF scanner performance [4346-170] S. Renwick, J. Brown

Validation of an intrafield overlay prediction process [4346-171] J. Guerrero, W. Roberts

Introduction of new techniques for matching overlay enhancement [4346-173] T. Kikuchi, Y. Ishii, N. Tokuda

Extremely high-NA high-throughput-scanner-compatible 4-kHz KrF excimer laser for DUV lithography [4346-174]

T. Matsunaga, T. Enami, K. Kakizaki, T. Saito, S. Tanaka, H. Nakarai, T. Inoue, T. Igarashi

Depth-of-focus analysis of subwavelength features [4346-176] T. Barrett

Aerial image sensor for self-calibration of wafer steppers [4346-177] T. Hagiwara, H. Mizutani, N. Kondo, J. Inoue, K. Kaneko, S. Higashibata