Verios™ XHR SEM · Verios™ XHR SEM Discover the world of Extreme High Resolution SEM The Verios...

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Product Data Key benefits • Best-in-class Elstar™ Schottky Monochromated (UC) FESEM technology and performance with sub-nanometer resolution from 1 to 30 kV • Innovative electron optics, including FEI’s patented UC gun (monochromator), constant power lenses and electrostatic scanning for accurate and stable imaging • Consistent measurement results with the ability to calibrate to a NIST-traceable standard at high magnification • Easy access to beam landing energies as low as 20 eV with very high resolution for true surface characterization • Advanced suite of high-sensitivity, in-column & below-the-lens detectors and signal filtering for low dose operation and optimal contrast selection • Unique imaging technologies and solutions, including the second generation of FEI’s advanced detectors, FEI SmartSCAN™ and DCFI to accurately image charging samples • Very high precision & stability, piezo-driven 100x100 mm stage in a large analytical chamber • Multiple navigation packages available, including fast and robust bit cell counting • Full analytical and prototyping capabilities Verios™ XHR SEM Discover the world of Extreme High Resolution SEM The Verios is the second generation of FEI’s leading XHR SEM family, offering sub- nanometer resolution over the full 1 keV to 30 keV energy range with excellent materials contrast. Its extraordinary low-voltage performance provides extremely precise, surface- specific information that has been unavailable previously from other techniques. Extends SEM Capability In the Semiconductor and Data Storage markets, the Verios’s unprecedented performance significantly extends SEM capability to the 22 nm node and below, offering a complete solution for basic research, process and material development, process control and failure analysis. It delivers accurate, repeatable measurement results, even on extremely sensitive materials. Combined with FEI’s IC3D TM metrology software, Verios provides the precise measurements needed to control the technology development process. The Verios features industry leading performance without compromising the high throughput, sample flexibility and ease of traditional SEM. The Highest Resolution and Contrast Required for Materials Research For Materials Scientists, the Verios enables important new insights by extending sub- nanometer characterization to novel materials being developed today (e.g., catalyst particles, nanotubes, porosities, interfaces, biological objects and other nanoscale structures). High-resolution, high-contrast images are obtained without the need to transition to TEM or other imaging techniques. Verios offers all the flexibility required from Research applications to accommodate large specimens like full wafers or metallurgical samples, perform fast analysis thanks to its high current mode or work on precise prototyping applications such as electron beam-induced direct deposition of materials or lithography. Boost Accuracy with Superior Performance The outstanding imaging capabilities of the Verios begin with the Elstar™ FESEM column. On top of its integrated monochromator (UC) and beam deceleration, which enables Verios’s unique low kV performance, the Elstar features other unique technologies such as constant power lenses for higher thermal stability and electrostatic scanning for higher deflection linearity which leads to better measurement accuracy. Its traditional through- the-lens detector, set for highest collection efficiency of SE (secondary electrons) and on-axis BSE (backscattered electrons), is complemented by two new in-column detectors and signal filtering capabilities for stunning resolution and refined materials contrast. Furthermore, an optional STEM (scanning transmission electron mode) detector provides superior performance on thin S/TEM samples. Empowered by its evolutionary xT software platform, the Verios addresses both the occasional user with a simple yet robust interface, and the SEM expert who can rely on the instrument’s flexibility and extended controls for XHR work.

Transcript of Verios™ XHR SEM · Verios™ XHR SEM Discover the world of Extreme High Resolution SEM The Verios...

  • Product Data

    Key benefits• Best-in-classElstar™SchottkyMonochromated(UC)FESEMtechnologyandperformancewithsub-nanometerresolutionfrom1to30kV

    • Innovativeelectronoptics,includingFEI’spatentedUCgun(monochromator),constantpowerlensesandelectrostaticscanningforaccurateandstableimaging

    • ConsistentmeasurementresultswiththeabilitytocalibratetoaNIST-traceablestandardathighmagnification

    • Easyaccesstobeamlandingenergiesaslowas20eVwithveryhighresolutionfortruesurfacecharacterization

    • Advancedsuiteofhigh-sensitivity,in-column&below-the-lensdetectorsandsignalfilteringforlowdoseoperationandoptimalcontrastselection

    • Uniqueimagingtechnologiesandsolutions,includingthesecondgenerationofFEI’sadvanceddetectors,FEISmartSCAN™andDCFItoaccuratelyimagechargingsamples

    • Veryhighprecision&stability,piezo-driven100x100mmstageinalargeanalyticalchamber

    • Multiplenavigationpackagesavailable,includingfastandrobustbitcellcounting

    • Fullanalyticalandprototypingcapabilities

    Verios™ XHR SEMDiscover the world of Extreme High Resolution SEM

    TheVeriosisthesecondgenerationofFEI’sleadingXHRSEMfamily,offeringsub-nanometerresolutionoverthefull1keVto30keVenergyrangewithexcellentmaterialscontrast.Itsextraordinarylow-voltageperformanceprovidesextremelyprecise,surface-specificinformationthathasbeenunavailablepreviouslyfromothertechniques.

    Extends SEM Capability IntheSemiconductorandDataStoragemarkets,theVerios’sunprecedentedperformancesignificantlyextendsSEMcapabilitytothe22nmnodeandbelow,offeringacompletesolutionforbasicresearch,processandmaterialdevelopment,processcontrolandfailureanalysis.Itdeliversaccurate,repeatablemeasurementresults,evenonextremelysensitivematerials.CombinedwithFEI’sIC3DTMmetrologysoftware,Veriosprovidestheprecisemeasurementsneededtocontrolthetechnologydevelopmentprocess.TheVeriosfeaturesindustryleadingperformancewithoutcompromisingthehighthroughput,sampleflexibilityandeaseoftraditionalSEM.

    The Highest Resolution and Contrast Required for Materials ResearchForMaterialsScientists,theVeriosenablesimportantnewinsightsbyextendingsub-nanometercharacterizationtonovelmaterialsbeingdevelopedtoday(e.g.,catalystparticles,nanotubes,porosities,interfaces,biologicalobjectsandothernanoscalestructures).High-resolution,high-contrastimagesareobtainedwithouttheneedtotransitiontoTEMorotherimagingtechniques.VeriosoffersalltheflexibilityrequiredfromResearchapplicationstoaccommodatelargespecimenslikefullwafersormetallurgicalsamples,performfastanalysisthankstoitshighcurrentmodeorworkonpreciseprototypingapplicationssuchaselectronbeam-induceddirectdepositionofmaterialsorlithography.

    Boost Accuracy with Superior PerformanceTheoutstandingimagingcapabilitiesoftheVeriosbeginwiththeElstar™FESEMcolumn.Ontopofitsintegratedmonochromator(UC)andbeamdeceleration,whichenablesVerios’suniquelowkVperformance,theElstarfeaturesotheruniquetechnologiessuchasconstantpowerlensesforhigherthermalstabilityandelectrostaticscanningforhigherdeflectionlinearitywhichleadstobettermeasurementaccuracy.Itstraditionalthrough-the-lensdetector,setforhighestcollectionefficiencyofSE(secondaryelectrons)andon-axisBSE(backscatteredelectrons),iscomplementedbytwonewin-columndetectorsandsignalfilteringcapabilitiesforstunningresolutionandrefinedmaterialscontrast.Furthermore,anoptionalSTEM(scanningtransmissionelectronmode)detectorprovidessuperiorperformanceonthinS/TEMsamples.

    EmpoweredbyitsevolutionaryxTsoftwareplatform,theVeriosaddressesboththeoccasionaluserwithasimpleyetrobustinterface,andtheSEMexpertwhocanrelyontheinstrument’sflexibilityandextendedcontrolsforXHRwork.

  • Product Data Verios™XHRSEM

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    • Everhart-ThornleySEdetector(ETD)• IRcameraforviewingsample/column• ChambermountedNav-Cam+™*• Retractablelowvoltage,highcontrastsolid-statebackscatterelectrondetector(DBS)**

    • RetractableSTEMdetectorwithBF/DF/HAADFsegments*• Integratedbeamcurrentmeasurement

    Chamber• E-beamandEDXcoincidencepointat4mmWD• 21ports

    Ultra high precision 5-axes piezo-motorized stage• X,Y=100mm• Z≥20mm• T=-10°to+60°• R=720°stroke• X,Yrepeatability0.5μm• X,Yaccuracy<1.5μm85%toleranceinterval• Mechanicallytilteucentricstagewith<5μmimagemotionwhentilting0°to52°

    • Compucentricrotationandtilt

    Sample sizes• Maximumsize:100mmdiameterwithfullrotation• Maximumsamplethickness(vialoadlock):19mmincl.stub• Maximumsamplethickness(viachamberdoor):19mmincl.stub• Weight:200g(incl.holder)

    Sample holders• Multi-stubholder**• Multi-samplecross-sectionalholder**• Singlestubmount,mountsdirectlyontostage• Variouswaferandcustomholder(s)availablebyrequest

    Image processor• Dwelltimerangefrom0.025to25000μs/pixel• Upto6144x4096pixels• Filetype:TIFF(8,16,24-bit),BMPorJPEG• Singleframeor4quadrantimagedisplay• SmartSCAN(256frameaverageorintegration,lineintegrationandaveraging,interlacedscanning)andDCFI(DriftCompensatedFrameIntegration)

    Essential specifications

    Electron optics

    ElstarXHRimmersionlensFESEMcolumn• Elstarelectrongunwith:

    – Schottkythermalfieldemitter– Hot-swapcapability– UCtechnology(monochromator)

    • 60degreedualobjectivelenswithpolepieceprotection• Heatedobjectiveapertures• Electrostaticscanning• ConstantPower™lenstechnology• Beamdecelerationwithstagebiasfrom-50Vto-4kV• IntegratedFastBeamBlanker*

    Source lifetime• Electronsourcelifetime:12months

    Electron beam resolution(site survey required to guarantee resolution specification)• Resolution@optimumWD

    – 0.6nmat30kV(STEM*)– 0.7nmat15kV– 0.7nmat1kV– 1.0nmat500V(ICD**)– 1.2nmat200V(ICD**)

    Maximum horizontal field width• E-beam:1.5mmatWD4mm

    Landing energy range• 20eV-30keV

    Probe current• E-beam:0.8pAupto100nA

    Vacuum system• 1x210l/sTMP• 1xPVP(drypump)• 2xIGP• Chambervacuum:<2.6*10-6mbar(after24hpumping)

    Detectors• Elstarin-lensSEdetector(TLD-SE)• Elstarin-lensBSEdetector(TLD-BSE)• Elstarin-columnSEdetector(ICD)**• Elstarin-columnBSEdetector(MD)**

    *=optional**=optionalforVerios460,

    standardforVerios460L

  • Product Data Verios™XHRSEM

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    System control• 32-bitGUIwithWindows® XP,keyboard,opticalmouse• Two24inchwidescreenLCDdisplays,WUXGA1920x1200pixels• Microscopecontrollingandsupportcomputersseamlesslysharingonekeyboardandmouse

    • Joystick**• Multifunctionalcontrolpanel**• Remotecontrol*

    Supporting software • 'Beamperquad'graphicaluserinterfaceconcept,withupto4simultaneouslyactivequads

    Software options • Webenableddataarchivesoftware*• Imageanalysissoftware*• iFASTforadvancedautomation*• MAPS™forautomaticacquisitionoflargeimagesandcorrelativework*

    • IC3Dmetrologyofflinesoftware**• CellNavigatorTMforbitcellnavigation**

    Documentation• On-linehelp• PreparedforRAPID™(remotediagnosticsupport)• FreeaccesstoFEIforownerson-lineresources

    Common accessories• Analysis:EDS*• Loadlock**• IntegratedPlasmaCleaner• FEICryoCleaner• ElectronBeamLithography:kitsfromRaith,Nabityorothervendors*

    • FEIacousticenclosure*• CryoSEM:Sampletransferandpreparation,cryostage• GasInjectionSystem(GIS)*• NISTtraceablemagnificationcalibrationsample*

    Consumables (partial list)• ReplacementSchottkyelectronsourcemodule• Aperturestripsforelectron

    Warranty and training • 1yearwarranty• Choiceofservicemaintenancecontracts• Choiceofoperation/applicationtrainingcontracts

    *=optional**=optionalforVerios460,

    standardforVerios460L

    MDdetector–Excellentmaterialscontrastonsemiconductormaterialssuchasthis32nmFlashdevice

    Sample courtesy of ChipWorks

    ICDDetector-ExceptionalsurfacesensitivityGoldonCarbon

  • ©2012.Weareconstantlyimprovingtheperformanceofourproducts,soallspecificationsaresubjecttochangewithoutnotice.Verios,Rapid,Nav-Cam+,ConstantPower,Elstar,SmartSCAN,MAPSandtheFEIlogoaretrademarksofFEICompany,andFEIisaregisteredtrademarkofFEICompany.Allothertrademarksbelongtotheirrespectiveowners.

    Learn more at FEI.com

    World HeadquartersPhone:+1.503.726.7500

    FEI EuropePhone:+31.40.23.56000

    FEI JapanPhone:+81.3.3740.0970

    FEI AsiaPhone:+65.6272.0050

    FEI AustraliaPhone:+61.7.3512.9100

    TÜVCertificationfordesign,manufacture,installationandsupportoffocusedion-andelectron-beammicroscopesfortheElectronics,LifeSciences,ResearchandNaturalResourcesmarkets.

    Learn more at FEI.com

    DS011407-2012

    Product Data Verios™XHRSEM

    Floor plan without enclosureFloor plan with enclosure

    Learn more at FEI.com

    World HeadquartersPhone:+1.503.726.7500

    FEI EuropePhone:+31.40.23.56000

    FEI JapanPhone:+81.3.3740.0970

    FEI AsiaPhone:+65.6272.0050

    FEI AustraliaPhone:+61.7.3512.9100

    TÜVCertificationfordesign,manufacture,installationandsupportoffocusedion-andelectron-beammicroscopesfortheElectronics,LifeSciences,ResearchandNaturalResourcesmarkets.

    Learn more at FEI.com

    Installation requirements

    (refer to pre-install guide for additional data)

    • Power:voltage100-240VAC,frequency50or60Hz±1%)• Powerconsumption:<3.0kVAforbasicmicroscope• Earthresistance:<0.1Ω• Environment:

    – temperature20°C±3°C– relativehumiditybelow80%RH,20°C– strayACmagneticfields:sitesurveyrequired– acousticsguidelines:Sitesurveyrequiredasfloorspectrumrelevant– floorvibrations:Sitesurveyrequiredasfloorspectrumrelevant

    • Doorwidthxheight:preferred1.2mx2.0m(minimum0.9mx2.0m)

    • Weight:columnconsole850kg• Drynitrogen• Compressedair:4to6bar-clean,dryandoilfree• Systemchiller• Vibrationisolationtable*

    DS011407-2012


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