Vendor Component Libraries Microwave Transistor...

Advanced Design System 1.5

Vendor Component LibrariesMicrowave Transistor Library

December 2000

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Copyright © 2000, Agilent Technologies. All Rights Reserved.

ii

Contents1 Microwave Transistor Library

Chip BJTs ................................................................................................................. 1-1Bipolarics Chip BJTs ................................................................................................ 1-2Agilent Technologies Chip BJTs ............................................................................... 1-2Motorola Chip BJTs .................................................................................................. 1-2NEC Chip BJTs ........................................................................................................ 1-2Siemens Chip BJTs .................................................................................................. 1-3Celeritek Chip FETs ................................................................................................. 1-3Fujitsu Chip FETs ..................................................................................................... 1-3HEMTs...................................................................................................................... 1-3

Chip HEMTs ....................................................................................................... 1-4Packaged HEMTs............................................................................................... 1-4

Fujitsu Chip HEMTs.................................................................................................. 1-5Microwave Technology Chip HEMTs ........................................................................ 1-5Mitsubishi Chip HEMTs ............................................................................................ 1-5NEC Chip HEMTs..................................................................................................... 1-5Okidata Chip HEMTs................................................................................................ 1-5Toshiba Chip HEMTs................................................................................................ 1-6Fujitsu Packaged HEMTs ......................................................................................... 1-6Mitsubishi Packaged HEMTs.................................................................................... 1-6NEC Packaged HEMTs ............................................................................................ 1-6Siemens Packaged HEMTs...................................................................................... 1-6Sony Packaged HEMTs............................................................................................ 1-7Chip GaAs FETs....................................................................................................... 1-7Harris Chip FETs...................................................................................................... 1-8Agilent Technologies Chip FETs............................................................................... 1-9Litton Chip FETs....................................................................................................... 1-9Microwave Technology Chip FETs ........................................................................... 1-9Mitsubishi Chip FETs................................................................................................ 1-9NEC Chip FETs ........................................................................................................ 1-9Okidata Chip FETs ................................................................................................... 1-10Plessey Chip FETs ................................................................................................... 1-10Raytheon Chip FETs ................................................................................................ 1-10Texas Instruments Chip FETs .................................................................................. 1-10Toshiba Chip FETs ................................................................................................... 1-10

A Microwave Transistor Library DataIndex

iii

Chapter 1: Microwave Transistor LibraryThe Microwave Transistor Library contains these nonlinear model types:

• Chip BJTs

• HEMTs

• Chip GaAs FETs

Note The library itself is a binary file named MicrowaveTransistorLibrary.librarywhich can be found in $HPEESOF_DIR/ComponentLibs/models.

Chip BJTsThe Chip BJTs consist of nonlinear models representing 90 parts from5 manufacturers. The BJTs available for selection from the Schematic window are:

• Bipolarics Chip BJTs

• Agilent Technologies Chip BJTs

• Motorola Chip BJTs

• NEC Chip BJTs

• Siemens Chip BJTs

The library components are listed in the following sections. The tables are organizedby manufacturer library group and the individual components provided in each groupare listed by component name along with relevant physical and electricalcharacteristics.

The tabulated Physical Specifications include:

Polarity: NPN or PNP

Maximum Electrical Specifications include:

Pdiss: Maximum dissipated power, mW

Vce: Maximum collector-emitter voltage, V

Ic: Maximum collector current, mA

Chip BJTs 1-1

Microwave Transistor Library

Typical Electrical Specifications include:

Vce: Typical collector operating voltage, V

Ic: Typical collector operating current, mA

Hfe: DC current gain at typical operating bias

Ft: Frequency at which Hfe is 3 dB below maximum value, GHz

Bipolarics Chip BJTsThe Bipolarics Chip BJTs include a single component installed in the library group.The naming convention for the component is cb_bit_<part number>_<modelidentifier>_<extraction date>.

Table A-1. Bipolarics Chip BJTs

Agilent Technologies Chip BJTsThe Agilent Technologies Chip BJTs include 18 components, representing individualparts. The naming convention for these components is cb_hp_<part number>_<modelidentifier>_<extraction date>.

Table A-2. Agilent Technologies Chip BJTs

Motorola Chip BJTsThe Motorola Chip BJTs include 12 components, representing individual parts. Thenaming convention for these components is cb_mot_<part number>_<modelidentifier>_<extraction date>.

Table A-3. Motorola Chip BJTs

NEC Chip BJTsThe NEC Chip BJTs include 29 components, representing individual parts. Thenaming convention for these components is cb_nec_<part number>_<modelidentifier>_<extraction date>.

Table A-4. NEC Chip BJTs

1-2 Bipolarics Chip BJTs

Siemens Chip BJTsThe Siemens Chip BJTs include 30 components, representing individual parts. Thenaming convention for these components is cb_sms_<part number>_<modelidentifier>_<extraction date>.

Table A-5. Siemens Chip BJTs

Celeritek Chip FETsThe Celeritek Chip FETs include 10 components, representing individual parts. Thenaming convention for these components is cf_ctk_<part number>_<modelidentifier>_<extraction date>.

Table A-6. Celeritek Chip FETs

Fujitsu Chip FETsThe Fujitsu Chip FETs include 25 components, representing individual parts. Thenaming convention for these components is cf_fuj_<part number>_<modelidentifier>_<extraction date>.

Table A-7. Fujitsu Chip FETs

HEMTsThe HEMTs consist of nonlinear models representing 34 HEMTs from8 manufacturers. The HEMTs available for selection from the Schematic window are:

• Fujitsu Chip and Packaged HEMTs

• Microwave Technology Chip HEMTs

• Mitsubishi Chip and Packaged HEMTs

• NEC Chip and Packaged HEMTs

• Okidata Chip HEMTs

• Siemens Packaged HEMTs

• Sony Packaged HEMTs

• Toshiba Chip HEMTs

Siemens Chip BJTs 1-3


Chip HEMTs

The library components are listed in tables, organized by manufacturer library group,and the individual components provided in each group are listed by component namealong with relevant physical and electrical characteristics.


Gw: Gate width, microns

Gl: Gate length, microns



Vbr: Breakdown voltage, V


Vd: Typical drain-source operating voltage

VIdss: Saturation current, mA, simulated using the model at typical Vds

Vt: Threshold gate voltage, V, simulated using the model at typical Vds

Packaged HEMTs

The library components are listed in tables, organized by manufacturer library groupand the individual components provided in each group are listed by component namealong with relevant physical and electrical characteristics.


Gw: gate width, microns

Gl: gate length, microns


Pdiss: maximum dissipated power, mW

Vbr: breakdown voltage, V.


Vds: typical drain-source operating voltage, V

Idss: saturation current, mA, simulated using the model at typical Vds

1-4 HEMTs

Vt: threshold gate voltage, V, simulated using the model at typical Vds

Fujitsu Chip HEMTsThe Fujitsu Chip HEMTs include 6 components, representing individual parts. Thenaming convention for these components is ch_fuj_<part number>_<modelidentifier>_<extraction date>.

Table A-8. Fujitsu Chip HEMTs

Microwave Technology Chip HEMTsThe Microwave Technology Chip HEMTs include 1 component, representing anindividual part. The naming convention for the component is ch_mwt_<partnumber>_<model identifier>_<extraction date>.

Table A-9. Microwave Technology Chip HEMTs

Mitsubishi Chip HEMTsThe Mitsubishi Chip HEMTs include a single component, representing an individualpart. The naming convention for the component is ch_mit_<part number>_<modelidentifier>_<extraction date>.

Table A-10. Mitsubishi Chip HEMTs

NEC Chip HEMTsThe NEC Chip HEMTs include 4 components, representing individual parts. Thenaming convention for these components is ch_nec_<part number>_<modelidentifier>_<extraction date>.

Table A-11. NEC Chip HEMTs

Okidata Chip HEMTsThe Okidata Chip HEMTs include 4 components, representing individual parts. Thenaming convention for these components is ch_oki_<part number>_<modelidentifier>_<extraction date>.

Fujitsu Chip HEMTs 1-5


Table A-12. Okidata Chip HEMTs

Toshiba Chip HEMTsThe Toshiba Chip HEMTs include 5 components, representing individual parts. Thenaming convention for these components is ch_tsb_<part number>_<modelidentifier>_<extraction date>.

Table A-13. Toshiba Chip HEMTs

Fujitsu Packaged HEMTsThe Fujitsu Packaged HEMTs include a single component, representing anindividual part. The naming convention for the component is ph_fuj_<partnumber>_<extraction date>.

Table A-14. Fujitsu Packaged HEMTs

Mitsubishi Packaged HEMTsThe Mitsubishi Packaged HEMTs include 3 components, representing individualparts. The naming convention for these components is ph_mit_<partnumber>_<extraction date>.

Table A-15. Mitsubishi Packaged HEMTs

NEC Packaged HEMTsThe NEC Packaged HEMTs include 4 components, representing individual parts. Thenaming convention for these components is ph_nec_<part number>_<extractiondate>.

Table A-16. NEC Packaged HEMTs

Siemens Packaged HEMTsThe Siemens Packaged HEMTs include 2 components, representing individual parts.The naming convention for these components is ph_sms_<part number>_<extractiondate>.

1-6 Toshiba Chip HEMTs

Table A-17. Siemens Packaged HEMTs

Sony Packaged HEMTsThe Sony Packaged HEMTs include 3 components, representing individual parts.The naming convention for these components is ph_sny_<part number>_<extractiondate>.

Table A-18. Sony Packaged HEMTs

Chip GaAs FETsThe Chip GaAs FETs consist of nonlinear models representing 153 parts from13 manufacturers. The FETs available for selection from the Schematic window are:

• Celeritek Chip GaAs FETs

• Fujitsu Chip GaAs FETs

• Harris Chip GaAs FETs

• Agilent Technologies Chip GaAs FETs

• Litton Chip GaAs FETs

• Microwave Technology Chip GaAs FETs

• Mitsubishi Chip GaAs FETs

• NEC Chip GaAs FETs

• Okidata Chip GaAs FETs

• Plessey Chip GaAs FETs

• Raytheon Chip GaAs FETs

• Texas Instruments Chip GaAs FETs

• Toshiba Chip GaAs FETs

The library components are listed in the following sections. The tables are organizedby manufacturer library group, and the individual components provided in eachgroup are listed by component name along with relevant physical and electricalcharacteristics.


Sony Packaged HEMTs 1-7


Gw: Gate width, microns

Gl: Gate length, microns



Vbr: Breakdown voltage, V


Vds: Typical drain-source operating voltage, V

Idss: Saturation current, mA, simulated using the model at typical Vds

Vt: Threshold gate voltage, V, simulated using the model at typical Vds

Model Validation data has been provided as a simple large-signal figure of merit forthe model. The validation was based on simulations of the model and measurementsof the associated device, conducted at 1 GHz. Validation data includes:

Vds: Drain-source operating voltage, V

Ids: Operating drain current, mA

P1dB, Sim: Output power for 1 dB compression, dBm, simulated using the modelat validation Vds, Ids. Values listed as na denote that the associated P1dBsimulation was not performed.

P1dB, Error: Absolute error between P1dB, Sim and P1dB measured, at thevalidation Vds, Ids. Values listed as na denote that the associated P1dBmeasurement is not available.

Harris Chip FETsThe Harris Chip FETs include 17 components, representing individual parts. Thenaming convention for these components is cf_hm_<part number>_<modelidentifier>_<extraction date>.

Table A-19. Harris Chip FETs

1-8 Harris Chip FETs

Agilent Technologies Chip FETsThe Agilent Technologies Chip FETs include 12 components, representing individualparts. The naming convention for these components is cf_hpa_<partnumber>_<model identifier>_<extraction date>.

Table A-20. Agilent Technologies Chip FETs

Litton Chip FETsThe Litton Chip FETs include 16 components, representing individual parts. Thenaming convention for these components is cf_lit_<part number>_<modelidentifier>_<extraction date>.

Table A-21. Litton Chip FETs

Microwave Technology Chip FETsThe Microwave Technology Chip FETs include 15 components, representingindividual parts. The naming convention for these components is cf_mwt_<partnumber>_<model identifier>_<extraction date>.

Table A-22. Microwave Technology Chip FETs

Mitsubishi Chip FETsThe Mitsubishi Chip FETs include 15 components, representing individual parts. Thenaming convention for these components is cf_mit_<part number>_<modelidentifier>_<extraction date>.

Table A-23. Mitsubishi Chip FETs

NEC Chip FETsThe NEC Chip FETs include 15 components, representing individual parts. Thenaming convention for these components is cf_nec_<part number>_<modelidentifier>_<extraction date>.

Table A-24. NEC Chip FETs

Agilent Technologies Chip FETs 1-9


Okidata Chip FETsThe Okidata Chip FETs include 2 components, representing individual parts. Thenaming convention for these components is cf_oki_<part number>_<modelidentifier>_<extraction date>.

Table A-25. Okidata Chip FETs

Plessey Chip FETsThe Plessey Chip FETs include 6 components, representing individual parts. Thenaming convention for these components is cf_ply_<part number>_<modelidentifier>_<extraction date>.

Table A-26. Plessey Chip FETs

Raytheon Chip FETsThe Raytheon Chip FETs include a single component, representing an individualpart. The naming convention for the component is cf_ray_<part number>_<modelidentifier>_<extraction date>.

Table A-27. Raytheon Chip FETs

Texas Instruments Chip FETsThe Texas Instruments Chip FETs include 3 components, representing individualparts. The naming convention for the component is cf_ti_<part number>_<modelidentifier>_<extraction date>.

Table A-28. Texas Instruments Chip FETs

Toshiba Chip FETsThe Toshiba Chip FETs include 15 components, representing individual parts. Thenaming convention for these components is cf_tsb_<part number>_<modelidentifier>_<extraction date>.

Table A-29. Toshiba Chip FETs

1-10 Okidata Chip FETs

Appendix A: Microwave Transistor LibraryData

Table A-1. Bipolarics Chip BJTs

Component Name

Physical Specification

MaximumElectricalSpecification

Typical ElectricalSpecification

Part Number Model PolarityPdissmW

VceV

IcmA

VceV

IcmA Hfe

FtGHz

cb_bit_B20V1320d00_19931130 B20V1320-00 eebjt2 NPN na na na na na na na

Table A-2. Agilent Technologies Chip BJTs

Component Name

Physical SpecificationMaximum ElectricalSpecification



VceV

IcmA

VceV

IcmA Hfe

FtGHz

cb_hp_AT00500_19921101 AT00500 bjt_gp NPN 500 12 50 8 20 150 9

cb_hpa_AT00500_19900404 AT00500 bjt_gp NPN 500 12 50 8 20 150 9

















na = not available

A-1

Analog Parts Library Data

Table A-3. Motorola Chip BJTs

Component Name





VceV

IcmA

VceV

IcmA Hfe

FtGHz

cb_mot_BFRC90_19931130 BFRC90 eebjt2 NPN 180 15 30 10 14 25-250 5

cb_mot_MRFC521_19921101 MRFC521 bjt_gp PNP 750 -10 -70 -8 -50 25-125 4.2

cb_mot_MRFC571_19931130 MRFC571 eebjt2 NPN 1500 10 70 8 50 50-300 8

cb_mot_MRFC572_19921101 MRFC572 bjt_gp NPN na na na na na na na

cb_mot_MRFC901_19921101 MFRC901 bjt_gp NPN na na na na na na na

cb_mot_MRFC911_19921101 MRFC911 bjt_gp NPN 400 12 40 10 30 30-200 5

cb_mot_MRFC911_19931130 MRFC911 eebjt2 NPN 400 12 40 10 30 30-200 5

cb_mot_MRFC9331_19931129 MRFC9331 eebjt2 NPN 50 8 2 1 1 80 5





na = not available

Table A-4. NEC Chip BJTs

Component Name





VceV

IcmA

VceV

IcmA Hfe

FtGHz

cb_nec_NE02100_19900412 NE02100 bjt_gp NPN 700 12 70 10 20 70 4.5


cb_nec_NE21900_19900307 NE21900 bjt_gp NPN 700 10 80 8 20 100 8


cb_nec_NE24300_19891121 NE24300 bjt_gp NPN 2750 16 110 8 50 20-200 10





cb_nec_NE46100_19950901 NE46100 bjt_gp NPN na na na na na na na

A-2


cb_nec_NE64400_19931130 NE64400 eebjt2 NPN 260 10 3.5 6 5 100 10
















cb_nec_NE85600_19960501 NE85600 eebjt2 NPN na na na na na na na

cb_nec_NE88900_19931124 NE88900 eebjt2 PNP 300 -12 -50 -5 -15 90 4

na = not available

Table A-4. NEC Chip BJTs (continued)

Component Name





VceV

IcmA

VceV

IcmA Hfe

FtGHz

-3

Table A-5. Siemens Chip BJTs

Component Name





VceV

IcmA

VceV

IcmA Hfe

FtGHz

cb_sms_T122_19960901 T122 bjt_gp NPN na na na na na na na












cb_sms_T309_19960901 T309 bjt_gp PNP na na na na na na na

















-4


na = not available

Table A-5. Siemens Chip BJTs (continued)

Component Name





VceV

IcmA

VceV

IcmA Hfe

FtGHz

-5

Table A-6. Celeritek Chip FETs

Component Name




PartNumber Model

Gwµm

Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_ctk_CF00101_19911201 CF00101 curtice 300 0.5 700 11.8 5.5 93.63 -1.8

cf_ctk_CF00101_19930609 CF00101 eefet3 300 0.5 700 11.8 5.5 93.63 -1.8

cf_ctk_CF00102_19911201 CF00102 curtice 300 0.5 700 10.9 5.5 71.3 -0.9

cf_ctk_CF00102_19930609 CF00102 eefet3 300 0.5 700 10.9 5.5 71.3 -0.9

cf_ctk_CF00301_19930609 CF00301 eefet3 600 0.5 1400 12.7 6 159.08 -1.7

cf_ctk_CF00302_19930609 CF00302 eefet3 600 0.5 1600 12.2 6 183.43 -1.2

cf_ctk_CF00401_19930609 CF00401 eefet3 150 0.5 400 13 5.5 34.73 -1.7

cf_ctk_CF00402_19930609 CF00402 eefet3 150 0.5 400 11.5 5.5 48.48 -1.5

cf_ctk_CF00501_19930730 CF00501 eefet3 1200 0.5 3000 12.1 6 226.97 -1.1

cf_ctk_CF01501_19930730 CF01501 eefet3 1200 0.5 3000 11.1 6 324 -1.7

Table A-7. Fujitsu Chip FETs

Component Name



PartNumber

Gwµm

Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_fuj_FLC081XP_19930730 FLC081XP eefet3 375 na 4160 21 10 303.47 -2

cf_fuj_FLC151XP_19930730 FLC151XP eefet3 750 na 8300 21.2 10 645.29 -2.2

cf_fuj_FLK012XP_19930730 FLK012XP eefet3 360 0.8 1150 21.6 10 73.41 -2.6


cf_fuj_FLK022XV_19930730 FLK022XV eefet3 600 0.8 1880 21.3 10 111.45 -2.3


cf_fuj_FLK052XV_19911201 FLK052XV curtice 1200 0.8 3750 22 10 252.54 -3

cf_fuj_FLK052XV_19930730 FLK052XV eefet3 1200 0.8 3750 22 10 252.54 -3


cf_fuj_FLK102XV_19911201 FLK102XV curtice 2400 0.8 7500 21.3 10 452.77 -2.3



cf_fuj_FLR014XP_19921218 FLR014XP eefet3 360 0.8 1150 15.4 8 82.66 -3.4

-6


cf_fuj_FLR016XV_19920211 FLR016XV curtice 300 0.25 1150 16.9 8 59.14 -1.9

cf_fuj_FLR016XV_19921218 FLR016XV eefet3 300 0.25 1150 16.9 8 59.14 -1.9

cf_fuj_FLR024XV_19921218 FLR024XV eefet3 600 0.8 1880 16.7 7.5 114.49 -2.7



cf_fuj_FLR054XV_19921219 FLR054XV eefet3 1200 0.8 3750 17.2 7.5 264.56 -3.2

cf_fuj_FLR056XV_19921219 FLR056XV eefet3 1200 0.25 3750 18 8 244.07 -3


cf_fuj_FSC10X_19921219 FSC10X eefet3 400 0.5 1250 6.4 3 63.21 -1.4

cf_fuj_FSX51X_19930730 FSX51X eefet3 300 1 1000 17.4 8 65.57 -2.4

cf_fuj_FSX52X_19930730 FSX52X eefet3 600 1 1500 18.7 8 166.97 -3.7

Table A-7. Fujitsu Chip FETs (continued)

Component Name



PartNumber

Gwµm

Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

-7

Table A-8. Fujitsu Chip HEMTs

Component Name



Part Number ModelGwµm

Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

ch_fuj_FHR02X_19921221 FHR02X eehemt1 na na 180 na 2 42.2 -1.06

ch_fuj_FHR10X_19930915 FHR10X eehemt1 na na 180 na 2 28.2 -1.27

ch_fuj_FHX04X_19930913 FHX04X eehemt1 na na 180 na 2 39.3 -0.9



ch_fuj_FHX35X_19930915 FHX35X eehemt1 200 0.25 290 na 3 32.8 -0.66

na = not available

Table A-9. Microwave Technology Chip HEMTs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

ch_mwt_MWTH4LN_19930915 MWT-H4LN eehemt1 180 0.3 280 na 4.5 29.6 -0.92

na = not available

Table A-10. Mitsubishi Chip HEMTs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

ch_mit_MGFC4416C_19930915 MGFC4416C eehemt1 na na 355 na 2 50.6 -0.86

na = not available

-8

Table A-11. NEC Chip HEMTs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

ch_nec_NE32400_19921222 NE32400 eehemt1 na 0.25 165 na 2 35.4 -0.74

ch_nec_NE32400_19940322 NE32400 hpfet na 0.25 165 na 2 35.4 -0.74

ch_nec_NE33200_19921223 NE33200 eehemt1 na 0.25 165 na 2 40.4 -0.67

ch_nec_NE33200_19940322 NE33200 hpfet na 0.25 165 na 2 40.4 -0.67

na = not available

Table A-12. Okidata Chip HEMTs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

ch_oki_KGA1770_19930609 KGA1770 eehemt1 300 0.3 200 na 2 17.5 -0.56




na = not available

Table A-13. Toshiba Chip HEMTs

Component Name



PartNumber Model

Gwµm

Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

ch_tsb_JS8901AS_19930913 JS8901AS eehemt1 200 0.5 200 na 2 16.9 -0.59



ch_tsb_JS8910AS_19921222 JS8910AS eehemt1 100 0.1 150 na 1.5 23.3 -0.73

ch_tsb_JS8911AS_19931207 JS8911AS hpfet na na na na na na na

na = not available

-9

Table A-14. Fujitsu Packaged HEMTs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

ph_fuj_FHX35LG_19921222 FHX35LG eehemt1 na na 290 na 3 40 -0.77

na = not available

Table A-15. Mitsubishi Packaged HEMTs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

ph_mit_MGF4301_19930915 MGF4301 eehemt1 na na 160 na 2 36.4 -0.75

ph_mit_MGF4916C_19930915 MGF4916C eehemt1 na 0.25 200 na 2 44.6 -0.79

ph_mit_MGF4918D_19930915 MGF4918D eehemt1 na 0.25 200 na 2 53.6 -0.79

na = not available

Table A-16. NEC Packaged HEMTs

Component Name



PartNumber Model

Gwµm

Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

ph_nec_NE32484A_19921222 NE32484A eehemt1 na 0.25 165 na 2 37.4 -0.79




na = not available

-10

Table A-17. Siemens Packaged HEMTs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

ph_sms_CFY66d08_19921221 CFY66-08 eehemt1 180 0.25 200 na 2 31.8 -0.82

ph_sms_CFY76d08_19921221 CFY76-08 eehemt1 180 0.25 180 na 2 31.8 -0.87

na = not available

Table A-18. Sony Packaged HEMTs

Component Name



PartNumber Model

Gwµm

Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

ph_sny_2SK676_19921217 2SK676 eehemt1 300 0.5 340 na 3 45.3 -2.04

ph_sny_2SK677_19921217 2SK677 eehemt1 360 0.5 340 na 3 61.8 -2.15

ph_sny_SGH5002F_19931224 SGH5002F eehemt1 300 0.5 340 na 3 49.1 -1.63

na = not available

Table A-19. Harris Chip FETs

Component Name





Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_hm_HMF0300_19921221 HMF0300 eefet3 300 0.5 1000 18.8 8 84.84 -3.8


cf_hm_HMF03100d100_19940317 HMF03100-100 hpfet na na na na na na na



cf_hm_HMF03300_19911201 HMF03300 curtice na na na na na na na

cf_hm_HMF03300_19940318 HMF03300 hpfet na na na na na na na




-11



cf_hm_HMF0610200_19921221 HMF0610200 eefet3 600 0.5 1000 10 4 135.61 -3

cf_hm_HMF06300_19940325 HMF06300 hpfet na na na na na na na




na = not available

Table A-19. Harris Chip FETs (continued)

Component Name





Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

-12

Table A-20. Agilent Technologies Chip FETs

Component Name



PartNumber Model

Gwµm

Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_hpa_ATF10100_19911201 ATF10100 curtice 250 0.3 430 8 4 62.4 -1

cf_hpa_ATF10100_19930609 ATF10100 eefet3 250 0.3 430 8 4 62.4 -1

cf_hpa_ATF13100_19911201 ATF13100 curtice 250 0.3 225 8.6 4 56.48 -1.6

cf_hpa_ATF13100_19930609 ATF13100 eefet3 250 0.3 225 8.6 4 56.48 -1.6






cf_hpa_ATF44100_19930730 ATF44100 eefet3 5000 0.3 8300 21.5 9 1093.28

-4.5



Table A-21. Litton Chip FETs

Component Name



PartNumber Model

Gwµm

Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_lit_LF0503A_19930609 LF0503A eefet3 280 0.3 300 8.5 4 46.24 -1.5

cf_lit_LF0777_19930609 LF0777 eefet3 280 0.3 300 7.3 3.5 39.48 -1.3

cf_lit_LF1503A_19911201 LF1503A curtice 280 0.8 300 9.1 4 76.72 -2.1



cf_lit_LF2502_19930609 LF2502 eefet3 250 0.5 450 8.3 4 31.94 -1.3

cf_lit_LF2503_19930609 LF2503 eefet3 280 0.5 500 9.4 4 60.58 -2.4

cf_lit_LF3501_19911201 LF3501 curtice 500 0.8 800 18.2 8 134.71 -2.4

cf_lit_LF3501_19930609 LF3501 eefet3 500 0.8 800 18.2 8 134.71 -2.4

cf_lit_LF3814_19930730 LF3814 eefet3 1400 0.8 3000 16.5 7 346.53 -3.5

cf_lit_LF3830_19930730 LF3830 eefet3 3000 0.5 9000 20.3 9 795.4 -3.3

-13

cf_lit_LF6828_19911201 LF6828 curtice 280 0.5 800 12.7 5.5 80.01 -2.7

cf_lit_LF6828_19930609 LF6828 eefet3 280 0.5 800 12.7 5.5 80.01 -2.7

cf_lit_LF6836_19911201 LF6836 curtice 360 0.5 800 12.4 5.5 115.51 -2.7

cf_lit_LF6836_19930609 LF6836 eefet3 360 0.5 800 12.4 5.5 115.51 -2.7

cf_lit_LF6872_19930730 LF6872 eefet3 720 0.5 1500 13.7 5.5 258.77 -3.7

Table A-21. Litton Chip FETs (continued)

Component Name



PartNumber Model

Gwµm

Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

-14

Table A-22. Microwave Technology Chip FETs

Component Name



PartNumber Model

Gwµm

Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_mwt_MWT13HP_19930730 MWT-13HP eefet3 1200 0.3 3000 13.6 6 298.67 -2.6

cf_mwt_MWT1HG_19921215 MWT-1HG eefet3 630 0.3 1200 11.2 5 165.8 -2.2


cf_mwt_MWT3HP_19911201 MWT-3HP curtice 300 0.3 750 13.7 6 99.45 -2.7


cf_mwt_MWT4LN_19930730 MWT-4LN eefet3 180 0.3 360 9.7 4.5 40.85 -1.7

cf_mwt_MWT4SN_19940325 MWT-4SN hpfet na na na na na na na

cf_mwt_MWT5HG_19930802 MWT-5HG eefet3 600 0.3 750 13.05 6 70 -2.05


cf_mwt_MWT7HP_19930730 MWT-7HP eefet3 250 0.3 600 8.7 4 77.55 -2

cf_mwt_MWT7LN_19930730 MWT-7LN eefet3 250 0.3 600 13.3 4 54.34 -6.3

cf_mwt_MWT7_19911201 MWT-7HP curtice 250 0.3 600 8.7 4 77.55 -2



cf_mwt_MWT9LN_19930730 MWT-9LN eefet3 750 0.3 1750 11.8 6 130.68 -1.2

na = not available

Table A-23. Mitsubishi Chip FETs

Component Name





Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_mit_MGFC1402_19921216 MGFC1402 eefet3 400 0.8 550 6.4 3 61.3 -1.4







-15



cf_mit_MGFC2407A_19930730 MGFC2407A eefet3 750 0.7 1500 21.4 10 140.85 -2.4

cf_mit_MGFC2407_19930609 MGFC2407 eefet3 750 0.6 1500 22 10 191.64 -3




cf_mit_MGFC2430K_19930730 MGFC2430K eefet3 3000 0.6 5000 21.5 10 547.88 -2.5

Table A-23. Mitsubishi Chip FETs (continued)

Component Name





Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

-16

Table A-24. NEC Chip FETs

Component Name





Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_nec_NE67300_19930730 NE67300 eefet3 300 0.3 400 6.5 3 72 -1.5

cf_nec_NE67300_37k_19931112 NE67300 hpfet 300 0.3 400 6.5 3 72 -1.5

cf_nec_NE71000_19930730 NE71000 eefet3 300 0.3 400 6.5 3 64.88 -1.5

cf_nec_NE71000hi_19920211 NE71000hi curtice na na na na na na na

cf_nec_NE72000_19930609 NE72000 eefet3 400 1 500 6.5 3 69.93 -1.5

cf_nec_NE76000_19930730 NE76000 eefet3 280 0.3 500 5.8 3 37.27 -0.8

cf_nec_NE76100_19921215 NE76100 eefet3 280 0.3 500 6 3 69.03 -1

cf_nec_NE800400_19911201 NE800400 curtice na na na na na na na

cf_nec_NE900000_19930730 NE900000 eefet3 400 0.5 800 18.2 8 115 -3.2

cf_nec_NE90000d12k_19931112 NE90000-12k hpfet na na na na na na na

cf_nec_NE90000d23kwz_19931112 NE90000-23kwz hpfet na na na na na na na

cf_nec_NE900100_19911201 NE900100 curtice 750 0.5 1500 19 8 227.21 -4

cf_nec_NE900100_1993069 NE900100 eefet3 750 0.5 1500 19 8 227.21 -4

cf_nec_NE900200_19930730 NE900200 eefet3 1500 0.5 3000 18.9 8 404.17 -3.9

cf_nec_NE900400_19930730 NE900400 eefet3 3000 0.5 7500 19.4 8 822.93 -4.4

na = not available

Table A-25. Okidata Chip FETs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_oki_KGA1450_19930609 KGA1450 eefet3 300 0.25 450 4 2 86.33 -1

cf_oki_KGA1460_19930609 KGA1460 eefet3 200 0.25 300 4.2 2 47.79 -1.2

-17

Table A-26. Plessey Chip FETs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_ply_P351101_19930609 P351101 eefet3 350 4 525 10.5 5 21.26 -1.5

cf_ply_P351105_19930609 P351105 eefet3 300 0.8 450 10 5 50.88 -3.2

cf_ply_P351130_19930609 P351130 eefet3 265 0.5 400 6.7 3 75 -1.7

cf_ply_P351140H_19930609 P351140H eefet3 265 0.35 400 8.9 4 87 -1.9

cf_ply_P351140L_19930609 P351140L eefet3 265 0.35 400 7.3 3 28 -2.3

cf_ply_P351140M_19930609 P351140M eefet3 265 0.35 400 6.4 3 50.24 -1.4

Table A-27. Raytheon Chip FETs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_ray_RPK200303_19911201 RPK200303 curtice na na na na na na na

na = not available

Table A-28. Texas Instruments Chip FETs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_ti_TGF1350_19920212 TGF1350 curtice 300 0.5 500 6.2 3 54.6 -1.2

cf_ti_TGF1350_19920228 TGF1350 hpfet 300 0.5 500 6.2 3 54.6 -1.2

cf_ti_TGF1350_19930609 TGF1350 eefet3 300 0.5 500 6.2 3 54.6 -1.2

-18

Table A-29. Toshiba Chip FETs

Component Name




Glµm

PdissmW

VbrV

VdsV

IdssmA

VtV

cf_tsb_JS8818AAS_19921216 JS8818AAS eefet3 300 0.3 400 6.8 3 67.36 -1.8

cf_tsb_JS8818AS_19911201 JS8818AS curtice 300 0.3 400 6.8 3 67.36 -1.8

cf_tsb_JS8818AS_19921216 JS8818AS eefet3 300 0.3 400 6.8 3 67.36 -1.8

cf_tsb_JS8819AS_19911201 JS8819AS curtice 300 0.5 400 5.9 3 40.48 -0.9



cf_tsb_JS8834AS_19921215 JS8834AS eefet3 400 0.8 1500 15.5 10 179 -3.6



cf_tsb_JS8850AAS_19920213 JS8850AAS curtice 450 0.5 1000 22.7 10 94.66 -3.7


cf_tsb_JS8851AS_19921217 JS8851AS eefet3 800 0.5 2000 17 10 205.49 -4




-19

Index
Cchip BJTs, 1-1chip GaAs Fets, 1-7
HHEMTs, 1-3

Mmicrowave transistors, 1-1

Index-1

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