To learn more about ON Semiconductor, please visit our website at www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com.

Is Now Part of

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

December 2013

Thermal Characteristics

FQU20N06LN-Channel QFET® MOSFET60 V, 17.2 A, 42 mΩ

Description

©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3

www.fairchildsemi.com1

FQU20N

06L — N

-Channel Q

FET® M

OSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features• 17.2 A, 60 V, RDS(on) = 42 mΩ (Max.) @ VGS = 10 V,

ID = 8.6 A

• Low Gate Charge (Typ. 9.5 nC)

• Low Crss (Typ. 35 pF)

• 100% Avalanche Tested

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter FQU20N06LTU Unit

RJC Thermal Resistance, Junction to Case, Max. 3.28oC/W

RJAThermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50

Symbol Parameter FQU20N06LTU UnitVDSS Drain-Source Voltage 60 VID Drain Current - Continuous (TC = 25°C) 17.2 A

- Continuous (TC = 100°C) 10.9 AIDM Drain Current - Pulsed (Note 1) 68.8 AVGSS Gate-Source Voltage ± 20 VEAS Single Pulsed Avalanche Energy (Note 2) 170 mJIAR Avalanche Current (Note 1) 17.2 AEAR Repetitive Avalanche Energy (Note 1) 3.8 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/nsPD Power Dissipation (TA = 25°C) * 2.5 W

Power Dissipation (TC = 25°C) 38 W- Derate above 25°C 0.30 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering, 1/8" from case for 5 seconds.

300 °C

• Low Level Gate Drive Requirements Allowing DirectOperation Form Logic Drivers

GDS I-PAK

G

S

D

Package Marking and Ordering Information

©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3

www.fairchildsemi.com2

FQU20N

06L — N

-Channel Q

FET® M

OSFET

Part Number Top Mark Package Reel Size Tape Width QuantityFQU20N06LFQU20N06LTU IPAK N/A N/A 70 units

Packing MethodTube

Electrical Characteristics TC = 25°C unless otherwise noted.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V∆BVDSS / ∆TJ

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C

IDSS Zero Gate Voltage Drain CurrentVDS = 60 V, VGS = 0 V -- -- 1 µAVDS = 48 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.5 VRDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 8.6 AVGS = 5 V, ID = 8.6 A

----

0.0460.057

0.060.075 Ω

gFS Forward Transconductance VDS = 25 V, ID = 8.6 A -- 11 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 480 630 pFCoss Output Capacitance -- 175 230 pFCrss Reverse Transfer Capacitance -- 35 45 pF

Switching Characteristics td(on) Turn-On Delay Time VDD = 30 V, ID = 10.5 A,

RG = 25 Ω

-- 10 30 nstr Turn-On Rise Time -- 165 340 nstd(off) Turn-Off Delay Time -- 35 80 nstf Turn-Off Fall Time -- 70 150 nsQg Total Gate Charge VDS = 48 V, ID = 21 A,

VGS = 5 V

-- 9.5 13 nCQgs Gate-Source Charge -- 2.5 -- nCQgd Gate-Drain Charge -- 5.5 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 17.2 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 68.8 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 17.2 A -- -- 1.5 Vtrr Reverse Recovery Time VGS = 0 V, IF = 21 A,

dIF / dt = 100 A/µs -- 54 -- ns

Qrr Reverse Recovery Charge -- 75 -- nC

(Note 4)

(Note 4)

Notes:1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 670 µH, IAS = 17.2 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.3. ISD ≤ 21 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.4. Essentially independent of operating tmperature.

©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3

www.fairchildsemi.com3

FQU20N

06L — N

-Channel Q

FET® M

OSFET

Typical Characteristics

40 8 12 16 200

2

4

6

8

10

12

VDS = 30V

VDS = 48V

※ Note : ID = 21AVG

S, G

ate-

Sour

ce V

olta

ge [V

]

QG, Total Gate Charge [nC]10-1 100 1010

500

1000

1500Ciss = Cgs + Cgd (Cds = shorted)

Cgd

dsCoss = C + CgdCrss =

※ Notes :1. VGS = 0 V2. f = 1 MHz

Crss

Coss

Ciss

Capa

citan

ce [p

F]

0.2 0.4 0.6 0.8 1.0 1.2 1.410-1

100

101

150※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test

25I DR, R

ever

se D

rain

Curre

nt [A

]

VSD, Source-Drain voltage [V]

0 01 20 30 40 05 6020

40

60

80

100

VGS = 10V

VGS = 5V

※ Note : TJ = 25

RD

S(O

N) [mΩ

],Dr

ain-

Sour

ce O

n-R

esis

tanc

e

ID, Drain Current [A]

000 2 8 1010-1

100

101

150

25

-55

※ Notes : 1. VDS = 25V 2. 250μ s Pulse Test

I D, D

rain

Curre

nt [A

]

10-1 100 101

100

101

VGSTop : 10.0 V

8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V

Bottom : 3.0 V

※ Notes :1. 250μs Pulse Test2. TC = 25

I D, D

rain

Curre

nt [A

]

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and

Temperature

VGS, Gate-Source Voltage [V]

Figure 2. Transfer Characteristics

VDS, Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

64

©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3

www.fairchildsemi.com4

FQU20N

06L — N

-Channel Q

FET® M

OSFET

Typical Characteristics (Continued)

Z JC

(t), T

herm

al R

espo

nse

[o C/W

]

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 11 0 -2

1 0 -1

1 0 0

※ N o t e s : 1 . Z

θ J C( t ) = 3 .2 8 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M Z* Cθ J ( t )

s i n g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

25 50 75 100 125 1500

5

10

15

20

I D, D

rain

Cur

rent

[A]

TC, Case Temperature []10-1 100 101 102

10-1

100

101

102

103

DC10 ms

1 ms100 µs

Operation in This Area is Limited by R DS(on)

※ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse

I D, D

rain

Cur

rent

[A]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

※ Notes :1. VGS = 10 V2. ID = 8.6 A

RDS

(ON)

, (No

rmali

zed)

Drain

-Sou

rce

On-R

esist

ance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

※ Notes : 1. VGS = 0 V 2. ID = 250 μA

BVDS

S, (N

ormali

zed)

Drain

-Sou

rce B

reakd

own V

oltag

e

TJ, Junction Temperature [oC]

VDS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature

Figure 7. Breakdown Voltage Variationvs. Temperature

Figure 8. On-Resistance Variationvs. Temperature

t 1 , S q u a r e W a v e P u ls e D u r a t i o n [ s e c ]

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21EAS = L IAS

2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

VGSVGS

IG = const.

©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3

www.fairchildsemi.com5

FQU20N

06L — N

-Channel Q

FET® M

OSFET

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------

©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3

www.fairchildsemi.com6

FQU20N

06L — N

-Channel Q

FET® M

OSFET

©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3

www.fairchildsemi.com7

FQU20N

06L — N

-Channel Q

FET® M

OSFET

FQU13N06LTU

Mechanical Dimensions

Figure 16. TO251 (I-PAK), Molded, 3-LeadPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-003

©2009 Fairchild Semiconductor Corporation FQU20N06L Rev. C3

www.fairchildsemi.com8

TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FPS™

F-PFS™FRFET®

Global Power ResourceSM

GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®

TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I66

tm

®

FQU20N

06L — N

-Channel Q

FET® M

OSFET

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATIONN. American Technical Support: 800−282−9855 Toll FreeUSA/Canada

Europe, Middle East and Africa Technical Support:Phone: 421 33 790 2910

Japan Customer Focus CenterPhone: 81−3−5817−1050

www.onsemi.com

LITERATURE FULFILLMENT:Literature Distribution Center for ON Semiconductor19521 E. 32nd Pkwy, Aurora, Colorado 80011 USAPhone: 303−675−2175 or 800−344−3860 Toll Free USA/CanadaFax: 303−675−2176 or 800−344−3867 Toll Free USA/CanadaEmail: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your localSales Representative

© Semiconductor Components Industries, LLC