Using Heatable AFM Probes for the Nanolithography of ......IBM’s Millipede Large arrays of probes...
Transcript of Using Heatable AFM Probes for the Nanolithography of ......IBM’s Millipede Large arrays of probes...
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Using Heatable AFM Probes for the Nanolithography of Polymers, Nanoparticles, and Graphene
Paul Sheehan
U.S. Naval Research Laboratory
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SEM: Heatable Cantilever
Heating is controlled by passing a current through the cantilever
Heatable Cantilevers [King Group, UIUC]
Infrared Microscopy
Tmax: 1200 °C
Diamond Coating @ ADT
Rcurv: ~ 20 nm
Fletcher et al., ACS Nano (2010) 4:3338
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Nanoscale Modification with Heatable Probes
Direct Deposition
Indirect Deposition
Heatable probes can deposit material directly, deposit material indirectly by mixing with a carrier polymer, or can chemically convert existing films through heating.
Graphene Lithography
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Direct Deposition = thermal DPN
25 °C
57 °C 98 °C
122 °C
OPA Indium
Materials Deposited to date Small Molecules OPA—functionalize ITO, glass electrodes [APL (2004) 85: 1589] Anthracene—conducting molecule 1,2,4,5-tetrakis(phenylethynyl)benzene—Carbon Nanotube Precursor
Metal Indium—used the tip as a nanoscale “soldering iron” [APL (2006) 88: 033104]
Polymers Conductive—PDDT [JAP (2010) 107: 103723], MEH-PPV Insulators—Mylar, polyethylene, PMMA, PEI Piezoelectric—PVDF, PVDF-TrFE Electroluminescent—PFO Temperature Responsive—pNIPAAM [Soft Matter (2008) 4:1844]
Many different materials may be deposited using the tip as a nanoscale soldering iron. Polymers work particularly well and are ordered during deposition.
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Robust deposition
Total Writing time = 286 s 1.5 s for long lines 0.5 s for short line We can write > 3 mm without reloading tip. Over 5000 structures written with a single tip.
120 lines of the conductive polymer PDDT Deviation within
column < ~5%
Deposition modulated using a second control system
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1 m
PDDT on SiO2 written in
•UHV (1 x 10-10 Torr)
•Height = ~ 20 nm (8 MLs)
•Linewidth = ~ 150 nm (fwhm)
1.0
0.5
0.0
10.05.00.0
1 ML
4 MLs
20 m/s
8 m/s
0 2.6 m
Adjusting the probe speed enables PDDT to be written layer by layer.
In-situ Polymer Nanofabrication in UHV
<height> (nm)
Because the technique uses heat alone, it is vacuum compatible.
submitted, Beilstein J. of Nanotech.
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Control over Orientation
•Rastering the tip over an area combs the polymer creating even greater order.
•Each bundle of polymer strands is 73±4 nm wide (~190 stands) which is comparable to the tip’s radius of curvature.
tip direction
A single pass with a very dull tip
Rastering a rectangle with a sharp tip
17 nm
0 1 2 3
<height> (nm)
2 µ
m
Substrate
2.6
nm
Lee et al., JACS (2006) 128: 6774
Shearing the polymer between the tip and the substrate aligns polymer along the tip path.
Laracuente et al., J. Appl. Phys. (2010) 107: 103723
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New Properties—Temperature Responsive Polymers
Ahn et al, Adv. Mater. (2004), 16, 23-24, 2141
• Poly(N-isopropylacrylamide), or PNIPAAm, is a stimulus-responsive polymer that shifts from hydrophilic to hydrophobic when its temperature is increased above 32 °C
• PNIPAAm brushes can nonspecifically bind biomolecules, proteins, and bacteria when collapsed (T > 32 °C) and release them when rehydrated state (T < 32 °C).
• The large dimensional changes hinder accurately positioning an adsorbed molecule
10 nm
Can we retain the surface free energy shift while
maintaining dimensional stability?
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New Property of deposited pNIPAAM
Lee et al., Soft Matter, 4, 1844 (2008)
The surface aligned pNIPAAM deposited via tDPN can shift its surface energy while maintaining its dimensions.
0 10µm
0
20nm
height: 2.37±0.1 nm
0
20nm
0 10µm
height: 2.47±0.1 nm
40°C
H2O
2
3°C
H2O
Same Height
Adhesion Forces
Typical force-distance curve
23°C
40°C
Adhesion force
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Protein Binding on deposited pNIPAAM
0
3
6
0
3
6
0
3
6
C B
A
µm5.5
y-a
vera
ge
heig
ht
(nm
)
A
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Avera
ge H
eig
ht
(nm
)
// Init
ial
Rin
se
Rin
se
Ne
utr
avid
in
BSA
Co
ntr
ol
23°C
40°C
23°C 23°C
40°C
23°C
Lee et al., Soft Matter, 4, 1844 (2008)
pNIPAAM deposited via tDPN can reversibly capture and release proteins while maintaining its dimensions.
Fluorescence of FITC-labeled neutravidin bound to micrometer scale pNIPAAM patterns
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Indirect Deposition
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Current Limitations nP alignment—it’s rare that they are well-aligned Heterogeneity—hard to deposit different materials side by side Compatibility—solution processing vs. UHV Registration—often difficult to align with external features Flexibility—techniques are often wed to a single chemistry which limits the choice of substrate, nP, and polymer
The State of the Art for Nanoparticle Deposition
Self Assembly anisotropic labeling, charge
DeVries et al., Science (2007) 315: 358
50 nm
200 nm
Warner et al., Nature Mat. (2003) 2: 272
Soft Templates DNA, viruses, diblock polymers, etc
Hard Templates pits, tubes, etc.
Bai et al., J. Mat.Chem (2009) 19: 921
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Indirect Deposition—Polymer Nanocomposites
O 2 plasma
Nanocomposite flows from heated tip
to surface
use as-is
Nanoparticle Assembly Nanocomposite Lee et al., Nano Letters (2010) 1: 129
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1 µm
Nanocomposites
140 nm
polyethylene + quantum dots
Fluorescence
P(VDF-TrFE) + Alq3
2 µm
40
nm
Topography
Fluorescence
w/ nP w/o nP
MFM
PMMA + Fe3O4 nPs
w/ nP w/o nP
Many different polymers, nanoparticles, and substrates were used.
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Nanoparticle Assemblies
Generally, the particles disperse through the polymer matrix…
1 µm
SEM
Au nPs
O2 Plasma
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10 nm
Aligned nanoparticle assemblies
O2 plasma
SEM
250 nm
250 nm
200 nm
aligned Fe3O4
nanoparticles
SEM
Particles aligned during deposition
By controlling the solubility of the nanoparticle in the polymer, it is possible to have the polymer align the nanoparticles into chains. The particle may be functionalized to remove the effect.
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Direct-Write Graphene Nanoribbon Circuitry
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Graphene Nanoribbon Circuitry
Unlike graphene, graphene nanoribbons (GNRs) have band gaps which are needed for low-power switchable components. The electronic and magnetic properties of GNRs may be controlled by chemically modifying their surfaces and edges. These GNRs can serve as active and passive components in graphene circuitry. High thermal conductivity enables high densities of devices
Areshkin et al., Nano Lett (2007) 7:3253
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The State of the Art in Graphene Nanoribbons
Shatter graphene using ultrasound
Dai group @ Stanford ion/ioff ~ 100,000 no ability to place or shape ribbon, broad width distribution, low yield
E-beam lithography
Kim group @ Columbia, Avouris @ IBM
ion/ioff ~ 2,500 @ low T
line edge roughness: 3-5 nm; fails @ 20 nm
Several approaches to obtain Graphene Nanoribbons (GNRs)
Slice open carbon nanotube
Tour group @ Rice (also Dai group)
ion/ioff : 100-1,000 no placement, rough edges, oxidation
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Geometric versus Chemical Isolation
Lee et al. Nano Lett. (2011) 11: 5461
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Fluorination with XeF2 [Robinson@NRL]
*Robinson et al. Nano Lett. (2010) 10: 3001
Fluorination with XeF2 generates two stoichiometric graphene fluorides (CF, C4F)
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Chemical Isolation advantages—mobility
The edge terminates at sp3 carbons covalently bound to fluorine rather than at a collection of sp2 and sp3 hybridized carbons bound to a variety of oxygen rich functional groups as would be left by oxygen plasma etching.
-40 -30 -20 -10 0 10 20 30 400
1
2
Dirac Point Voltage
Rsheet (k
)
Vg
3. hydrazine
reduced
1. initial
2. GNR
0
5
10
15
cou
nts
Produces ribbon edges that are robust and chemically well-defined The carrier mobility in the final device is 95±14% that of the starting material
Lee et al. Nano Lett. (2011) 11: 5461
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Chemical Isolation advantages—reversible
-40 -30 -20 -10 0 10 20 30 400
1
2
3
4
5
reduced
Rsheet (k
)
Vg
3. hydra
zine
1. initial
2. GNR
Because the carbon skeleton is left in place, one can expose the film to hydrazine, reducing all the material back to graphene and enabling one to start over. The resistance goes from open circuit (>~100,000x) back to a 3x higher than the original
Once can reverse the fluorination for rewriteable electronics
Lee et al. Nano Lett. (2011) 11: 5461
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-50 -40 -30 -20 -10 0 10 20 30 40 500.0
0.5
1.0
1.5
2.0
2.50.0
0.5
1.0
1.5
2.0
2.5
Rsh
eet (
k)
Vg
Geometric Isolation
Rsh
eet (
k)
Chemical Isolation
Chemical Isolation advantages
The intact graphene sheet prevents adsorbates from intercalating under the GNR and modifying its electronic performance
After 30 min
After 2 weeks
Device Response after Vacuum Anneal
Lee et al. Nano Lett. (2011) 11: 5461
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Thermal Reduction
Heat from the scanning probe pyrolyzes the GO reducing it back towards graphene
Wei et al., Science (2010) 328: 1373
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Variable Reduction
Hotter tips reduce the GO more as shown by friction images. Conductivity may be varied by 10,000x.
Wei et al., Science (2010) 328:1373
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Large Films—Epitaxial Graphene on SiC @GA Tech
Epitaxial graphene may be oxidized globally and reduced locally
che
mical
oxid
ation
SiC
graphene
SiC
graphene oxide
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Generic approach: TCNL on fluorographene
Reduction by heated probe could be performed in N2 environment. After reduction, the height
of 300-nm wide reduced line was ~0.7 nm lower and produced lower friction than the
surrounding fluorographene. These results are comparable to the performance of graphene
oxide. Resistance = 2.0 MΩ
0 200 400 600 800 1000
0
1
2
3
4
5
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7
8
he
igh
t (Å
)
X (nm)
-1.5E-08
-1.0E-08
-5.0E-09
0.0E+00
5.0E-09
1.0E-08
1.5E-08
-0.010 -0.005 0.000 0.005 0.010
Vg= -40V
Vg= +40V
0
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VSD
I SD
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To Do—the nanoscale breadboard
IBM’s Millipede
Large arrays of probes already exist and enable parallel writing for wafer scale patterning
We are beginning the task of integrating this different materials into a nanoscale breadboard where multiple materials such as polymer, nanoparticles, and graphene nanoribbons can be integrated into working devices.
www.zurich.ibm.com
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Collaborators and Funding
Heatable Cantilevers @ UIUC
Prof. William King
Zhenting Dai
Patrick Fletcher
Johnny Felts
Graphene growth and Processing
E. Riedo (GA Tech)
Jeremy Robinson
Rory Stine (Nova Research)
Scott Walton
Mira Baraket
Funding Office of Naval Research DARPA
30
DARPA
tDPN Minchul Yang (NRL USPTO) Woo Kyung Lee GNR Writing Zhongqing Wei (NRLCAS) Debin Wang (GA TechLLNL) Woo Kyung Lee Michael Haydell (USNA a ship somewhere in the Pacific Ocean)
Theory Daniel Gunlycke Tom Reinecke
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• extra slides
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Focusing Mechanism
Precipitation on Tip Shearing the nPs results in an entropic penalty for solubilizing the nPs. The nPs fall out of solution and condense onto the tip
Pure polymer aligned by tip
Hydrodynamic focusing The fastest region is the center which will entrain the nPs
17 nm
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Width Control
•Nanoparticles condense onto the tip during deposition
•Nanoparticles cluster when the tip is still but align when the tip moves
•Miscibility affects alignment
6 nm high
100 nm
138 nm high
nPs cluster when tip
stalls for 2 s
AFM
150 100
50 0
5 µm
8 4 0
5 µm
O2 plasma
30 min
etch
PMMA + Au nanoparticles
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What is Graphite Oxide?
• Single-layer GO sheets can be prepared chemically by oxidizing pristine graphite via the Hummers method, the Brodie method, or the Staudenmeier method.
• The graphite oxide is soluble in water and a stable aqueous dispersion of GO can be readily prepared via mild sonication.
The color of synthesized GO solid is much lighter due to the loss of electronic conjugation brought about by the oxidation.
H2SO4 NaNO3
KMnO4 dry
sonicate in H2O GO solid
Stankovich et al., J. Mat. Chem. 16 (2006) 155
WS Hummers and RE Offeman, JACS 80 (1958) 1339
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on a SAM
on Mica
Single-layered GO Sheets on Various Surfaces
Single-layer GO sheets can be dispersed on commonly used substrates such as mica, silicon, HOPG, and self-assembled monolayers (SAMs)
GO/mica (Height)
4 n
m
400 nm
2
1
0
-60
3
0 m
V
400 nm
3 n
m
200 nm
1
0
-7
10
mV
200 nm
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after writing a diamond before writing
Writing Areas
Rastering the tip allows areas to be filled in.
600 nm
0 1 2 3
-0.2
0.0
0.2
0.4
0.6
0.8
He
igh
t (n
m)
Distance (µm)
Counts
0.4
1±
0.1
6 n
m
The measured height change was 0.41±0.16 nm.
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Large Area Films—Epitaxial Graphene on SiC
All carbon electronics will require large area films Epitaxial graphene is produced by Si desorption at high temperature in vacuum -Si is more volatile than C Very different surface morphology for C vs. Si face
400nm
SiC after H2 @ 1600°C
6.67
0.00
Si face
C face
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Four Probe Electronic Measurements
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Line Measurements
Graphene nanoribbons have been tested.
No GNR
With GNR
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On to graphene monolayers…
Extend process to large area monolayers of graphene*
Cu
PMMA
Si Si
Low E Plasma**
*Li et al. Science (2009) 324: 1312
graphene
friction topography
1 µm
~65 nm wide
**Baraket et al., APL (2010) 96: 231501
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SEM topography
Thermal Patterning of perfluorographane
3.0µmNot the same pattern, but the same patterning conditions:
~500 °C and 15 scans @ 7µm/s
2 µm
*Robinson et al. Nano Lett. (2010) 10: 3001
-7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7-50-40-30-20-10
01020304050
curr
ent
(nA
)
V
Fluorination with XeF2 generates two stoichiometric graphene fluorides (CF, C4F)
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Perfluorographane
Fluorination is a robust and flexible route to further chemical functionalization of graphene
Bannerjee et al. Adv. Mater. (2005) 17: 17
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Layer-by-Layer Height Control
The hot polymer anneals during deposition. This allows us to deposit PDDT layer-by-layer
The 2.6 nm height agrees with XRD of a PDDT SAM film (Prosa, Macromolecules ’92)
Substrate
2.6
nm
Yang et al. JACS (2006) 128: 6774
0 1 2 3 4 5 6 0
5
10
15
20
Hei
ght
(nm
)
distance (µm)
500 nm 500 nm 500 nm 500 nm
µm s
0.1 0.5 1 5 10 50 0.1 vtip
Tip
Path
PDDT monolayer
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Depositing Nanoparticles
Particle / Macromolecule
Size
(nm)
Carrier
Polymer Substrate Wtotal/
WnP
Aluminum Triquinone ~0.9 P(VDF-TrFE) SiO2 1x
zinc diethyldithiocarbamate ~1.2 P(VDF-TrFE) SiO2 1x
CdSe-ZnS core-shell 2-4 PE SiO2 1x
Dodecanethiol functionalized silver 2-4 PMMA SiO2 n/m
Dodecanethiol functionalized gold 2-4 PDDT
PMMA
SiO2,
SAM
~2x
1.9x
HMDS-functionalized iron oxide ~6 PMMA SiO2 2.3x
iron oxide 6.5±3.0 PMMA SiO2
Au, mica
36x
We have deposited metal, semiconductor, magnetic, and optical nanoparticles.
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Polystyrene/GNRs
The sheet resistance of the hybrid GNRs does increase below ~70 nm. Whether this
is due to the opening of a bandgap or other effects is currently being determined.
Smallest linewidths are currently 33 nm fwhm.
0 50 100 150 200 250 300 350 400 450 500 550 0
500
1000
1500
2000
She
et R
esis
tance (
/square
)
GNR width (nm)
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Writing Lines
We first started writing onto flakes that had been cast onto silicon oxide.
The topographical width of the line is ~25 nm but could be narrower with sharper tips.
closer view of the X average profile of trench
200nm
aver
aged
x (nm)
he
igh
t (Å
)
0 40 80 120 160
0
0.5
1
1.5
2
2.5 25 nm
Wei et al., Science (2010) 328:1373
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after writing a diamond before writing
Writing Areas
Rastering the tip allows areas to be filled in.
600 nm
0 1 2 3
-0.2
0.0
0.2
0.4
0.6
0.8
He
igh
t (n
m)
Distance (µm)
Counts
0.4
1±
0.1
6 n
m
The measured height change was 0.41±0.16 nm.
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Large Films—epiGraphene ►Riedo@GaTech
Epitaxial graphene may be oxidized globally and reduced locally
che
mical
oxid
ation
SiC
graphene
SiC
graphene oxide
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Four Probe Electronic Measurements
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Polystyrene deposition
-40 -30 -20 -10 0 10 20 30 40 50 600.0
0.5
1.0
1.5
2.0
2.5
PS spincoat
base deviceRsh
eet (
k)
Vg
Polystyrene was chosen because of •easy melt processability •hydrophobicity •resistivity (10-16 S/m ) •it does not dope graphene as shown by an absence of a shift in the VD when it is spin coated onto the base device
Heated Tip
Deposited Polymer
polystyrene The PS line width was controlled from 60 to 300 nm by controlling writing speed with the narrowest lines being achieved at write speeds of 40 µm/s. Lines of polystyrene were written at ~250°C just above its melting point with diamond-coated heated probes.
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Fluorination with XeF2
*Robinson et al. Nano Lett. (2010) 10: 3001
Fluorination with XeF2 generates two stoichiometric graphene fluorides (CF, C4F)