Under the Hood of Flyback SMPS Designs PPT Presentation

42
Power Supply Design Seminar Power Seminar topics and online power- training modules are available at: power.ti.com/seminars Topic 1 Presentation: Under the Hood of Flyback SMPS Designs Reproduced from 2010 Texas Instruments Power Supply Design Seminar SEM1900, Topic 1 TI Literature Number: SLUP254 © 2010, 2011 Texas Instruments Incorporated

Transcript of Under the Hood of Flyback SMPS Designs PPT Presentation

Page 1: Under the Hood of Flyback SMPS Designs PPT Presentation

Power Supply Design Seminar

Power Seminar topics and online power-training modules are available at:

power.ti.com/seminars

Topic 1 Presentation:

Under the Hood of Flyback SMPS Designs

Reproduced from2010 Texas Instruments Power Supply Design Seminar

SEM1900, Topic 1TI Literature Number: SLUP254

© 2010, 2011 Texas Instruments Incorporated

Page 2: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Topic 1

Under the Hood of Flyback SMPS DesignsFlyback SMPS Designs

Jean Picard

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Agenda

1. Basics of Flyback Topology

2 Impact of Transformer Design on Power Supply2. Impact of Transformer Design on Power Supply Performance

3. Power Supply Current Limiting

4. Summary4. Summary

Texas Instruments—2010 Power Supply Design Seminar 1-2

Page 4: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Transfer of Energy• FET turns ON

– Voltage across primary magnetizing inductance ≅ Vi

E i t d i fl b k

IP• Energy is stored in flyback

transformer: Function of L, D and Ts

– Secondary diode in blocking state +Vi

Io

y g

• FET turns OFF– During commutation: Leakage

energy absorbed by clamp circuit

1:n2

+Vi

Vo

amp

Iout

-+-

IPenergy absorbed by clamp circuit– Stored energy transferred to output

through diode– If DCM operation all the stored

Cla

Vdrain

Iout+P

If DCM operation, all the stored energy is transferred

• Pulsating input and output t

Texas Instruments—2010 Power Supply Design Seminar 1-3

current

Page 5: Under the Hood of Flyback SMPS Designs PPT Presentation

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Transfer of Energy• FET turns ON

– Voltage across primary magnetizing inductance ≅ Vi

Energy is stored in flybackIP

• Energy is stored in flyback transformer: Function of L, D and Ts

– Secondary diode in blocking state

V

Io

• FET turns OFF– During commutation: Leakage

energy absorbed by clamp circuit

1:n2

+Vi

Vo

mp

I+I

Io

circuit – Stored energy transferred to

output through diode– If DCM operation all the stored

Cla

m

Vdrain

Iout-IP

If DCM operation, all the stored energy is transferred

• Pulsating input and output t

Texas Instruments—2010 Power Supply Design Seminar 1-4

current

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Transfer of EnergyO• FET turns ON

– Voltage across primary magnetizing inductance ≅ Vi

Energy is stored in flybackIP

• Energy is stored in flyback transformer: Function of L, D and Ts

– Secondary diode in blocking state

O +V

Io

• FET turns OFF– During commutation: Leakage

energy absorbed by clamp circuitSt d t f d t

1:n2

+Vi

Vo

mp

I+

Io

– Stored energy transferred to output through diode

– If DCM operation, all the stored energy is transferred

Cla

Vdrain

Iout-

energy is transferred

• Pulsating input and output current

Texas Instruments—2010 Power Supply Design Seminar 1-5

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SLUP254

Transfer of Energy• FET turns ON

– Voltage across primary magnetizing inductance ≅ Vi

• Energy is stored in flyback transformer: Function of L, D and Ts

– Secondary diode in blocking state 1:n2

+Vi

Vo

• FET turns OFF– During commutation: Leakage energy

absorbed by clamp circuit

Cla

mp

Vdrain

Iout

– Stored energy transferred to output through diode

– If DCM operation, all the stored energ is transferred

drain

energy is transferred

• Pulsating input and output current

Texas Instruments—2010 Power Supply Design Seminar 1-6

Page 8: Under the Hood of Flyback SMPS Designs PPT Presentation

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CCM versus DCM• Continuous conduction mode (CCM)

T

VContinuous conduction mode (CCM)– Small ripple and rms current– Lower MOSFET conduction and

turn-off loss

PrimaryMOSFET

IPrimaryC

Vdrain

D x Ts(1 – D) x TsVo + Vin2

– Lower core loss– Lower capacitors loss– Can have better “full load” efficiency

S ll EMI d t t filt

IpkIpkminCurrent

m2SSecondaryCurrent

IIo_avg

IP ΔIL

ΔILS– Smaller EMI and output filters

• Discontinuous conduction mode (DCM)

Time (t)

Io_ gS

Vdrain

Ts

V– No diode reverse recovery loss– Lower inductance value

• May result in a smaller transformerBetter “no load” efficiency

drainD × Ts

Vi

Ipk

(1 D) × T

PrimaryMOSFET

PrimaryCurrent

Vo + Vin2

– Better no load efficiency– First-order system

• Inherently stable– No RHPZ problem

IP(1 – D) × TsCurrent

Secondary

IdlePeriod

Texas Instruments—2010 Power Supply Design Seminar 1-7

p– Slope compensation not needed

in CMCTime (t)

Io_avgIo

SecondaryCurrent

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+Vi

Right-Half-Plane Zero, CCM Operation

1:n2

+Vi

Vo

lam

p

Iout-

+-IP

• Energy is delivered during 1 – D– Effect of control action during ON

time is delayed until next switch

Cl

Vdrain

out+y

turn OFF

• Initial reaction is in opposite direction of desired correction

1+Vi Io

direction of desired correction

⇒ RHP Zero

Phase decreases with increasing

FET ON

1:n2 Vo

Clam

p

Iout+-

o– Phase decreases with increasing gain

( )2 o1 D V− ×Vdrain

( ) oRPHZ 2

out 2

1 D Vf

2 L D I n×

=π × × ×

FET OFFD M i it h d t l

Texas Instruments—2010 Power Supply Design Seminar 1-8

D ↔ Main switch duty-cycle

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RCD Clamp Circuit• During commutation primary to• During commutation primary-to-

secondary, the leakage energy is absorbed by the clamp circuit

R dissipates the leakage

+Vi

Diode orSynchronous

Rectifier VoN1:N2– Rclamp dissipates the leakage energy and some magnetizing energy

– The clamp capacitor ensures a

Rclamp Vclamp+

–Vo

IP

N1:N2

The clamp capacitor ensures a low voltage ripple

– Use short connection with minimum loop area

Vdrain

RS

• Vclamp is maximum at full load and minimum input voltage– Rclamp selected for a maximum

S

V V

Clamp-DiodeForward Recovery Leakage-Inductance

DemagnetizationVclamp

drain voltage in worst case– Tradeoff between efficiency,

peak drain voltage, output

VdrainPrimaryMOSFET

V + Vi clamp V +V n

oi

Texas Instruments—2010 Power Supply Design Seminar 1-9

current limit and cross regulation (see ringing effect)

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Agenda

1. Basics of Flyback Topology

2 Impact of Transformer Design on Power2. Impact of Transformer Design on Power Supply Performance

3. Power Supply Current Limiting

4. Summary4. Summary

Texas Instruments—2010 Power Supply Design Seminar 1-10

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Transformer’s Leakage Inductance• Transformer’s leakage

Lleak2N1:N2IS

During Primary-to-Secondary Commutation• Transformer s leakage

inductance represented by Lleak2– Primary winding is the closest to

center gap

Clamp+

øVi

IP

+

+–+

+–

–Vmag1 Vmag2Lm

VDVleak2

FET

Vout

+

–W1

W2

Secondary Commutation

• When FET turns OFF– Lleak2 opposes to IP decrease and

IS increase

W2

Clamp DiodeForward Recovery

LeakageInductance

Demagnetization

Current Circulates inSecondary Winding(s) Vi + Vclamp

Leakage InductanceResonates with Drain

Capacitance

– Magnetizing inductance works to maintain magnetizing current

• Voltage spike on FET during

Vi + Vclamp

VclampVFET

Cl C it V lt

y g( )

VFET ClampCapacitor

commutation

• Rate of rise of current is influenced by leakage inductance

0 V

Vmag2 – VD – Vout

Vmag2

Vleak2

Clamp Capacitor Voltage Voltage

Reduction in Magnetizing CurrentDue to Faster Commutationy g

• Commutation primary-to-secondary is not instantaneous and depends on Vclamp

IP

IS

IP

IS

Due to Faster Commutation

Texas Instruments—2010 Power Supply Design Seminar 1-11

p clamp– Loss of volt-seconds Lost Volt-Seconds

Low Clamp Voltage High Clamp Voltage

Dtr Dtr

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Effects of Leakage Inductance

• Clamp circuits and snubbers needed for primary FET and secondary rectifier(s)

• Lower power-supply efficiency

• Impact on gate-drive strategy if synchronous rectifier is p g gy yused

• Higher duty cycle and magnetizing current than expectedg y y g g p

• Higher H-field radiated emission

Hi h i t l ti• High impact on cross-regulation

Texas Instruments—2010 Power Supply Design Seminar 1-12

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How Leakage Can Be Minimized• Leakage inductance is a function of winding geometry number of turns• Leakage inductance is a function of winding geometry, number of turns

and separation between primary and secondary– Minimize the separation between the primary and main secondary

winding(s)winding(s) – Interleave the primary and main secondary– Select a core with a long and narrow window

L L

W2 W1W1 W2W2 W2W1 W1

W1 W1W2 W2W1 W2W2 W1

• Leakage inductance is not lowered with a high permeability coreOption 1 Option 2

Texas Instruments—2010 Power Supply Design Seminar 1-13

• Having the winding tightly coupled to the core will not reduce it

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Cross-Regulation – Overview

• Multiple-output flyback topology is popular because of its simplicity and low cost

• If the coupling is perfect, the turns ratio directly defines output voltages

• In the real world, “perfect” coupling is not possible

• This often results in poor cross-regulation

Texas Instruments—2010 Power Supply Design Seminar 1-14

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SLUP254

Cross-Regulation Physical Model

• Transformer windings cannot all be equally well coupled to the gap because of physical separation between them

• Magnetic energy stored between the windings represented as leakage inductances

• Model not applicable to any transformer geometry

C b l if i t l i i d if lti l• Can become complex if interleaving is used, or if multiple secondary windings are wound simultaneously (multifilar)

• Not accurate in situation of lightly loaded secondary outputs

• Good tool to understand how the common flyback

Texas Instruments—2010 Power Supply Design Seminar 1-15

transformer geometries work

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Cross-Regulation Physical ModellW4

+

+–

+–

lp

lW3

W1

mar

y

W2

W3

W4

N4 V4

N3 V3

++

+–

V2

Basic Flyback Circuit Transformer Construction

Clamp

Vi

FET

N1:N2

lW2

WPr

i W W W

+

lp Lleak12 Lleak23 Lleak34

+

Basic Flyback Circuit Transformer Construction

LmVmag1Vi

ClampN2:N3 N2:N4

I2I3

IW3IW4

I4i

V2FET

N1:N2

+

+

+

3

V3 V4

• This circuit is only applicable to the transformer windings stackup shown

Each leakage inductance considered is between two consecutive secondaries

Transformer Physical Model

Texas Instruments—2010 Power Supply Design Seminar 1-16

• Each leakage inductance considered is between two consecutive secondaries

• Also called “Ladder model”

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Flux Lines during CommutationEach Secondary Winding with Nominal Load

• φm decreases during commutation

• dφ/dt (decreasing) in each secondary winding is limited by its output voltage

φm

d g s ted by ts output o tage– Increasing current

induced in W2 to W4 to maintain φm in the gap

mde Ndtφ= − ×

W1 W3 W4

W2

L

m

• Leakage between W2 and W1– W1’s voltage limited by clamp

• W1 closest to gapDuring Primary-to-Secondary Commutation

Current in All Windings• W1 closest to gap– Vclamp limits dφm/dt in the gap during

commutation

• W2 is next to W1 I

I2lp

W2 is next to W1– W2 limits the dφ/dt seen by W3 and W4– W3 and W4 output voltage lower than

without leakage

I4

I3

Secondary Currents DuringC t ti B d Ph i l M d l

Texas Instruments—2010 Power Supply Design Seminar 1-17

• Current commutates progressively from near to remote secondary windings

Commutation Based on Physical Model

Page 19: Under the Hood of Flyback SMPS Designs PPT Presentation

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Ringing EffectHi h dV/dt h i it h t ff if i t t i h il l d d• High dV/dt when main switch turns off if main output is heavily loaded

• Transformer leakage inductance and parasitic capacity ⇒ auxiliary secondary voltage tends to “ring” y g g

• If auxiliary output fully loaded ⇒ this ringing is clamped

• If lightly loaded ⇒ voltage overshoot with peak detector effectIf lightly loaded ⇒ voltage overshoot with peak detector effect

• Much higher (sometimes > 2 x nominal value!) auxiliary output voltage at light load – Primary clamp voltage has high impact on result

• Most existing transformer models fail to predict this

• This effect can be mitigated (but not eliminated)– Minimize leakage inductance between secondary windings– Locate the highest power secondary(ies) closest to the primary

Texas Instruments—2010 Power Supply Design Seminar 1-18

• Other solutions include a post-regulator, series resistor or minimum load

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Cross-Regulation ExampleAuxiliary Output Lightly Loaded

• W2 (high current output) heavily loaded, W4 lightly loaded

– W4’s output received too much energy during

IW4

I4_pk

I3_pkIW3gy gPhase 1 due to ringing

– W2’s output did not receive enough energy

• At end of commutation (Phase 1):

Effect of V3Capacitors ESR

I2_pkIW2

V3

( )– Σ{reflected secondary currents} magnetizing

current

• V4 went too high IP_pkIP

Vmag1

g– Phase 2: high dφ/dt (decreasing) in W4

• IW4 ⇒ 0 A rapidly– IW2 increases to maintain φm in the gap

Time (t)Phase1

Phase2

Phase3

IP

φm

• After IW4 crosses 0 A, W2’s and W3’s di/dtchange to maintain the downslope of the magnetizing current and flux

φ

W1 W3 W4

W2

Texas Instruments—2010 Power Supply Design Seminar 1-19

mH N IAφ×δ = ×δ = ××μ ∑

Phase 2: No Primary Current

Page 21: Under the Hood of Flyback SMPS Designs PPT Presentation

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Test Results10 R

Ω I W6

Current ProbeV6VDD

V I 100 1Current Transformer

6.8 µFW6(9T)

W3(9T)

RW3W6

I

CurrentProbe

V4

DD

R6VAW3

W3

W1A

W1B W2

W4

W6

V_Iprim 100:1

+Vi

6.8 µFW4(14T)

I W4 V4

R436 Ω

300 Ω

5 V

W2(4T)W1

(21T)

I W2I PMURS120

0.1 µFR15 k

clampΩ Vclamp

V_Isec1:100Current Transformer

6.8 Ω249 Ω

• Input voltage: 48 V

5 V t t l d 0 A t 5 A

To 5-V Filterand Load

Primary MOSFET

SyncRectifier

To CS InputI5 V

• 5-V output load: 0 A to 5 A

• Auxiliary outputs: V6 (10 V at 0 to 140 mA) and

Rectifier

• Switching frequency: 250 kHz

• Primary magnetizing

Texas Instruments—2010 Power Supply Design Seminar 1-20

( )V4 (18 V at 0 to 200 mA)

Primary magnetizing inductance: 70 µH

Page 22: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Cross-Regulation Test Results with Main Output Fully Loadedp y

2

IW6(0.5 A/div)

2

IW6 (0.5 A/div)

4

2

IW4 (1 A/div)4

2

IW4 (1 A/div)

IW2(2.94 A/div)

IW2(2.94 A/div)

V6 at 1 6 W V4 at 2 5 W

1

Time (0.5 µs/div)

1

Time (0.5 µs/div)

V6 at 0 5 W V4 at 3 6 WV6 at 1.6 W, V4 at 2.5 W, I5 V = 5 A

• The two auxiliary outputs operate in DCM

V6 at 0.5 W, V4 at 3.6 W, I5 V = 5 A

Texas Instruments—2010 Power Supply Design Seminar 1-21

• Notice the change of slope of IW2 when IW4 or IW6 crosses 0 A

Page 23: Under the Hood of Flyback SMPS Designs PPT Presentation

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Cross-Regulation Test Results: Lightly Loaded Auxiliary with Main Output Fully Loadedy p y

12.4 VV6 (10 V/div)I5 V = 5 A,

V4 at 0.3 W,Vclamp = 70 V

20.6 VI5 V = 5 A,V4 at 0.3 W,Vclamp = 70 V

V6 (10 V/div)

VW6

clamp p

VW6(10 V/di )(10 V/div) (10 V/div)

Time (1 µs/div)Time (1 µs/div)

IW6(200 mA/div)

• At minimum load V6 (10 V nominal) goes up to 20 6 V

V6 at 0.5 W V6 at < 5 mW

( µ )( µ )

Texas Instruments—2010 Power Supply Design Seminar 1-22

• At minimum load, V6 (10 V nominal) goes up to 20.6 V

Page 24: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Cross-Regulation Test Results with Main Output Fully Loaded : Impact of Clamp Voltage

26 V14.4 VV6 (10 V/div)I5 V = 5 A,

V4 at 0.3 W,Vclamp = 83 V

V6 (10 V/div)I5 V = 5 A,V4 at 0.3 W,

V l = 83 V

VW6(10 V/di )

VW6(10 V/div)

Vclamp = 83 V

(10 V/div)

IW6

(10 V/div)

Time (1 µs/div)Time (1 µs/div)

IW6(200 mA/div)

• RCD resistor has been increased for higher Vclamp: 70 V ⇒ 83 V

V6 at 0.5 W V6 at < 5 mW

Texas Instruments—2010 Power Supply Design Seminar 1-23

⇒V6 increased significantly in both cases

Page 25: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Overload Test at Auxiliary Output: Impact of Leakagep g

• There was no hiccup I5 V = 0 A,There was no hiccup mode even at more than 3 A!

Th l d d i di

4

3

IW4 (1 A/div)5 VV4 at 2.5 W,R6 = 1 Ω

• The overloaded winding is unable to take all the energy because of leakage W3 having in

3VAW3 (20 V/div)

IW6 (2 A/div) 6.2-A Peakleakage, W3 having in fact a better coupling to primary than W6

Enough energy

2

IW6 (2 A/div)

– Enough energy delivered by W3 to VDDto maintain switching

Time (0.5 µs/div)

Texas Instruments—2010 Power Supply Design Seminar 1-24

Page 26: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Benefits of Good Cross-Regulation

• Good control of auxiliary outputs in spite of load variations

Better control of gate drive voltage amplitude less gate• Better control of gate drive voltage amplitude, less gate drive losses

• Lower rms current in output capacitors, lower dissipation

• May allow the controller to reach hiccup mode more easilyMay allow the controller to reach hiccup mode more easily when the main output is short-circuited for better protection– Not necessarily true if the short-circuit is applied to an auxiliary

output!

Texas Instruments—2010 Power Supply Design Seminar 1-25

Page 27: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

How Cross-Regulation can be Improved• The high current winding must have the best coupling to primary

• Minimize leakage between all secondary windings

• Optimize, not minimize, the leakage inductance of auxiliary windings to primaryp , , g y g p y

• Use winding placement to control leakage inductance– Winding stackup– Spread each winding over the full width of the bobbin for better coupling

Prim

ary

A

Prim

ary

A

Prim

ary

A

Prim

ary

B

Prim

ary

B

Prim

ary

B

W2A

W2A

W2A

W2B

W2B

W2BW3

W3

W3or Better

than

If W3 is lightlyloaded and W2

is the high-current main

• Operate main output in CCM

• Try to avoid operating the auxiliary outputs in DCM. In some cases, consider using resistance in series with the diode

output.

using resistance in series with the diode

• Consider winding more than one auxiliary secondary simultaneously (multifilar)

• Lower clamp voltage may help

Texas Instruments—2010 Power Supply Design Seminar 1-26

– Trade-off between cross regulation, efficiency, peak drain voltage and current limit– Some other types of clamp circuits may provide better results than the RCD clamp

Page 28: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Impact of Transformer Design on Flyback EfficiencyTh f ll i id li b d d i t f• The following guidelines can be used during transformer design to optimize the converter efficiency– Minimize leakage inductance from primary

to main (high current) secondary

300

275

250

300

d (A

)2

d (A

)2

Secondary RMSto main (high-current) secondary– Minimize transformer high frequency

conduction loss• Multifilar or Litz wires when necessary

225

200

175

150

125

200

MS

Cur

rent

Squ

ared

S C

urre

nt S

quar

ed

Secondary RMSCurrent Squared

at 48 V

Good Duty-CycleTrade-Off with

48-V Inputy• Interleaving• Select core shape for minimum number of layers

– Optimize the transformer turns ratio for

125

100

75

50

25

100

20x

Prim

ary

RM

Sec

onda

ry R

MS

20 x Primary RMSCurrent Squared at 48 V

p

best efficiency– Select CCM operation

0 00 20 80 10040 60

Duty Cycle (%)

• Other factors also have an indirect impact on efficiency• Other factors also have an indirect impact on efficiency– Cross-regulation

• VDD rail used for gate drive• Output capacitors rms current

Texas Instruments—2010 Power Supply Design Seminar 1-27

– Impact of fringing flux from gap• Worse with planar transformers

Flyback and EMI• Flyback ⇒ IP and IS pulsate ICMFlyback ⇒ IP and IS pulsate

– Use low Z caps, minimize loop areas – Output filter often required

• Interwinding capacitance ⇒ CM CE–+

Vi VoutIDM

ICM2

P S

N1:N2

IP IS

• Interwinding capacitance ⇒ CM CE

• Transformer and diode configuration impact effective capacitance

Less if facing indings at same AC

++––

Clamp VDDM

ICM2

FETOutput to

Chassis CM– Less if facing windings at same AC potential

– Diode versus synchronous rectifier– Flyback ≠ Forward

+Vi

Chassis CM

econ

dary

ndar

yB

ndar

yA

y

mar

yC

mar

yB

mar

yA

• Better to start with end connected to primary MOSFET– Shields Vdrain E-field

R d i t i di it ff t CE

Oth

erS

Seco

n

Seco

n

Prim

Prim

Prim– Reduces interwinding capacity effect on CE

• Minimize leakage for low H-field RE

• Interleaving reduces H-field RE but may increase ff ti P S i t i di it

Texas Instruments—2010 Power Supply Design Seminar 1-28

FET

VD +

–Vout

effective P-S interwinding capacitance

• Center-gap transformer

Page 29: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Flyback and EMI• Flyback ⇒ IP and IS pulsate ICMFlyback ⇒ IP and IS pulsate

– Use low Z caps, minimize loop areas – Output filter often required

• Interwinding capacitance ⇒ CM CE–+

Vi VoutIDM

ICM2

P S

N1:N2

IP IS

• Interwinding capacitance ⇒ CM CE

• Transformer and diode configuration impact effective capacitance

Less if facing indings at same AC

++––

Clamp VDDM

ICM2

FETOutput to

Chassis CM– Less if facing windings at same AC potential

– Diode versus synchronous rectifier– Flyback ≠ Forward

+Vi

Chassis CM

econ

dary

ndar

yB

ndar

yA

y

mar

yC

mar

yB

mar

yA

• Better to start with end connected to primary MOSFET– Shields Vdrain E-field

R d i t i di it ff t CE

Oth

erS

Seco

n

Seco

n

Prim

Prim

Prim– Reduces interwinding capacity effect on CE

• Minimize leakage for low H-field RE

• Interleaving reduces H-field RE but may increase ff ti P S i t i di it

Texas Instruments—2010 Power Supply Design Seminar 1-28

FET

VD +

–Vout

effective P-S interwinding capacitance

• Center-gap transformer

Page 30: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Agenda

1. Basics of Flyback Topology

2 Impact of Transformer Design on Power Supply2. Impact of Transformer Design on Power Supply Performance

3. Power Supply Current Limiting

4. Summary4. Summary

Texas Instruments—2010 Power Supply Design Seminar 1-29

Page 31: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Power Supply Current Limiting – Overview

• Current-limiting characteristic of power supply defines:– Output power beyond which output voltage falls out

of regulation. Corresponds to the “output load-current li it” (I )limit” (Iout_LIM)

– Output current in overload situations• including short-circuitsincluding short circuits

• Current-limiting characteristic is influenced by parasiticsparasitics– Turn-off delays, leakage inductance,…

Texas Instruments—2010 Power Supply Design Seminar 1-30

Page 32: Under the Hood of Flyback SMPS Designs PPT Presentation

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Understanding Current Limit –Flyback Power Supply with Peak CMC in CCM

Ipk_LIMIA _LIM

PrimaryCurrent

ΔILD x Ts

Clock Ramp

+Vi Io

Iout

Vo

ClampSlope Comp

R

1:n2

Time (t)

m2S

SecondaryCurrent Io_avg(1 – D) x Ts

Power Supply Controller

PWM

COMP(From Error

I_SENSE

VC R s

R

C

RSC

+

I i th i k

Just at Current Limit, Output Begins to Fall Out of Regulation

Ipk_LIMPrimaryCurrent D x T

(Amp) VC_LIM Current-

SenseFilter

• Ipk_LIM is the primary peak current limit

• Io avg is the output currentSecondary

CurrentIo_avg

(1 – D) x Ts

D x Ts

o_avg p

• If short-circuit, Io_avg can be much higher than when current limit has just been

Output Short CircuitTime (t)

( )AII I 1 D×

Texas Instruments—2010 Power Supply Design Seminar 1-31

current limit has just been reached

( )Aout o _ avg

2I I 1 D

n= = × −

Page 33: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Current-Limit Model – Basic Representation• Peak CMC in CCM, fixed switching frequency

VCI

ΔIL

m2

m1

I (Average MagnetizingCurrent)

A

IRpk

S=

Gate Control

ΔIL

D × Ts

)

Gate Control

Neglecting DC voltage drops:

( )oL

2VIm

1 D T LΔ= ≈ oVD

V V=

Neglecting DC voltage drops:

Texas Instruments—2010 Power Supply Design Seminar 1-32

( )2S 21 D T n L− × × 2 i on V V× +

Page 34: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Influence of Input DC Voltage on Output Load Current Limit – Impact of Feedforward

imit

(A)

10

9Without FeedforwardClock Ramp

+Vi Io

Iout

Vo

Clamp

Slope Comp

1:n2

FeedforwardRff

ad C

urre

nt L

8

7

Without FeedforwardPower Supply Controller

PWM

COMP

Clock Ramp

I_SENSE

VC R s

R

C

RSC

+

Out

put L

oa

6With Feedforward

COMP(From Error

Amp) VC_LIM

20 25 3530 40 45 50 55Input Voltage (V)

5

• With feedforward, output load current limit becomes almost independent of

If Vi ↑ ⇒ (1 – D) ↑ ⇒ Iout_LIM increases

input voltage⇒ Better control during overload, less stress on power circuitry ⇒ Power limit

C t d/ i d ti

Texas Instruments—2010 Power Supply Design Seminar 1-33

⇒ Cost and/or size reduction

• Feedforward also improves line noise rejection

Page 35: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Current Limit Model – With Feedforward

K × Vff i

VC

R × Magnetizing

S

R × mS 2R × IpkS

R × IASR × mS 1

ff i

Gate Control

D × Ts

g gCurrent)

• Kff x Vi is the feedforward contribution

Gate Control

ff i– Subtracting it from Vc is identical to adding it to current feedback

Texas Instruments—2010 Power Supply Design Seminar 1-34

Page 36: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Current Limit Model – Adding Slope Compensation

VCm0 K Vff i×

Slope Compensation (Clock Ramp)

m x0 2(T – T )s dis

R × mS 2 R × m

R × IAS

2

D × T2

s

S 2 R × mS 1

D × Ts

Tdis

R × IL_pkminS

• Slope compensation to avoid subharmonic oscillation at duty-cycle close to or

Gate Control

s

Slope compensation to avoid subharmonic oscillation at duty cycle close to or higher than 50%

• For easier understanding, slope compensation contribution subtracted from Vc.– Equivalent to slope compensation added to current feedback

Texas Instruments—2010 Power Supply Design Seminar 1-35

– Equivalent to slope compensation added to current feedback– In that circuit representation, the slope compensation is capacitively-coupled

Page 37: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Current Limit Model – With all Delays, Slope Compensation and Feedforwardp

• For a more accurate, parasitics must be included in the analysisanalysis

• Parasitic delaysRC filter time delay– RC filter time delay

– Turn off delay, including current comparator and gate drive – FET turn-on delay from onset of slope compensation ramp

• See Topic 1, Appendix A, in the Seminar Manual for detailed equations

Texas Instruments—2010 Power Supply Design Seminar 1-36

Page 38: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Influence of Transformer Leakage on Output Load Current Limitp

• Rate of rise of current is influenced by leakage, commutation primary-to-secondary is not instantaneous

Lleak2

+– +– –Vmag1 VL

VDVleak2 +

Ideal XfmrN1:N2

IS

secondary is not instantaneous⇒ Loss of volt-seconds (also influenced

by the clamp voltage)⇒ Duty-cycle and average magnetizing

Clamp+Vi

IP

+ + –Vmag1 Vmag2Lm

FET

Vout

⇒ Duty-cycle and average magnetizing current have to increase to maintain the output voltage

⇒ Higher conduction loss

FET

g⇒ Higher transformer peak current than

expected-> Iout_LIM lower than expected

IP

IS

• Leakage inductance helps however to keep control of the output current in output ( )oVV D V D 1 D D

Lost Volt-SecondsDtr

Texas Instruments—2010 Power Supply Design Seminar 1-37

the output current in output short-circuit situation ( )o

i new clamp tr new tr2

V D V D 1 D Dn

× ≈ × + × − −

Page 39: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

Current Limit During Overload – Example with Combined Effects

• In overload: Output current increases ⇒ output voltage decreases

Assuming no hiccup mode25

decreases– Short-circuit: output current

much higher than at onset of current limit 15

20

utC

urre

nt(A

)

Without Leakage

With Leakage

• Parasitic turn off delays may result in an out of control current if volt-seconds

10Out

pubalance is not possible at the transformer– Transformer’s leakage

i d t h l t i t i

00.511.522.533.544.555

Vo1 Vo2Output Voltage (V)Short Circuit

inductance helps to maintain that balance

– If no leakage, the imbalance occurs starting at Vo1

( )o _ shortS del _ OFF tr S

2

i d l OFF l S

VT t D T

nV t V D T

× − − × =

× − × ×

Texas Instruments—2010 Power Supply Design Seminar 1-38

g o1– With leakage, the imbalance

occurs only from Vo2

i del _ OFF clamp tr S V t V D T× × ×

Page 40: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

SummaryTh fl b k t f i th k l t f th• The flyback power transformer is the key element of the converter, for optimum efficiency and cross-regulation

Parasitics ha e a strong infl ence on fl back con erter’s• Parasitics have a strong influence on flyback converter’s behavior, particularly under overload or short-circuit conditions

• The primary clamp circuit design is a trade-off between:– Efficiency – Peak drain voltage– Output current limit – Cross-regulationCross regulation

• Simple feedforward technique can be used to optimize the converter and the system, lowering worst-case components

Texas Instruments—2010 Power Supply Design Seminar 1-39

converter and the system, lowering worst case components stress and reducing the overall cost and size

Page 41: Under the Hood of Flyback SMPS Designs PPT Presentation

SLUP254

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A122010

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