UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n...

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UFJF – FABRICIO CAMPOS

Transcript of UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n...

Page 1: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state

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NAND 74AS00

AD TLC3548 SRAM CY7C199 (32Kx8 SRAM)

DSP TMS320F243

Page 3: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state

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AD TLC3548

• Successive-approximation,• CMOS, • 14-bit, • Vdd=5V, • 200KSPS, • 8-Channel Unipolar ADC, • Built-In 4-V Reference, • SPI - Serial Peripheral Interface Bus

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UFJF – FABRICIO CAMPOS

AD TLC3548

Page 5: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state

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DSP TMS320F243

• 20 Mhz

• 16-bit fixed-point DSP, CMOS Technology

• Memory

• 544 Words x 16 Bits of On-Chip Data/Program DRAM (DRAM)

• 8K Words x 16 Bits of EEPROM

• AD 10-Bit Analog-to-Digital Converter, 8 channels, ADC Conversion Time 900ns

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UFJF – FABRICIO CAMPOS

SRAM CY7C199 (32Kx8 SRAM)

• 32K x 8 Static RAM

• High speed - 10 n

• CMOS for optimum speed/power

• TTL-compatible inputs and outputs

• Three-state drivers.

Como o DSP é de 16bits, associa-se 2 memórias para formar 32K x 16

Page 7: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state

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SRAM CY7C199

Page 8: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state

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Capítulo 12) Dispositivos de MemóriaTerminologia / Velocidade / PreçoTipos de memória / Leitura / EscritaCapacidadeProcedimentos de Leitura e EscritaROM / FLASH / RAM / SRAM / DRAM

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UFJF – FABRICIO CAMPOS

12.1) TerminologiaCélula de memória: Dispositivo usado para armazenar um único bitPalavra de memória: Grupo de BitsByte = 8 bitsCapacidade: Quantos bits podem ser armazenados 4K x 20 = 4096x20 bitsEndereço: Número que identifica uma posição de uma palavra na memória

Page 10: UFJF –FABRICIO CAMPOS · SRAM CY7C199 (32Kx8 SRAM) • 32K x 8 Static RAM • High speed - 10 n • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Three-state

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12.1) TerminologiaOperação Leitura / Escrita

Tempo de Acesso: tACC tempo de Leitura

Memória Volátil: Se a alimentação for removida a informação é perdida

Memória de Acesso Sequencial (SEQUENTIAL-ACCESS-MEMORY - SAM) O tempo de acesso não é constante

Memória de Acesso Aleatório (RANDON-ACCESS-MEMORY -RAM): O tempo de acesso é o mesmo para qualquer endereço

Memória de Leitura e Escrita (READ/WRITE MEMORY - RWM)

Memória Apenas de Leitura (READ-ONLY-MEMORY - ROM)

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12.1) TerminologiaDispositivo de memória Estática: Os dados permanecem enquanto a fonte estiver aplicada

Dispositivo de memória Dinâmica: Os dados precisam ser periodicamente reescritos (REFRESH)

Memória Principal: Instruções e Dados

Memória Auxiliar: Armazenamento

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12.2) Princípios de OperaçãoEntradas de EndereçoBarramentos de dadosEntrada de controle R/~WHabilitação

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12.2) Princípios de OperaçãoEscrita e Leitura

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12.3) Conexões CPU-MEMÓRIABarramentos: Endereço

DadosControle

Operações: EscritaLeitura

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12.4) Memória Apenas Leitura - ROM24=16 endereçosPalavras de 8 bits

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12.5) Arquitetura Interna da ROM

Matriz de RegistradoresDecodificador de LinhasDecodificador de ColunasBuffer de Saída

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12.6) Temporização da ROMtACC – Tempo de acessotOE – Tempo de habilitação de saída

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12.7) Tipos de ROM

MROM – ROM Programada por máscaraPROM – ROM ProgramávelEPROM – Erasable Programable ROMEEPROM – Electrically Erasable Programable ROMCD-ROM – Compact Disk ROM

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12.7) Tipos de ROM

MROM – ROM Programada por máscaraTem a informação armazenada ao mesmo tempo que o circuito é fabricado

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UFJF – FABRICIO CAMPOS

12.7) Tipos de ROMMROM – ROM Programada por máscara

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12.7) Tipos de ROM

PROM – ROM ProgramávelPode ser programada um única vez com conexões a fusívelOTP – One Time Programmable

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12.7) Tipos de ROMEPROM – Erasable Programable ROMÉ não volátilPode ser programada pelo usuário e também pode ser apagadaAs células são constituídas de transistores MOS e programadas com tensões elevadasAs células são apagadas expondo-se o silício à luz ultravioleta de alta intensidade por vários minutos

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12.7) Tipos de ROMEPROM – Erasable Programable ROM


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