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U217B/ U217B-FP
TELEFUNKEN SemiconductorsRev. A1, 24-May-96
1 (11)
Zero Voltage Switch with Adjustable Ramp
DescriptionThe integrated circuit, U217B, is designed as a zero-voltage switch in bipolar technology. It is used to controlresistive loads at mains by a triac in zero-crossing mode.A ramp generator allows to realize power control function
by period group control, whereas full wave logicguarantees that full mains cycles are used for loadswitching.
Features� Direct supply from the mains
� Current consumption ≤ 0.5 mA
� Very few external components
� Full wave drive – no dc current component in the loadcircuit
� Negative output current pulse typ. 100 mA – short circuit protected
� Simple power control
� Ramp generator
� Reference voltage
Applications� Full wave power control
� Temperature regulation
� Power blinking switch
Package: DIP8, SO8
Block Diagram
Rampgenerator
Pulseamplifier
Comparator
R118 k��2 W
D1 BYT86/800 L
TIC236N
95 10872
Synchronization Supply
Full wave logic+
–
Reference voltage1.25 V
1
3
4
R4
100 k�2 8 5C2
2.2 �F/10 V
R5
15 k�
min
max
100 k�
R6
58 k�
7
6
220 k�
C1
100 �
R3
Load1000 W
VM =
230 V~
N
(Rsync)
R2
(250 V~)
G
MT2
MT1
GND
+
100 �F/16 V
Figure 1. Block diagram with typical circuit, period group control 0 to 100%
U217B/ U217B-FP
TELEFUNKEN SemiconductorsRev. A1, 24-May-96
2 (11)
General DescriptionThe integrated circuit, U217B, is a triac controller for thezero crossing mode. It is meant to control power inswitching resistive loads of mains supply.
Information regarding supply sync. is provided at Pin 8via resistor RSync.
To avoid dc load on the mains, full wave logic guaranteesthat complete mains cycles are used for load switching.
A fire pulse is released when the inverted input of thecomparator is negative (Pin 4) with respect to the non–inverted input (Pin 3) and internal reference voltage.
A ramp generator with free selectable duration is possiblewith capacitor C2 at Pin 2 which provides not onlysymmetrical pulse burst control (figure 3), but alsocontrol with superimposed proportional band (figure 10).Ramp voltage available at capacitor C2 is decoupledacross emitter follower at Pin l. To maintain the lampflicker specification, ramp duration is adjusted accordingto the controlling load. In practice, interference should beavoided (temperature control). Therefore in such cases atwo point control is preferred to proportional control. Onecan use internal reference voltage for simple applications.In that case Pin 3 is inactive and connected to Pin 7(GND), figure 9.
Rampcontrol1
C2–VS
95 11306
2
Figure 2. Pin 1 internal network
95 11307
V1
1.4 V
7.3 V
–VS(Pin5)
T
Vmin
t
Final voltage
Initial voltageVmax
Figure 3.
Firing Pulse Width tp, (Figure 4)This depends on the latching current of the triac and itsload current. The firing pulse width is determined by thezero crossing identification which can be influenced withthe help of sync. resistance, Rsync, (figure 6).
tp =2
�arc. sin
IL � VM
P 2�
whereasIL = Latching current of the triacVM = Mains supply, effectiveP = Power load (user’s power)
Total current consumption is influenced by the firingpulse width, which can be calculated as follows:
Rsync�VM 2� sin (��
tp
2 )–0.6 V3.5 � 10–5A
–49 k�
0.01
0.10
1.00
10.00
10 100 1000 10000
t (
ms
)
P ( W )96 11939
p
IL ( mA)
100
200
50
Vmains = 230 V∼
Figure 4.
0 300 600 900 12000
400
800
1200
2000
R
(
k
)S
ync
tp ( �s )
1500
95 9978
�
1600VM=230V ACTamb=25°C
Figure 5.
U217B/ U217B-FP
TELEFUNKEN SemiconductorsRev. A1, 24-May-96
3 (11)
Triac Firing Current (Pulse)
This depends on the triac requirement. It can be limitedwith gate series resistance which is calculated as follows:
RGmax �7.5 V – VGmax
IGmax– 36 �
IP =IGmax
T�tp
whereas: VG = Gate voltageIGmax = Max. gate currentIp = Average gate currenttp = Firing pulse widthT = Mains period duration
Supply VoltageThe integrated circuit U217B (which also containsinternal voltage limiting) can be connected via the diode(D1) and the resistor (R1) with the mains supply. Aninternal climb circuit limits the voltage between Pin 5 and7 to a typical value of 9.25 V.
Series resistance R1 can be calculated (figures 7 and 8) asfollows:
R1max = 0.85Vmin – VSmax
2 Itot;
P(R1) =
(VM – VS)2
2 R1
Itot = IS + IP + IxwhereasVM = Mains voltageVS = Limiting voltage of the ICItot = Total current consumptionIS = Current requirement of the IC (without load)Ix = Current requirement of other peripheral
componentsP(R1) = Power dissipation at R1
0 3 6 9 120
10
20
30
40
50
R
( k
)
1
I tot ( mA )
15
95 10114
VMains=230V�
�
Figure 6.
0 3 6 9 120
Itot ( mA )
15
95 10116
VMains=230V�
1
2
3
4
6
P
( W
)
5
R1
Figure 7.
U217B/ U217B-FP
TELEFUNKEN SemiconductorsRev. A1, 24-May-96
4 (11)
Absolute Maximum RatingsReference point Pin 7
Parameters Symbol Value UnitSupply current Pin 5 –IS 30 mASync. current Pin 8 ISync. 5 mAOutput current ramp generator Pin 1 IO 3 mAInput voltages Pin 1, 3, 4, 6
Pin 2Pin 8
–VI–VI±VI
≤VS2 to VS≤ 7.3
V
Power dissipationT b = 45°C P 400 mWTamb = 45°CTamb = 100°C
Ptot 400125
mW
Junction temperature Tj 125 °COperating-ambient temperature range Tamb 0 to 100 °CStorage temperature range Tstg –40 to + 125 °C
Thermal Resistance
Parameters Symbol Maximum UnitJunction ambient RthJA 200 K/W
Electrical Characteristics
–VS = 8.5 V, Tamb = 25°C, reference point Pin 7, unless otherwise specified
Parameters Test Conditions / Pin Symbol Min Typ Max UnitSupply voltage limitation –IS = 5 mA Pin 5 –VS 8.6 9.25 9.9 VSupply current Pin 5 –IS 500 �AVoltage limitation I8 = ± 1 mA Pin 8 ± VI 7.5 8.7 VSynchronous current Pin 8 ±Isync 0.12 mAZero detector ±Isync 35 �AOutput pulse width VM= 230 V�,
Rsync = 220 k�Rsync = 470 k�
tP 260460
�s
Output pulse current V6 = 0 V Pin 6 –IO 100 mAComparatorInput offset voltage Pin 3,4 VI0 5 15 mVInput bias current Pin 4 IIB 1 �ACommon mode input voltage
Pin 3,4 –VIC 1 (VS–1) V
Threshold internal reference
V3 = 0 V Pin 4 –VT 1.25 V
Ramp generator, Pin 1, figure 1Period –IS= 1 mA, Isync =1 mA,
C1 = 100 �F, C2 = 1 �F,R4= 100 k� T 1.5 s
Final voltage V1 0.9 1.40 1.80 VInitial voltage
1
6.8 7.3 7.8Charge current V2 = 0 V, I8 = –1 mA Pin 2 –I2 13 17 26 �A
U217B/ U217B-FP
TELEFUNKEN SemiconductorsRev. A1, 24-May-96
5 (11)
Applications
8 7 6 5
1 2 3 4
U217B
VDR
RL270 k�
VM = 230 V ~
56 �
56 k�
39 k�47 �F/10 V
II � 1.5 mA
BYT86/800
18 k�1.5 W
L
N
+5 V
CNY21
VI
95 11308
Load
Figure 8. Power switch
Rampgenerator
Pulseamplifier
Comparator
R118 k�/2 W
D1 BYT86/800 L95 11309
Synchronization Supply
Full wave logic+
–
Reference voltage1.25 V
1
3
4
R4
100 k�2 8 5
2.2 �F/10 V
R9
150 �
7
6
220 k�
C1
100 �
R3
Load1000 W
VM =230 V~
N
(Rsync)R2
(250 V~)
R51)
BC237
R6
100 k�
R8
470 k�
R(25)
100 k�
NTC/M87B value =
3988
R7
130 k�
Rp
220 k�
+
C2
Figure 9. Temperature control 15 to 35°C with sensor monitoringNTC–Sensor M 87 Fabr. Siemens
R(25) =100 k�/B =3988 ⇒ R51) determines the proportional rangeR(15) = 159 k�
R(35) = 64.5 k�
U217B/ U217B-FP
TELEFUNKEN SemiconductorsRev. A1, 24-May-96
6 (11)
8 7 6 5
1 2 3 4
U217B
270 k�
VM= 230 V ~
56 �
BYT86/800
18 k�/1.5 W
L
N
95 11310
100 nF/250 V ~
82 �
0.5 ...2.2 kW
110 k�150 k�
47 �F/ 16V 0.47 �F/10 V
Figure 10. Power blinking switch with f � 2.7 Hz, duty cycle 1:1, power range 0.5 to 2.2 kW
U217B/ U217B-FP
TELEFUNKEN SemiconductorsRev. A1, 24-May-96
7 (11)
8 7 6 5
1 2 3 4
U217B
510 k�
VM = 230 V ~
62 �
BYT86/800L
N
95 11311
0.35 ...1.5 kW
910 k�
R2
IH = 50 mA
LoadR1
9.1 k�
R6
1N4148
R16
220 k�
R7
12 k�
C3
10 nF
R10
25 k�
R15
NTC
33 k�
R9
12 k�
56 k�
R8 C2
1 �F
C4
47 �F100 �F/12 V
C5
C1
2.2 �F
R3
R5
680 k�
680 k�
R4
13 k�/2 W
1N4148–�T
Figure 11. Room temperature control with definite reduction (remote control) for a temperature range 5 to 30°C
U217B/ U217B-FP
TELEFUNKEN SemiconductorsRev. A1, 24-May-96
8 (11)
8 7 6 5
1 2 3 4
U217B
220 k�
56 �
BYT51G
18 k�1.5 W
L
N
95 11312
Load/ 1000 W
68 �F/10 V
VDR
10 nF
220 k�
500 k�
50 k�
NTC
VM = 230 V ~
(680 k��
(2 M��
(200 k��
Figure 12. Two–point temperature control for a temperature range 15 to 30°C
U217B/ U217B-FP
TELEFUNKEN SemiconductorsRev. A1, 24-May-96
9 (11)
8 7 6 5
1 2 3 4
U217B
430 k�
VM = 230 V~
92 �
BYT51G
18 k�/1.5 W
L
N
95 11313
�68 �F/ 10 V
Load/400 WRsync
R3
27 k�
330 k�
R5
8.2 k�R7/
C1
C2
150 nF
R15/ 50 k�
R4/ 39 k�
R1
D1
200 k�NTC
D2
1N4148
33 �F/10 V
C3
R6
Figure 13. Two-point temperature control for a temperature range 18 to 32°C and hysteresis of ± 0.5°C at 25°C
U217B/ U217B-FP
TELEFUNKEN SemiconductorsRev. A1, 24-May-96
10 (11)
Dimension in mm
Package: DIP8
94 8873
Package: SO8
94 8862
U217B/ U217B-FP
TELEFUNKEN SemiconductorsRev. A1, 24-May-96
11 (11)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systemswith respect to their impact on the health and safety of our employees and the public, as well as their impact onthe environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known asozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs andforbid their use within the next ten years. Various national and international initiatives are pressing for an earlier banon these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy ofcontinuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not containsuch substances.
We reserve the right to make changes to improve technical design and may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorizedapplication, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended orunauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423