Toggle-Mode NAND to Fill Growing Need for Higher Performancebswd.com/FMS09/FMS09-T2A-Yoon.pdf ·...
Transcript of Toggle-Mode NAND to Fill Growing Need for Higher Performancebswd.com/FMS09/FMS09-T2A-Yoon.pdf ·...
Toggle-Mode NAND to Fill Growing Need for Higher Performance
Ha Ryong (Harry) Yoon
Sr Manager in Technical MarketingSr. Manager in Technical MarketingSamsung Semiconductor Inc.
Santa Clara, CA USAAugust 2009 1
Process Technology Evolution
Density Keeps IncreasingDensity Keeps Increasing
90nm 70nm 60nm 50nm 40nm 30nm 20nm
Performance & Reliability Concerns !!!Performance & Reliability Concerns !!!
90nm 70nm 60nm 50nm 40nm 30nm 20nm
Santa Clara, CA USAAugust 2009 2
Growing Need for Higher PerformanceGrowing Need for Higher Performance- Interface Speed Trend
SATA 1
SATA 2
SATA 3
MMC 4.3
MMC 4.4
UFS
SD 3 0 UHS-2
USB 2.0
USB 3.0
SD 2.0
SD 3.0 UHS-1
SD 3.0 UHS-2
BW I/F Speed(Per Pin)
Santa Clara, CA USAAugust 2009 3
0 1 2 3 4 5 6
Gbps
Growing Need for Higher PerformanceGrowing Need for Higher Performance- NAND Performance Requirement
PCIe3.0 (x16,32ch)
250Mbps
PCIe2 0 (x4 10ch)
500Mbps
200
150 SD3.0(UHS2, x4,2ch))USB3.0 (x1,4ch)
UFS (x1,2ch)
PCIe2 0
PCIe2.0 (x4,10ch)
100
SD3 0(UHS1) MMC4 4
SATA3-6G (x1,10ch)
PCIe2.0 (x1,4ch or x4,16ch)
SAS6G (x1,16ch)
50 40Mbps, Legacy NANDSD3.0(UHS1) MMC4.4
Santa Clara, CA USAAugust 2009 4
2008 2009 2010 2011 2012* Only I/F BW translated. If considering latency, min requirement would be increased
Market Expansion100% • Enterprise-class SSD (SATA3,
NAND Consumption in EDP
80%
90%
100%
58%64%
78%
Enterprise class SSD (SATA3, SAS, PCIe) and high-speed card(USB3.0, UHS2, UFS) are fueling the need of higher
50%
60%
70%
M/S
49%53%
58% fueling the need of higher performance NAND
• Enterprise SSD will take ~65% of
30%
40%
M
Flash Card (USB + Cards)
Solid-State Drives 44%
41%
Enterprise SSD will take 65% of SSD market at 2012
• USB will take ~14% of NAND
0%
10%
20% 36%
30%17%
USB will take 14% of NAND market at 2012
• SD & uSD will take ~80% of flash
Santa Clara, CA USAAugust 2009 5
2008 2009 2010 2011 2012 2013Year Source: Gartner (February, 2009)
SD & uSD will take 80% of flash card market at 2012
Toggle-Mode NAND?
High speed “Toggle-Mode” operation• No clock – Asynchronous Double Data Rate• High performance by using the asynchronous
interface for backward compatibilityBidirectional DQS for read and write operations• Bidirectional DQS for read and write operations
Toggle-Mode NANDCE#CLEALE
CE#CLEALE
SLC/MLCNAND
DD
R I
/FLo
gic
RE#WE#WP#
R/B#
LegacyNAND
RE#WE#WP#R/B#DQS
ToggleNAND
Santa Clara, CA USAAugust 2009 6
D
DQ[0:7]Q
DQ[0:7]
Why Toggle-Mode NAND?
High performance• Supports 133Mbps and higher
Less power consumption• No free-running clock
Flexibility of operating frequency• No additional mode change required
Easy migration from legacy NAND• Same signal functionality as legacy NAND
Santa Clara, CA USAAugust 2009 7
Differentiation from OthersWRITE READ
No free-running clock• Less power consumption
F f IP i
WE#
DQS
RE#
DQS
WRITE READ
• Free from IP issuesDin Dout
Flexibility of operating frequencyFlexibility of operating frequency• No additional mode-set change required
Simple adoption• Same signal functionality as legacy NAND
Santa Clara, CA USAAugust 2009 8
Development Status & Roadmap
1st Gen available 2H ’09 at 133Mbps2nd Gen(200Mbps) targeted for early’11, but ( p ) g yentry time depends on market needs and requirements
’09 ’11 or earlier? ~’13(Investigating)
Gen 1133Mbps
Gen 2200Mbps
Gen 3400Mbps
Santa Clara, CA USAAugust 2009 9
Standardization Status in JEDEC
Item Status CommentsItem Status CommentsPackaging & Pin-out On Going Ball Configuration Done
Addressing & Bad Block DonegDefinitionSignal Definition On Going Under Documentation
AC P t DAC Parameter Done
Initialization & Identification Done
Timing/Command Set On Going Basic Command Set DoneTiming/Command Set On Going Basic Command Set Done
Interface & I/O Characteristics On Going AC/DC & Operating Condition Done
P t P D fi iti O G i B t [100 0] D
Santa Clara, CA USAAugust 2009 10
Parameter Page Definition On Going Byte[100:0] Done
Thank You !Thank You !For more information,[email protected]@ssi.samsung.com
Santa Clara, CA USAAugust 2009 11