TL032, TL032A ENHANCED-JFET LOW-POWER...
Transcript of TL032, TL032A ENHANCED-JFET LOW-POWER...
TL032, TL032A ENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERS SLOS033D – JULY 1988 – REVISED AUGUST 1994
Copyright 1994, Texas Instruments Incorporated
2–1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
• Maximum Offset Voltage . . . 800 µV
• High Slew Rat e . . . 2.9 V/µs Typ
• Low Input Bias Curren t . . . 2 pA Typ
• Very Low Power Consumption13 mW Typ
• Output Short-Circuit Protection
description
The TL032 and TL032A dual operationalamplifiers incorporate well-matched, high-voltageJFET and bipolar transistors in a monolithicintegrated circuit. These devices offer thesignificant advantages of Texas Instruments newenhanced-JFET process. This process affords notonly low initial offset voltage due to the on-chipzener trim capability but also stable offset voltageover time and temperature. In comparison,traditional JFET processes are plagued bysignificant offset voltage drift.
This new enhanced process still maintains thetraditional JFET advantages of fast slew rates andlow input bias and offset currents. Theseadvantages coupled with low power consumptionmake the TL032 well suited for new state-of-the-art designs as well as existing design upgrades.
The TL032 has been designed to be functionallycompatible and pin compatible with the TL062.Two offset voltage grades are available: TL032(1.5 mV max) and TL032A (800 µV max).
A variety of available packaging options includessmall-outline and chip-carrier versions for high-density system applications.
AVAILABLE OPTIONS
TV
PACKAGE
TAVIOmaxAT 25°C
SMALLOUTLINE
(D)
CHIPCARRIER
(FK)
CERAMICDIP(JG)
PLASTICDIP(P)
0°Cto
0.8 mV TL032ACD TL032ACPto
70°C
0.8 mV1.5 mV
TL032ACDTL032CD — —
TL032ACPTL032CP
– 40°Cto
0.8 mV TL032AID TL032AIPto
85°C
0.8 mV1.5 mV
TL032AIDTL032ID — —
TL032AIPTL032IP
– 55°Cto
0.8 mV TL032AMD TL032AMFK TL032AMJG TL032AMPto
125°C
0.8 mV1.5 mV
TL032AMDTL032MD
TL032AMFKTL032MFK
TL032AMJGTL032MJG
TL032AMPTL032MP
The D packages are available taped and reeled. Add R suffix to devicetype (e.g., TL032CDR).
PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.
1
2
3
4
8
7
6
5
1OUT1IN–1IN+
VCC –
VCC +2OUT2IN –2IN+
D, JG, OR P PACKAGE(TOP VIEW)
3 2 1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NC2OUTNC2IN –NC
NC1IN –
NC1IN+
NC
FK PACKAGE(TOP VIEW)
NC
1OU
TN
C
NC
NC
NC
2IN
+N
C
CC
–V
NC – No internal connection
CC
+V
–9000
Per
cent
age
of A
mpl
ifier
s –
%
VIO – Input Offset Voltage – µV
900
15
–600 – 300 0 300 600
3
6
9
12
DISTRIBUTION OF TL032AINPUT OFFSET VOLTAGE
ÎÎÎÎÎÎÎÎÎÎP PackageÎÎÎÎÎÎÎÎÎÎ
TA = 25°C
ÎÎÎÎÎÎÎÎÎÎ
VCC± = ±15 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
1321 Amplifiers Tested From 1 Wafer Lot
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
description (continued)
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterizedfor operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full militarytemperature range of – 55°C to 125°C.
equivalent schematic (each amplifier)
Q15
R2
IN–
IN+
Q2
Q3
Q5
VCC+
Q14
Q6R4
Q8 Q10 R7
Q11
R6
Q12
R3
C1
Q9
Q7
Q4
R5R1
Q1
JF1 JF2
Q13
Q16R8
JF3 JF4
Q17
OUT
D1
VCC–
symbol (each amplifier)
+
–OUT
IN –
IN +
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
absolute maximum ratings over operating free-air temperature range (unless otherwise noted) †
Supply voltage, VCC+ (see Note 1) 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply voltage, VCC– (see Note 1) –18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage (see Note 2) ±30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage, VI (any input) (see Notes 1 and 3) ±15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II (each input) ±1 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO (each output) ±40 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current into VCC+ 160 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current out of VCC– 160 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 4) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature, TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M suffix –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1 /16 inch) from case for 10 seconds: D or P package 260°C. . . . . . . . . . . . . . Lead temperature 1,6 mm (1 /16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+, and VCC–.2. Differential voltages are at IN+ with respect to IN–.3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less.4. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGETA ≤ 25°C
POWER RATINGDERATING FACTORABOVE TA = 25°C
TA = 70°CPOWER RATING
TA = 85°CPOWER RATING
TA = 125°CPOWER RATING
D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW
FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW
JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW
P 1000 mW 8.0 mW/°C 640 mW 520 mW 200 mW
recommended operating conditions
C SUFFIX I SUFFIX M SUFFIXUNIT
MIN MAX MIN MAX MIN MAXUNIT
Supply voltage, VCC ±5 ±15 ±5 ±15 ±5 ±15 V
Common mode input voltage VICVCC± = ±5 V –1.5 4 –1.5 4 –1.5 4
VCommon-mode input voltage, VICVCC± = ±15 V –11.5 14 –11.5 14 –11.5 14
V
Operating free-air temperature, TA 0 70 –40 85 –55 125 °C
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
electrical characteristics at specified free-air temperature
PARAMETER TEST CONDITIONS †
TL032C, TL032AC
UNITPARAMETER TEST CONDITIONS TA† VCC± = ± 5 V VCC± = ±15 V UNITAMIN TYP MAX MIN TYP MAX
V I ff l
V 0
TL032C25°C 0.69 3.5 0.57 1.5
VVIO Input offset voltage
V 0
TL032CFull range 4.5 2.5
mVVIO Input offset voltage
V 0
TL032AC25°C 0.53 2.8 0.39 0.8
mV
VO = 0
TL032ACFull range 3.8 1.8
αVIO
Temperature coefficient ofinput offset voltage
VO = 0,VIC = 0,RS = 50 Ω
TL032C 25°C to70°C
11.5 10.8
µV/°CαVIO input offset voltage(see Note 5)
RS 50 Ω
TL032AC 25°C to70°C
11.5 10.8 25
µV/°C
Input offset voltage long-term drift (see Note 6)
25°C 0.04 0.04 µV/mo
IIO Input offset currentVO = 0, VIC = 0, 25°C 1 100 1 100
pAIIO Input offset currentVO 0, VIC 0,See Figure 5 70°C 9 200 12 200
pA
IIB Input bias currentVO = 0, VIC = 0, 25°C 2 200 2 200
pAIIB Input bias currentVO 0, VIC 0,See Figure 5 70°C 50 400 80 400
pA
VICRCommon-mode input
25°C–1.5
to4
–3.4to
5.4
–11.5to14
–13.4to
15.4VVICR
Common mode inputvoltage range
Full range–1.5
to4
–11.5to14
V
VMaximum positive peak
R 10 kΩ
25°C 3 4.3 13 14
VVOM+Maximum positive peakoutput voltage swing
RL = 10 kΩ 0°C 3 4.2 13 14 VOM+ output voltage swing L70°C 3 4.3 13 14
VMaximum negative peak
R 10 kΩ
25°C –3 –4.2 –12.5 –13.9
VVOM–Maximum negative peakoutput voltage swing
RL = 10 kΩ 0°C –3 –4.1 –12.5 –13.9 VOM output voltage swing L70°C –3 –4.2 –12.5 –14
ALarge signal differential R 10 kΩ
25°C 4 12 5 14.3
V/ VAVDLarge-signal differentialvoltage amplification
RL = 10 kΩ,See Note 7
0°C 3 11.1 4 13.5 V/mVVD voltage amplification See Note 770°C 4 13.3 5 15.2
ri Input resistance 25°C 1012 1012 Ω
ci Input capacitance 25°C 5 14 pF
CMRRCommon mode V V min
25°C 70 87 75 94
dBCMRRCommon-moderejection ratio
VIC = VICRmin,VO = 0, R S = 50 Ω 0°C 70 87 75 94 dB
rejection ratio VO = 0, RS = 50 Ω70°C 70 87 75 94
kSupply voltage rejection V ±5 V to ±15 V
25°C 75 96 75 96
dBkSVRSupply-voltage rejectionratio (∆VCC± /∆VIO)
VCC± = ±5 V to ±15 V,VO = 0, R S = 50 Ω 0°C 75 96 75 96 dBSVR ratio (∆VCC± /∆VIO) VO = 0, RS = 50 Ω
70°C 75 96 75 96† Full range is 0°C to 70°C.NOTES: 5. This parameter is tested on a sample basis for the TL032A. For other test requirements, please contact the factory. This statement
has no bearing on testing or nontesting of other parameters.6. Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.7. At VCC± = ±5 V, VO = 2.3 V; at VCC± = ±15 V, VO = ±10 V.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–5POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
electrical characteristics at specified free-air temperature (continued)
PARAMETER TEST CONDITIONS
TL032C, TL032AC
UNITPARAMETER TEST CONDITIONS TA VCC± = ± 5 V VCC± = ±15 V UNITAMIN TYP MAX MIN TYP MAX
PTotal power dissipation
V 0 N l d
25°C 3.8 5 13 17
WPDTotal power dissipation(two amplifiers)
VO = 0, No load 0°C 3.7 5 12.7 17 mWD (two amplifiers) O70°C 3.8 5 12.6 17
ICCSupply current
VO = 0 No load0°C 368 500 422 560
mAICCSupply current(two amplifiers)
VO = 0, No load70°C 378 500 420 560
mA
VO1/VO2 Crosstalk attenuation AVD = 100 dB 25°C 120 120 dB
operating characteristics at specified free-air temperature
PARAMETER TEST CONDITIONS T
TL032C, TL032AC
UNITPARAMETER TEST CONDITIONS TA VCC± = ±5 V VCC± = ±15 V UNIT
MIN TYP MAX MIN TYP MAX
SRPositive slew rate at unity
R 10 kΩ C 100 F
25°C 12 1.5 2.9
V/SR+Positive slew rate at unitygain
R 10 kΩ C 100 F
0°C 1.8 1 2.6 V/µsgain
RL = 10 kΩ, CL = 100 pF, 70°C 2.2 1.5 3.2
µ
SRNegative slew rate
RL 10 kΩ, CL 100 pF,See Figure 1 and Note 8 25°C 3.9 1.5 5.1
V/SR–Negative slew rateat unity gain
0°C 3.7 1.5 5 V/µsat unity gain
70°C 4 1.5 5
µ
Ri i
V 10 V
25°C 138 132
tr Rise time
V 10 V
0°C 134 127 nsr
V 10 V
70°C 150 142
F ll iVI(PP) = ±10 V, 25°C 138 132
tf Fall timeVI(PP) = ±10 V,RL = 10 kΩ, CL = 100 pF, 0°C 134 127 nsf L , L p ,See Figures 1 and 2 70°C 150 142
O h f
25°C 11% 5%
Overshoot factor 0°C 10% 4%
70°C 12% 6%
VE i l t i t TL032C
R 20 Ω
f = 10 Hz25°C
49 49
√Vn
Equivalent inputnoise voltage
TL032CRS = 20 Ω, f = 1 kHz
25°C41 41
nV/√HzVn noise voltage(see Note 9) TL032AC
RS 20 Ω,See Figure 3 f = 10 Hz
25°C49 49
nV/√Hz(see Note 9) TL032AC
f = 1 kHz25°C
41 41 60
InEquivalent input noise current
f = 1 kHz 25°C 0.003 0.003 pA/√Hz
B U i i b d id hV 10 mV R 10 kΩ
25°C 1 1.1
MHB1 Unity-gain bandwidthVI = 10 mV, RL = 10 kΩ,CL = 25 pF See Figure 4
0°C 1 1.1 MHz1 y gCL = 25 pF, See Figure 4
70°C 1 1
Ph i i iV 10 mV R 10 kΩ
25°C 61° 65°
φm Phase margin at unity gainVI = 10 mV, RL = 10 kΩ,CL = 25 pF See Figure 4
0°C 61° 65°φm g y gCL = 25 pF, See Figure 4
70°C 60° 64°NOTES: 8. For VCC± = ±5 V, VI(PP) = ±1 V; for VCC± = ±15 V, VI(PP) = ±5 V.
9. This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearingon testing or nontesting of other parameters.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
electrical characteristics at specified free-air temperature
PARAMETER TEST CONDITIONS †
TL032I, TL032AI
UNITPARAMETER TEST CONDITIONS TA† VCC± = ±5 V VCC± = ±15 V UNITAMIN TYP MAX MIN TYP MAX
V I ff l
V 0
TL032I25°C 0.69 3.5 0.57 1.5
VIO Input offset voltage
V 0
TL032IFull range 5.3 3.3
mVVIO Input offset voltage
V 0
TL032AI25°C 0.53 2.8 0.39 0.8
mV
VO = 0
TL032AIFull range 4.6 2.6
αVIO
Temperature coefficient ofinput offset voltage
VO = 0,VIC = 0,RS = 50 Ω
TL032I25°C to85°C 11.4 10.8
µV/°CαVIO input offset voltage(see Note 5)
RS 50 Ω
TL032AI25°C to85°C 11.4 10.8 25
µV/°C
Input offset voltage long-term drift (see Note 6)
25°C 0.04 0.04 µV/mo
IIO Input offset currentVO = 0, VIC = 0, 25°C 1 100 1 100 pA
IIO Input offset currentVO 0, VIC 0,See Figure 5 85°C 0.02 0.45 0.02 0.45 nA
IIB Input bias currentVO = 0, VIC = 0, 25°C 2 200 2 200 pA
IIB Input bias currentVO 0, VIC 0,See Figure 5 85°C 0.2 0.9 0.3 0.9 nA
VICRCommon-mode input
25°C–1.5
to4
–3.4to
5.4
–11.5to14
–13.4to
15.4VVICR
Common mode inputvoltage range
Full range–1.5
to4
–11.5to14
V
VMaximum positive peak
R 10 kΩ
25°C 3 4.3 13 14
VVOM+Maximum positive peakoutput voltage swing
RL = 10 kΩ –40°C 3 4.2 13 14 VOM+ output voltage swing L85°C 3 4.4 13 14
VMaximum negative peak
R 10 kΩ
25°C –3 –4.2 –12.5 –13.9
VVOM–Maximum negative peakoutput voltage swing
RL = 10 kΩ –40°C –3 –4.1 –12.5 –13.8 VOM output voltage swing L85°C –3 –4.2 –12.5 –14
AVD voltage amplificationRL = 10 kΩ, –40°C 3 8.4 4 11.6
V/mVAVD voltage amplificationRL 10 kΩ,See Note 7 85°C 4 13.5 5 15.3
V/mV
ri Input resistance 25°C 1012 1012 Ω
ci Input capacitance 25°C 5 4 pF
CMRRCommon mode V V min
25°C 70 87 75 94
dBCMRRCommon-moderejection ratio
VIC = VICRmin,VO = 0 RS = 50 Ω
–40°C 70 87 75 94 dBrejection ratio VO = 0, RS = 50 Ω
85°C 70 87 75 94
kSupply voltage rejection V ±5 V to ±15 V
25°C 75 96 75 96
dBkSVRSupply-voltage rejectionratio (∆VCC± /∆VIO)
VCC± = ±5 V to ±15 V,VO = 0 RS = 50 Ω
–40°C 75 96 75 96 dBSVR ratio (∆VCC± /∆VIO) VO = 0, RS = 50 Ω85°C 75 96 75 96
† Full range is –40°C to 85°C.NOTES: 5. This parameter is tested on a sample basis for the TL032A. For other test requirements, please contact the factory. This statement
has no bearing on testing or nontesting of other parameters.6. Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.7. At VCC± = ±5 V, VO = 2.3 V; at VCC± = ±15 V, VO = ±10 V.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
electrical characteristics at specified free-air temperature (continued)
PARAMETER TEST CONDITIONS
TL032I, TL032AI
UNITPARAMETER TEST CONDITIONS TA VCC± = ±5 V VCC± = ±15 V UNITAMIN TYP MAX MIN TYP MAX
PTotal power dissipation
V 0 N l d
25°C 3.8 5 13 17
WPDTotal power dissipation(two amplifiers)
VO = 0, No load –40°C 2.9 5 10.9 17 mWD (two amplifiers) O85°C 3.7 5 12.4 17
ISupply current
V 0 N l d
25°C 384 500 434 560
AICCSupply current (two amplifiers)
VO = 0, No load –40°C 288 500 362 560 µACC (two amplifiers) O85°C 372 500 414 560
µ
VO1/VO2 Crosstalk attenuation AVD = 100 dB 25°C 120 120 dB
operating characteristics at specified free-air temperature
PARAMETER TEST CONDITIONS T
TL032I, TL032AI
UNITPARAMETER TEST CONDITIONS TA VCC± = ±5 V VCC± = ±15 V UNITAMIN TYP MAX MIN TYP MAX
SRPositive slew rate at
R 10 kΩ C 100 F
25°C 2 1.5 2.9
V/SR+Positive slew rate atunity gain
R 10 kΩ C 100 F
–40°C 1.6 1 2.1 V/µsunity gain
RL = 10 kΩ, CL = 100 pF, 85°C 2.3 1.5 3.3
µ
SRNegative slew rate at
RL 10 kΩ, CL 100 pF,See Figure 1 and Note 8 25°C 3.9 1.5 5.1
V/SR–Negative slew rate atunity gain
–40°C 3.3 1.5 4.8 V/µsunity gain
85°C 4.1 1.5 4.9
µ
Ri i
V 10 V
25°C 138 132
tr Rise time
V 10 V
–40°C 132 123 nsr
V 10 V
85°C 154 146
F ll iVI(PP) = ±10 V, 25°C 138 132
tf Fall timeVI(PP) = ±10 V,RL = 10 kΩ, CL = 100 pF,S Fi 1 d 2
–40°C 132 123 nsf L LSee Figures 1 and 2 85°C 154 146
O h f
25°C 11% 5%
Overshoot factor –40°C 12% 5%
85°C 13% 7%
VE i l t i t TL032I
R 20 Ω
f = 10 Hz25°C
49 49
Vn
Equivalent inputnoise voltage
TL032IRS = 20 Ω, f = 1 kHz
25°C41 41
nV/√HzVn noise voltage(see Note 9) TL032AI
RS 20 Ω,See Figure 3 f = 10 Hz
25°C49 49
nV/√Hz(see Note 9) TL032AI
f = 1 kHz25°C
41 41 60
In Equivalent input noise current f = 1 kHz 25°C 0.003 0.003 pA/√Hz
B U i i b d id hV 10 mV R 10 kΩ
25°C 1 1.1
MHB1 Unity-gain bandwidthVI = 10 mV, RL = 10 kΩ,CL = 25 pF See Figure 4
–40°C 1 1.1 MHz1 y gCL = 25 pF, See Figure 4
85°C 0.9 1
Ph i i iV 10 mV R 10 kΩ
25°C 61° 65°
φm Phase margin at unity gainVI = 10 mV, RL = 10 kΩ,CL = 25 pF See Figure 4
–40°C 61° 65°φm g y gCL = 25 pF, See Figure 4
85°C 60° 64°NOTES: 8. For VCC± = ±5 V, VI(PP) = ±1 V; for VCC± = ±15 V, VI(PP) = ±5 V.
9. This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearingon testing or nontesting of other parameters.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
electrical characteristics at specified free-air temperature
PARAMETER TEST CONDITIONS †
TL032M, TL032AM
UNITPARAMETER TEST CONDITIONS TA† VCC± = ±5 V VCC± = ±15 V UNITAMIN TYP MAX MIN TYP MAX
V I ff l
V 0
TL032M25°C 0.69 3.5 0.57 1.5
VIO Input offset voltage
V 0
TL032MFull range 6.5 4.5
mVVIO Input offset voltage
V 0
TL032AM25°C 0.53 2.8 0.39 0.8
mV
VO = 0
TL032AMFull range 5.8 3.8
αVIOTemperature coefficient of
VO = 0,VIC = 0,RS = 50 Ω
TL032M25°C to125°C 9.7 9.7
µV/°CαVIOTemperature coefficient ofinput offset voltage
RS 50 Ω
TL032AM25°C to125°C 9.7 9.7
µV/°C
Input offset voltage long-term drift (see Note 6)
25°C 0.04 0.04 µV/mo
IIO Input offset currentVO = 0, VIC = 0, 25°C 1 100 1 100 pA
IIO Input offset currentVO 0, VIC 0,See Figure 5 125°C 0.2 10 0.2 10 nA
IIB Input bias currentVO = 0, VIC = 0, 25°C 2 200 2 200 pA
IIB Input bias currentVO 0, VIC 0,See Figure 5 125°C 7 20 8 20 nA
VICRCommon-mode input
25°C–1.5
to4
–3.4to
5.4
–11.5to14
–13.4to
15.4VVICR
Common mode inputvoltage range
Full range–1.5
to4
–11.5to14
V
VMaximum positive peak
R 10 kΩ
25°C 3 4.3 13 14
VVOM+Maximum positive peakoutput voltage swing
RL = 10 kΩ –55°C 3 4.1 13 14 VOM+ output voltage swing L125°C 3 4.4 13 14
VMaximum negative peak
R 10 kΩ
25°C –3 –4.2 –12.5 –13.9
VVOM–Maximum negative peakoutput voltage swing
RL = 10 kΩ –55°C –3 –4 –12.5 –13.8 VOM output voltage swing L125°C –3 –4.3 –12.5 –14
ALarge signal differential R 10 kΩ
25°C 4 12 5 14.3
V/ VAVDLarge-signal differentialvoltage amplification
RL = 10 kΩ,See Note 7
–55°C 3 7.1 4 10.4 V/mVVD voltage amplification See Note 7125°C 3 12.9 4 15
ri Input resistance 25°C 1012 1012 Ω
ci Input capacitance 25°C 5 4 pF
CMRRCommon mode V V min
25°C 70 87 75 94
dBCMRRCommon-moderejection ratio
VIC = VICRmin,VO = 0 RS = 50 Ω
–55°C 70 87 70 94 dBrejection ratio VO = 0, RS = 50 Ω
125°C 70 87 70 94
kSupply voltage rejection V ±5 V to ±15 V
25°C 75 96 75 96
dBkSVRSupply-voltage rejectionratio (∆VCC± /∆VIO)
VCC± = ±5 V to ±15 V,VO = 0 RS = 50 Ω
–55°C 75 95 75 95 dBSVR ratio (∆VCC± /∆VIO) VO = 0, RS = 50 Ω125°C 75 96 75 96
† Full range is –55°C to 125°C.NOTES: 6. Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.7. At VCC± = ±5 V, VO = 2.3 V; at VCC± = ±15 V, VO = ±10 V.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–9POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
electrical characteristics at specified free-air temperature (continued)
PARAMETER TEST CONDITIONS
TL032M, TL032AM
UNITPARAMETER TEST CONDITIONS TA VCC± = ±5 V VCC± = ±15 V UNITAMIN TYP MAX MIN TYP MAX
PTotal power dissipation
V 0 N l d
25°C 3.8 5 13 17
WPDTotal power dissipation(two amplifiers)
VO = 0, No load –55°C 2.3 5 9.4 17 mWD (two amplifiers) O125°C 3.6 5 11.8 17
ISupply current
V 0 N l d
25°C 384 500 434 560
AICCSupply current (two amplifiers)
VO = 0, No load –55°C 228 500 312 560 µACC (two amplifiers) O125°C 356 500 394 560
µ
VO1/VO2 Crosstalk attenuation AVD = 100 dB 25°C 120 120 dB
operating characteristics at specified free-air temperature
PARAMETER TEST CONDITIONS T
TL032M, TL032AM
UNITPARAMETER TEST CONDITIONS TA VCC± = ±5 V VCC± = ±15 V UNITAMIN TYP MAX MIN TYP MAX
SRPositive slew rate
R 10 kΩ
25°C 2 1.5 2.9
V/SR+Positive slew rateat unity gain R 10 kΩ
–55°C 1.4 1 1.9 V/µsat unity gain RL = 10 kΩ,
CL = 100 pF125°C 2.4 1 3.5
µ
SRNegative slew rate
CL = 100 pF,See Note 8 and Figure 1 25°C 3.9 1.5 5.1
V/SR–Negative slew rateat unity gain
See Note 8 and Figure 1–55°C 3.2 1 4.6 V/µs
at unity gain125°C 4.1 1 4.7
µ
Ri i
V 10 V
25°C 138 132
tr Rise time
V 10 V
–55°C 142 123 nsr
V 10 V125°C 166 58
F ll i
VI(PP) = ±10 V,R 10 kΩ
25°C 138 132
tf Fall time
( )RL = 10 kΩ,CL = 100 pF,
–55°C 142 123 nsf CL = 100 pF,See Figures 1 and 2 125°C 166 158
O h f
See Figures 1 and 225°C 11% 5%
Overshoot factor –55°C 16% 6%
125°C 14% 8%
VE i l i
TL032MR 20 Ω
f = 10 Hz25°C
49 49
√VnEquivalent input
TL032MRS = 20 Ω, f = 1 kHz
25°C41 41
nV/√HzVnEquivalent inputnoise voltage
TL032AM
RS 20 Ω,See Figure 3 f = 10 Hz
25°C49 49
nV/√Hz
TL032AMf = 1 kHz
25°C41 41
InEquivalent input noisecurrent
f = 1 kHz 25°C 0.003 0.003 pA/√Hz
B1 U i i b d id hV 10 mV R 10 kΩ
25°C 1 1.1
MHB1 Unity-gain bandwidthVI = 10 mV, RL = 10 kΩ,CL = 25 pF See Figure 4
–55°C 1 1.1 MHzy gCL = 25 pF, See Figure 4
125°C 0.9 0.9
Ph i i iV 10 mV R 10 kΩ
25°C 61° 65°
φm Phase margin at unity gainVI = 10 mV, RL = 10 kΩ,CL = 25 pF See Figure 4
–55°C 57° 64°φm g y gCL = 25 pF, See Figure 4
125°C 59° 62°NOTE: 8. For VCC± = ±5 V, VI(PP) = ±1 V; for VCC± = ±15 V, VI(PP) = ±5 V.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
PARAMETER MEASUREMENT INFORMATION
VI
+
–
VCC+
VCC–
VO
CL(see Note A)
Overshoot
10%
90%
tr
RL
NOTE A: CL includes fixture capacitance.
Figure 1. Slew Rate, Rise/Fall Time,and Overshoot Test Circuit
Figure 2. Rise TIme and OvershootWaveform
(see Note A)
VCC–
VCC+
+
–
VO
CL
VO
VCC–
VCC+
+
–
RS RS
10 kΩ
RL
VI
10 kΩ
100 Ω
NOTE A: CL includes fixture capacitance.Figure 3. Noise-Voltage Test Circuit
Figure 4. Unity-Gain Bandwidth and Phase-Margin Test Circuit
+
–
VCC+
VCC–
Picoammeters
Ground Shield
Figure 5. Input-Bias and Offset-Current Test Circuit
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
typical values
Typical values as presented in this data sheet represent the median (50% point) of device parametricperformance.
input bias and offset current
At the picoamp bias-current level typical of the TL032 and TL032A, accurate measurement of the bias currentbecomes difficult. Not only does this measurement require a picoammeter, but test socket leakages can easilyexceed the actual device bias currents. To accurately measure these small currents, Texas Instruments usesa two step process. The socket leakage is measured using picoammeters with bias voltages applied but withno device in the socket. The device is then inserted into the socket and a second test that measures both thesocket leakage and the device input bias current is performed. The two measurements are then subtractedalgebraically to determine the bias current of the device.
noise
Because of the increasing emphasis on low noise levels in many of today’s applications, the input noise voltagedensity is sample tested at f = 1 kHz. Texas Instruments also has additional noise testing capability to meetspecific application requirements. Please contact the factory for details.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VIO Input offset voltage Distribution 6
αVIO Input offset voltage temperature coefficient Distribution 7
IIO Input offset current vs Free-air temperature 8
IIB Input bias currentvs Free-air temperaturevs Common-mode input voltage
89
VIC Common-mode input voltage rangevs Supply voltagevs Free-air temperature
1011
VO Output voltage vs Differential input voltage 12, 13
VOM Maximum peak output voltagevs Supply voltagevs Output currentvs Free-air temperature
1416, 1718, 19
VO(PP) Maximum peak-to-peak output voltage vs Frequency 15
AVD Large-signal differential voltage amplificationvs Load resistancevs Frequencyvs Free-air temperature
202122
zo Output impedance vs Frequency 23
CMRR Common-mode rejection ratiovs Frequencyvs Free-air temperature
24, 2526
kSVR Supply-voltage rejection ratio vs Free-air temperature 27
IOS Short-circuit output currentvs Supply voltagevs Timevs Free-air temperature
282930
Vn Equivalent input noise voltage vs Frequency 31
ICC Supply currentvs Supply voltagevs Free-air temperature
3233
SR Slew ratevs Load resistancevs Free-air temperature
34, 3536, 37
Overshoot factor vs Load capacitance 38
THD Total harmonic distortion vs Frequency 39
B1 Unity-gain bandwidthvs Supply voltagevs Free-air temperature
4041
φm Phase marginvs Supply voltagevs Load capacitancevs Free-air temperature
424344
Pulse responseSmall signal Large signal
4546, 47
Phase shift vs Frequency 21
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–13POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS †
–1.20
Per
cent
age
of A
mpl
ifica
tion
– %
VIO – Input Offset Voltage – mV
12
–0.6 0 0.6 1.2
3
6
9
–400
Per
cent
age
of A
mpl
ifier
s –
%αVIO – Temperature Coefficient – µV/°C
40
30
5
10
15
20
25
–30 –20 –10 0 10 20 30
DISTRIBUTION OF TL032INPUT OFFSET VOLTAGE
DISTRIBUTION OF TL032INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
TA = 25°CÎÎÎÎÎÎÎÎÎÎ
P Package
ÎÎÎÎÎÎÎÎÎÎ
VCC± = ±15 VÎÎÎÎÎÎÎÎÎÎÎÎÎ1681 Amplifiers Tested From 1 Wafer Lot
P Package
VCC± = ±15 VÎÎÎÎÎÎÎÎÎÎÎÎ160 Amplifiers Tested From 2 Wafer Lots
ÎÎÎÎÎÎÎÎÎÎÎÎ
TA = 25°C to 125°C
Figure 6 Figure 7
0.001
ÎÎÎÎ
IIO
25TA – Free-Air Temperature – °C
0.01
0.1
1
10
45 65 85 105 125–10
–15
IIB –
Inpu
t Bia
s C
urre
nt –
nA
VIC – Common-Mode Input Voltage – V
–5
0
5
10
–10 –5 0 5 10 15
TA = 25°CVCC± = ±15 V
INPUT BIAS CURRENT ANDINPUT OFFSET CURRENT
vsFREE-AIR TEMPERATURE
INPUT BIAS CURRENTvs
COMMON-MODE INPUT VOLTAGE
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VCC± = ±15 VVO = 0VIC = 0
IBI
ÎÎIIB
IIB a
nd II
O –
Inpu
t Bia
s an
d In
put O
ffset
Cur
rent
s –
nAIBI
I IO
Figure 8 Figure 9
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS †
–160
VIC
– C
omm
on-M
ode
Inpu
t Vol
tage
– V
|VCC± | – Supply Voltage – V
–12
–8
–4
0
4
8
12
16
2 4 6 8 10 12 14 16 1251007550250–25–50
20
15
10
5
0
–5
–10
–15
TA – Free-Air Temperature – °C–75
–20
TA = 25°C
ÎÎÎÎÎÎÎÎÎÎ
Positive Limit
ÎÎÎÎÎÎÎÎÎÎ
Negative Limit
VCC± = ±15 V
ÎÎÎÎÎÎÎÎÎÎ
Positive Limit
ÎÎÎÎÎÎÎÎÎÎ
Negative Limit
COMMON-MODEINPUT VOLTAGE RANGE LIMITS
vsSUPPLY VOLTAGE
COMMON-MODEINPUT VOLTAGE RANGE LIMITS
vsFREE-AIR TEMPERATURE
ÁÁÁÁV
IC
VIC
– C
omm
on-M
ode
Inpu
t Vol
tage
– V
ÁÁÁÁV
IC
Figure 10 Figure 11
–1.5–5
–1
0
0.5
1
1.5
–4 –3 –2 –1 0 1 2 3 4 5–1.5
–15
–1
–0.5
0
0.5
1
–10 –5 0 5 10
1.5
OUTPUT VOLTAGEvs
DIFFERENTIAL INPUT VOLTAGE
OUTPUT VOLTAGEvs
DIFFERENTIAL INPUT VOLTAGE
–0.5
15ÈÈÈÈRL = 5 kΩÈÈÈÈÈÈÈÈ
RL = 10 kΩ
ÈÈÈÈÈÈÈÈ
RL = 20 kΩÈÈÈÈRL = 50 kΩ
ÈÈÈÈÈÈÈÈ
RL = 5 kΩ
ÈÈÈÈRL = 10 kΩ
ÈÈÈÈRL = 20 kΩÈÈÈÈÈÈÈÈ
RL = 50 kΩ
ÎÎÎÎÎÎÎÎ
RL = 1 kΩÎÎÎÎÎÎÎÎ
RL = 2 kΩ
ÎÎÎÎRL = 5 kΩ
ÎÎÎÎRL = 10 kΩÎÎÎÎÎÎÎÎ
RL = 20 kΩ
VCC± = ± 5 VTA = 25°C
TA = 25°CVCC± = ±15 V
ÎÎÎÎÎÎ
RL = 1 kΩ
ÎÎÎÎÎÎ
RL = 2 kΩÎÎÎÎRL = 5 kΩ
ÎÎÎÎÎÎÎÎ
RL = 20 kΩ
ÎÎÎÎÎRL = 10 kΩ
– O
utpu
t Vol
tage
– V
VO
VID – Differential Input Voltage – VVID – Differential Input Voltage – V
– O
utpu
t Vol
tage
– V
VO
Figure 12 Figure 13
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS †
–160
VO
M –
Max
imum
Pea
k O
utpu
t Vol
tage
– V
|VCC± | – Supply Voltage – V
–8
–4
0
4
8
12
16
2 4 6 8 10 12 14 1601 k
VO
PP
– M
axim
um P
eak-
to-P
eak
Out
put V
olta
ge –
V
f – Frequency – Hz
5
10
15
20
25
30
10 k 100 k 1 M
TA = 25°CRL = 10 kΩ
ÎÎÎVOM–
VOM+
RL = 10 kΩ
TA = 125 °C
VCC± = ±15 V
TA = –55 °C
VCC± = ±5 V
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs
FREQUENCY
MAXIMUM PEAK OUTPUT VOLTAGEvs
SUPPLY VOLTAGE
ÁÁÁÁV
OM
–12ÁÁÁÁÁÁÁÁÁ
V O(P
P)
F i gu re 14 F igure 15
|VO
M|
– M
ax
imu
m P
ea
k O
utp
ut
Vo
lta
ge
– V
00
00
| IO | – Outpu t Cur ren t – mA
1
2
3
4
5
5 10 15 20 5 10 15 20 25 30
2
4
6
8
10
12
14
16
VOM+
VOM–
VCC± = ±5 VTA = 25°C
ÎÎÎÎÎÎ
VOM+
VCC± = ±15 VTA = 25°C
MAXIMUM PEAK OUTPUT VOLTAGEvs
OUTPUT CURRENT
MAXIMUM PEAK OUTPUT VOLTAGEvs
OUTPUT CURRENT
ÁÁÁÁÁÁ
V OM
|VO
M| –
Max
imum
Pea
k O
utpu
t Vol
tage
– V
ÁÁÁÁÁÁÁÁÁ
V OM
| IO | – Output Current – mA
ÎÎÎÎVOM–
Figure 16 Figure 17
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS †
–5–75
VO
M –
Max
imum
Pea
k O
utpu
t Vol
tage
– V
TA – Free-Air Temperature – °C
–16
TA – Free-Air Temperature – °C
–4
–3
–2
–1
0
1
2
3
4
5
–50 –25 0 25 50 75 100 125 –75 –50 –25 0 25 50 75 100 125
–8
–4
0
4
8
12
16
VOM+
VOM–
VOM +
VOM–
MAXIMUM PEAK OUTPUT VOLTAGEvs
FREE-AIR TEMPERATURE
MAXIMUM PEAK OUTPUT VOLTAGEvs
FREE-AIR TEMPERATURE
ÁÁÁÁ
V OM
VO
M –
Max
imum
Pea
k O
utpu
t Vol
tage
– V
ÁÁÁÁ
V OM
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VCC± = ±5 VRL = 10 kΩ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VCC± = ±15 VRL = 10 kΩ
–12
Figure 18 Figure 19
0.110
f – Frequency – Hz
0
RL – Load Resistance – Ω
105
104
103
102
10
15
10
15
20
25
30
35
40
10 k 100 k 1 M 100 1 k 10 k 100 k 1 M 10 M
0°
30°
60°
90°
120°
150°
180°
Pha
se S
hift
VCC± = ±15 V
VCC± = ±5 V
ÎÎÎÎAVD
Phase Shift
VCC± = ±15 V
RL = 10 kΩCL = 25 pF
TA = 25°C
LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION
vsLOAD RESISTANCE
LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT
vsFREQUENCY
ÁÁÁÁÁÁÁÁ
TA = 25°CVO = ±1 V
AV
D –
Lar
ge-S
igna
l Diff
eren
tial
ÁÁÁÁÁÁ
AV
D Volta
ge A
mpl
ifica
tion
– V
/mV
AV
D –
Lar
ge-S
igna
l Diff
eren
tial
ÁÁÁÁÁÁ
AV
D Volta
ge A
mpl
ifica
tion
– V
/mV
Figure 20 Figure 21
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS †
–751
TA – Free-Air Temperature – °C125
50
– 50 – 25 0 25 50 75 100 1 k10
zo –
Out
put I
mpe
denc
e –
f – Frequency – Hz100 k
200
10
10 k
20
40
60
80
100
AVD = 100
AVD = 10
AVD = 1
VCC± = ±15 Vro (open loop) ≈ 250 Ω
VCC± = ±15 V
ÎÎÎÎÎÎÎÎÎÎRL = 10 kΩ
VCC± = ±5 V
LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION
vsFREE-AIR TEMPERATURE
OUTPUT IMPEDANCEvs
FREQUENCY
ÁÁ
ΩÎÎÎÎ
TA = 25°C
ÁÁÁÁ
z o
AV
D –
Lar
ge-S
igna
l Diff
eren
tial
ÁÁÁÁÁÁ
AV
DVo
ltage
Am
plifi
catio
n –
V/m
V
Figure 22 Figure 23
100
CM
RR
– C
omm
on-M
ode
Rej
ectio
n R
atio
– d
B
f – Frequency – Hz10 M
100
100 1 k 10 k 100 k 1 M
10
20
30
40
50
60
70
80
90
100
f – Frequency – Hz10 M
100
100 1 k 10 k 100 k 1 M
10
20
30
40
50
60
70
80
90
VCC± = ±5 V
ÎÎÎÎTA = 25°C ÎÎÎÎÎTA = 25°CVCC± = ±15 V
COMMON-MODE REJECTION RATIOvs
FREQUENCY
COMMON-MODE REJECTION RATIOvs
FREQUENCY
CM
RR
– C
omm
on-M
ode
Rej
ectio
n R
atio
– d
B
Figure 24 Figure 25
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS †
–7575
CM
RR
– C
omm
on-M
ode
Rej
ectio
n R
atio
– d
B
TA – Free-Air Temperature – °C125
95
–50 –25 0 25 50 75 100
80
85
90
–7590
kSV
R –
Sup
ply-
Vol
tage
Rej
ectio
n R
atio
– d
B
TA – Free-Air Temperature – °C125
100
–50 –25 0 25 50 75 100
92
94
96
98
VCC± = ±15 V
VCC± = ±5 V
VCC± = ±5 V to ±15 V
COMMON-MODE REJECTION RATIOvs
FREE-AIR TEMPERATURE
SUPPLY-VOLTAGE REJECTION RATIOvs
FREE-AIR TEMPERATURE
SV
Rk
ÁÁÁÁÁÁÁÁÁÁÁÁ
VIC = VICR min
Figure 26 Figure 27
0–30
IOS
– S
hort
-Circ
uit O
utpu
t Cur
rent
– m
A
|VCC± | – Supply Voltage – V16
30
2 4 6 8 10 12 14
–20
–10
0
10
20
0–20
t – Time – s30
30
5 10 15 20 25
–10
0
10
20
VO = 0TA = 25°C
VID = 100 mV
VID = –100 mV
VID = –100 mV
VID = 100 mV
SHORT-CIRCUIT OUTPUT CURRENTvs
SUPPLY VOLAGE
SHORT-CIRCUIT OUTPUT CURRENTvs
TIME
ÁÁÁÁÁÁ
OS
I IOS
– S
hort
-Circ
uit O
utpu
t Cur
rent
– m
A
ÁÁÁÁÁÁ
OS
I ÁÁÁÁÁÁÁÁÁÁÁÁ
VCC± = ±15 VTA = 25°C
Figure 28 Figure 29
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–19POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS †
VO = 0
–75–25
IOS
– S
hort
-Circ
uit O
utpu
t Cur
rent
– m
A
TA – Free-Air Temperature – °C125
25
–50 –25 0 25 50 75 100
–20
–15
–10
–5
0
5
10
15
20
1030
Vn
– E
quiv
alen
t Inp
ut N
oise
Vol
tage
– n
VH
zf – Frequency – Hz
100 k
60VCC± = ±15 V
VCC± = ±5 V
VCC± = ±5 V
VCC± = ±15 V
50
40
100 1 k 10 k
SHORT-CIRCUIT OUTPUT CURRENTvs
FREE-AIR TEMPERATURE
EQUIVALENT INPUT NOISE VOLTAGEvs
FREQUENCY
ÁÁÁÁÁÁ
OS
I
Vn
ÁÁÁÁÁÁÁÁ
nV/
Hz ÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁ
VCC± = ±15 VRS = 20ΩTA = 25°CSee Figure 3
Figure 30 Figure 31
00
ICC
– S
uppl
y C
urre
nt –
A
|VCC± | – Supply Voltage – V16
500
2 4 6 8 10 12 14
100
200
300
400
–750
TA – Free-Air Temperature – °C125
500
–50 –25 0 25 50 75 100
100
200
300
400
TA = 25°C
TA = 125°C
TA = –55°C
VCC± = ±15 V
VCC± = ±5 V
SUPPLY CURRENTvs
SUPPLY VOLTAGE
SUPPLY CURRENTvs
FREE-AIR TEMPERATURE
ÁÁÁÁ
CC
IA
µ
ICC
– S
uppl
y C
urre
nt –
A
ÁÁÁÁ
CC
IA
µ
ÁÁÁÁÁÁÁÁÁÁÁÁ
VO = 0No Load
ÁÁÁÁÁÁÁÁÁÁÁÁ
VO = 0No Load
Figure 32 Figure 33
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–20 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS †
10
RL – Load Resistance – k Ω100
6
1
2
3
4
5
10 10
5
4
3
2
1
6
100RL – Load Resistance – k Ω
01
SR+
SR–
SR–
SR+
SLEW RATEvs
LOAD RESISTANCE
SLEW RATEvs
LOAD RESISTANCE
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VCC± = ±5 VCL = 100 pFTA = 25°CSee Figure 1
SR
– S
lew
Rat
e –
V/s
sµ
SR
– S
lew
Rat
e –
V/s
sµ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSee Figure 1
TA = 25°CCL = 100 pF
VCC± = ±15 V
Figure 34 Figure 35
–750
TA – Free-Air Temperature – °C125
6
–50 –25 0 25 50 75 100
1
2
3
4
5
–750
TA – Free-Air Temperature – °C125
6
–50 –25 0 25 50 75 100
1
2
3
4
5
SR–
SR+
SR–
SR+
SLEW RATEvs
FREE-AIR TEMPERATURE
SLEW RATEvs
FREE-AIR TEMPERATURE
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
See Figure 1
RL = 10 kΩCL = 100 pF
VCC± = ±5 V
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VCC± = ±15 V
CL = 100 pFRL = 10 kΩ
See Figure 1
SR
– S
lew
Rat
e –
V/s
sµ
SR
– S
lew
Rat
e –
V/s
sµ
Figure 36 Figure 37
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–21POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS †
00
Ove
rsho
ot F
acto
r –
%
CL – Load Capacitance – pF250
60
50 100 150 200
10
20
30
40
50
1000.1
TH
D –
Tot
al H
arm
onic
Dis
tort
ion
– %
f – Frequency – Hz100 k
0.5
0.2
0.3
0.4
VI(PP) = ±10 mVRL = 10 kΩTA = 25°CSee Figure 1
VCC± = ±5 V
VCC± = ±15 V
1 k 10 k
VCC± = ±15 VAVD = 1VO(rms) = 6 VTA = 25°C
OVERSHOOT FACTORvs
LOAD CAPACITANCE
TOTAL HARMONIC DISTORTIONvs
FREQUENCY
Figure 38 Figure 39
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
00.9
B1
– U
nity
-Gai
n B
andw
idth
– M
Hz
|VCC± | – Supply Voltage – V16
1.1
2 4 6 8 10 12 14
0.95
1
1.05
–750.8
TA – Free-Air Temperature – °C125
1.3
–50 –25 0 25 50 75 100
0.9
1
1.1
1.2
VCC± = ±15 V
VCC± = ±5 V
VI = 10 mVRL = 10 kΩCL = 25 pFSee Figure 4
UNITY-GAIN BANDWIDTHvs
SUPPLY VOLTAGE
UNITY-GAIN BANDWIDTHvs
FREE-AIR TEMPERATURE
VI = 10 mVRL = 10 kΩCL = 25 pFTA = 25°CSee Figure 4
B1
B1
– U
nity
-Gai
n B
andw
idth
– M
Hz
B1
Figure 40 Figure 41
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–22 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS †
057°
m –
Pha
se M
argi
n
| VCC± | – Supply Voltage – V
16
65°
2 4 6 8 10 12 14
59°
61°
63°
050°
CL – Load Capacitance – pF
100
70°
10 20 30 40 50 60 70 80 90
52°
54°
56°
58°
60°
62°
64°
66°
68°
PHASE MARGINvs
SUPPLY VOLTAGE
PHASE MARGINvs
LOAD CAPACITANCE
ÁÁÁÁ
φ m m –
Pha
se M
argi
n
ÁÁÁÁ
φ m
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VI = 10 mVRL = 10 kΩCL = 25 pF
See Figure 4
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VI = 10 mVRL = 10 kΩTA = 25°CSee Figure 4
m –
Pha
se M
argi
n
ÁÁÁÁ
φ m
TA = 25°C
ÎÎÎÎÎÎÎÎÎÎ
VCC± = ±5 V
NOTE A: Values of phase margin below a load capacitance of 25 pFwere estimated.
Figure 42
Figure 43
ÎÎÎÎÎÎÎÎ
and Note A
ÎÎÎÎÎÎÎÎÎÎVCC± = ±15 V
–16
VO
– O
utpu
t Vol
tage
– m
V
t – Time – µs1.4
16
0 0.2 0.4 0.6 0.8 1.0 1.2
–12
–8
–4
0
4
8
12
–7555°
TA – Free-Air Temperature – °C125
67°
–50 –25 0 25 50 75 100
57°
59°
61°
63°
65°
VCC± = ±5 V
VCC± = ±15 V
PHASE MARGINvs
FREE-AIR TEMPERATURE
VOLTAGE-FOLLOWERSMALL-SIGNAL
PULSE RESPONSE
m –
Pha
se M
argi
n
ÁÁÁÁ
mφ
ÁÁÁÁ
VOÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSee Figure 4
CL = 25 pFRL = 10 kΩVI = 10 mV
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VCC± = ±15 VRL = 10 kΩCL = 100 pF
See Figure 1TA = 25°C
Figure 44 Figure 45
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–23POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
TYPICAL CHARACTERISTICS
0
–6
–2
2
4
6
–2
VO
– O
utpu
t Vol
tage
– V
t – Time – µs8
2
0 1 2 3 4 5 6 7
0
1
0
–4
8
–8161412108642 18
t – Time – µs
VOLTAGE-FOLLOWERLARGE-SIGNAL
PULSE RESPONSE
VOLTAGE-FOLLOWERLARGE-SIGNAL
PULSE RESPONSE
ÁÁÁÁ
VO
VO
– O
utpu
t Vol
tage
– V
ÁÁÁÁ
VO
VCC± = ±5 VRL = 10 kΩCL = 100 pFTA = 25 °CSee Figure 1 See Figure 1
TA = 25 °CCL = 100 pFRL = 10 kΩVCC± = ±15 V
–1
Figure 46 Figure 47
APPLICATION INFORMATION
input characteristics
The TL032 and TL032A are specified with a minimum and a maximum input voltage that, if exceeded at eitherinput, could cause the device to malfunction. Because of the extremely high input impedance and resulting lowbias current requirements, the TL032 and TL032A are well suited for low-level signal processing; however,leakage currents on printed circuit boards and sockets can easily exceed bias current requirements and causedegradation in system performance. It is a good practice to include guard rings around inputs (see Figure 48).These guards should be driven from a low-impedance source at the same voltage level as the common-modeinput.
Unused amplifiers should be connected as grounded unity-gain followers to avoid possible oscillation.
(c) UNITY-GAIN AMPLIFIER(b) INVERTING AMPLIFIER(a) NONINVERTING AMPLIFIER
VOVI
–
+
VIVO
VOVI
–
+
–
+
Figure 48. Use of Guard Rings
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–24 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
APPLICATION INFORMATION
output characteristics
All operating characteristics (except bandwidth and phase margin) are specified with 100-pF load capacitance.The TL032 and TL032A will drive higher capacitive loads; however, as the load capacitance increases, theresulting response pole occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation. Thevalue of the load capacitance at which oscillation occurs varies with production lots. If an application appearsto be sensitive to oscillation due to load capacitance, adding a small resistance in series with the load shouldalleviate the problem (see Figure 50). Capacitive loads of 1000 pF and larger may be driven if enough resistanceis added in series with the output (see Figure 49).
(a) CL = 100 pF, R = 0 (b) CL = 300 pF, R = 0 (c) CL = 350 pF, R = 0
(d) CL = 1000 pF, R = 0 (e) CL = 1000 pF, R = 50 Ω (f) CL = 1000 pF, R = 2 kΩ
Figure 49. Effect of Capacitive Loads
RVO
10 kΩ(see Note A)
CL
– 15 V
15 V
–5 V
5 V
–
+
NOTE A: CL includes fixture capacitance.
Figure 50. Test Circuit for Output Characteristics
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–25POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
APPLICATION INFORMATION
high-Q notch filter
In general, Texas Instruments enhanced JFET operational amplifiers serve as excellent filters. This circuitprovides a narrow notch at a specific frequency. Notch filters are designed to eliminate frequencies that areinterfering with the operation of an application. For this filter, the center frequency can be calculated as:
fO 12R1C1
With the resistors and capacitors shown in Figure 51, the center frequency is 1 kHz. C1 = C3 = C2 + 2 and R1 = R3 = 2 x R2. The center frequency can be modified by varying these values. When adjusting the centerfrequency, be sure that the operational amplifier still has sufficient gain at the frequency required.
0.2– 8
Gai
n –
dB
f – Frequency – kHz2
2
0.4 0.6 0.8 1 0.2 0.4 0.6 0.8
– 7
– 6
– 5
– 4
– 3
– 2
– 1
0
1
–
+R1 R3
1.5 MΩ
C2220 pF
R2750 kΩ
C1 C3
110 pF 110 pF
1.5 MΩ
+15 V
–15 V
TL032
VOVI
Figure 51. High-Q Notch Filter
2-wire 4-mA to 20-mA current loop
Often information from an analog sensor must be sent over a distance to the receiving circuitry. For manyapplications, the most feasible method involves converting voltage information to a current before transmission.The following circuit benefits from the high input impedance of the TL032A since many inexpensive sensors donot have low output impedance.
Assuming that the voltage at the TL032A’s noninverting input is zero, the following equation determines theoutput current:
IO VI R3R1 x RS
5 V R3R2 x RS
0.16 x VI 4 mA
The current presently provides 4-mA to 20-mA output for an input voltage of 0 to 100 mV. By modifying R1, R2,and R3, the input voltage range or the output current range can be adjusted.
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSETDUAL OPERATIONAL AMPLIFIERS
SLOS033D – JULY 1988 – REVISED AUGUST 1994
2–26 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
APPLICATION INFORMATION
2-wire 4-mA to 20-mA current loop (continued)
Including the offset voltage of the operational amplifier in the following equation clearly illustrates why the lowoffset TL032A was chosen:
IO VI R3R1 x RS
5 V R3R2 x RS
– VIO R3R1 x RS
R3R2 x RS
R1RS
0.16 x VI 4 mA –0.17 x VIO
For example, an offset voltage of 1 mV decreases the output current by 0.17 mA.
Because of the low-power consumption of the TL032A, this circuit has at least 2 mA available to drive the actualsensor from the 5-V reference node.
10 µF
lO
TL032A–
+
IN
OUT
GND
LT1019-5
VCC+ = 10 V
LTC1044
R52N3904
1N4148
RS
100 Ω
RL 50 Ω
R45 kΩ
R380 kΩ
R1
5 kΩ
1 MΩR2 10 µF
2
34
8
5
3.3 kΩ
5 V Ref
VI
SignalCommon
Figure 52. 2-Wire 4-mA to 20-mA Current Loop
TL032, TL032AENHANCED-JFET LOW-POWER LOW-OFFSET
DUAL OPERATIONAL AMPLIFIERSSLOS033D – JULY 1988 – REVISED AUGUST 1994
2–27POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
APPLICATION INFORMATION
low-level light detector preamplifier
Applications that need to detect small currents require high input-impedance operational amplifiers; otherwise,the bias currents of the operational amplifier camouflage the current being monitored. Phototransistors providea current that is proportional to the light reaching the transistor. The TL032 allows even the small currentsresulting from low-level light to be detected.
In Figure 53, if there is no light, the phototransistor is off and the output is high. As light is detected, theoperational amplifier output begins pulling low. Adjusting R4 both compensates for offset voltage of the amplifierand adjusts the point of light detection by the amplifier.
TL032
–
+
R6
10 kΩ
C1100 pF
R7
R3R1
TIL601
R2 5 kΩ
R5
R4
10 kΩ
10 kΩ
10 kΩ10 kΩ
10 kΩ
15 V
VO
–15 V
Figure 53. Low-Level Light Detector Preamplifier
2–28 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443
IMPORTANT NOTICE
Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductorproduct or service without notice, and advises its customers to obtain the latest version of relevant informationto verify, before placing orders, that the information being relied on is current.
TI warrants performance of its semiconductor products and related software to the specifications applicable atthe time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques areutilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of eachdevice is not necessarily performed, except those mandated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, orsevere property or environmental damage (“Critical Applications”).
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTEDTO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS.
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TIproducts in such applications requires the written approval of an appropriate TI officer. Questions concerningpotential risk applications should be directed to TI through a local SC sales office.
In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards should be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance, customer product design, software performance, orinfringement of patents or services described herein. Nor does TI warrant or represent that any license, eitherexpress or implied, is granted under any patent right, copyright, mask work right, or other intellectual propertyright of TI covering or relating to any combination, machine, or process in which such semiconductor productsor services might be or are used.
Copyright 1996, Texas Instruments Incorporated