TIP147T

8/11/2019 TIP147T

http://slidepdf.com/reader/full/tip147t 1/5

©2000 Fairchild Semiconductor International Rev. A, February 2000

T I P 1 4 5 T / 1 4

6 T / 1 4 7 T

PNP Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Value Units

VCBO Collector-Base Voltage : TIP145T

: TIP146T

: TIP147T

- 60

- 80

- 100

V

V

V

VCEO

Collector-Emitter Voltage : TIP145T

: TIP146T

: TIP147T

- 60

- 80

- 100

V

V

V

VEBO Emitter-Base Voltage - 5 V

IC Collector Current (DC) - 10 A

ICP Collector Current (Pulse) - 15 A

IB Base Current (DC) - 0.5 A

PC Collector Dissipation (TC=25°C) 80 W

TJ Junction Temperature 150 °C

TSTG Storage Temperature - 65 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage

: TIP145T

: TIP146T

: TIP147T

IC = - 30mA, IB = 0

- 60

- 80

- 100

V

V

V

ICEO Collector Cut-off Current

: TIP145T

: TIP146T

: TIP147T

VCE = - 30V, IB = 0

VCE = - 40V, IB = 0

VCE = - 50V, IB = 0

- 2

- 2

- 2

mA

mA

mA

ICBO Collector Cut-off Current

: TIP145T

: TIP146T

: TIP147T

VCB = - 60V, IE = 0

VCB = - 80V, IE = 0

VCB = - 100V, IE = 0

- 1

- 1

- 1

mA

mA

mA

IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 - 2 mA

h

FE DC Current Gain V

CE= - 4V, I

C= - 5A

VCE = - 4V, IC = - 10A

1000

500

VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA

IC = - 10A, IB = - 40mA

- 2

- 3

V

V

VBE(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V

VBE(on) Base-Emitter ON Voltage VCE = - 4V, IC = - 10A - 3 V

tD Delay Time VCC = - 30V, IC = - 5A

IB1 = -20mA, IB2 = 20mA

RL = 6Ω

0.15 µs

tR Rise Time 0.55 µs

tSTG Storage Time 2.5 µs

tF Fall Time 2.5 µs

TIP145T/146T/147T

Monolithic Construction With Built In Base-

Emitter Shunt Resistors• High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.)

• Industrial Use

• Complement to TIP140T/141T/142T

Equivalent Circuit

B

E

C

R1 R2

R1 8k Ω≅ R2 0 .12k Ω≅

1.Base 2.Collector 3.Emitter

1 TO-220

8/11/2019 TIP147T


©2000 Fairchild Semiconductor International

T I P 1 4 5 T / 1 4

6 T / 1 4 7 T

Rev. A, February 2000

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

Figure 5. Safe Operating Area Figure 6. Power Derating

-0 -1 -2 -3 -4 -5-0

-1

-2

-3

-4

-5

-6

-7

-8

-9

-10

IB = -2000µ A

IB = -1800µ A

IB = -1600µ AIB = -1400µ A

IB = -1200µ A

IB = -1000µ A

IB = -800µ A

IB = -600µ A

IB = -400µ A

I C [ A ] , C O L L E C T O R C U R R E N T

VCE[V], COLLECTOR-EMITTER VOLTAGE

-0.1 -1 -10 -100100

1000

10000

100000

VCE = -4V

h F E ,

D C C U R R E N T G A I N

IC[A], COLLECTOR CURRENT

-0.1 -1 -10 -100-0.01

-0.1

-1

-10

IC=-500IB

VCE(sat)

VBE(sat)

V B E

( s a t ) , V

C E

( s a t ) [ V ] , S A T U R A T I O N V O L T A G E

IC[A], COLLECTOR CURRENT

-1 -10 -100 -1000-10

-100

-1000

f=0.1MHz

VCB[V], COLLECTOR-BASE VOLTAGE

C o b

[ p F ] , C A P A C I T A N C E

-1 -10 -100 -1000-0.1

-1

-10

-100

TIP141

TIP142

TIP140

D C

I C [ A ] , C O L L E

C T O R C U R R E N T

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 1750

20

40

60

80

100

120

P C

[ W ] , P O W

E R D I S S I P A T I O N

TC[oC], CASE TEMPERATURE

8/11/2019 TIP147T


4.50 ±0.209.90 ±0.20

1.52 ±0.10

0.80 ±0.102.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2 . 8

0 ± 0 . 1

0

1 5 . 9

0 ± 0 . 2

0

1 0 . 0

8 ± 0 . 3

0

1 8 . 9

5 M A X .

( 1 . 7

0 )

( 3 . 7

0 )

( 3 . 0

0 )

( 1 . 4

6 )

( 1 . 0

0 )

( 4 5 ° )

9 . 2

0 ± 0 . 2

0

1 3 . 0

8 ± 0 . 2

0

1 . 3

0 ± 0 . 1

0

1.30+0.10 –0.05

0.50+0.10 –0.05

2.54TYP

[2.54 ±0.20]

2.54TYP

[2.54 ±0.20]

TO-220

Package Demensions

©2000 Fairchild Semiconductor International Rev. A, February 2000

T I P 1 4 5 T / 1 4

6 T / 1 4 7 T

Dimensions in Millimeters

8/11/2019 TIP147T


©2000 Fairchild Semiconductor International Rev. E

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

Bottomless™CoolFET™

CROSSVOLT™

E2CMOS™

FACT™

FACT Quiet Series™

FAST®

FASTr™

GTO™

HiSeC™

ISOPLANAR™MICROWIRE™

POP™

PowerTrench®

QFET™

QS™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™TinyLogic™

UHC™

VCX™

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

8/11/2019 TIP147T


This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

http://www.datasheetcatalog.com/




TIP147T

Documents

Transcript of TIP147T