ThermalProcess-Oxidationhome.konkuk.ac.kr/~keechan/ThermalProcess-Oxidation.pdf · DescžTbe...
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Transcript of ThermalProcess-Oxidationhome.konkuk.ac.kr/~keechan/ThermalProcess-Oxidation.pdf · DescžTbe...
(660 oC)
RegulatorMFC (mas flow controller)
(Green)
(Grey)
(Red)
(無水) hydrogen chloride HCl
(C2HCl3) (C2H3Cl3)
Burn Box + Scrubber Scrubber
Susceptor
Thermocouple
NiAl
NiCrNiCr
(失透)
Susceptor
etches way contaminant.
Susceptor
of
its
CVD Precursor SiH4, SiH2Cl2, SiHCl3, and SiCl4
(~ 5000Å)
prevents channeling of ions and contamination from sputtered PR(100Å ~ 200Å)
Pad oxide prevents tensile stress on Si from thick nitride.
Barrier oxide prevents contamination from CVD USG.
SC: Standard Cleaning
ed
+ 1 atm.
He‐Ne laser 633nm
Film thickness & refractive index
Various wavelength